• 제목/요약/키워드: Ta-substitution

검색결과 47건 처리시간 0.028초

치암중초약의 돌연변이유발 및 돌연변이유발 억제효과 (Mutagenicity of Chinese Herbal Anti-cancer Drugs and Their Antimutagenic Activity to Base-pair Substitution Mutagen)

  • 이현철
    • 대한미생물학회지
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    • 제22권2호
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    • pp.185-193
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    • 1987
  • Ten species of herbae, which have been used to treat cancers in Chinese medicine, were tested to investigate their mutagenicity or antimutagenicity in S. typhimurium TA97, TA98, TA100, TA1535, and TA1538. Scolopendra centipede was weakly active in reversion of the frameshift mutation in S. typhimurium TA97 strain and the base-pair substitution in TA100 and TA1535 strains. Other herbae such as Coix lachryma, Dianthus superbus, Tricanthoshse kirilowii, Eupatorium formosanum, Lithospermum erythrorhizon, Ansaema japonicum, Curcuma zedoaria, Helicteres angustifolia, and Euonymus sieboldianus did not show any of the mutagenic potential, regardless of the metabolic activation with rat hepatic microsomal fraction. Dianthus superbus, Eupatorium formosanum, and Euonymus sieboldianus exhibited suppressive activities on microbial mutagenesis of N-methyl-N'-nitrosoguanidine, a base-pair substitution mutagen, in TA1535 and TA100 tester strains. The antimutagenic activities of Dianthus superbus and Euonymus sieboldianus appeared to be dose-dependant.

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$(Ru_{1-x}Ta_x)Sr_2(Gd_{1.4}Ce_{0.6})Cu_2O_z$ 계의 초전도 및 자기적 특성 (Superconducting and Magnetic Properties of the $(Ru_{1-x}Ta_x)Sr_2(Gd_{1.4}Ce_{0.6})Cu_2O_z$ System)

  • 이호근
    • Progress in Superconductivity
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    • 제13권3호
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    • pp.163-168
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    • 2012
  • The effects of Ta substitution on the superconducting and magnetic properties of the $(Ru_{1-x}Ta_x)Sr_2(Gd_{1.4}Ce_{0.6})Cu_2O_z(0{\leq}x{\leq}0.5)$ system have been investigated. The X-ray diffraction measurements indicate that the Ta ion replaces Ru sites up to x = 0.4. It is found that the Ta substitution for Ru significantly reduces the weak-ferromagnetic component of the field-cooled magnetic susceptibility without an appreciable change of room temperature thermopower at lower Ta doping level below x = 0.2. The resistive transition temperature tends to decrease monotonically from 27 K for the x = 0 sample to 16 K (9 K) for the x = 0.4 (x = 0.5) sample. These results suggest that superconductivity of the $(Ru_{1-x}Ta_x)Sr_2(Gd_{1.4}Ce_{0.6})Cu_2O_z$ compound is not significantly affected by the magnetic state of the Ru sublattice. The experimental results are discussed in connection with previous reports on the effects of Nb substitution.

Effect of Ta-Substitution on the Ferroelectric and Piezoelectric Properties of Bi0.5/(Na0.82K0.18)0.5TiO3 Ceramics

  • Do, Nam-Binh;Lee, Han-Bok;Yoon, Chang-Ho;Kang, Jin-Kyu;Lee, Jae-Shin;Kim, Ill-Won
    • Transactions on Electrical and Electronic Materials
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    • 제12권2호
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    • pp.64-67
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    • 2011
  • The effect of Ta substitution on the crystal structure, ferroelectric, and piezoelectric properties of $Bi_{0.5}(Na_{0.82}K_{0.18})_{0.5}Ti_{1-x}Ta_xO_3$ ceramics has been investigated. The Ta doping resulted in a transition from coexistence of ferroelectric tetragonal and rhombohedral phases to an electrostrictive pseudocubic phase, leading to degradations of the remnant polarization, coercive field, and piezoelectric coefficient $d_{33}$. However, the electricfield-induced strain was significantly enhanced by the Ta substitution-induced phase transition and reached a highest value of $S_{max}/E_{max}$ = 566 pm/V under an applied electric field 6 kV/mm when 2% Ta was substituted on Ti sites. The abnormal enhancement in strain was attributed to the pseudocubic phase with high electrostrictive constants.

기계적합금법에 의한 $\textrm{TiB}_2$ 분말의 제조 및 Zr과 Ta이 합성에 미치는 영향 (Synthesis of $\textrm{TiB}_2$ Powder by Mechanical Alloying and the Effect of Zr and Ta Substitution for Ti)

  • 황연;강을손
    • 한국재료학회지
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    • 제9권8호
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    • pp.787-791
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    • 1999
  • 기계적합금법으로 Ti와 B의 혼합분말로부터 $TiB_2$분말을 제조하였고, Zr과 Ta의 Ti 치환 효과를 조사하였다. (Ti+B)의 혼합분말을 280시간 분쇄하여 $TiB_2$단일상을 얻었고 기계적합금화 도중 비정질상은 관찰되지 않았다. Ti의 일부를 원자반경이 Ti보다 큰 Zr으로 치환한 결과 기계적합금화에 걸리는 시간이 크게 감소한 반면에, 붕화물 생성열이 절대값이 $TiB_2$상보다 작은 Ta로 치환하면 280시간 분쇄하여도 단일상을 형성하지 못하였다.

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Ta 치환에 따른 비납계 (Na0.53K0.47)(Nb1-xTax)O3 세라믹의 압전 및 유전 특성 (Effects of Ta Substitution on Dielectric and Piezoelectric Properties of Pb-free (Na0.53K0.47)(Nb1-xTax)O3 Ceramics)

  • 이정훈;류경현;성연수;조종호;송태권;김명호
    • 한국세라믹학회지
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    • 제48권5호
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    • pp.467-470
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    • 2011
  • Pb(Zr,Ti)$O_3$ (PZT) based ceramics with superior piezoelectric properties have been extensively used in various domestic and industrial appliances. However, PZT ceramics causing environmental contamination and health problems need to be eventually replaced by any of Pb-free materials. $(Na_{0.53}K_{0.47})(Nb_{1-x}Ta_x)O_3$ (NKNT), one of Pb-free piezoelectric ceramics, has long been known but its properties are not fully understood and developed. In this study, dielectric and piezoelectric properties of Pb-free NKNT ceramics were studied with Ta substitution for B-site at x = 0~0.6. It was found that polymorphic phase transition (PPT) between orthorhombic and tetragonal phases was notably influenced by Ta substitution. The highest piezoelectric coefficient ($d_{33}$) of 284 pC/N was occurred at x = 0.45.

이온 분극률과 결정구조에 따른 Aluminum Magnesium Tantalate 고용체의 마이크로파 유전특성 (Microwave Dielectric Characteristics of Aluminum Magnesium Tantalate Solid Solutions with Variations of Ionic Polarizability and Crystal Structure)

  • 최지원;하종윤;강종윤;윤석진;윤기현;김현재
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 하계학술대회 논문집
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    • pp.119-122
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    • 2002
  • The calculated and measured dielectric constant of (1-x)(Al$\sub$1/2/Ta$\sub$1/2/)O$_2$-x(Mg$\sub$1/3/Ta$\sub$2/3/)O$_2$(O$\leq$x$\leq$1.0) solid solutions were investigated by variations of ionic polarizability and crystal structure. (Al$\sub$1/2/Ta$\sub$1/2/)O$_2$ and (Mg$\sub$1/3/Ta$\sub$2/3/)O$_2$were orthorhombic and tetragonal trirutile structure, respectively. When (Al$\sub$1/2/Ta$\sub$1/2/)O$_2$ was substituted by (Mg$\sub$1/3/Ta$\sub$2/3/)O$_2$, the phase transformed to tetragonal structure over 60 mole%. Because the ionic radius of (Mg$\sub$1/3/Ta$\sub$2/3/)O$_2$was slightly bigger than one of (A1$\sub$1/2/Ta$\sub$1/2)O$_2$, the cell parameters increased with an increase of (Mg$\sub$1/3/Ta$\sub$2/3/)O$_2$ substitution. The measured dielectric constant increased with an increase of (Mg$\sub$1/3/Ta$\sub$2/3/)O$_2$ substitution and coincided with dielectric mixing rule and the calculated dielectric constant with the molecular additivity rule. There were some differences between the measured and the calculated dielectric constant. The reason of the lowered dielectric constant comparing with the calculated one was compressed stress due to the electronic structure of tantalum.

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Ta 치환이 (Li0.04(Na0.54K0.46)0.96(Nb0.96-xTaxSb0.04)O3 세라믹스의 유전 및 압전 특성에 미치는 영향 (Effect of Ta Substitution on the Dielectric and Piezoelectric Properties of (Li0.04(Na0.54K0.46)0.96(Nb0.96-xTaxSb0.04)O3Ceramics)

  • 노정래;류주현
    • 한국전기전자재료학회논문지
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    • 제24권8호
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    • pp.627-631
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    • 2011
  • [ $[Li_{0.04}(Na_{0.54}K_{0.46})_{0.96}](Nb_{1-0.04-X}TaxSb_{0.04})O_3$ ]lead-free piezoelectric ceramics have been prepared by normal sintering at $1,100^{\circ}C$ for 5 h. X-ray diffraction analysis indicated that specimens demonstrate orthorhombic symmetry when $Ta\leq5$ mol%. While transforming into tetragonal symmetry when $x\geq20$ mol%. These suggest that the orthorhombic and tetragonal phases co-exist in the ceramics with 5 mol% $cm^3$. As the result of SEM images, the grain growth was decreased with the increase of Ta substitution. The ceramics become 'softening', leading to improvements in $k_p$, $\varepsilon_r$ and $d_{33}$, but a decrease in $Q_m$. Excellent properties of $k_p$= 0.46, $d_{33}$= 293 pC/N, ${\varepsilon}_r$= 1,583 and Tc= $340^{\circ}C$ were obtained when Ta= 15 mol%.

$Bi_4$$Ti_3$$O_{12}$ 박막에서 Bi-O 결합과 전기 물성에 대한 Ta 치환의 영향 (The Effect of Ta-substitution on the Bi-O Bonding and the Electrical Properties of $Bi_4$$Ti_3$$O_{12}$ Thin Films)

  • 고태경;한규석;윤영섭
    • 한국세라믹학회지
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    • 제38권6호
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    • pp.558-567
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    • 2001
  • 본 연구에서는 알콕사이드를 전구물질로 하는 졸겔공정을 이용하여 Bi 과잉 12 mol%의 조성인 B $i_4$ $Ti_3$ $O_{12}$ 박막과 B $i_4$ $Ti_{3-x}$T $a_{x}$ $O_{12}$(x=0.1, 0.2, 0.3) 박막을 제조하였다. XPS 분석에 따르면 Ta 치환 x=0.2에서 Bi 4f의 photoemission 곡선이 낮은 결합에너지로 이동하였고 피크 강도가 감소하는 현상이 관측되었다. 이는 x=0.1과 0.2 사이에서 Bi-O 결합이 길어져 인장상태 하에 있었음을 나타내었다. B $i_4$ $Ti_3$ $O_{12}$(BIT) 박막의 유전상수와 유전손실은 100 kHz에서 340, 0.05이었고, B $i_4$ $Ti_{3-x}$T $a_{x}$ $O_{12}$ 박막에서 이들 값은 x=0.1에서 가장 높았으며, 각각 480, 0.13이었다. B $i_4$ $Ti_3$ $O_{12}$ 박막의 잔류분극과 항전계는 1.24$\mu$C/$ extrm{cm}^2$, 31.4 kV/cm 이었으나, Ta 치환 x=0.2에서 이들 값은 각각 19.7$\mu$C/$\textrm{cm}^2$, 49.5 kV/cm 에 이르렀다. 또한, B $i_4$ $Ti_3$ $O_{12}$ 박막의 누설전류 밀도는 ~$10^{-6}$ A/$\textrm{cm}^2$ 정도이었으며, Ta 치환은 누설전류를 감소시켜 Ta 치환 x=0.2 이상에서 BIT 박막에 비해 한 차수 정도 낮아졌다. Ta 치환에 따른 B $i_4$ $Ti_3$ $O_{12}$ 전기 물성에서 변화는 Bi-O 결합에서 관측된 인장상태로의 전이와 연관성이 있었으며, 덧붙여 치환에서 생성된 전자에 의한 정공보상이 이에 영향을 끼쳤다. 정공보상이 이에 영향을 끼쳤다.끼쳤다.

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