• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2008.11a
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• pp.56-56
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• 2008

연소화학증착법(CCVD)를 이용해 IN738LC 합금에 $SiO_2$ 보호피막 코팅을 행하였다. 소스물질인 TEOS 첨가량과 증착 시간을 변화시키면서 $SiO_2$ 보호피막을 제조하였다. 증착된 코팅층은 SEM, EDX, XPS 분석을 통해 $SiO_2$층임 을 확인하였고 TGA(Thermogravimetric analysis)를 이용하여 합금의 내산화 특성을 평가하였다.

• Korean Journal of Materials Research
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• v.16 no.12
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• pp.719-724
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• 2006

Ultrafine mullite powder was prepared from aluminium-secbutoxide and tetraethyl orthosilicate(TEOS) in the molar $Al_2O_3/SiO_2$=3/2. Sol-gel method by partial hydrolysis technique, as it were, first, TEOS was partially hydrolysized and then mixed with Al-secbutoxide for complete hydrolysis was used. X-ray diffraction, infrared spectroscopy and transmission electron microscopy, etc. confirmed that the mullite powder prepared by this method is in the stoichiometric $Al_2O_3/SiO_2$ ratio. Al-Si spinel was formed at $980^{\circ}C$ and ultrafine mullite powder with about 20 nm particle size was obtained above $1,200^{\circ}C$. Also mullite powders calcined at $1,600^{\circ}C$ had a stoichiometric composition, $3Al_2O_3{\cdot}2SiO_2$ and the lattice constants of the mullite powders calcined above $1,200^{\circ}C$ were almost coincided with theoretical values.

• Journal of the Korean Ceramic Society
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• v.33 no.12
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• pp.1301-1310
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• 1996

Generally it requires high sintering temperatures more than 135$0^{\circ}C$ to make semiconductive BaTiO3 ceramics. Also it is very difficult to achieve a homogeneous mixing in solid-state reaction method. Therefore the liquid phase distributed to non-uniform dilute the characteristics of PTCR. In order to improve the uniformity this study is used the sol-gel coating method. Using this method we studied the new manufacturing process that had a high reproducibility and mass production capability. Tetraethyl orthosilicate (TEOS) was used as a source of Si. The semiconductive BaTiO3 ceramics which was produced by sol-gel method for the SiO2 addition and sintered between 124$0^{\circ}C$ and 130$0^{\circ}C$ showed almost same resistivity at room temperature among 125$0^{\circ}C$ and 130$0^{\circ}C$. As the results We could be sintered the semiconducting BaTiO3 ceramics at lower temperature even at 125$0^{\circ}C$ maintaining the same specific resistivity ratio ($\rho$max/$\rho$min) at 130$0^{\circ}C$. The specific resistivity both below and above the Curie temperature were increased by slow cooling and the steepness of the plots in the reasion of transition from low to high resistance increased as the cooling rate decreased.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.241-241
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• 2003

실리카 나노 분말의 제조공정과 얻어진 나노분말의 자기조립 현상에 대하여 연구하였다. 나노분말은 TEOS(Tetraethylorthosilicate)를 이용하여 Stober process로 단분산 콜로이드 SiO2를 제조하였다. 다양한 응용을 위해서 좁은 입도분포를 가지면서도 다양한 크기를 가지는 분말을 제조하고자 TEOS, NH4OH, 에탄올, 증류수 등의 절대량과 몰비를 변화시키면서 나노분말을 제조하였다. 실험조건에 대한 입도분포와 평균 입자크기의 변화는 핵생성 이론으로 설명될 수 있었다. 얻어진 나노분말을 이용하여 dipcoating과 electron plating방법으로 단층 혹은 여러층의 박막을 형성하였다. 자기배열에 기초한 두 가지 증착방법에서 박막층에 미치는 변수들의 영향을 주로 electorn plating 방법에 대하여 고찰하였다.

• Journal of the Mineralogical Society of Korea
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• v.21 no.3
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• pp.283-287
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• 2008

The imogolite synthesis wore performed by using tetraethoxysilane (TEOS) and aluminium-sec-butoxide (ASB) at < $100^{\circ}C$. A mixure of TEOS and ASB in a molar ratio of 1:2 was prepared under vigorous stirring and the experiments were performed under the hydrothemal refluxing condition. When the concentration of TEOS and ASB in solution was 0.5 M, a well-crystallized imogolite was synthesized, and the reflections wore shown at d = 22.4, $9.5\;\AA$ etc., after XRD analysis. DTA analysis shows 2 exothemal peaks at 68 and $249^{\circ}C$, suggesting the dehydration and the dehyroxylation reaction, respectively. The result of TG indicates 41% weight loss. And the weak and unsymmetrical peaks by the Si-O-Al stretching vibrations at 953 and $993cm^{-1}$ and by O-Si-O bending vibration at $562cm^{-1}$ were observed after IR analysis. The synthetic imogolite was fibrous and shows a spiders web like network structure.

• Journal of the Korean Ceramic Society
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• v.29 no.5
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• pp.357-366
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• 1992

Residual organics were considered as impurity in Sol-Gel method. The purpose of this study was to find the conditions to contain as much residual organics as possible in silica gel prepared from TEOS(tetraethylortho-silicate) by Sol-Gel method. Residual organics are to be expected to have reduction effect on synthesizing Si3N4 from silica gel. The results of this study are follows: 1) The maximum content of entrapped carbon was 19.8 wt.%(C/SiO2=0.25 wt.ratio) in silica gel synthesized under the conditions 1.5 fold mole water for incomplete hydrolysis, 2.5 fold mole phenol as a solvent and 0.1 fold mole HCl as a catalyst to TEOS. 2) Silica gel with organics entrapped by Sol-Gel method had a positive effect on the formation of Si3N4 compared with commercial silica gel. 3) Sintered body of synthesized $\alpha$-Si3N4 with Y2O3 and Al2O3 as additives at 175$0^{\circ}C$ in N2 atmosphere showed bending strength, 602$\pm$20 MPa and frature toughness 4.45$\pm$0.15 MPa.m1/2.

• Polymer(Korea)
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• v.25 no.6
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• pp.866-875
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• 2001

In this work, thermal decomposition mechanism based on kinetic parameters and thermal stability of carbon fiber-reinforced carbon matrix composites (C/C composites), have been studied under high temperature oxidative conditions with addition of tetra-ethylorthosilicate (TEOS) as an oxidation inhibitor. Thermogravimetric analysis (TGA) was executed to evaluate the thermal decomposition mechanism and thermal stability of C/C composites in the temperature range of 30 ～ $850^{\circ}C$. As a result, the kinetic parameters of the composites impregnated with TEOS, i.e., activation energy for thermal decomposition ($E_d$), order of reaction (n) , and pre-exponential factor (A) were evaluated as 136 kJ/mol, 0, and 2.3$\times$$10^9s^{-1}$, respectively. Especially, the IPDT and $E_d$ of C/C composites impregnated with TEOS were improved largely compared with the composites impregnated without TEOS, due to the formation of $SiO_2$ on composite surfaces, resulting in interrupting the oxygen attack to carbon active site in the composites.

• Journal of Ceramic Processing Research
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• v.13 no.spc2
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• pp.373-376
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• 2012

Thin films of Ag-SiO2-TiO2 composite oxides with SiO2/TiO2 of 20/80 molar compositions were prepared by the sol-gel method, using tetraethylorthosilicate (TEOS) and titanium isopropoxide (TIP) as precursors. Ag-SiO2-TiO2 films coated on commercial glass substrates have successfully been synthesized using sol-gel method. The Ag-SiO2-TiO2 film with 0.5% Ag-added concentration and 20 mol% SiO2-mixture gives optimal results on crystalline structure, optical property, surface area, and photochromic property. Absorption near the wavelength of the incident light decreased gradually. The reversibility of the two-photon writing process in Ag-SiO2-TiO2 film is clearly seen.

• Journal of the Korean Chemical Society
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• v.58 no.1
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• pp.100-104
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• 2014

Magnetite nanoparticles were prepared by co-precipitation method and then silica was coated onto the surface of $Fe_3O_4$ by hydrolysis of TEOS. The silica coated magnetite nanoparticles were characterized for its structural, microstructural, optical, vibrational and magnetic properties by X-ray diffraction analysis, Scanning electron microscopy, UV-visible spectroscopy, Infrared spectroscopy and Vibration sample magnetometer, respectively. XRD study confirmed the presence of $SiO_2$ on the surface of magnetite nanoparticles. SEM study indicated that with increase in TEOS content the particles become bigger and mono-disperse. It was also found that the silica coating prevents magnetic particles from aggregation and imparts excellent stability.

• Journal of the Korean Ceramic Society
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• v.30 no.11
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• pp.897-904
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• 1993

CdS doped SiO2 glass coating films which are good candidates for the nonlinear optical materials were prepared by the Sol-Gel method. TEOS, C2H5OH, H2O and HCl were used as starting materials to obtain SiO2 matrix solutions. Then Cd(NO3)2.2H2O and CS(NH2)2 were dissolved into the SiO2 matrix solutions. Coating was performed several times in order to increase the thickness of coated film by the dip-coating method. Then heat treatments were carried out to control the size of CdS microcrystals doped in SiO2 glass matrix with respect to temperatures and times. CdS-doped SiO2 transparent coating films were successfully obtained. CdS crystals were changed from cubic to hexagonal type about $600^{\circ}C$.