• 제목/요약/키워드: TE6

검색결과 882건 처리시간 0.024초

Hot Wall Epitaxy (HWE) 방법에 의한 CuGaTe$_2$ 단결정 박막 성장과 특성 (Growth and Characterization of CuGaTe$_2$ Sing1e Crystal Thin Films by Hot Wall Epitaxy)

  • 유상하;홍광준
    • 한국전기전자재료학회:학술대회논문집
    • /
    • 한국전기전자재료학회 2002년도 하계학술대회 논문집
    • /
    • pp.273-280
    • /
    • 2002
  • The stochiometric mix of evaporating materials for the CuGaTe$_2$ single crystal thin films was prepared from horizontal furnance. For extrapolation method of X-ray diffraction patterns for the CuGaTe$_2$ polycrystal, it was found tetragonal structure whose lattice constant a$\_$0/ and c$\_$0/ were 6.025 ${\AA}$ and 11.931 ${\AA}$, respectively. To obtain the single crystal thin films, CuGaTe$_2$ mixed crystal was deposited on throughly etched semi-insulator GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were 670 $^{\circ}C$ and 410 $^{\circ}C$ respective1y, and the thickness of the single crystal thin films is 2.1 $\mu\textrm{m}$. The crystalline structure of single crystalthin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). Hall effect on this sample was measured by the method of van der Pauw and studied on carrier density and mobility dependence on temperature. The carrier density and mobility of CuGaTe$_2$ single crystal thin films deduced from Hall data are 8.72${\times}$10$\^$23/㎥, 3.42${\times}$10$\^$-2/㎡/V$.$s at 293K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c - axis of the CuGaTe$_2$ single crystal thin film, we have found that the values of spin orbit coupling Δs.o and the crystal field splitting Δcr were 0.0791 eV and 0/2463eV at 10K, respectively. From the PL spectra at 10K, the peaks corresponding to free bound excitons and D-A pair and a broad emission band due to SA is identified. The binding energy of the free excitons are determined to be 0.0470eV and the dissipation energy of the donor -bound exciton and acceptor-bound exciton to be 0.0490eV, 0.00558eV, respectively.

  • PDF

Mn을 첨가한 ZnO-TeO2 세라믹스의 소결과 전기적 특성 (Sintering and Electrical Properties of Mn-doped ZnO-TeO2 Ceramics)

  • 홍연우;신효순;여동훈;김종희;김진호
    • 한국전기전자재료학회논문지
    • /
    • 제22권1호
    • /
    • pp.22-28
    • /
    • 2009
  • We investigated the sintering and electric properties of ZnO-1.0 at% $TeO_2$ (ZT1) and 1.0 at% Mn-doped ZT1(ZT1M1) system. $TeO_2$ itself melts at $732^{\circ}C$ in air but forms the $ZnTeO_3$ or $Zn_2Te_3O_8$ phase with ZnO as increasing temperature and therefore retards the densification of ZnO to $1000^{\circ}C$. In ZT1M1 system, also, the densification of ZnO was retarded up to $1000^{\circ}C$ and then reached > 90% of theoretical density above $1100^{\circ}C$. It was found that a good varistor characteristics(nonlinear coefficient $a{\sim}60$) were developed in ZT1M1 system sintered at $1100^{\circ}C$ due to Mn which known as improving the nonlinearity of ZnO varistors. The results of C-V characteristics such as barrier height (${\Phi}_b$), donor density ($N_D$), depletion layer (W), and interface state density ($N_t$) in ZT1M1 ceramics were $1.8{\times}10^{17}cm^{-3}$, 1.6 V, 93 nm, and $1.7{\times}10^{12}cm^{-2}$, respectively. Also we measured the resistance and capacitance of grain boundaries with temperature using impedance and electric modulus spectroscopy. It will be discussed about the stability and homogeneity of grain boundaries using distribution parameter ($\alpha$) simulated with the Z(T)"-logf plots.

Feasibility study of CdZnTe and CdZnTeSe based high energy X-ray detector using linear accelerator

  • Beomjun Park;Juyoung Ko;Jangwon Byun;Byungdo Park ;Man-Jong Lee ;Jeongho Kim
    • Nuclear Engineering and Technology
    • /
    • 제55권8호
    • /
    • pp.2797-2801
    • /
    • 2023
  • CdZnTeSe (CZTS) has attracted attention for applications in X- and gamma-ray detectors owing to its improved properties compared to those of CdZnTe (CZT). In this study, we grew and processed single crystals of CZT and CZTS using the Bridgeman method to confirm the feasibility of using a dosimeter for high-energy X-rays in radiotherapy. We evaluated their linearity and precision using the coefficient of determination (R2) and relative standard deviation (RSD). CZTS showed sufficient RSD values lower than 1.5% of the standard for X-ray dosimetry, whereas CZT's RSD values increased dramatically under some conditions. CZTS exhibited an R2 value of 0.9968 at 500 V/cm, whereas CZT has an R2 value of 0.9373 under the same conditions. The X-ray response of CZTS maintains its pulse shape at various dose rates, and its properties are improved by adding selenium to the CdTe matrix to lower the defect density and sub-grain boundaries. Thus, we validated that CZTS shows a better response than CZT to high-energy X-rays used for radiotherapy. Further, the applicability of an onboard imager, a high-energy X-ray (>6 MV) image, is presented. The proposed methodology and results can guide future advances in X-ray dose detection.

Tissue Expanders in Staged Calvarial Reconstruction: A Systematic Review

  • Andrea Y. Lo;Roy P. Yu;Anjali C. Raghuram;Michael N. Cooper;Holly J. Thompson;Charles Y. Liu;Alex K. Wong
    • Archives of Plastic Surgery
    • /
    • 제49권6호
    • /
    • pp.729-739
    • /
    • 2022
  • Cranioplasties are common procedures in plastic surgery. The use of tissue expansion (TE) in staged cranioplasties is less common. We present two cases of cranioplasties with TE and systematically review literature describing the use of TE in staged cranioplasties and postoperative outcomes. A systematic review was performed by querying multiple databases. Eligible articles include published case series, retrospective reviews, and systematic reviews that described use of TE for staged bony cranioplasty. Data regarding study size, patient demographics, preoperative characteristics, staged procedure characteristics, and postoperative outcomes were collected. Of 755 identified publications, 26 met inclusion criteria. 85 patients underwent a staged cranioplasty with TE. Average defect size was 122 cm2, and 30.9% of patients received a previous reconstruction. Average expansion period was 14.2 weeks. The most common soft tissue closures were performed with skin expansion only (75.3%), free/pedicled flap (20.1%), and skin graft (4.7%). The mean postoperative follow-up time was 23.9 months. Overall infection and local complication rates were 3.53 and 9.41%, respectively. The most common complications were cerebrospinal fluid leak (7.1%), hematoma (7.1%), implant exposure (3.5%), and infection (3.5%). Factors associated with higher complication rates include the following: use of alloplastic calvarial implants and defects of congenital etiology (p = 0.023 and 0.035, respectively). This is the first comprehensive review to describe current practices and outcomes in staged cranioplasty with TE. Adequate soft tissue coverage contributes to successful cranioplasties and TE can play a safe and effective role in selected cases.

Hot wall epitaxy(HWE) 방법에 의한 CuGaTe$_2$단결정 박막 성장과 특성에 관한 연구 (The study of growth and characterization of CuGaTe$_2$single crystal thin films by hot wall epitaxy)

  • 홍광준;이관교;이상열;유상하;정준우;정경아;백형원;방진주;신영진
    • 한국결정성장학회지
    • /
    • 제10권6호
    • /
    • pp.425-433
    • /
    • 2000
  • 수평 전기로에서 $CuGaTe_2$다결정을 합성하여 HWE 방법으로 $CuGaTe_2$단결정 박막을 반절연성 GaAs (100) 위에 성장하였다. $CuGaTe_2$단결정 박막은 증발원과 기판의 온도를 각각 $670^{\circ}C$, $410^{\circ}C$로 성장하였다. 이때 단결정 박막의 결정성이 10K에서 측정한 광발광 스펙트럼은 954.5 nm(1.2989 eV) 근처에서 exciton emission 스펙트럼이 가장 강하게 나타났으며, 또한 이중결정 X-선 요동곡선(DCRC)의 반폭치(FWHM)도 139arcsec로 가장 작게 측정되어 최적 성장 조건임을 알 수 있었다. Hall효과는 van der Pauw 방법에 의해 측정되었으며, 온도에 의존하는 운반자 농도와 이동도는 293 K에서 각각 $8.72{\times}10{23}$$\textrm m^3$, $3.42{\times}10^{-2}$ $\textrm m^2$/V.s였다. 상온에서 $CuGaTe_2$단결정 박막의 광흡수 특성으로부터 에너지 띠간격이 1.22 eV였다. Bandedge에 해당하는 광전도도 peak의 온도 의존성은 varshni 관계식으로 설명되었으며, varshni 관계식의 상수값은 $E_g$(0) = 1.3982 eV, $\alpha$ = $4.27{\times}10^{-4}$eV/K, $\beta$ = 265.5K로 주어졌다. $CuGaTe_2$단결정 박막의 광전류 단파장대 봉우리들로부터 10K에서 측정된$\Delta$cr(crystal field splitting)은 0.0791 eV, $\Delta$s.o(spin orbit coupling)는 0.2463 eV였다. 10K에서 광발광 봉우리의 919.8nm(1.3479 eV) free exciton($E_x$), 954.5nm(1.2989 eV)는 donor-bound exciton 인 $I_2(D^0,X)$와 959.5nm(1.2921 eV)는 acceptor-bound exciton 인 $I_1(A_0, X)$이고, 964.6nm(1.2853 eV)는 donor-acceptor pair(DAP) 발광, 1341.9nm(0.9239 eV)는 self activated(SA)에 기인하는 광발광 봉우리로 고찰되었다.

  • PDF

외상 후 스트레스 장애의 위험요인으로서의 사상체질 (Sasang Constitution May Act as a Risk Factor for Post Traumatic Stress Disorder)

  • 김윤영;김태열;박소영;장은수
    • 사상체질의학회지
    • /
    • 제32권1호
    • /
    • pp.22-29
    • /
    • 2020
  • In this study, we suggested indirect evidence of whether Sasang constitution(SC) could be a risk factor for Post-traumatic stress disorder(PTSD) among soldiers who participated in Vietnam war. The number of 199 subjects joined this study. We surveyed SC with KS-15 and PTSD with Korean Version of Impact of Event Scale-Revised questionnaires. A Chi-square test and a one-way ANOVA were performed according to SC type, and multiple logistic regression was used to produce odds ratios(ORs). Significant p was .05. The number(rate) of Taeeumin(TE), Soeumin(SE), and Soyangin(SY) types were 131(65.8%), 33(16.6%), and 35(17.6%) respectively. The score of PTSD in SE type(8.78±8.61) was significantly higher than those of SY(4.00±6.5) and TE types(3.65±6.78)(p=.001, SE>TE, SY, Scheffe). SE type was associated with increased PTSD prevalence compared with TE [OR 4.338; 95% CI 1.525-12.335, p<.01], and it was still associated with increased PTSD prevalence [OR 10.658; 95% CI 1.296-87.661, p<.05] after adjusting for age and weight. This study suggests that SC, particularly the SE type, might be significantly associated with PTSD and could be considered as a risk factor for PTSD.

N형 $Bi_2Te_{2.4}Se_{0.6}$ 박막의 열전 특성에 미치는 두께 및 열처리 효과 (Thickness and Annealing Effects on the Thermoelectric Properties of N-type $Bi_2Te_{2.4}Se_{0.6}$ Thin Films)

  • 김일호;장경욱
    • 한국진공학회지
    • /
    • 제14권3호
    • /
    • pp.153-158
    • /
    • 2005
  • 순간 증착법으로 제조한 n형 $Bi_2Te_{2.4}Se_{0.6}$ 박막에 대하여 유효 평균 자유 행로 모델을 적용하여 박막의 두께가 열전 특성에 영향을 미치지 않는 임계 두께를 구하였다. 또한 열처리 전후 전자 농도 및 이동도의 변화를 조사하여 열처리에 의한 열전 특성의 변화를 역구조 결함과 관련하여 설명하였다. Seebeck 계수와 전기 비저항 모두 두레의 역수와 직선적인 관계를 보였으며, 이로부터 구한 평균 자유 행로는 $5120\AA$이었다. 열처리에 의해 전자의 이동도가 증가하였지만, 역구조 결함의 감소로 인해 운반자의 전자 농도가 현저히 감소하여, 결국 전기전도도가 감소하고 Seebeck 계수가 증가하였다 473k에서 1시간 동안 열처리한 Seebeck 계수와 전기전도도는 각각 $-200\;\mu V/k$$510\omega^{-1}cm^{-1}$이었다 또한, 열처리에 의해 열전 성능 인자가 상당히 향상되어 $20\times10^{-4}\;W/(mK^2)$를 나타내었다.

PBB-TE 기반의 패킷전송시스템에서 멀티캐스트 서비스와 계층적 QoS 구현 (Point-to-Multipoint Services and Hierarchical QoS on PBB-TE System)

  • 이원경;최창호;김선미
    • 한국통신학회논문지
    • /
    • 제37권6B호
    • /
    • pp.433-442
    • /
    • 2012
  • We have proposed a solution to multicast services and an advanced quality of service (QoS) mechanism on a packet transport system (PTS) based on PBB-TE. The point-to-multipoint (PtMP) connection in the PBB-TE system have been realized by grouping point-to-point (PtP) PTL trunks and mapping a BSI onto the PtP PTL trunks using a multicast backbone destination address. To provide end-to-end QoS of the PtMP services, the hierarchical QoS scheme for backbone service instances and connection-oriented paths has been implemented in the PTS. For providing different capabilities for service selection and priority selection, the PTS offers to customers three basic types of the port-based, C-tagged, and S-tagged service interface defined by the IEEE 802.1ah. To offer to customers different capabilities of the layer 3 applications and services, moreover, an IP-flow service interface have been added. In order to evaluate traffic performance for PtMP services in the PTS, the PtMP throughputs for the link capacity of 1 Gbps at the four service interfaces were measured in the leaves of the ingress edge node, the transit node, and the egress edge node. The throughputs were about 96 % because the B-MAC overhead of 22 bytes occupies 4% of the 512-byte packet. The QoS performance is ability to guarantee an application or a user a required bandwidth, and could be evaluated by the accuracy of policing or shaping. The accuracy of the policing scheme and the accuracy of the shaping scheme were 99% and 99.3% respectively.

Using Local Flaps in a Chest Wall Reconstruction after Mastectomy for Locally Advanced Breast Cancer

  • Park, Joo Seok;Ahn, Sei Hyun;Son, Byung Ho;Kim, Eun Key
    • Archives of Plastic Surgery
    • /
    • 제42권3호
    • /
    • pp.288-294
    • /
    • 2015
  • Background Surgical ablation for locally advanced breast cancer results in large chest wall defects, which can then be managed with local flaps or skin grafts. The purpose of this article is to evaluate the outcomes of three types of local skin flaps. Methods Among 25 local flaps in 24 patients, 6 were bilateral advancement (BA) flaps, 9 were thoracoabdominal (TA) flaps, and 10 were thoracoepigastric (TE) flaps. Clinical outcomes were compared including complications, the need for a secondary surgical intervention, and the timing of adjuvant therapy. Results The mean defect size was $436.2cm^2$. Two patients with TA flaps and 6 patients with TE flaps developed distal flap necrosis, and skin grafts were needed to treat 2 patients with TE flaps. Radiation was administered to the BA, TA, and TE patients after average postoperative durations of 28, 30, or 41 days, respectively. The incidence of flap necrosis tended to be higher in TE patients, which lead to significant delays in adjuvant radiation therapy (P=0.02). Conclusions Three types of local skin flaps can be used to treat large chest wall defects after the excision of locally advanced breast cancer. Each flap has its own merits and demerits, and selecting flaps should be based on strict indications based on the dimensions and locations of the defects.

Sintering and Electrical Properties of Mn-doped ZnO-$TeO_2$ Ceramics

  • Hong, Youn-Woo;Baek, Seung-Kyoung;Hwang, Hyun-Suk;Shin, Hyo-Soon;Yeo, Dong-Hun;Kim, Jong-Hee
    • 한국전기전자재료학회:학술대회논문집
    • /
    • 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
    • /
    • pp.49-49
    • /
    • 2008
  • ZnO-based varistors have been widely used for voltage stabilization or transient surge suppression in electric power systems and electronic circuits. Recently, It has reported that the varistor behavior with nonlinear coefficient of 6~17 in Mn-doped ZnO. In this study we have chosen the composition of ZnO-$TeO_2-Mn_3O_4$ (ZTM) system to the purpose of whether varistor behavior appeared in doped ZnO by the solid state sintering or not. We investigated the sintering and electric properties of 0.5~3.0 at% Mn doped ZnO-1.0 at% $TeO_2$ system. Electrical properties, such as current-voltage (I-V), capacitance-voltage (C-V), and impedance spectroscopy were conducted. $TeO_2$ itself melts at $732^{\circ}C$ in air but forms the $ZnTeO_3$ phase with ZnO as increasing temperature and therefore retards the densification of ZnO to $1000^{\circ}C$. The average grain size of sintered samples was at about $3{\mu}m$ and decreased with increasing Mn contents. It was found that a good varistor characteristics were developed in ZTM system sintered at $1100^{\circ}C$ (nonlinear coefficient $\alpha$ ~ 60). The results of C-V characteristics such as barrier height ($\Theta$), donor density ($N_d$), depletion layer (W), and interface state density ($N_t$) in ZTM ceramics were $4\times10^{17}cm^{-3}$, 0.7 V, 40 nm, and $1.6\times10^{12}cm^{-2}$, respectively. It will be discussed about the stability and homogeneity of grain boundaries using distribution parameter ($\alpha$) simulated with the Z(T)"-logf plots in ZTM system.

  • PDF