• 전자공학회논문지A
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• 제33A권7호
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• pp.121-126
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• 1996

In this paper an MMIC VCO which can be used in a double conversion TV tuner is designed, fabricated and measured. The VCO is designed using the small signal method and fabricated using ETRI GaAs MMIC foundry. The 3x200$\mu$m gate width MESFET with 1$\mu$m gate length is used for an active device and MIM capacitors, spiral inductors, thin film resitors are used as passive elements. The VCO has output power of 10.95dBm at 1955 MHz with 5V bias voltage and 4V tuning voltage. The oscillation frequency change form 1947 MHz to 1964 MHz is obtaine dby an external varactor diode connected to the gate with a tuning voltage from 0 V to 6V.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.1503-1506
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• 2008

A novel white-LED (light emitting diode) backlight system for 46"LCD TVs which involves the current controlled X-Y channel driving method is proposed in this paper. There are two problems related to the LED current in the conventional X-Y channel driving driven by a constant voltage source. To solve these problems, a real time current sensing system is applied to the conventional one and the time-division current sensing method is employed.

• 대한전자공학회논문지
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• 제7권2호
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• pp.33-42
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• 1970

액상과 고상의 불순물원을 사용한 이중확산법을 이용하여 초분수형 p-n 접합 VVC다이오드를 열작하고 그 특성을 측정하였다. 먼저 접합부근의 불순물분포를 지수난수로 근사시키고 여기에서 부터 유도되는 인가전압대 접태용총번계, 접합부에서의 섬계로계강도, 규재주파수 등을 고려하여 WC 다이오드외 새로운 담계수법을 위시하였다. 이 설계도표는 원하는 특성의 VVC다이오드를 번표와에서 나접 설계 할수있으므로 매우 사리하다. VVC다이오드는 2.5ohnm-cm의 n형, 실리콘박편위에 도너불순물 POCl3를 사용하여 선을 확정시키고, 다시 억셉터 불순물 BN을 사용하여 붕소를 확산시켜서, 접합깊이 2미크론에 초단계형접합을 만드므로서 제작하였다. 본연구에서 텔레비젼 수상기튜너용으로 시작한 다이오드의 최대용량대 총소용량의 비는 4:1이였고 그외의 전기적 제 특성도 이론적으로 설계한 값들과 거의 합치된 결과를 얻었다. 한편 이때의 실리콘 박편의 제작법과 확산기술에 관하여 간단히 기술하였다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제14권1호
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• pp.1-7
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• 2014

A bidirectional transient voltage suppression (TVS) diode consisting of specially designed $p^--n^{{+}+}-p^-$ multi-junctions was developed using low temperature (LT) epitaxy and fabrication processes. Its electrostatic discharge (ESD) performance was investigated using I-V, C-V, and various ESD tests including the human body model (HBM), machine model (MM) and IEC 61000-4-2 (IEC) analysis. The symmetrical structure with very sharp and uniform bidirectional multi-junctions yields good symmetrical I-V behavior over a wide range of operating temperature of 300 K-450 K and low capacitance as 6.9 pF at 1 MHz. In addition, a very thin and heavily doped $n^{{+}+}$ layer enabled I-V curves steep rise after breakdown without snapback phenomenon, then resulted in small dynamic resistance as $0.2{\Omega}$, and leakage current completely suppressed down to pA. Manufactured bidirectional TVS diodes were capable of withstanding ${\pm}4.0$ kV of MM and ${\pm}14$ kV of IEC, and exceeding ${\pm}8$ kV of HBM, while maintaining reliable I-V characteristics. Such an excellent ESD performance of low capacitance and dynamic resistance is attributed to the abruptness and very unique profiles designed very precisely in $p^--n^{{+}+}-p^-$ multi-junctions.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 하계학술대회 논문집 C
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• pp.1732-1734
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• 2001

The purpose of this experiment was to develope Triggered Vacuum Switch(TVS) and to improve understanding of the high current vacuum arc phenomena in the TVS. The TVS has an array of rods of alternate polarity in which a fixed gap spacing is maintained between the rods. The cross section of each rod has trapezoidal shape. Breakdown of the TVS produced high current vacuum arc plasma. A spectroscopic measurement was performed over 20 kA peak current in the center of electrodes, in the vicinity of cathode, and outside electrodes. The electrode material tested was Fe. Measured Fe spectrum range was from 200 nm to 900 nm. Measurement result showed that over 90 percent of the charge states were FeII and the others were FeI and FeIII. The electron temperature was determined from the relative line intensity ratio methode of FeII system by assuming the local thermal equilibrium(LTE). The electron temperature at the center of electrodes was measured as 1.5 eV at 26 kA peak current. The electron temperature varied with its peak current. Intensity of spectrums is the highest in the vicinity of the cathode. Further we will also present study result of the diode phenomena in the TVS.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.943-946
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• 2004

We report the laser scanning display as an emerging technology. We show demonstration system of laser TV, Video image is made by using a high speed MEMS scanning mirror and a direct-modulated red diode laser. We designed and fabricated MEMS scanning mirror. The first demonstration system showed a NTSC-resolution video image with the image size of 5 inches. The successful development of compact laser TV will open a new area of home application of the laser light.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2008년도 하계학술대회 논문집
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• pp.271-273
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• 2008

A novel white-LED (light emitting diode) backlight system for 46"LCD TVs which involves the average current controlled X-Y channel driving method is proposed, which is composed of 1 converter and row and column channel switches. In the conventional X-Y channel driving driven with a constant voltage source, the driving current of LED increases because the threshold voltage of LED decreases when LED temperature goes up. To maintain the luminance of backlight constant, the average current controlled X-Y channel driving will be employed. Finally the results are confirmed by experimental results.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.1163-1167
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• 2008

Since Samsung SDI and Sony started mass production of AM-OLED display for mobile/TV applications, OLED technology has emerged as leading candidate among the many technologies under development for next generation Flat panel displays. P-OLED (Polymer Organic Lighting Emitting Diode) technology, a class of OLED, is gathering momentum towards commercialization. P-OLED technology has made tremendous progress in terms of display performance (including life time, efficiency and color gamut) and in the maturity of ink jet printing process and equipment. In order to get into the mobile/TV application market successfully, P-OLED display technology must meet the following display makers' requirements: (1) P-OLED Display Performance in terms of lifetime, efficiency, and color coordinates, (2) Low Cost Manufacturing Technology such as "Solution Processable Printing Technology". P-OLED technology has already overcome many of the hurdles to mass manufacturing. In this paper, the latest developments in ink jet printing technology, including P-OLED material performance, is discussed.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.119-122
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• 2008

In this paper, we describe the current status and issues of the oxide thin-film transistors (OTFTs), which attract much attention as an emerging new backplane technology replacing conventional silicon-based TFTs technologies. First, the unique benefits of OTFTs will be presented as a backplane for large-sized AMOLED including note-book PC, second TV and HD-TV. And then, the state-of-the-art transistor performance and uniformity characteristics of OTFTs will be highlighted. The obtained a-IGZO TFTs exhibited the field-effect mobility of $18\;cm^2/Vs$, threshold voltage of 1.8 V, on/off ratio of $10^9$, and subthreshold gate swing of 0.28 V/decade. In addition, the world largest-sized 12.1-inch WXGA active-matrix organic light emitting diode (AMOLED) display is demonstrated using indium-gallium-zinc oxide (IGZO) TFTs.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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• pp.1001-1004
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• 2007

This paper proposes a novel RGB-LED (light emitting diode) backlight system, for 32" LCD TVs, accompanied by a new X-Y Channel driving method in which its row and column switches control the individual division screen. This proposed driving method is able to produce division driving effects such as image improvement and reduced power consumption. Not only that, the number of driver needed in this method, that is 3 power supplies with 3*(m+n) switches, is much fewer than that of cluster driving method, that is 3*(m*n) driver.