• Journal of Food Hygiene and Safety
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• v.1 no.2
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• pp.177-179
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• 1986

ABSTRACT$.$Seven species of mushrooms (Sarcodon asparatus, Agaricus bisporus. Calocybe gambosa, Len tin us ,edodes.Ramariabotrytis.Pleurotus ostreatus and Tricholoma matsutake) produced in Korea were investigated on their mineral contents mainly by using Inductively coupled plasma-technique. The obtained results are summerized as follows: 1) Fe, N a and Zn are relativel highly contained in almost all mushrooms tested in this study. 2) Harmful elements such as Cd, Hg. Pb and As, were found only in trace amounts. 3) Sb, Se and Sn were not detected in all mushrooms.hrooms.

• Journal of the Korean institute of surface engineering
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• v.15 no.4
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• pp.192-207
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• 1982

A study has been made of the interaction parameters of Zn other elements in dilute solutesd solution of molten cadmium alloys over the temperature range of 450 to 570$^{\circ}C$. The experi-mental measurementss were made in a touch instant cell using a fusedd Licl-KCl electrolyte. The activity of zinc in binary and ternary solutions sexhibiteds a strong positive deviation from Raoult's law. The addition of silver, indium or lead increased the activity of zinc whereas addition of copper, bismuth or tin decreased the zinc activity slightly. The results for all the metallic solutions showed a linear dependence of reciprocal of ab-solute temperature over the experimental range. The interaction parameters obtained are as follows.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.334-334
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• 2012

Transparent oxide semiconductors have recently attracted much attention as channel layer materials due to advantageous electrical and optical characteristics such as high mobility, high stability, and good transparency. In addition, transparent oxide semiconductor can be fabricated at low temperature with a low production cost and it permits highly uniform devices such as large area displays. A variety of thin film transistors (TFTs) have been studied including ZnO, InZnO, and InGaZnO as the channel layer. Recently, there are many studies for substitution of Ga in InGaZnO TFTs due to their problem, such as stability of devices. In this work, new quaternary compound materials, tantalum-indium-tin oxide (TaInSnO) thin films were fabricated by using co-sputtering and used for the active channel layer in thin film transistors (TFTs). We deposited TaInSnO films in a mixed gas (O2+Ar) atmosphere by co-sputtering from Ta and ITO targets, respectively. The electric characteristics of TaInSnO TFTs and thin films were investigated according to the RF power applied to the $Ta_2O_5$ target. The addition of Ta elements could suppress the formation of oxygen vacancies because of the stronger oxidation tendency of Ta relative to that of In or Sn. Therefore the free carrier density decreased with increasing RF power of $Ta_2O_5$ in TaInSnO thin film. The optimized characteristics of TaInSnO TFT showed an on/off current ratio of $1.4{\times}108$, a threshold voltage of 2.91 V, a field-effect mobility of 2.37 cm2/Vs, and a subthreshold swing of 0.48 V/dec.

• Journal of Powder Materials
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• v.25 no.4
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• pp.302-308
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• 2018

A lean alloy is defined as a low alloy steel that minimizes the content of the alloying elements, while maintaining the characteristics of the sintered alloy. The purpose of this study is to determine the change in microstructure and mechanical properties due to the addition of silicon or tin in Fe-Mo-P, Fe-Mn-P, and Fe-Mo-Mn-P alloys. Silicon- or tin-added F-Mo-P, Fe-Mn-P, and Fe-Mo-Mn-P master alloys were compacted at 700 MPa and subsequently sintered under a $H_2-N_2$ atmosphere at $1120^{\circ}C$. The sintered density of three alloy systems decreases under the same compacting pressure due to dimensional expansion with increasing Si content. As the diffusion rate in the Fe-P-Mo system is higher than that in the Fe-P-Mn system, the decrease in the sintered density is the largest in the Fe-P-Mn system. The sintered density of Sn added alloys does not change with the increasing Sn content due to the effect of non-dimensional changes. However, the effect of Si addition on the transverse rupture strengthening enhancement is stronger than that of Sn addition in these lean alloys.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2012.11a
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• pp.16-16
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• 2012

Mg and its alloys have been of great interest because of their low density of 1.7, 30% lighter than Al, but their wide applications have been limited because of their poor resistances against corrosion and/or abrasion. Corrosion resistance of Mg alloys can be improved by formation of anodic films using anodic oxidation method in aqueous electrolytes. Plasma electrolytic oxidation (PEO) is one of anodic oxidation methods by which hard anodic films can be formed as a result of micro-arc generation under high electric field. PEO method utilize not only substrate elements but also chemical components in electrolytes to form anodic films on Mg alloys. PEO films formed on AM50 magnesium alloy in an acidic fluozirconate electrolyte were observed to consist of mainly $ZrO_2$ and $MgF_2$. Liu et al reported that PEO coating on AM30 Mg alloy consists of $MgF_2$-rich outer porous layer and an MgO-rich dense inner layer. PEO films prepared on ACM522 Mg die-casting alloy in an aqueous phosphate solution were also reported to be composed of monoclinic $Mg_3(PO_4)_2$. $CeO_2$-incorporated PEO coatings were also reported to be formed on AZ31 Mg alloys in $CeO_2$ particle-containing $Na_2SiO_3$-based electrolytes. Magnesium tin hydroxide ($MgSn(OH)_6$) was also produced on AZ91D alloy by PEO process in stannate-containing electrolyte. Effects of $OH^-$, $F^-$, $PO{_4}^{3-}$ and $SiO{_3}^{2-}$ ions and alloying elements of Al and Sn on the formation of PEO films on pure Mg and Mg alloys and their protective properties against corrosion have been investigated in this work. $PO{_4}^{3-}$, $F^-$ and $SiO{_3}^{2-}$ ions were observed to contribute to the formation of PEO films but $OH^-$ ions were found to break down the surface films under high electric field. The effect of pulse current on the formation of PEO films will be also reported.

• Journal of Korea Foundry Society
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• v.29 no.3
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• pp.128-137
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• 2009

The effects of alloying elements on the mechanical properties of 3.6wt%C-2.6wt%C ductile cast iron poured into shell stack molds were investigated. The strength and hardness of the specimens obtained from the center layer in the 5-story stack mold were the lowest and those for other specimens were increased with increased distance from the center. The strength and hardness of the specimens obtained from the center layer were decreased with increased number of layers of the shell stack mold. The strength and hardness of the smaller specimens with the diameter of 9.5 mm were higher than those of 17.5 mm. On the other hand, the elongation of the former was lower than that of the latter. The strength and hardness were increased and the elongation was decreased roughly with the increased amounts of manganese and copper added, respectively. The strength and hardness were increased with the incrcased amount of molybdenum added to 0.40wt% and rather decreased with that to 0.80wt%. Those were greatly increased with the increased amount of tin added and the elongation was roughly decreased with it.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.209-209
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• 2003

The adventages of Li alloys have attracted the attention of many research groups, many of which have investigated tin-based alloys [1-2], Despite interesting performances of these, the irreversible capacity loss systematically observed on the first cycle for these compounds is a main drawback for their use as anode materials in lithium ion cells. Not only Sn is efficient in forming alloys with Li, Si can also react with Li to form alloys with a high Li/Si ratio, like Li$\_$22/Si$\_$5/ at 400$^{\circ}C$. It corresponds to a capacity of 4200mAh/g. Electrochemical Li-Si reaction occurs between 0 and 0.3 V against Li/Li$\^$+/, so that high-energy density battery can be realized. Despite the high theoretical capacity of elements like Si, however, particles of the alloys crack and fragment due to the repeated alloying and do-alloying which occurs as cell are charged and discharged. The research groups of Muggins [3] and Besenhard [4] have proposed that the volume expansion due to the insertion of Li can be reduced in micro- and submicro-structured matrix alloys. For this reason, the research group of J.R. Dahn investigated Sn/Mo sequential sputter deposition to prepare nanocomposites [5]. In this study, we investigated the characterization and the electrochemical characteristics of sequentially sputtered Si/Mo multilayer for microbattery anode.

• Journal of the Microelectronics and Packaging Society
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• v.21 no.1
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• pp.13-17
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• 2014

The direct-patternable $SnO_2$ thin film was successfully fabricated by photochemical metal-organic deposition. The composition and chemical bonding state of $SnO_2$ thin film were analyzed by using X-ray photoelectron spectroscopy (XPS) from the surface to the interface with Si substrate. XPS depth profiling analysis allowed the determination of the atomic composition in $SnO_2$ film as a function of depth through the evolution of four elements of C 1s, Si 2p, Sn 3d, and O 1s core level peaks. At the top surface, nearly stoichiometric $SnO_2$ composition (O/Sn ratio is 1.92.) was observed due to surface oxidation but deficiency of oxygen was increased to the interface of patterned $SnO_2/Si$ substrate where the O/Sn ratio was about 1.73~1.75 at the films. This O deficient state of the film may act as an n-type semiconductor and allow $SnO_2$ to be applied as a transparent electrode in optoelectronic applications.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.198.2-198.2
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• 2014

We investigated change of the electronic structure, chemical states and elements ratio in graphene film by using photoelectron spectroscopy (PES). The graphene electrode has attracted considerable interest due to its possible applications in flexible organic light emitting diodes (F-OLEDs). However, to use the graphene for OLEDs, sufficient increase of work function is required, that is related with hole injection barrier. Plasma treatment is one of the most widely used method in OLEDs to increase the work function of the anode such as indium tin oxide (ITO). In this work, we used the plasma treatment, which is generated by various gas types such as O2, and Ar to increase the work function of the graphene film. From these results, we discuss the relation among the change of work function, plasma power, plasma treatment time and gas types.

• Research in Mathematical Education
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• v.15 no.1
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• pp.31-44
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• 2011

An impetus for reviving research in mathematical problem solving is the recent advance in methodological thinking, namely, the design experiment ([Gorard, S. (2004). Combining methods in educational research. Maidenhead, England: Open University Press.]; [Schoenfeld, A. H. (2009). Bridging the cultures of educational research and design. Educational Designer. 1(2). http://www.educationaldesigner.orgied/volume1/issue21]). This methodological approach supports a "re-design" of contextual elements to fulfil the overarching objective of making mathematical problem solving available to all students of mathematics. In problem solving, components critical to successful design in one setting that may be adapted to suit another setting include curriculum design, assessment strategy, teacher capacity, and instructional resources. In this paper, we describe the implementation, over three years, of a problem solving module into the main mathematics curriculum of an Integrated Programme school in Singapore which had sufficient autonomy to tailor-fit curriculum to their students.