• 한국분말재료학회지
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• 제24권5호
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• pp.377-383
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• 2017

Microstructure, electric, and thermal properties of the Ta-Cu composite is evaluated for the application in electric contact materials. This material has the potential to be used in a medium for a high current range of current conditions, replacing Ag-MO, W, and WC containing materials. The optimized SPS process conditions are a temperature of $900^{\circ}C$ for a 5 min holding time under a 30 MPa mechanical pressure. Comparative research is carried out for the calculated and actual values of the thermal and electric properties. The range of actual thermal and electric properties of the Ta-Cu composite are 50~300 W/mk and 10~90 %IACS, respectively, according to the compositional change of the 90 to 10 wt% Ta-Cu system. The results related to the electric contact properties, suggest that less than 50 wt% of Ta compositions are possible in applications of electric contact materials.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 추계학술대회 논문집 전기물성,응용부문
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• pp.18-19
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• 2006

In this study, dielectric properties of the ${Mg_5}{B_4}{O_{15}}$ (B=Ta, Nb) cation-deficient perovskite ceramics and its oscillator application are investigated. The cation-deficient perovskite ceramics are prepared through the solid-state route. According to the XRD pattern, ${Mg_4}{Ta_2}{O_9}$ and $Mg{Ta_2}{O_6}$ phase existed in calcined and sintered ${Mg_5}{Ta_4}{O_15}$ powder. Also ${Mg_5}{Ta_4}{O_{15}}$ phase added with increasing sintering temperature. In the case of calcined and sintered ${Mg_5}{Nb_4}{O_{15}}$ powder, single phase of ${Mg_5}{Nb_4}{O_{15}}$ is appeared. In the case of the ${Mg_5}{Ta_4}{O_{15}}$ and ${Mg_5}{Nb_4}{O_{15}}$ ceramics sintered at $1450^{\circ}C$ for 5h, the dielectric constant, quality factor, and temperature coefficient of the resonant frequency (TCRF) were 8.2, 259,473 GHz, $-10.91ppm/^{\circ}C$ and 14, 37,350 GHz, $-52.3\;ppm/^{\circ}C$, respectively. Simulated DR with ${Mg_5}{Ta_4}{O_{15}}$ ceramics had the operating frequency of 10.99 GHz and S(2,1) of -29.795 dB. Size of manufactured oscillator was $56{\times}48{\times}34\;mm^3 and operated at 11.93 GHz. Power output and second harmonic of oscillator were +13.61 dBm and -23.81 dBc at 23.85 GHz, respectively.

• Journal of Dairy Science and Biotechnology
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• 제34권2호
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• pp.137-144
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• 2016

본 시험은 GMP 내 기본적으로 7%로 결합되어 있는 sialic acid의 함유량을 그대로 보유하도록 제조한 유청단백가수분말(시험물질명: 7%-GNANA)을 기능성 식품 원료 개발함에 최종 연구목표를 두었다. 시험물질은 GMP(7% sialic acid 함유)를 원료로 하고, 여기에 식품첨가물로 허용된 효소인 Alcalase를 사용하여 지표성분인 sialic acid를 100% 효율로 분리시킨 후, 동결 건조한 7%-GNANA(7% sialic acid와 GMP 단백질로 구성, 제품명: HELICOBACTROL-7)을 (주)한일바이오메드사(한국)에서 공여 받아 GLP 가이드라인에 따라 미생물복귀돌연변이시험을 실시하였다. 미생물에 대한 돌연변이 유발성 유무를 검색하기 위해 히스티딘 요구성 균주인 Sal. typhimurium TA98, TA100, TA1535 및 TA1537과 트립토판 요구성 균주인 E. coli WP2uvrA를 이용하였다. 미생물복귀돌연변이시험은 시험물질을 5단계의 농도군(0, 61.7, 185, 556, 1,670, $5,000{\mu}g/plate$)으로 하여 평가하였다. 본 시험을 통한 평가결과, 대사활성계 존재 유무와 관계없이 모든 균주에서 시험물질의 각 농도에 의한 복귀돌연변이 유발원 양성기준인 콜로니 생성수치가 재현성 있는 증가를 나타내지 않았으며, 용량의존성도 확인되지 않았다. 결론적으로, 시험물질인 7% G-NANA의 식품첨가물로서 등록을 위하여 수행한 미생물돌연변이시험에서 안전성이 확인되었다.

• 분석과학
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• 제5권1호
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• pp.111-114
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• 1992

$Ba(Zn_{1/3}Ta_{2/3})O_3$는 고온에서 열처리시 Zn과 Ta 이온이 ordering을 일으키며 이때 격자 비틀림이 일어난다. 본 실험에서는 이러한 격자비틀림을 X-선 분말회절법을 사용하여 1/10,000 이상의 정밀도로 측정하였으며, 그 결과 $Ba(Zn_{1/3}Ta_{2/3})O_3$는 $1350^{\circ}C$ 30분 소결시에도 상당한 정도의 격자 비틀림이 발생하며 이러한 격자비틀림은 소결시간이 길어질수록 증가함을 관찰하였다.

• 한국분말재료학회지
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• 제29권1호
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• pp.34-40
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• 2022

Recently, high-entropy carbides have attracted considerable attention owing to their excellent physical and chemical properties such as high hardness, fracture toughness, and conductivity. However, as an emerging class of novel materials, the synthesis methods, performance, and applications of high-entropy carbides have ample scope for further development. In this study, equiatomic (Hf-Ti-Ta-Zr-Nb)C high-entropy carbide powders have been prepared by an ultrahigh-energy ball-milling (UHEBM) process with different milling times (1, 5, 15, 30, and 60 min). Further, their refinement behavior and high-entropy synthesis potential have been investigated. With an increase in the milling time, the particle size rapidly reduces (under sub-micrometer size) and homogeneous mixing of the prepared powder is observed. The distortions in the crystal lattice, which occur as a result of the refinement process and the multicomponent effect, are found to improve the sintering, thereby notably enhancing the formation of a single-phase solid solution (high-entropy). Herein, we present a procedure for the bulk synthesis of highly pure, dense, and uniform FCC single-phase (Fm3m crystal structure) (Hf-Ti-Ta-Zr-Nb)C high-entropy carbide using a milling time of 60 min and a sintering temperature of 1,600℃.

• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 2004년도 International Symposium on Powder Materials and Processing
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• pp.96-97
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• 2004

• 한국세라믹학회지
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• 제34권2호
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• pp.175-180
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• 1997

새로운 복합페로브스카이트계 고용체 (1-x)Ba(Mg1/3Ta2/3)O3-xLa(Mg2/3Ta1/3)O3(x=0.0-1.0)를 설계하고 조성에 따른 고용체의 결정구조의 변화 및 MPB(Morphotropic Phase Boundary)를 분말 XRD를 이용하여 분석하였다. 초격자회절선의 변화로부터 MBT에 10mol%의 LMT를 치환함에 따라 1:2에서 1:1로의 규칙화타입의 전이가 일어남을 알 수 있었다. 면심입방정구조 영역(0.10.8조성의 경우, 주회절선의 피이크분리 및 새로운 회절선들로부터 격자비틀림의 형태가 단사정임을 알 수 있었다.

• 대한금속재료학회지
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• 제50권5호
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• pp.369-374
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• 2012

Nanopowders of Mo, Ta and Si were made by high-energy ball milling. A dense nanostructured $MoSi_2-TaSi_2$ composite was sintered by the high-frequency induction heated combustion method within 2 minutes from mechanically activated powder of Mo, Ta and Si. A highly dense $MoSi_2-TaSi_2$ composite was produced under simultaneous application of a 80 MPa pressure and the induced current. Mechanical properties and microstucture were investigated. The hardness and fracture toughness of the $MoSi_2-TaSi_2$ composite were $1200kg/mm^2$ and $3.5MPa.m^{1/2}$, respectively. The mechanical properties were higher than those of monolithic $MoSi_2$.

• 한국재료학회지
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• 제18권4호
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• pp.181-186
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• 2008

In this study, tantalum (Ta) compacts were fabricated in a spark plasma sintering (SPS) process and their microstructure and mechanical properties were investigated. Ta compacts with a density of 99% were successfully fabricated by controlling the sintering conditions of the current and the temperature. The density and hardness were increased as the sintering temperature increased. The $Ta_2C$ compound was observed at the surface of the compacts due to the contact between the Ta powder and graphite mold during the sintering process. The main fracture mode showed a mixed type with intergranular and transgranular modes having some roughness.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1996년도 The 9th KACG Technical Annual Meeting and the 3rd Korea-Japan EMGS (Electronic Materials Growth Symposium)
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• pp.526-526
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• 1996

The single crystal of LiTaO3 is well known eletro-optic material as well as the piezoelectric one applied to SAW filter. LiTaO3 has large electro-optic effects, so applied to optical switch, acosto-optic deflector, and optical memory device using photorefractive effects. The crystal growth of SAW-grade LiTaO3 has been studied many aspects, but there is no detail research about optic-grade crystal growth. The conditions of optic-grade LiTaO3 single crystal are as below. The optical transmittance must be over 75%, and axial and radial concentratiom uniformity below 1%. The variation of Curie temperature depending on Li/Ta ratio must be also below 2$^{\circ}C$ and no internal no internal cracks and defects. Because of the limitation of crystal quality, the growing of optic-grade LiTaO3 single crystal is very difficult compared with the growing of SAW-grade. In this research, upper conditions of optic-grade single crystal was investigated after growing of 1 inch diameter and 1.5 inch length LiTaO3 single crystal having no internal cracks and defects using Czochralski method. Curie temperature was determined with DSC and measuring capacitance and lattice parameter was calculated about the grown crystal and ceramic powder samples of various Li/Ta ratio. The result of Tc variation was below 1.2$^{\circ}C$ all over the grown crystal, so it is confirmed that LiTaO3 was grown under congruent melting composition having optical homogeniety. Also, the optical transmittance was about 78%, which was sufficient for optical device.