• Title/Summary/Keyword: Ta-C

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Application of ta-C Coating on WC Mold to Molded Glass Lens

  • Lee, Woo-Young;Choi, Ju-hyun
    • Tribology and Lubricants
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    • v.35 no.2
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    • pp.106-113
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    • 2019
  • We investigated the application of tetrahedral amorphous carbon (ta-C) coatings to fabricate a glass lens manufactured using a glass molding process (GMP). In this work, ta-C coatings with different thickness (50, 100, 150 and 200 nm) were deposited on a tungsten carbide (WC-Co) mold using the X-bend filter of a filtered cathode vacuum arc. The effects of thickness on mechanical and tribological properties of the coating were studied. These ta-C coatings were characterized by atomic force microscopy, scanning electron microscopy, nano-indentation measurements, Raman spectrometry, Rockwell-C tests, scratch tests and ball on disc tribometer tests. The nano-indentation measurements showed that hardness increased with an increase in coating thickness. In addition, the G-peak position in the Raman spectra analysis was right shifted from 1520 to $1586cm^{-1}$, indicating that the $sp^3$ content increased with increasing thickness of ta-C coatings. The scratch test showed that, compared to other coatings, the 100-nm-thick ta-C coating displayed excellent adhesion strength without delamination. The friction test was carried out in a nitrogen environment using a ball-on-disk tribometer. The 100-nm-thick ta-C coating showed a low friction coefficient of 0.078. When this coating was applied to a GMP, the life time, i.e., shot counts, dramatically increased up to 2,500 counts, in comparison with Ir-Re coating.

The magnetic characteristics of Co-Cr-(Ta) films (Co-Cr-(Ta)박막의 자기특성)

  • Kim, K-H;Jang, K-U;Kim, J-H;S Nakagawa;M Naoe
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1996.11a
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    • pp.242-244
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    • 1996
  • The effects of $Co_{67}$C $r_{33}$ underlayer on the crystallographec and magnetic characteristics of the Co-Cr-Ta layer deposited on the underlayer was investigated. The diffraction intensity $I_{p(002)}$ of Co-Cr-Ta layers on the $Co_{67}$C $r_{33}$ layer was stronger than that of single layer and Co-Cr-Ta/Ti double layer. Therefore, the crystallinity of Co-Cr-Ta layer was improved by the $Co_{67}$C $r_{33}$ underlayers rather than Ti ones. However, the coercivity $H_{c}$ of Co-Cr-Ta layers deposited on $Co_{67}$C $r_{33}$ underlayer was as low as 250 Oe even at substrate temperature of 22$0^{\circ}C$. This $H_{c}$ decrease seems to be attributed to the effect of the $Co_{67}$C $r_{33}$ underlayer as well as interval time between deposition of the underlayer and the Co-Cr-Ta layer.yer.layer.yer.

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Enhanced Wear Resistance of Cutting Tools Using Multilayer ta-C Coating (다층막 ta-C 코팅 적용을 통한 절삭공구의 내마모성 향상)

  • Kim, Do Hyun;Kang, Yong-Jin;Jang, Young-Jun;Kim, Jongkuk
    • Journal of the Korean institute of surface engineering
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    • v.53 no.6
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    • pp.360-368
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    • 2020
  • Wear resistance of cutting tools is one of the most important requirements in terms of the durability of cutting tool itself as well as the machining accuracy of the workpiece. Generally, tungsten carbide ball end mills have been processed with hard coatings for high durability and wear resistance such as diamond coating and tetrahedral amorphous carbon(ta-C) coating. In this study, we developed multilayer ta-C coatings whose wear resistance is comparable to that of diamond coating. First, we prepared single layer ta-C coatings according to the substrate bias voltage and Ar gas flow, and the surface microstructure, raman characteristics, hardness and wear characteristics were evaluated. Then, considering the hardness and wear resistance of the single layer ta-C, we fabricated multilayer coatings consisting of hard and soft layers. As a result, it was confirmed that the wear resistance of the multilayer ta-C coating with hardness of 51 GPa, and elastic recovery rate of 85% improved to 97% compared to that of the diamond coated ball end mill.

SOFT MAGNETIC PROPERTIES OF FeTaNC NANOCRYSTALLINE FILMS

  • Koh, Tae-Hyuk;Shin, Dong-Hoon;Choi, Woon;Ahn, Dong-Hoon;Nam, Seoung-Eui;Kim, Hyoung-June
    • Journal of the Korean institute of surface engineering
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    • v.29 no.5
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    • pp.393-398
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    • 1996
  • Soft magnetic properties and microstructural evolution of FeTaNC films were investigated, and compared with FeTaN and FeTaC films. Effects of substrate species (glass vs. $CaTiO_3$) on the magnetic properties were also investigated. Co-addition of N and C significantly enhance the grain refinments and magnetism, compared with N or C addition only. Good soft magnetic characteristics of coercivity of 0.17 Oe, permeability of 4000 (5MHz), and saturation flux density of 17 kG can be obtained in the FeTaNC in the relatively wide process windows. While these values appears to be similar to those of FeTaN on glass substrate, most distinctive difference between FeTaNC and FeTaN(or C) is in the effects of substrate. Whereas FeTaNC films show good magnetic characteristics for both glass and $CaTiO_3$ substrates, FeTaN(or C) films show significant degradation on the $CaTiO_3$ substrate.

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The Effect of Bi Content on the C-axis Oriented Growth of $SrBi_2$$Ta_2$$O_9$ Thin Films Fabricateed by R.F. Magnetron Sputtering (R.F. 마그네트론 스퍼터링에 의한 제조된 $SrBi_2$$Ta_2$$O_9$ 박막의 C축 배향성장에 미치는 Bi양의 영향)

  • 배철휘;이전국;이시형;정형진
    • Journal of the Korean Ceramic Society
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    • v.35 no.10
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    • pp.1107-1112
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    • 1998
  • We could obtan c-axis oriented $SrBi_2$$Ta_2$$O_9$ thin films on usual Pt(111)/Ti/$SiO_2$/Si(100) substrate using a r. f. magnetron sputtering technique. According to the increase of sputtering pressure from 250 to 300 mTorr the Bi content and degree of the c-a xis preferred orientation of $SrBi_2$$Ta_2$$O_9$ thin films were increased. By controlling Bi(or $Bi_2O_3$) loss from $SrBi_2$$Ta_2$$O_9$ thin films during post annealing and by inserting $Bi_2O_3$ layer in $SrBi_2$$Ta_2$$O_9$ thin films the effect of Bi content on the c-axis oriented growth of $SrBi_2$$Ta_2$$O_9$ thin films could be investigated without the effect of sputtering pressure. The degree of the c-axis preferred orientation of $SrBi_2$$Ta_2$$O_9$ thin films was increased with increasing with increasing Bi content by control of Bi(or $Bi_2O_3$) loss of $SrBi_2$$Ta_2$$O_9$ thin films. But the c-axis oriented growth of $SrBi_2$$Ta_2$$O_9$ thin films disappeared by the inserting of $Bi_2O_3$ lay-er in $SrBi_2$$Ta_2$$O_9$ thin films.

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Synthesis of Ultrafine TaC Powders Using Tantalum Oxalate Solution (수산 탄탈륨 용액을 이용한 초미립 TaC 분말의 합성)

  • Kwon, Dae-Hwan;Hong, Seong-Hyeon;Kim, Byoung-Kee
    • Korean Journal of Materials Research
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    • v.13 no.12
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    • pp.806-811
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    • 2003
  • Ultrafine TaC powders were synthesised by spray drying using tantalum oxalate solution. The spray dried powders were spherical shape and less than 30 $\mu\textrm{m}$ in size. The powders calcined at 500 and X$700^{\circ}C$ showed amorphous structures and $Ta_2$$O_{5}$ phase was obtained by calcining at $700^{\circ}C$. The particle size and shape remains constant after calcination. The calcined spherical powders were composed of an agglomerate of primary particles under 50 nm in size. The complete formation of TaC could be achieved by heat treatment at $1050^{\circ}C$ for 6 hrs. The observed size of TaC powders by TEM was less than 200 nm.

X-ray Scattering Study of Reactive Sputtered Ta-N/Ta/Si(001)Film as a Barrier Metal for Cu Interconnection (구리배선용 베리어메탈로 쓰이는 Ta-N/Ta/Si(001)박막에 관한 X-선 산란연구)

  • Kim, Sang-Soo;Kang, Hyon-Chol;Noh, Do-Young
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.05b
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    • pp.79-83
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    • 2001
  • In order to compare the barrier properties of Ta-N/Si(001) with those of Ta-N/Ta/Si(001), we studied structural properties of films grown by RF magnetron sputtering with various $Ar/N_2$ ratios. To evaluate the barrier properties, the samples were annealed in a vacuum chamber. Ex-situ x-ray scattering measurements were done using an in-house x-ray system. With increasing nitrogen ratio in Ta-N/Si(001), the barrier property of Ta-N/Si(001) was enhanced, finally failed at $750^{\circ}C$ due to the crystallization and silicide formation. Compared with Ta-N/Si(001), Ta-N/Ta/Si(001) forms silicides at $650^{\circ}C$. However it does not crystallize even at $750^{\circ}C$. With increasing nitrogen composition in Ta-N/Ta/Si(001), the formation of tantalum silicide was reduced and the surface roughness was improved. To observe the surface morphology of Ta-N/Ta/Si(001) during annealing, we performed an in-situ x-ray scattering experiment using synchrotron radiation of the 5C2 at Pohang Light Source(PLS). Addition of Ta layer between Ta-N and Si(001) improved the surface morphology and reduced the surface degradation at high temperatures. In addition, increasing $N_2/Ar$ flow ratio reduced the formation of tantalum silicide and enhanced the barrier properties.

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The Magnetic Properties and Microstrostrures for FeMX(M=Mo, Ta, X=N, C) Films. (FeMX(M=Mo, Ta, X=N, C) 박막의 자기 특성 및 미세구조 변화)

  • Shin, D.H.;Choi, W.;Kim, H.J.;Nam, S.Y.;Ahn, D.H.
    • Journal of the Korean Magnetics Society
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    • v.5 no.5
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    • pp.874-879
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    • 1995
  • Magnetic properties of FeMoN, FeMoTaN, FeTaN and FeTaC films deposited by DC magnetron reactive sputter were investigated, and correlated with their microstructure. FeMoN films were not showen the soft magnetic prop¬erties, because of generated $Fe_{2}Mo$, $Fe_{3-2}N$ and $Fe_{4}N$ phases. Ta added films, however, effectivly retarded the $\alpha$-Fe grain growth and suppressed the generation of Fe nitrides or carbides during heat treatement. The soft magnetic properties of $B_{s}:15\;kG,\;H_{e}:0.25\;Oe,\;\mu':4000(at\;5\;MHz),\;and\;B_s:14.5\;kG,\;He:0.25\;Oe,\;\mu':2700(5MHz)$ were observed in $Fe_{78.8} Ta_{8.5}N_{12.7}\;and\;Fe{75.6}Ta_{8.1}C_{16.3}$ films, respectively.

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Thermal Stability of Ta-Mo Alloy Film on Silicon Dioxide (실리콘 산화막에 대한 Ta-Mo 합금 게이트의 열적 안정성)

  • 노영진;이충근;홍신남
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.17 no.4
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    • pp.361-366
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    • 2004
  • The interface stability of Ta-Mo alloy film on SiO$_2$ was investigated. Ta-Mo alloy films were formed by co-sputtering method, and the alloy composition was varied by controlling Ta and Mo sputtering power, When the atomic composition of Ta was about 91%, the measured work function was 4.24 eV that is suitable for NMOS gate. To identify interface stability between Ta-Mo alloy film and SiO$_2$, C-V and XRD measurements were performed on the samples annealed with rapid thermal processor between $600^{\circ}C$ and 90$0^{\circ}C$. Even after 90$0^{\circ}C$ rapid thermal annealing, excellent interface stability and electrical properties were observed. Also, thermodynamic analysis was studied to compare with experimental results.