• Journal of the Microelectronics and Packaging Society
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• v.7 no.2
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• pp.1-6
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• 2000

X-ray lithography mask with SiC membrane and Ta absorber patterns has been fabricated using ECR plasma CVD, d.c. magnetron sputtering, and ECR plasma etching. The stress of stoichiometric SiC film was adjusted by rapid thermal annealing under $N_2$, ambient. Adjusting the working pressure during sputtering process resulted in a near-zero residual stress, reasonable density, and smooth surface morphology of Ta film. Cl-based plasma showed a good etching characteristics of Ta, and two-step etching process was implemented to suppress microloading effect fur sub-quarter $\mu\textrm{m}$ patterning.

• Korean Journal of Materials Research
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• v.6 no.10
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• pp.1017-1024
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• 1996

본 연구에서는 여러 기판에 대한 Cu의 확산정도를 알기 위하여 Ta, Nb, Co/Ta이중층 및 Co/Nb 이중층 위에 기화법으로 증착하고 열처리를 실시하였다. 열처리한 Ta막은 열처리하지 않은 Ta막보다 Cu 확산방지막으로서의 성능이 더 떨어지는데, 이것은 열처리에 의하여 Ta막이 결정화되기 때문이다. Cu/Co/Ta/(001)Si 구조에서의 구리 실리사이드 생성온도는 Cu/Co/Ta(001)Si 구조에서의 그것보다 더 높다. 한편, nb의 Cu에 대한 barrier 특성은 Ta와 비슷한 수준이다. 또한 Cu막 도포 이전에 Pd+HF활성화 전처리나 N2플라즈마 전처리를 실시하면, Cu의 핵생성뿐만 아니라 기판에 대한 Cu막의 접착성도 향상된다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.1022-1025
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• 2001

This paper presents the characteristics of TaN thin-film as high-temperature strain gauges, which were deposited on Si substrate by DC reactive magnetron sputtering in an argon-nitrogen atmosphere(Ar-(4∼20%)N$_2$). The electrical and mechanical characteristics of these films investigated with the thickness range 1650∼1870${\AA}$ and room temperature resistivities in the range 178.3 ${\mu}$$\Omega$cm to 3175.7 ${\mu}$$\Omega$cm. The TaN thin-film strain gauge deposited in Ar-(20%)N$_2$atmosphere is obtained a temperature coefficient of resistance(TCR), 0∼-1357 ppm/$^{\circ}C$ in the temperature range 25∼275$^{\circ}C$ and a high temporal stability with a longitudinal gauge factor, 2.92∼3.47. Because of their high resistivity, low TCR and linear gauge factor, these cermet thin-film may allow high-temperature strain gauges miniaturization.

• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.1596-1598
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• 2002

This paper presents the characteristics of Ta-N thin-film strain gauges as high-temperature strain gauges, which were deposited on Si substrate by DC reactive magnetron sputtering in an argon-nitrogen atmosphere(Ar-($4{\sim}16%$)$N_2$). These films were annealed for 1 hour in $2{\times}10^{-6}$ Torr vacuum furnace range $500{\sim}1000^{\circ}C$. The optimized conditions of Ta-N thin-film strain gauges were annealing condition($900^{\circ}C$, 1 hr.) in 8% $N_2$ gas flow ratio deposition atmosphere. Under optimum conditions, the Ta-N thin-films for strain gauges is obtained a high resistivity, ${\rho}$=768.93 ${\mu}{\Omega}cm$, a low temperature coefficient of resistance, TCR = -84 ppm/$^{\circ}C$ and a high temporal stability with a good longitudinal gauge factor, GF = 4.12.

• Bulletin of the Korean Chemical Society
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• v.19 no.1
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• pp.110-114
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• 1998

The hydrogen-bonding interactions between thioacetamide (TA) and urea derivatives such as tetramethylurea (TMU) and dimethyldiphenylurea (DMDPU) have been studied using near-infrared absorption spectroscopy. Thermodynamic parameters for the interactions between TA and urea derivatives were determined by analyzing the $v^{as}_{N-H}$+Amide Ⅱ combination band of TA at 1970 nm. The ΔH° values, indicating the intrinsic strength of hydrogen bonding, are - 23.0 kJ/mole and - 19.8 kJ/mol for TMU and DMDPU, respectively. This is well explained by the inductive effects of substituents. Ab initio molecular orbital calculations for the proton affinity of TMU, N,N-dimethylformamide (DMF), and N,N-dimethylacetamide (DMA) in gas phase have been carried out at HF/3-21G ad HF/6-31G(d) levels, showing that the proton affinity of TMU is larger than that of DMA, which agrees well the experimental results.

• Journal of the Korean institute of surface engineering
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• v.29 no.6
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• pp.628-633
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• 1996

Large saturation magnetization $4pM_s$ is essentially required for soft magnetic thin layers used in magnetic recording devices. Amorphous Co-based alloys and Fe-Co alloys may be regarded as one of the candidates for soft magnetic materials which possess large $4\piM_s$. Some preparation process to improve soft magnetism of these films were performed in this study. Addition of Ta seemed to be effective to change the magnetostriction constant $\lambda$ from positive value to negative one. The magnetoelastic energy $K_e$ is strongly dependent on $\lambda$. $(Co_{95.7}Zr_{4.3})_{100-x}Ta_x$ films with $K_e$ of negative value have sufficiently soft magnetic characteristics. $Fe_{90}Co_{10}$ alloy exhibits extremely large $4\piM_s$, of about 24 kG. Addition of N and Ta to $Fe_{90}Co_{10}$ films improved the soft magnetism of them. The $Fe_{82.0}Co_{7.6}Ta_{10.4}$:N/Ti multilayered films exhibit better soft magnetic properties and better thermal stability than Fe-Co-Ta:N singlelayer films.

• Journal of Life Science
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• v.11 no.5
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• pp.439-446
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• 2001

Leuconostoc mesenteroides subsp. cremoris DLAB19 were investgated under various culture conditions to maximize the production of antimutagenic substance(s) against N-methyl-N\`-nitro-N-nitrosoguandine(MNNG) on Salmonella enterica serovar typhimurium TA100 and 4-nitroquinoline-1-oxide(4-NQO) on S. enterica serovar typhimurium TA98. The MRS medium containing glucose (2%) as a carbon source and yeasty extract (1%) as a nitrogen source resulted in the highest production of the antimutagenic substance(s) against both mutagens in the culture supernatant of Leu. mesenteroides subsp. cremoris DLAB19. Optimal pH of the culture medium, culture temperature and shaking speed for the antimutagenic substance(s) production were pH 7.0, 3$0^{\circ}C$ and 150 rpm, respectively. Under the optimal condition, the antimutagenic effects of Leu. mesenteroides subsp. cremoris DLAB19 culture supernatant were 96.4% against MNNG on S.enterica serovar typhimurium TA100 and 53.8% against 4-NQO on S. enterica serovar typhimurium TA98.

• Korean Journal of Food Science and Technology
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• v.32 no.2
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• pp.417-423
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• 2000

Lactobacillus plantarum KLAB21 isolated from Kimchi has been reported to produce antimutagenic subtance(s) in the culture medium. In this study, antimutagenic effects of the strain KLAB21 were investigated to under various culture conditions maximize the production of antimutagenic substance(s) against N-methyl-N'-nitro-N-nitrosoguanidine(MNNG) on Salmonella typhimurium TA100 and 4-nitroquinoline-1-oxide(NQO) on S. typhimurium TA98. Glucose(2%) as a carbon source and yeast extract(1%) as a nitrogen source resulted in the highest production of the antimutagenic substance(s) against both mutagens in the culture supernatant of L. plantarum KLAB21. The most effective concentrations of bactopeptone as a nitrogen source were 1% against MNNG and 1.5% against NQO. Optimal pH of the medium, culture temperature, and shaking speed for the antimutagenic substance(s) production were pH 7.0, $37^{\circ}C$ and 150 rpm, respectively. Under the optimal condition, the antimutagenic effects of L. plantarum KLAB21 culture supernatant were 98.4% against MNNG on S. typhimurium TA100 and 57.3% against NQO on S. typhimurium TA98.

• Journal of the Microelectronics and Packaging Society
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• v.11 no.4 s.33
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• pp.87-91
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• 2004

We have investigated the effects of W-N/Pt bottom electrode on the ferroelectric degradation of $Sr_{0.8}Bi_{2.4}Ta_2O_9(SBT)/Pt$ due to hydrogen annealing at $350^{\circ}C$ in $N_2$ gas atmosphere containing $5{\%}\;H_2$ gas for 1hr. As a result, inserting the W-N thin films between SBT and Pt, this W-N thin film prevents hydrogen molecules to be chemisorbed at the Pt electrode surface of at the electrode/ferroelectric interface during hydrogen annealing. These hydrogen atoms can diffuse into the SBT and react with the oxide causing the oxygen deficiency in the SBT film, which will result in the ferroelectric degradation. Experimental results show that W-N thin film is a good diffusion barrier during the hydrogen annealing.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.54-57
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• 2003

[ $HfO_xN_y$ ] films using a hafnium tertiary-butoxide $(Hf[OC(CH_3)_3]_4)$ in plasma and $N_2$ ambient were prepared to improve the thermal stability of hafnium-based gate dielectrics. A 10% nitrogen incorporation into $HfO_2$ films showed a smooth surface morphology and a crystallization temperature as high as $200^{\circ}C$ compared with pure $HfO_2$ films. The $TaN/HfO_xN_y/Si$ capacitors showed a stable capacitance-voltage characteristics even at post-metal annealing temperature of $1000^{\circ}C$ in $N_2$ ambient and a constant value of 1.6 nm EOT (equivalent oxide thickness) irrespective of an increase of PDA and PMA temperature. Leakage current densities of $HfO_xN_y$ capacitors annealed at PDA temperature of 800 and $900^{\circ}C$, respectively were approximately one order of magnitude lower than that of $HfO_2$ capacitors.