• Journal of the Microelectronics and Packaging Society
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• v.16 no.3
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• pp.19-24
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• 2009

Formation of an adhesion/barrier layer and a seed layer by sputtering techniques followed by electroplating has been one of the most widely used methods for the filling of through-Si via (TSV) with high aspect ratio for 3-D packaging. In this research, the adhesion and diffusion-barrier properties of the $TaN_x$ film deposited by reactive sputtering were investigated. The adhesion strength between Cu film and $SiO_2$/Si substrate was quantitatively measured by $180^{\circ}$ peel test and topple test as a function of the composition of the adhesive $TaN_x$ film. As the nitrogen content increased in the adhesive $TaN_x$ film, the adhesion strength between Cu and $SiO_2$/Si substrate increased, which was attributed to the increased formation of interfacial compound layer with the nitrogen flow rate. We also examined the diffusion-barrier properties of the $TaN_x$ films against Cu diffusion and found that it was improved with increasing nitrogen content in the $TaN_x$ film up to N/Ta ratio of 1.4.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.1014-1017
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• 2001

In recent years, The tantalum nitride(TaN) thin-film has been developed for the electronic resistor and capacitor. In this papers, The effect of thermal annealing in the temperature range of 300∼700$^{\circ}C$ on the sheet resistor properties and microistructure of tantalum nitride(TaN) thin-film deposited by RF sputtering was studied. XRD(X-ray diffractometer) and AFM were used to observe electrical properties and microstructrue of the TaN film and sheet resistance. The TCR properties of the TaN films were discussed in terms of annealing temperature, ratio of nitrogen, crystallization and thin films surface morphology due to annealing temperature. The leakage current of the TaN thin film annealed 400 $^{\circ}C$ was stabilized in the study. How its was found that the sheet resistance in the polycrystalline TaN thin film decreased with increasing the annealing temperature above 600 $^{\circ}C$ after sudden peak upen 400 $^{\circ}C$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.1
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• pp.1-5
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• 2013

In this paper, we investigated the etching characteristics of the TaN thin films and the surface reaction of TaN thin films after etching process. The etching characteristics of the TaN thin films were carried out using inductively coupled plasma (ICP). The etch rate and the selectivity of TaN to $SiO_2$ and TaN to PR were measured by varying the gas mixing ratio, RF power, DC-bias voltage, and process pressure in CF-based plasma. The surface reaction of TaN thin films were determined by x-ray photoelectron spectroscopy (XPS).

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2002.11a
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• pp.14-19
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• 2002

In this study, as Cu diffusion barrier, tantalum nitrides were successfully deposited on Si(100) substrate and SiO2 by plasma assisted atomic layer deposition(PAALD) and thermal ALD, using pentakis (ethylmethlyamino) tantalum (PEMAT) and $NH_3$ as precursors. The TaN films were deposited on $250^{\circ}$C by both method. The growth rates of TaN films were $0.8{\AA}$/cycle for PAALD and $0.75{\AA}$/cycle for thermal ALD. TaN films by PAALD showed good surface morphology and excellent step coverage for the trench with an aspect ratio of h/w - $1.8 : 0.12 \mu\textrm{m}$ but TaN films by thermal ALD showed bad step coverage for the same trench. The density for PAALD TaN was $11g/\textrm{cm}^3$ and one for thermal ALD TaN was $8.3g/\textrm{cm}^3$. TaN films had 3 atomic % carbon impurity and 4 atomic % oxygen impurity for PAALD and 12 atomic % carbon impurity and 9 atomic % oxygen impurity for thermal ALD. The barrier failure for Cu(200nm)/TaN(l0nm)/$SiO_2(85nm)$/Si structure was shown at temperature above $700^{\circ}$C by XRD, Cu etch pit analysis.

• Journal of the Korean Chemical Society
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• v.30 no.6
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• pp.510-515
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• 1986

Spectra for the $v_3$+ Amide II combination band of thioacetamide(TA) were obtained in carbon tetrachloride solutions and in very dilute solutions of TA-N,N-dimethlylacetamide (DMA) in carbon tetrachloride in the range of 5~55$^{\circ}$C. The combination band in the three component system can be resolved into components due to monomeric TA, 1 : 1 TA-DMA complex and 1 : 2 TA-DMA complex. In the dilute solutions the experimental spectrum was resolved by using the computer into its two Lorentzian-Gaussian product components which have been identified with the monomeric TA and the 1 : 1 complex. The equilibrium constants and thermodynamic parameters of 1 : 1 complex were determined by analysis of concentration and temperature dependent spectra. The ${\Delta}H^{\circ}$ and ${\Delta}S^{\circ}$ for the 1 : 1 complex were -14.4 KJ mol$^{-1}$ and -15.6 J mol$^{-1}deg^{-1}$, respectively.

• Journal of Surface Science and Engineering
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• v.27 no.5
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• pp.253-260
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• 1994

Ta-N films were reactively sputter deposited by dc magnetron sputtering from a Ta target with a various Ar-N, gas ratio. Electrical resistivity of pure Ta film was 150$\mu$$\Omega$cm and decreased initially with nitrogen addition, and then increased to a value of 220$\mu$$\Omega$-cm~260$\mu$$\Omega$-cm at 9%~23% nitrogen partial flow. Rutherford backscattering spectrometry(RBS) and Auger electron spectroscopy (AES) analysis show that nitrogen content in the film is increased with the nitrogen partial flow. The film contains 58at.% nitrogen at 36% nitrogen partial flow. Both the phase and the microstructure of the as-deposisted films were investigated by x-ray diffractometry(XRD) adn transmission electron microscopy (TEM) at various nitrogen content. The phase of pure Ta film is identified as $\beta$-Ta with a 200$\AA$~300$\AA$ grain size. The phase of Ta film is changed to bcc-Ta as small amount of nitrogen is added. Crystalline Ta2N film was deposited at 24at.% nitrogen content. Amorphous phase is formed over a range of nitrogen content from about 33at.% to 35at.% while crystalline fcc-TaN is observed to form at 39at.%~48at.% nitrogen content.

• Journal of the Korean Ceramic Society
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• v.41 no.6
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• pp.435-438
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• 2004

MOCVD is one of the major deposition techniques for Cu thin films and Ta-Si-N is one of promising barrier metal candidates for Cu with high thermal stability. Effects of hydrogen plasma pretreatment of the underlying Ta-Si-N film surface on the Cu nucleation in Cu MOCVD were investigated using scanning electron microscopy, X-ray photoelectron spectroscopy and Auger electron emission spectrometry analyses. Cu nucleation in MOCVD is enhanced as the rf-power and the plasma exposure time are increased in the hydrogen plasma pretreatment. The optimal plasma treatment process condition is the rf-power of 40 Wand the plasma exposure time of 2 min. The hydrogen gas flow rate in the hydrogen plasma pretreatment process does not affect Cu nucleation much. The mechanism through which Cu nucleation is enhanced by the hydrogen plasma pretreatment of the Ta-Si-N film surface is that the nitrogen and oxygen atoms at the Ta-Si-N film surface are effectively removed by the plasma treatment. Consequently the chemical composition was changed from Ta-Si-N(O) into Ta-Si at the Ta-Si-N film surface, which is favorable for Cu nucleation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05c
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• pp.197-200
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• 2001

반응성 스퍼터링법으로 TaN film을 증착한 후 열처리온도에 따라 TaN 박막의 $R_s$(sheet resistance) 특성을 평가하고 미세구조 변화에 따른 전기적 특성 변화를 고찰하였다. TaN 박막을 열처리한 결과 $400^{\circ}C$에서 $600^{\circ}C$까지는 (110)의 회절피크만 보이다가 $700^{\circ}C$ 에서는 (200)의 회절 피크가 나타났고 특히 as-deposition 상태와 $300^{\circ}C$ 열처리시에는 Ta와 TaN 상이 혼재한 상태로 나타났으며 전기저항 변화는 as-deposition 상태가 $140{\Omega}/{\square}$로 가장 높았으며 열처리 온도가 증가함에 따라 저항은 점차적으로 감소하다가 $600^{\circ}C$와 $700^{\circ}C$에서는 전기저항이 다시 증가하였다. $500^{\circ}C$까지는 표면 형상이나 표면조도보다는 열처리 온도의 증가에 따른 TaN 박막의 결정구조 변화가 전기저항에 영향을 주는 주 요인으로 작용하고, $600^{\circ}C$와 $700^{\circ}C$ 열처리시에 결정립의 증가에도 불구하고 전기저항이 증가하는 것은 고온 열처리에 의한 표면조도가 증가하였기 때문이라고 생각된다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05b
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• pp.82-85
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• 2002

In recent years, the tantalum nitride(TaN) thin-film has been developed for the electronic resistor and capacitor. In this papers, this study presents the surface profile and sheet-resistance property relationship of reactive-sputtered TaN thin film resistor processed by buffer of Ti and Cr on alumina substrate. The TCR properties of the TaN films were discussed in terms of reactive gas ratio, ratio of nitrogen, crystallization and thin films surface morphology due to annealing temperature. It is clear that the TaN thin-films resistor electrical properties are low TCR related with it's buffer layer condition. Ti buffer layer thin film resistor having a good thermal stability and lower TCR properties then Cr buffer expected for the application to the dielectric material of passive component.

• Journal of Surface Science and Engineering
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• v.29 no.5
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• pp.393-398
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• 1996

Soft magnetic properties and microstructural evolution of FeTaNC films were investigated, and compared with FeTaN and FeTaC films. Effects of substrate species (glass vs. $CaTiO_3$) on the magnetic properties were also investigated. Co-addition of N and C significantly enhance the grain refinments and magnetism, compared with N or C addition only. Good soft magnetic characteristics of coercivity of 0.17 Oe, permeability of 4000 (5MHz), and saturation flux density of 17 kG can be obtained in the FeTaNC in the relatively wide process windows. While these values appears to be similar to those of FeTaN on glass substrate, most distinctive difference between FeTaNC and FeTaN(or C) is in the effects of substrate. Whereas FeTaNC films show good magnetic characteristics for both glass and $CaTiO_3$ substrates, FeTaN(or C) films show significant degradation on the $CaTiO_3$ substrate.