• Journal of the Korean Vacuum Society
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• v.3 no.2
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• pp.190-197
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• 1994

본 연구에서는 DC magnetron 스퍼터링법을 이용하여 고정밀, 고저항 저항체 박막으로 TaNx film을 제조하였을 때 형성될 수 있는 화합물 중 TaN0.1, TaN0.8과 TaN 박막의 Rs와 TCR특성을 평가하 고 film층의 우선방향성을 XRD를 이용하여 판명한 뒤 저항체의 Rs와 TCR에 미치는 영향을 조사하였 다. TaN0.1 박막이 35$\Omega$/$\square$의 면저항값과 안정된 TCR값을 나타내는 것을 알수 있었다. 두께50~200nm 의 TaN0.1과 Alumina 기판 사이에 정(+)의 TCR을 갖는 약 50nm의 Cr층을 증착하였을 때 Rs는 180$\Omega$/ $\square$ 과 TCR는 20ppm/$^{\circ}C$인 적층박막을 제조할 수 있었다. TaN0.1, TaN0.8 과 TaN 시편에서 화합물 형성 에 따른 Ta의 결합에너지를 ESCA를 이용하여 조사하였다. 이상의 연구결과로부터 TaN0.1 film이 TaNfilm 보다 고정밀, 고저항 박막 저항체 제조에 있어 우수한 전기저항 특성을 가지며 Cr 중간층 형성 으로 TCR이 $\pm$ppm/$^{\circ}C$정도로 안정된 고정밀 다층 저항체 박막을 형성할 수 있었다.

• Journal of the Korean Magnetics Society
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• v.10 no.6
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• pp.310-317
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• 2000

With use of (G)MR head, thermal asperity (TA) has been a big concern in drive industry. In this study, we investigated several factors of heads and disks which affects the TA sensitivity of the drive. TA experiments were conducted by introducing the particles on the drives using a particle injection chamber. It was found that the slider ABS shape can help to reduce TA or contamination in the head/media interface. However, TA sensitivity of the drive mainly depend on the intrinsic property of (G)MR sensor. GMR head is much less sensitive to TA compared with MR head. However, in case that the same bias current was applied for both of MR and GMR head, TA sensitivity of GMR head became almost identical to that of MR head. Therefore it was found that the bias current is a dominant factor in determining TA sensitivity of the head. TA sensitivity of different types of disks was also studied. The scratch resistance of the carbon overcoat layer is the one of the main factors which influence TA rejection capability of the disks.

• Journal of Food Hygiene and Safety
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• v.15 no.4
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• pp.297-303
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• 2000

Gamma irradiation at 20 kGy was applied to Kanjang (soy sauce), Doenjang (soybean paste), Kochujang (hot pepper pasts) and Chungkukjang for their possible genotoxicity. The genotoxicity of 20 kGy-irradiated samples was evaluated by Salmonella typhimurium reversion assay. The Salmonella tester strains included TA98, TA100, TA1535 and TA1537 in the absence and presence of an exogenous metabolizing system (59 mix). All samples were negative in the bacterial reversion assay with S. typhimurium TA98, TA100, TA1535 and TA1537. The results indicated that 20 kGy of gamma irradiation on water-soluble fraction of Kanjang, Doenjang, Kochujang and Chungkukjang were not shown mutagenicity.

• Journal of Advanced Navigation Technology
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• v.7 no.2
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• pp.211-216
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• 2003

In this paper, characteristics of Ta-Ti alloy was studied as a gate electrode for NMOS devices to replace the widely used polysilicon. Ta-Ti alloy was deposited directly on $SiO_2$ by a co-sputtering method using two of Ta and Ti targets. The sputtering power of each metal target was 100W. To compare with Ta-Ti, Ta deposited with a 100W sputtering power was fabricated as well. In order to investigate the thermal/chemical stability of the Ta-Ti alloy gate, the alloy was annealed at $600^{\circ}C$ with rapid thermal annealer. No appreciable degradation of the device was observed. Also the results of electrical analysis showed that the work function of Ta-Ti metal alloy was about 4.1eV which was suitable for NMOS devices and sheet resistance of alloy was lower than that of polysilicon.

• Journal of the Korean Magnetics Society
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• v.15 no.4
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• pp.226-230
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• 2005

In this research, magnetic properties and annealing effects of the spin valve structures were investigated, which have Ta underlayer deposited with Ar and $N_2$ gas mixture. Also, TaN underlayer as a diffusion barrier and the substrate were investigated. The structure of the spin valve was Si($SiO_2$)/Ta(TaN)/NiFe/CoFe/Cu/CoFe/FeMn/Ta. Deposition rate was decreased and resistivity and roughness of the TaN films were increased as the $N_2$ gas flow was increased. The XRD results after high temperature annealing showed that Silicides were created in Si/Ta layer, but not in Si/TaN layer. Magnetoresistance ratio (MR) and exchange coupling field ($H_{ex}$) were decreased when the $N_2$ gas flow was increased over 4.0 sccm. The MR of the spin valves with Ta and TaN films deposited with up to 4.0 sccm of $N_2$ gas flow was increased about $0.5\%$ until the annealing temperature of up to $200^{\circ}C$ and then, decreased. TaN film deposited with 8.0 sccm of $N_2$ gas flow showed twice the adhesion of the Ta film. The above results indicate that with 3.0 sccm of $N_2$ gas flow during the Ta underlayer deposition, the magnetic properties of the spin valves are maintained, while the underlayer may be used as a diffusion barrier and the adhesion between the Si substrate and the underlayer is increased.

• Toxicological Research
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• v.19 no.2
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• pp.141-146
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• 2003

A nonspecific immunostimulator $BARODON^{\circledR}$ was tested for mutagenicity using Ames Salmonella tester strains TA98, TA1 00, TA 102, TA 1535 and TA 1537 with or without metabolic activation (59 mix). None of the fresh species showed mutagenicity. In the reverse mutation test using Salmonella phimurium TA98, TA100, TA102, TA1535 and TA1537 did not increase the number of revertants at all doses tested (5, 2.5 or 1.25 mg/ml). Chromosome aberration test was carried out in Chinese hamster lung (CHL) cell line. The cells were treated with $BARODON^{\circledR}$ (1, 0.5 or 0.25 mg/ml), while positive control group was treated with Mitomycin C (0.1 mg/ml). The results show that there is no statistically significant difference between positive control and treatment groups. In mouse micronucleus test, there was significant increase in the ratio of micronucleated polychromatic erythrocyte (MNPCE) in the high dose group (10% $BARODON^{\circledR}$), while there is no significance between control and low (2.5% $BARODON^{\circledR}$) or middle (5% $BARODON^{\circledR}$ dose groups. Taken together, this results suggest that below 5% $BARODON^{\circledR}$ might not have mutagenic potential in vitro and vivo systems.

• Korean Journal of Materials Research
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• v.1 no.4
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• pp.229-235
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• 1991

A new electrode material for $Ta_2O_5$ capacitor was developed to obtain both high dielectric constant and improved electrical properties for use in DRAM. High leakage current and low breakdown field of as-deposited $Ta_2O_5$ film on Si is due to the reduction of $Ta_2O_5$ by silicon at $Ta_2O_5$/electrode interface. $Dry-O_2$ anneal improves the electrical properties of $Ta_2O_5$ capacitor with Si electrode, but it thickens the interfacial oxide and lowers the dielectric constant, subsequently. $Ta_2O_5$ capacitor with TiN exectrode shows better electrical properties and higher dielectric constant than post heat treated $Ta_2O_5$ film on Si. No interfacial oxide layer at $Ta_2O_5$/TiN interface suggests that there\`s no Interaction between $Ta_2O_5$ and electrode. TiN is a adequate electrode material for $Ta_2O_5$ capacitor.

• Resources Recycling
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• v.12 no.4
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• pp.51-57
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• 2003

Using the wastes of Ta powder fabrication process for capacitor, TaC powder was synthesized by SHS method. In previous to synthesis, the waste Ta was needed of milling and deoxidization treatments for active reaction and prevention of oxidation. In SHS reaction, it was found that the TaC single phase was obtained in composition of 5～6wt.％C. The reaction temperature was affected by the compaction pressure of the specimens, exhibiting the maximum values at 1600psi, respectively.

• Journal of the Korean Magnetics Society
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• v.3 no.1
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• pp.41-47
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• 1993

Effects of Ta addition on Co-Cr pependicular magnetic recording media were studied to obtain high perpen-dicular coercivity at lower substrate temperature. For the purpose. magnetic properties and microstructures of Co-Cr-(Ta) films were studied by varying the Cr contents from 17 to 21 at.% and Ta contents for 0 to 3.2 at.%. Effectiveness of Ta addition in increasing perpendicular coercivity was significant for lower Cr content films. The increasement of perpendicular coercivity was more pronounced for the films deposited on $100^{\circ}C$ heated substrate in the case of ${(Co_{83}Cr_{17})}_{98.4}Ta_{1.6}$ composition. The cause of the increase of perpendicular coercivity was considered due to not the grain refinement effects and the improvement of c-axis alignments but increase of Ta and Cr segregation.

• Journal of the Microelectronics and Packaging Society
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• v.7 no.2
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• pp.1-6
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• 2000

X-ray lithography mask with SiC membrane and Ta absorber patterns has been fabricated using ECR plasma CVD, d.c. magnetron sputtering, and ECR plasma etching. The stress of stoichiometric SiC film was adjusted by rapid thermal annealing under $N_2$, ambient. Adjusting the working pressure during sputtering process resulted in a near-zero residual stress, reasonable density, and smooth surface morphology of Ta film. Cl-based plasma showed a good etching characteristics of Ta, and two-step etching process was implemented to suppress microloading effect fur sub-quarter $\mu\textrm{m}$ patterning.