• 대한전기학회:학술대회논문집
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• 대한전기학회 2011년도 제42회 하계학술대회
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• pp.1491-1492
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• 2011

In this study, we investigated about the effect of hole transport layer materials(${\alpha}$-NPD, TPD) depending on the electrical properties of organic light emitting diode. In deposition method, we used thermal evaporation and it was a method for performing thin film by attaching vaporizing a molecule to substrate in a high thermal and vaccum. We analyzed luminance, current density, external quantum efficiency and current efficiency in 40 [nm] as optimization thickness of ${\alpha}$-NPD and TPD. In result of experiment, maximum luminance of TPD had 1.1 times higher than ${\alpha}$-NPD, but ${\alpha}$-NPD had luminance, external quantum efficiency, and current efficiency higher than TPD in low operating voltage. Actually, ${\alpha}$-NPD had efficiency higher than TPD in low operating voltage.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.534-537
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• 2002

We have studied conduction mechanism that is interpreted in terms of space charge limited current (SCLC) region and tunneling region. The OLEDs are based on the molecular compounds, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine (TPD) as a hole transport, tris (8- hydroxyquinolinoline) aluminum(III) $(Alq_3)$ as an electron injection and transport and emitting later, copper phthalocyanine (CuPc) and poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) and poly(vinylcarbazole) (PVK) as a buffer layer respectively. Al was used as cathode. We manufactured reference structure that has in ITO/TPD/$Alq_3$/Al. Buffer layer effects were compared to reference structure. And we have analyzed out luminance efficiency-voltage characteristics in ITO/Buffer layer/TPD/$Alq_3$/Al with buffer-layer materials.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2004년도 하계학술대회 논문집 C
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• pp.1564-1566
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• 2004

BCP의 이온화에너지 (Ionization Potential; IP)는 5.72ev와 전자친화도 (Electron Affinity; EA)는 2.85ev이며, PEDOT의 IP=5.74ev와 EA=3.3sev이고, TAZ의 IP=6.45ev와 EA=2.77ev, TPD는 IP=5.75ev와 EA=2.S8eV를 나타내었다. 그리고 BCP와 TAZ는 산화전위의 시작점과 증가곡선의 전위 변곡점과의 차이(정공층 갭)와 환원전위의 시작점과 변곡점의 차이(전자층 갭)가 서로 비슷하였으며, PEDOT과 TPD의 경우 정공층의 갭이 전자층의 갭보다 크게 나타났다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.171-171
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• 2009

We have investigated dielectric properties depending on temperature and voltage in organic light-emitting diodes using N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-di-amine (TPD) as an hole transport. We analyzed the Cole-Cole plot of TPD. When the voltage is over 3 V, we found that a radius of Cole-Cole plot and $\beta$ increase as the temperature increases to 65 $^{\circ}C$, However, as the over the 65 $^{\circ}C$, those values decrease. Also, when the voltage is below 3 V, a radius of cole-cole plot and $\beta$ increase with the increased temperature.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 추계학술대회 논문집 학회본부 C
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• pp.792-794
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• 1998

The TPD and the $Alq_3$ film are widely used as a hole transport layer and an emitter layer respectively, in organic electroluminescent(EL) device (ITO Glass/TPD/$Alq_3$/metal). In this structure, we fabricated two models. Model(1) having ITO glass/$Alq_3$/Al structure and model(2) having ITO Glass/TPD/$Alq_3$/Al structure were fabricated by the vacuum evaporation. The comparison between model(1) and model(2) was made about the absorbance, the wave length, the current-voltage characteristic and the ln I - $V^{(1/2)}$characteristic respectively. Electroluminescence of green and wavelength of 510[nm] were observed in both model. We observed absorbance from 320[nm] to 430[nm] in $Alq_3$ material and from 250[nm] to 400[nm] in TPD material.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.533-534
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• 2005

Temperature-dependent current-voltage characteristics of organic light-emitting diodes(OLEDs) were studied in a device structure of ITO/TPD/$Alq_3$/Al. The OLEDs were based on the molecular compounds, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-l,1'-diphenyl-4,4'-diamine(TPD) as a hole transport and tris(8-hydroxyquinoline) aluminum($Alq_3$) as an electron transport and emissive material. The current-voltage characteristics were measured in the temperature range of 10K and 300K. We analyzed an electrical conduction mechanism of the OLEDs using space-charge-limited current(SCLC) and Fowler-Nordheim tunneling.

• 한국재료학회지
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• 제15권7호
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• pp.448-452
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• 2005

This study was based on organic electroluminescence display. Especially, TPD and $\alpha-NPD$ for the hole transport materials were synthesized by Ullmann reaction. This reaction was conducted between 3­methylphenylamine, 1-naphthylamine and 4,4'-diiodobiphenyl in toluene containing CuCl catalyst and KOH base. The structural property of reaction products were analyzed by FT-IR, $^1H-NMR$ spectroscopy, and thermal stability, reactivity and PL property were analyzed by melting point, yield and emission spectrum, respectively. The photoluminescence spectra of a pure TPD and $\alpha-NPD$ were observed at approximately 416nm and 438nm respectively. In this study, it was known that the melting point, yield, PL properties of TPD and $\alpha-NPD$ were changed by substituent group of amines.

• 한국에너지공학회:학술대회논문집
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• 한국에너지공학회 2004년도 춘계 학술발표회 논문집
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• pp.151-155
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• 2004

• 한국재료학회:학술대회논문집
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• 한국재료학회 2002년도 추계학술발표강연 및 논문개요집
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• pp.88-88
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• 2002

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.542-545
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• 2002

High performance organic electroluminescnet(EL) devices which are composed of organic thin multilayer films are fabricated. The basic structure is ITO/Emitting layer/LiF/Al in which have a blended emitting layer. The emitting layer is consisted of a host material(N,N' diphenyl-N,N' (3-methyl phenyl)-l,l'-biphenyl-4,4'diamine)(TPD)) and a guest emitting material(poly(3-hexylthiophehe)(P3HT)). We think that the energy transfer in blending layer occurred from TPD to P3HT. Red emitting multilayer EL devices were fabricated using tris(8-hydroxyqunolinate) aluminum$(Alq_3)$ as electron transport material. The device structure of ITO/blending layer(TPD+P3HT)$/Alq_3$/LiF/Al was employed. In the Voltage-current-luminance characteristics of multilayer device, the device tum on at the 2V and the luminance of $10{\mu}W/cm^2$ obtain at l0V. Red emission peak at 640nm was observed with this device structure. We have presented evidence that the excitation energy migration between a polymeric host and guest has to be explained. And by using multilayer, the red light emitting EL device enhances not only Voltage-current-luminance characteristic but also stability of device.