• 한국진공학회:학술대회논문집
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• 한국진공학회 1995년도 제8회 학술발표회 논문개요집
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• pp.67-67
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• 1995

• 한국진공학회:학술대회논문집
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• 한국진공학회 1993년도 제5회 학술발표회 논문개요집
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• pp.93-94
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• 1993

• 한국재료학회:학술대회논문집
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• 한국재료학회 1994년도 춘계 학술발표 강연 및 논문 개요집
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• pp.46-47
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• 1994

• 한국전기전자재료학회논문지
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• 제23권6호
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• pp.502-507
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• 2010

In order to design nano structured materials with enhanced thermoelectric properties, the alloys in the pseudo-binary $Bi_2Te_3$-PbTe system are investigated for their micro structure properties. For this synthesis, the liquid alloys are cooled by the water quenching method. Micro structure images are obtained by using an electron probe micro analyzer(EPMA). Dendritic and lamellar structures are clearly observed with the variation in the composition ratio between $Bi_2Te_3$ and PbTe. The increase in the $Bi_2Te_3$ composition ratio causes to change of the structure from dendritic to lamellar. The Seebeck coefficient of sample 5, in which the mixture rate of $Bi_2Te_3$ is 83%, is measured as the highest value. In contrast, the others decrease with the increase of the $Bi_2Te_3$ composition ratio. Meanwhile, p-type characteristics are observed in sample 6, at 91%-$Bi_2Te_3$ mixture rate. The power factors of the all samples are calculated with the Seebeck coefficient and resistivity.

• 한국정보통신학회논문지
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• 제15권6호
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• pp.1349-1354
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• 2011

본 연구에서는 CdZnS와 CdTe로 구성되는 이종접합 소자를 제작하고 커패시턴스-전압 특성을 조사하였다. CdS/CdTe 접합의 경우, 역방향 바이어스가 증가함에 따라 공핍층의 폭이 커져 커패시턴스 값이 약간 감소하였으나 CdZnS/CdTe 접합에서는 CdTe 박막 내에서의 공핍층 폭이 바이어스에 크게 영향을 받지 않아 커패시턴스 값이 역방향 바이어스에 따라 거의 변화가 없었다. 바이어스 전압을 인가하지 않은 상태에서의 공핍층 폭은 높은 CdZnS 박막의 비저항 및 낮은 캐리어 농도로 인해 CdS/CdTe 접합보다 CdZnS/CdTe 접합에서 보다 큰 값을 나타내었다. CdZnS/CdTe 태양전지의 개방전압은 Zn의 비율이 커짐에 따라 CdZnS 박막과 CdTe 박막의 전자 친화력 차이의 감소로 인하여 크게 증가하였으나, Zn 비율이 0.35 이상인 경우 오히려 감소함을 알 수 있었다. 또한 CdZnS 박막의 높은 비저항이 태양전지의 직렬저항을 상승시켜 전지의 변환 효율은 오히려 감소함을 알 수 있었다.

• 태양에너지
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• 제11권3호
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• pp.74-83
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• 1991

본 논문은 substrate의 온도를 $200{\pm}1^{\circ}C$ 정도로 유지하며 진공저항 가열 증착법을 이용하여 (p)ZnTe/(n)Si 태양전지와 (n)CdS-(p)ZnTe/(n)Si 복접합 박막을 제작한 후 그 전기적 특성을 조사, 비교하였다. 제작한 (p)ZnTe/(n)Si 태양전지와(n)CdS-(p)ZnTe/(n)Si 복접합 박막에 대하여 $100[mW/cm^2]$의 광조사 하에서 특성을 조사한바 다음과 같은 결과를 얻었다. 단략전류$[mA/cm^2]$ (p)ZnTe/(n)Si:28 (n)CdS-(p)ZnTe/(n)Si:6.5 개방전압[mV] (p)ZnTe/(n)Si:450 (n)CdS-(p)ZnTe/(n)Si:250 충실도, FF (p)ZnTe/(n)Si:0.65 (n)CdS-(p)ZnTe/(n)Si:0.27 변환효율[%] (p)ZnTe/(n)Si:8.19 (n)CdS-(p)ZnTe/(n)Si:2.3 제작된 박막은 열처리에 의해 성능이 향상되지만 (p)ZnTe/(n)Si 태양전지는 약 $470^{\circ}C$ 이상의 온도와 15분 이상의 열처리 시간에서 그리고 (n)CdS-(p)ZnTe/(n)Si 복접합 박막은 약 $580^{\circ}C$ 이상의 온도와 15분 이상의 열처리 시간에서는 박막의 각종 구조결함으로 인한 감소현상을 나타내었다. 열처리 온도의 증가에 따라 박막의 표면저항은 감소하였다.

• 전기의세계
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• 제21권1호
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• pp.17-21
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• 1972

Electrical resistivity and switching phenomena in glass semiconductor of AsTe and AsTeGa is studied. Samples sliced from ingot which is air quenched or water quenched, show high resistivity at room temperature. The resistivity of the AsTe and AsTeGa is 1*10$^{6}$ .ohm.-cm and 5*10$^{6}$ .ohm.-cm at 27.deg. C. Switching phenomena take place in thin the thick samples. Holding voltage is different with the thickness of the samples and the characteristics of switching in the thin and thick samhles are similar. When square wave pulse voltage is applied, delay time is detected to 5.mu.sec by oscilloscpoe.

• 대한수의학회지
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• 제44권2호
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• pp.217-224
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• 2004

This study was carried out to investigate the antibiotic resistance pattern of Listeria spp. and Staphylococcus aureus. A total of 17 (14.8%) L. monocytogenes, 13 (11.3%) L. innocua, 7 (7%) L. welshimeri, and 83 (72.2%) S. aureus were isolated from commercial poultry carcasses in Seoul and Kyonggi province during the period between 2001 and 2003. Antibiotic susceptibility test of all Listeria strains isolated was performed by the disk agar diffusion method. Antibiotics used in the study were as follows; Amikacin (An), Ampicillin (Am), Cephalothin (Cf), Chloramphenicol (C), Ciprofloxacin (Cip), Erythromycin (E), Gentamicin (Gm), Imipenem (Ipm), Kanamycin (K), Minocycline (Mi), Neomycin (N), Norfloxacin (Nor), Ofloxacin (Ofx), Penicillin (P), Streptomycin (S), Tetracycline (Te), Tobramycin (Nn), Trimethoprim (Tmp), Trimethoprim/Sulfamethoxazloe (Sxt), and Vancomycin (Va). The antibiotic resistance pattern of S. aureus isolates was performed by the disk agar diffusion method. For the latter program, antibiotics used to the study were as follows; Cf, C, Cip, Clindamycin (Cc), E, Gm, Ipm, Nafcillin (Nf), Oxacillin (Ox), P, Te, Sxt, and Va. Of the 17 L. monocytogenes isolates, 94.1% were resistant to Te, 88.2% to Mi, 11.8% to Nor, 11.8% to S, 5.9% to Cip, and 5.9% to C. Of 13 L. innocua, 53.8% were resistant to Te, 23.1% to Mi, 23.1% to S, 7.7% to Cip, and 7.7% to Nor. Of 7 L. welshimeri, 57.1% were resistant to Te, and 14.3% to Am. Of 83 S. aureus, 100% were resistant to Te, 86.7% to Gm, 34.9% to P, 15.7% to Cip, 12% to Cc, 9.6% to E. The multiple antibiotic resistance patterns of L. monocytogenes isolates were observed in Te Mi Cip (5.9%), Te Mi Nor (5.9%), Te Mi (76.5%), and Te Nor (5.9%). Multiple antibiotic resistance was also found in L. innocua isolates. Resistant to Te Mi S Cip Nor was 7.7%, Te Mi S (7.7%), Te Mi (7.7%), and was 7.7% to Te S. Antibiotic resistance patterns for S. aureus isolats were demonstrated to Te Gm P Cip Cc E (6.0%), Te Gm Cip Cc E (3.6%), Te Gm P Cc (1.2%), Te Gm P (15.6%), Te Gm Cip (2.4%), Te P Cip (2.4%), Te Gm Cc (1.2%), Te Gm (56.6%), Te P (9.6%), and to Te Cip (1.2%). The results of this study suggest a high incidence of Lsteria spp. and S. aureus on poultry carcasses. The contaminated poultry carcasses may be a potential vehicle for foodborne infections due to multiple antimicrobial resistant organisms.

• 한국표면공학회지
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• 제29권5호
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• pp.325-329
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• 1996

We report on p-type arsenic doping of metalorganic vapor phase epitaxially (MOVPE) grown HgCdTe on (100) GaAs. HgCdTe was grown at $370^{\circ}C$ in a horizontal reactor with using dimethy-cadmium, diisoprophyltelluride, and elemental Hg. We used tris-dimethylaminoarsenic (DMAAs) as the metalorganic for p-doping. 4micron thick CdTe and subsequently 10micron thick HgCdTe were grown on (100) GaAs substrate. Interdiffused multilayer process in which thin CdTe and HgTe layers are grown alternately and interdiffused to obtain homogeneous HgCdTe alloys was used. Arsenic was doped during CdTe growth cycle. After growth HgCdTe was annealed at $415^{\circ}C$ for 15 min and then annealed again at $220^{\circ}C$ for 3 hr, both with Hg-saturate condition. We could obtain p-doping from 2.5$\times$$10^{16}$ to 6.6$\times$$10^{17}$$cm^{-3}$, depending on the DMAAs partial pressure. With the dual Hg-annealing, activation of arsenic was aboutt 90%, which was confirmed by SIMS measurement. With only low temperature annealing at $220^{\circ}C$ for 3hr, activation efficiency was about 50%.

• Current Optics and Photonics
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• 제2권6호
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• pp.589-594
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• 2018

We have investigated the dimensional nature of center-of-mass exciton confinement states in a CdMnTe/CdTe/CdMnTe heterostructure, where the CdTe well is too wide (144 nm) to confine both electrons and holes but able to confine whole excitons in the center-of-mass coordinate. Fine multiple photoluminescence spectra with a few meV separation were observed at 6 K. From the thickness dependence of the transition rate, they were attributed to even numbered center-of-mass exciton confinement states (N = 2, 4, 6, ${\cdots}$, 18). Dimensionality of the center-of-mass exciton confinement states was also investigated in terms of temperature dependence of radiative decay time. At low temperatures (${\leq}12K$), we found that the ground state excitons are likely localized possibly due to the barrier interface fluctuation, resulting in a constant decay time (~350 ps). With increased temperature (${\geq}12K$), localized excitons are thermally released, giving rise to a linear temperature dependence of radiative decay time as an evidence of two-dimensional nature.