• Journal of the Korean Vacuum Society
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• v.21 no.6
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• pp.348-353
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• 2012

We investigated chemical states of a $Sb_2Te_3$ thin film with the polycrystalline phase by using high-resolution x-ray photoelectron spectroscopy with synchrotron radiation. The $Sb_2Te_3$ thin film was formed by sputtering. The rhombohedral phase was confirmed by x-ray diffraction. To remove the surface oxide, we performed $Ne^+$ ion sputtering for 1 hour with the beam energy of 1 kV and post-annealing at $100^{\circ}C$ for 5 min in ultra-high vacuum. We obtained the Te and Sb 4d core-levels spectra with the peaks at the binding energies of 40.4 and 33.0 eV, respectively. The full-width of half maximum of both the Te and Sb $4d_{5/2}$ core-levels is 0.9 eV. The Te and Sb core-levels only show a single chemical state, and we also confirmed the stoichiometry of approximately 2 : 3.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.6 no.2
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• pp.220-228
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• 1996

CdTe single crystals were grown by vertical Bridgman method using double furnace with two siliconit heating elements. When the peak temperature of the upper furnace was fixed at $1150^{\circ}C$ and that of the lower furnace was $800^{\circ}C$, the temperature gradient was about $22.5^{\circ}C$/cm. The lattice constant $a_0$ was $6.482\AA$ from the X-ray diffraction and the band gap energy obtained from the optical absorption experiment at room temperature was 1.478 eV. PL spectrum showed that the bound exciton emission peak was resolved into ($A^0,X$) (1.5902, 1.5887 eV), ($h\;D^0$) (1.5918 eV) and ($D^0,X$ (1.5928, 1.5932 eV), and we have also calculated binding energy and ionization energy of the neutral donor and acceptor.

• Korean Journal of Optics and Photonics
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• v.8 no.6
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• pp.445-449
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• 1997

The complex refractive indices of $Ge_2Se_2Te_5$ which show reversible phase change between the crystalline phase and an amorphous one depending upon the annealing process have been determined in the spectral range of 0.7-4.5 eV. The $Ge_2Se_2Te_5$ films were DC sputter deposited on the crystalline silicon substrate. The spectro-ellipsometry data of a thick film were analyzed following the modelling procedure where the quantum mechanical dispersion relation were used for the complex refractive indices of both the cryastalline phase $Ge_2Se_2Te_5$ and and amorphous phase $Ge_2Se_2Te_5$, respectively. On the other hand, with the surface micro-roughness layer whose effective thickness was determined from AFM analysis, the spectro-ellipsometry data were numerically inverted to yield the complex refractive index of $Ge_2Se_2Te_5$ at each wavelength. With these set of complex refractive indices, the reflectance spectra were calculated and those spectra obtained from the numerical inversion showed better agreement with the experimental reflection spectra for both the cryastalline phase and an amorphous phase. Finally, the thin $Ge_2Se_2Te_5$ film which has the optimum thickness of 26 nm as the medium for optical recording was also analyzed and the quantitative result of the film thickness and the surface microroughness has been reported.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.62-62
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• 2000

비접촉식 온도센서는 물체에서 방출하는 적외선 등의 복사신호를 열에너지로 전환하고 이를 다시 전기신호로 2차 에너지 변환하여 온도를 감지하는 센서로 인체 검지를 응용한 다양한 상품 및 교통, 방재, 빌딩 시스템 등의 분야에 널리 응용되고 있다. 비접촉식 적외선 센서는 열에너지를 전기에너지로 변환하는 방법에 따라 양자형과 열형으로 구분되며, 이중 양자형은 광전도나 광기전력 효과 등을 이용하여 감도 및 응답성이 우수하다는 장점을 지니고 있지만, 소자부를 80K 이하 온도로 유지시키는 냉각을 필요로 하므로 대형 제작이 불가피하고 그 용도가 제한적이다. 열형은 냉각이 필요 없고 소형으로 제작가능한 장점을 지니고 있어 써모 파일이나 초전체를 이용한 번용 센서가 보급되고 있다. 그러나 써모파일의 경우 출력되는 전기 신호가 미약하여 감도 및 응답성을 향상하기 위해 구조가 복잡하고, 특히 모터초퍼나 저항을 전압으로 변환시키는 전력기 등이 필요로 하는 단점을 지니고 있다. 따라서 이러한 문제점을 보완하기 위해 열전재료 박막을 이용한 적외선 센서를 개발하려는 노력이 진행중에 있다. 열전박막을 이용한 적외선 센서는 열전재료의 Seebeck 현상을 이용하여 열에너지에서 전기에너지의 변환이 자가발전으로 이루어져 offset과 외부 바이어스를 필요로 하지 않는다. 또한 작은 온도 변화에도 그 감도와 응답성이 높고, 출력신호가 커서 증폭기 등이 불필요한 장점을 지니고 있다. 특히 초전형 센서가 상온에서도 기판에 대한 열 확산을 제어해야 하는 문제점을 갖는 반면, 열전박막형 적외선 센서는 고온에서도 안정된 출력 신호를 얻을 수 있어 그 활용 온도 범위가 크게 확대될 것으로 기대된다. 본 실험에서는 우수한 열전특성을 갖는 (Bi1-xSbx)2Te3 박막을 얻기 위해 열팽창계수가 작고 알칼리 원소가 0.3% 이하로 포함되어 있는 corning glass(# 7059)를 기판으로 사용하였다. 또한 최적의 열전특성을 나타내는 조성을 실험적으로 구하기 위해 (Bi0.2Sbx)2Te3 조성의 합금 타？ 위에 Bi2Te3 및 Sb2Te3 chip을 올려놓고 그 면적을 변화시켜 다양한 조성의 열전박막을 증착하였다. 열전박막의 증착시 산화와 오염에 의한 열전특성 변화를 최소화하기 위해 초기진공도를 1$\times$10-6 Torr로 하였으며, Ar 가스를 흘려주어 2$\times$102 Torr 의 증착진공도를 유지하였다. 열전박막을 증착하기 전에 기판을 10분간 200W의 출력으로 RF 처리하였으며, 30$0^{\circ}C$에서 33 /sec의 속도로 (Bi1-xSbx)2Te3 박막을 증착하였다. 이와 같이 제조된 (Bi1-xSbx)2Te3 박막의 미세구조를 SEM으로 관찰하고 EDS로 조성을 분석하였으며, XRD를 이용하여 결정성을 관찰하였다. 또한 (Bi1-xSbx)2Te3 박막의 Seebeeck 계수 및 전기비저항을 측정하고 증착된 박막조성, 결정상, 미세구조와 열전특성간의 상관관계를 고찰하였다.

• Journal of Sasang Constitutional Medicine
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• v.25 no.3
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• pp.180-194
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• 2013

Objectives Impaired lung function(ILF) and sasang constitution(SC) is associated with metabolic syndrome(MS). However, the relationship between ILF and SC is unclear. So, we assessed the relationship between ILF and MS according to SC, and examined whether SC is an independent risk factor for ILF. Methods This study included 1,148 subjects 40years and older who were performed the health examination at Kyung Hee University Hospital in Korea between December 2011 and February 2013. We defined ILF if FVC or $FEV_1$ value were less than lower limit of normal(LLN), and classified ventilatory patterns as obstructive pattern and restrictive pattern. MS was assessed according to AHA/NHLBI criteria. We used multivariate logistic regression to analyze the association of ILF with MS respective to SC types, and to identify the risk of SC types for ILF. Odds ratio(OR) was calculated by adjusting for age, sex, smoking status, drinking, physical activity, and BMI. Results In whole subjects, ILF was associated with MS [OR (95% CI), 1.69 (1.24-2.31) for FVC, 1.67 (1.20-2.33) for $FEV_1$]. And in Taeeum type(TE type) and Soeum type(SE type), ILF was associated with MS [1.63 (1.10-2.42) for FVC, 1.48 (1.01-2.24) for $FEV_1$ in TE type; 6.93 (1.14-42.00) for FVC in SE type], while in Soyang type(SY type), it wasn't. The restrictive pattern was associated with MS in TE type and SE type, while in SY type, it wasn't. Furthermore, TE type and SY type had more risk for ILF than SE type [1.71 (1.12-2.59) for SY type, 1.95 (1.23-3.08) for TE type in FVC; 2.06 (1.26-3.36) for TE type in $FEV_1$; 1.85 (1.21-2.85) for SY type, 2.17 (1.35-3.49) for TE type in Restrictive pattern]. Conclusions These results show that SC is an independent risk factor for ILF, especially TE type and SY type than SE type, and the prevalence of MS is an independent risk factor for ILF in TE type.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.13 no.3
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• pp.122-126
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• 2003

In this study, $Zn_{0.86}Mn_{0.14}$Te epilayer of 0.7 $\mu\textrm{m}$-thickness was grown on GaAs(100) substrate by using hot wallepitaxy. GaAs(100) substrate was removed from $Zn_{0.86}Mn_{0.14}$Teepilayer by the selective etching solution. The crystal structure and the lattice constant of only Z $n_{0.86}$ M $n_{0.14}$Te epilayer were investigated to be zincblende and 6.140 $\AA$ from X-ray diffraction pattern, respectively. Mn composition x of $Zn_{1-x}Mn_x$Te epilayer was found to be 0.14 using this lattice constant and Vegard's law. The crystal quality of the epilayer was confirmed to be very good due to 256 arcsec-full-width at half-maximum of the double crystal rocking curve. The absorption spectra from the transmission ones were obtained to measure the band gap energy of $Zn_{0.86}Mn_{0.14}$Te epilayer from 300 K to 10 K. With the decreasing temperature,. strong absorption regions in the absorption spectra were shifted to higher energy side and the absorption peak meaning the free exciton formation appeared near the absorption edge. The band gap energy values of $Zn_{0.86}Mn_{0.14}$Te epilayer at 0 K and 300 K were found to be almost 2.4947 eV and 2.330 eV from the temperature dependence of the free exciton peak position energy of $Zn_{0.86}Mn_{0.14}$Te epilayer, respectively. The free exciton peak position energy of $Zn_{0.86}Mn_{0.14}$Te epilayer without GaAs substrate was larger 15.4 meV than photoluminescence peak position energy at 10 K. This energy difference between two peaks was analysed to be Stokes shift.

• Bulletin of the Korean Chemical Society
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• v.16 no.6
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• pp.504-507
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• 1995

The reaction of Co2(CO)8 with 3,6-di-tert-butyl-1,2-benzoquinone in the presence of the respective 4,4'-chalcogenobispyridine results in the coordination polymers of [CoⅢ(4,4'-X(Py)2)(DBSQ)(DBCat)]n (X=S, Se, Te; Py=pyridine; DBSQ=3,6-di-tert-butylsemiquinone; DBCat=3,6-di-tert-butylcatechol). The title compounds undergo an intramolecular Cat → Co electron transfer, and thus change toward the [CoⅡ(4,4'-X(Py)2)(DBSQ)2]n at elevated temperature. The temperature-switching properties of the compounds directly depend upon the electronegativity of the chalcogen atom of the 4,4'-chalcogenobispyridine coligands. The spectroscopic data disclose that the properties of [CoⅢ(4,4'-S(Py)2)(DBSQ)(DBCat)]n and [CoⅢ(4,4'-Se(Py)2)(DBSQ)(DBCat)]n are similar each other in contrast to those of [CoⅢ(4,4'-Te(Py)2)(DBSQ)(DBCat)]n.

• Journal of Korean Academy of Nursing
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• v.36 no.6
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• pp.917-924
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• 2006

Purpose: This study was to examine the effects of electrical muscle stimulation therapy on chronic knee pain in the elderly. Method: The research design was a one-group pretest-posttest design. The subjects were 45 (TE: 17, SE: 15, SY: 13) elderly, 65 years old and above with chronic knee pain. Pain was measured by the S-F McGill Pain Questuionnaire (S-F MPQ) and Arthritis Impact Measurement Scale (AIMS). Electrical muscle stimulation therapy experimental treatment was applied for 12 weeks, 3 times/week, 15 min/time. Data was collected from March 2005 to February 2006. Data was analyzed using the SPSS PC+ 12 version. Results: After receiving electrical muscle stimulation therapy, chronic knee pain in TE (S-F MPQ: t=-62.143, p=.000, AIMS: t=-29.155, p=.000), SE (S-F MPQ: t=-76.345, p=.000, AIMS: t=-39.323, p=.000), and SY (S-F MPQ: t=-43.691, p=.000, AIMS: t=-30.306, p=.000) groups were significantly decreased. Conclusion: Electrical muscle stimulation therapy can be a better effective primary nursing intervention for chronic knee pain for community dwelling elderly people with TE, SE, and SY.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.22 no.6
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• pp.1251-1258
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• 1997

Generally, it is very important to study selective coupling between cavities of the filter structure using multimode cavity resonator. In this paper, we have manufactured 5-pole bandpass filter(BPF) using dual and triple-mode cavity resonator. To do so, we have derived the formulas for coupling coefficient about coupling between TE-modes from TM/TE-mode's tangential and lognitudinal field intensities each other. To implement the Chebyshev response, the intercabity slot combining dual-mode and triple-mode is designed to couple one H-field of TE-mode parallel to slot plate. In this paper, specially it is derived the formulas for T $E_{11p}$-mode from TE-modes, and determined after obtaining location and size of intercabity slot from the equation. In this ppaer, based on this result, we designed and implmented teh bandpass filter operated at the center frequency of 14.5GHz with a Chebyshev response. For the manufactured cavity filter, dual-mode and triple-mode cavity are resonted by two orthogonal T $E_{113}$-modes, and by two orthogonal T $E_{113}$-modes and one T $M_{012}$-mode, respecitively. The 2-stage 5-pole BPF proposed in this paper has the insertion loss of -2.32dB, the reflection loss of -15dB in the passband, and the out-or-rejection of -67dB.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.28A no.11
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• pp.866-873
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• 1991

In this paper the electric and magnetic field distributions in a TEM cell used for EMC testing are analyzed numerically. The fields are distorted with the increase of frequency. These distortions are due to higher order modes and resonances and cause the bandwidthe limitations in the uae of TEM cels. The upper frequency is lower modes however, are reflected at some points through the tapered ends of the cell. Higher order modes however, are reflected at some points within the tapered region where it becomes too small to support the modes, The first two TE mode(TE$_{01}$ and TE$_{10}$) cutoff frequencies and the first six TE$_mnp$ resonant ferquencies are identified in a TEM cell (1x0 6x2m,w=0.72m) from field patterns and the results are consistent with others' data. The circumferential wall currents to support resonances are shown. For the large cell it is desired to extend the usable frequency range above the cutoff frequency of the first higher order mode. This study proposes an attempt to expand the frequency bandwidth by a resonance suppression.