• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2014.05a
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• pp.748-751
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• 2014

This paper has analyzed threshold voltage movement for channel doping concentration of asymmetric double gate(DG) MOSFET. The asymmetric DGMOSFET is generally fabricated with low doping channel and fully depleted under operation. Since impurity scattering is lessened, asymmetric DGMOSFET has the adventage that high speed operation is possible. The threshold voltage movement, one of short channel effects necessarily occurred in fine devices, is investigated for the change of channel doping concentration in asymmetric DGMOSFET. The analytical potential distribution of series form is derived from Possion's equation to obtain threshold voltage. The movement of threshold voltage is investigated for channel doping concentration with parameters of channel length, channel thickness, oxide thickness, and doping profiles. As a result, threshold voltage increases with increase of doping concentration, and that decreases with decrease of channel length. Threshold voltage increases with decrease of channel thickness and bottom gate voltage. Lastly threshold voltage increases with decrease of oxide thickness.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2014.05a
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• pp.755-758
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• 2014

This paper has analyzed the change of threshold voltage for oxide structure of symmetric and asymmetric double gate(DG) MOSFET. The asymmetric DGMOSFET can be fabricated with different top and bottom gate oxide thickness, while the symmetric DGMOSFET has the same top and bottom gate oxide thickness. Therefore optimum threshold voltage is considered for top and bottom gate oxide thickness of asymmetric DGMOSFET, compared with the threshold voltage of symmetric DGMOSFET. To obtain the threshold voltage, the analytical potential distribution is derived from Possion's equation, and Gaussian distribution function is used as doping profile. We investigate for bottom gate voltage, channel length and thickness, and doping concentration how top and bottom gate oxide thickness influences on threshold voltage using this threshold voltage model. As a result, threshold voltage is greatly changed for oxide thickness, and we know the changing trend very differs with bottom gate voltage, channel length and thickness, and doping concentration.

• Communications for Statistical Applications and Methods
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• v.14 no.1
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• pp.141-146
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• 2007

In this paper, we consider a Box-Cox transformed threshold GARCH(1,1) process and find a sufficient condition under which the process is geometrically ergodic and has the ${\beta}$-mixing property with an exponential decay rate.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2012.10a
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• pp.911-912
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• 2012

• Proceedings of the Optical Society of Korea Conference
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• 2005.02a
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• pp.288-289
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• 2005

To study the photon statistics, the total counts probability was measured for the two different optical source : below-threshold with Bose-Einstein distribution, and above-threshold laser with Poisson distribution.

• Proceedings of the Korean Society of Toxicology Conference
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• 2003.10b
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• pp.24-25
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• 2003

Genotoxicity plays an important role for the safety evaluation of chemicals. When the carcinogenicity is evident on a chemical, the threshold can be estimated only when genotoxic mechanism does not operate for carcinogenesis otherwise threshold cannot be set. Without genotoxic mechanism- non-genotoxic carcinogen-threshold can be estimated but with genotoxic mechanism-genotoxic- carcinogen-it cannot be estimated.(omitted)

• Proceedings of the Korean Information Science Society Conference
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• 2005.11a
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• pp.949-951
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• 2005

ID기반의 암호 시스템은 사용자의 ID를 공개키처럼 활용하는 시스템[1]이다. ID 기반 threshold 대리 서명(IDTPS)은 이러한 환경에서 사용 가능한 threshold 대리 서명 기법이며, Xu 등[2]에 의해 SOK-IBS[3]를 기반으로 처음 만들어졌다. 본 논문에서는 Cha-Cheon[4]의 서명 기법을 기반으로 하는 효율적인 ID 기반의 threshold 대리 서명을 제안한다. 여기서는 pairing 연산을 적게 사용하고 pairing에 사용되는 군으로 사상되는 해쉬 함수를 적게 사용하기 때문에 이전 기법보다 효율적이면서도 충분한 안전성을 보장하게 된다.

• Journal of information and communication convergence engineering
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• v.9 no.6
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• pp.733-737
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• 2011

This paper has studied subthreshold characteristics for double gate(DG) MOSFET using Gaussian function in solving Poisson's equation. Typical two dimensional analytical transport models have been presented for symmetrical Double Gate MOSFETs (DGMOSFETs). Subthreshold swing and threshold voltage are very important factors for digital devices because of determination of ON and OFF. In general, subthreshold swings have to be under 100mV/dec, and threshold voltage roll-off small in short channel devices. These models are used to obtain the change of subthreshold swings and threshold voltage for DGMOSFET according to channel doping profiles. Also subthreshold swings and threshold voltages have been analyzed for device parameters such as channel length, channel thickness and channel doping profiles.

• The Journal of Korean Academy of Prosthodontics
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• v.8 no.1
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• pp.77-79
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• 1968

The swallowing threshold tests were conducted on the 8 subjects over one month of full denture wearing experience of Korean. The results were follows. 1) The swallowing threshold of the full denture wearer was higher than that of the normal control group. 2) The swallowing threshold of the full denture wearer was different according to the quality and quantity of the test food. 3) The swallowing threshold of full denture wearer seemed to be no correlation between short and long duration of wearing experience.

• Journal of the Korean Institute of Telematics and Electronics
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• v.22 no.1
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• pp.22-27
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• 1985

본 논문에서는 채널에 붕소를 이온주입하여 불균일한 도우핑 profile을 가지는 n-채럴 MOSFET의 threshold 전압에 대하여 보다 간단한 모델링을 기술하였다. 실제의 도우핑 Profile들 지수적인 Profile을 지수적인 profile로 근이시키고 Poisson방정식과 depletion approximation을 이용하여 실리콘 표면의 Potential, 최대 공핍층의 폭 그리고 threshold 전압을 구하였다. 계산한 threshold 전압이 실험치와 잘 일치한다는 사실은 이온 주입한 MOS소자들에 대하여 지수적인 도우핑 Profile로 근이시킬 수 있다는 타당성을 보여 주고 있다.