• Proceedings of the Materials Research Society of Korea Conference
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• 2007.11a
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• pp.94.2-94.2
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• 2007

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.2
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• pp.170-178
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• 2010

In this paper, we propose the modeling of the power/ground plane which includes complex dielectric permittivity and loss tangent for the power/ground coupled noise. In order to estimate the effects of the dielectric substrate for the coupled noise, we used full-wave simulators, HFSS(High Frequency Structure Simulation) and MWS(MicroWave Studio). The simulated results for the commercial substrates are compared with the measured values. TLM(Transmission Line Method) was used for the calculation of power plane impedance using Debye model which depicts the dielectric loss of PCB. Finally, impedance from proposed circuit model showed very good coincidence to the measured data.

• Korean Journal of Optics and Photonics
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• v.18 no.2
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• pp.155-161
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• 2007

A new and simple method of 3-dimensional circuit modeling and analysis is proposed and verified experimentally for the first time by determining 3-dimensional current flow and 2-dimensional light distribution in blue InGaN/GaN multi-quantum well (MQW) light emitting diode (LED) devices. Circuit parameters of the LED consist of the resistance of the metallic film and epitaxial layer, and the intrinsic diode which represents the active region emitting the light. The circuit parameters are extracted from the transmission line model (TLM) and current-voltage relation. We applied the >> proposed method and extracted circuit parameters to obtain the light emission pattern in a top-surface emitting-type LED. The current spreading effect is analyzed theoretically and quantitatively with a variation of the resistance of metallic and epitaxial layers. The emitting-light distribution of the fabricated blue LED showed a good agreement with the analyzed result, which shows the dark emission intensity at the corner of the p-electrode.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2002.11a
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• pp.73-77
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• 2002

Characteristics of Cu/Si/Cu ohmic contacts to n-type 4H-SiC were investigated systematically. The ohmic contacts were formed by rf sputtering of multi layer Cu/Si/Cu sputtered sequentially. The annealings were peformed With 2-Step using RTP in vacuum ambient. The specific contact resistivity($\rho$c), sheet resistance(Rs), contact resistance(Rc), transfer length(L$_{T}$) were calculated from resistance(R$_{T}$) versus contact spacing(d) measurements obtained from TLM(transmission line method) structure. Best results were obtained for a sample annealed at vacuum as $\rho$c = 1.0x10$^{-6}$ $\Omega$$\textrm{cm}^2$, Rc = 2$\Omega$ and L$_{T}$ = 1${\mu}{\textrm}{m}$. The physical properties of contacts were examined using XRO and AES. The results showed that copper silicide was formed on SiC and Cu was migrated into SiC.o SiC.

• Journal of Practical Engineering Education
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• v.9 no.2
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• pp.167-174
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• 2017

The purpose of this paper is to review the effects of the $4^{th}$ Industrial Revolution on job competency development by the Transitional Labor Market(TLM) model, and suggest job competency development policiy in the rea of the $4^{th}$ Industrial Revolution. The $4^{th}$ Industrial Revolution will create new jobs, destroy many current jobs, and will fundamentally change employment pattern, contents of jobs and ways of works. In these circumstances, we will confront more risks in each stage of labor market transition. To minimize the risks of TLM, we should reform education and develop life time career and job competency. We have to train high level talented persons to lead the $4^{th}$ Industrial Revolution. We have to retrain employed people to adjust new technology and to enhance employability and adaptability. We have to train vulnerable groups so that they may adjust new circumstance. Government should develop life time job competency development open platform.

• Korean Journal of Environmental Agriculture
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• v.3 no.2
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• pp.43-49
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• 1984

The acute toxicity of an insecticide cartap to several species of freshwater animals was evaluated in the laboratory with special reference to the species specificity, effects of water temperatures and pH values. The aquatic animals tested were the Carassius auratus L., Aphyocypris chinensis $G{\"{U}}NTHER$, Misgurus anguillicaudatus CANTOR, Moina macrocopa STRAUS. The susceptibility of aquatic animals to cartap was different with the species of animals. At the water temperature of $25^{\circ}C$ and pH 7, TLm values of the insecticide to the C. auratus L., A. chinensis G. and M. anguillicaudatus were 0.88, 0.26 and 0.13 ppm in 48 hours, respectively, and to Moina macrocopa S., 306 ppm in 3 hrs. In the case of the three species of fish, TLm 48 values were significantly decreased with rise in temperature. In the case of water flea, where TLm value was 107 ppm at $20^{\circ}C$, there was no consistent response to temperature change, with the highest figure at $25^{\circ}C$ than at either 20 or $30^{\circ}C$. and the susceptibility of C.auratus L. and A. chinensis G. greatly decreased with the increase of pH in water. The toxicity to M. anguillicaudatus and M. macrocopa was significantly higher at pH 9 than at pH 6 or 7. In conclusion, the toxicological reactions of the freshwater animals to cartap were variably influenced by the water temperatures and pH values of water and species of animals.

• Journal of the Korean Vacuum Society
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• v.20 no.5
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• pp.339-344
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• 2011

The Ohmic contact of Ti/Au metals on n-type ZnO thin film deposited on c-plane sapphire substrates by pulsed laser deposition was investigated by TLM (transfer length method) patterns. The Ti/Au metal films with thickness of 35 nm and 90 nm were deposited by electron-beam evaporator and thermal evaporator, respectively. By using the photo-lithography method, the $100{\times}100{\mu}m^2$ TLM patterns with $6{\sim}61{\mu}m$ gaps were formed. To improve the electrical properties as well as to decrease an interface states and stress between metal and semiconductor, the post-annelaing process was done in oxygen ambient by rapid thermal annealing system at temperature of $100{\sim}500^{\circ}C$ for 1 min. In this study, it appeared that the minimum specific contact resistivity shows about $1.1{\times}10^{-4}{\Omega}{\cdot}cm^2$ in $300^{\circ}C$ annealed sample, which may be originated from formation of oxygen vacancies of ZnO during an oxidation of Ti metal at the interface of Ohmic contacts.

• The Proceeding of the Korean Institute of Electromagnetic Engineering and Science
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• v.2 no.4
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• pp.66-73
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• 1991

This paper reviews two representative time-domain techniques for the simulation of the electromagnetic fields, which are known as FD - TD and TLM. The fundamental ideas of two tec- hniques are explained in detail. Also, the implimentation of the boundary conditions, the statability condition, and the representation of media in the problems are described briefly.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.265.1-265.1
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• 2016

여러 application에 적용하기 위하여 p-type SnO 박막과 전극 간의 접촉 저항을 분석이 필요하였다. 이를 Transmission Line Method(TLM) 패턴 소자를 제작한 후 전기적 특성을 분석함으로써 알 수 있었다. $Si/SiO_2$ 기판에 Reactive Magnetron Sputtering법을 이용하여 c축 우선 배향된 SnO를 100nm 증착하고 photolithography 공정을 통해 전극을 패턴화하여 100nm 두께로 증착하였다. 전극 간 거리는 1, 2, 4, 8, 16, 32, 64, 128, 256, 512, $1024{\mu}m$로 각각 2배씩 증가하는 패턴이고 폭 W는 $300{\mu}m$ 이다. p-type SnO 의 경우, work function이 4.8eV이기 때문에 전극과 ohmic contact이 되기 위해서는 4.8eV보다 높은 work function 값을 가지는 전극이 필요하였다. 이 조건과 맞는 후보로 Ni(5.15eV), ITO(5.3eV)를 설정한 후 소자를 제작하였다. 제작된 소자는 열처리 하지 않은 소자와 Rapid Thermal Annealing(RTA) 장비에서 $100^{\circ}C$, $200^{\circ}C$, $300^{\circ}C$에서 각각 1분씩 열처리한 소자의 특성을 분석하였다. 열처리 하지 않은 소자의 경우 Ni 전극의 specific contact resistance는 $3.42E-2{\Omega}$의 값을 나타내었고, ITO의 경우 $3.62E-2{\Omega}$값을 나타내었다.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.53 no.10
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• pp.495-499
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• 2004

Characteristics of ohmic Ni/Si/Ni contacts to n-type 4H-SiC are investigated systematically. The ohmic contacts were formed by annealing Ni/Si/Ni sputtered sequentially The annealings were performed at 950℃ using RTP in vacuum ambient and N₂ ambient, respectively. The specific contact resistivity(p/sub c/), sheet resistance(R/sub s/), contact resistance (R/sub c/) transfer length(L/sub T/) were calculated from resistance(R/sub T/) versus contact spacing(d) measurements obtained from TLM(transmission line method) structure. While the resulting measurement values of sample annealed at vacuum ambient were p/sub c/ = 3.8×10/sup -5/Ω㎠, R/sub c/ = 4.9 Ω and R/sub T/ = 9.8 Ω, those of sample annealed at N₂ ambient were p/sub c/ = 2.29×10/sup -4/Ω㎠, R/sub c/ = 12.9 Ω and R/sub T/ = 25.8 Ω. The physical properties of contacts were examined using XRD 3nd AES. The results showed that nickel silicide was formed on SiC and Ni was migrated into SiC. This result indicates that Ni/Si/Ni ohmic contact would be useful in high performance electronic devices.