• Proceedings of the Korean Vacuum Society Conference
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• 1995.02a
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• pp.67-67
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• 1995

• Proceedings of the Korean Vacuum Society Conference
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• 1993.07a
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• pp.93-94
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• 1993

• Proceedings of the Materials Research Society of Korea Conference
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• 1994.05a
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• pp.46-47
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• 1994

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.6
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• pp.502-507
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• 2010

In order to design nano structured materials with enhanced thermoelectric properties, the alloys in the pseudo-binary $Bi_2Te_3$-PbTe system are investigated for their micro structure properties. For this synthesis, the liquid alloys are cooled by the water quenching method. Micro structure images are obtained by using an electron probe micro analyzer(EPMA). Dendritic and lamellar structures are clearly observed with the variation in the composition ratio between $Bi_2Te_3$ and PbTe. The increase in the $Bi_2Te_3$ composition ratio causes to change of the structure from dendritic to lamellar. The Seebeck coefficient of sample 5, in which the mixture rate of $Bi_2Te_3$ is 83%, is measured as the highest value. In contrast, the others decrease with the increase of the $Bi_2Te_3$ composition ratio. Meanwhile, p-type characteristics are observed in sample 6, at 91%-$Bi_2Te_3$ mixture rate. The power factors of the all samples are calculated with the Seebeck coefficient and resistivity.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.15 no.6
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• pp.1349-1354
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• 2011

In this work, we fabricated the CdZnS/CdTe heterojunction and investigated the C-V characteristics to determine the depletion width and the charge density distribution. A parallel experiment on CdS/CdTe heterojunction was also carried out for comparison. The depletion region width, for CdZnS/CdTe heterojunction, was nearly constant, regardless of bias voltage. However, the depletion region was wider than that of CdS/CdTe heterojunction due to high resistivity of CdZnS film. The interface charge density of CdZnS/CdTe heterojunction was increased linearly with the bias voltage and showed lower values than those for CdS/CdTe junction. The open circuit voltage of CdZnS/CdTe heterojunction solar cells increased with zinc mole ratio due to reducing of the electron affinity difference between CdZnS and CdTe films. However, the increase of series resistance due to the high resistivity of Cd1-xZnxS films results in reducing conversion efficiency.

• Solar Energy
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• v.11 no.3
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• pp.74-83
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• 1991

In this study, the (p)ZnTe/(n)Si solar cell and (n)CdS-(p)ZnTe/(n)Si poly-junction thin film are fabricated by vaccum deposition method at the substrate temperature of $200{\pm}1^{\circ}C$ and then their electrical properties are investigated and compared each other. The test results from the (p)ZnTe/(n)Si solar cell the (n)CdS-(p)ZnTe/(n)Si poly-junction thin fiim under the irradiation of solar energy $100[mW/cm^2]$ are as follows; Short circuit current$[mA/cm^2]$ (p)ZnTe/(n)Si:28 (n)CdS-(p)ZnTe/(n)Si:6.5 Open circuit voltage[mV] (p)ZnTe/(n)Si:450 (n)CdS-(p)ZnTe/(n)Si:250 Fill factor (p)ZnTe/(n)Si:0.65 (n)CdS-(p)ZnTe/(n)Si:0.27 Efficiency[%] (p)ZnTe/(n)Si:8.19 (n)CdS-(p)ZnTe/(n)Si:2.3 The thin film characteristics can be improved by annealing. But the (p)ZnTe/(n)Si solar cell are deteriorated at temperatures above $470^{\circ}C$ for annealing time longer than 15[min] and the (n)CdS-(p)ZnTe/(n)Si thin film are deteriorated at temperature about $580^{\circ}C$ for longer than 15[min]. It is found that the sheet resistance decreases with the increase of annealing temperature.

• 전기의세계
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• v.21 no.1
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• pp.17-21
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• 1972

Electrical resistivity and switching phenomena in glass semiconductor of AsTe and AsTeGa is studied. Samples sliced from ingot which is air quenched or water quenched, show high resistivity at room temperature. The resistivity of the AsTe and AsTeGa is 1*10$^{6}$ .ohm.-cm and 5*10$^{6}$ .ohm.-cm at 27.deg. C. Switching phenomena take place in thin the thick samples. Holding voltage is different with the thickness of the samples and the characteristics of switching in the thin and thick samhles are similar. When square wave pulse voltage is applied, delay time is detected to 5.mu.sec by oscilloscpoe.

• Korean Journal of Veterinary Research
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• v.44 no.2
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• pp.217-224
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• 2004

This study was carried out to investigate the antibiotic resistance pattern of Listeria spp. and Staphylococcus aureus. A total of 17 (14.8%) L. monocytogenes, 13 (11.3%) L. innocua, 7 (7%) L. welshimeri, and 83 (72.2%) S. aureus were isolated from commercial poultry carcasses in Seoul and Kyonggi province during the period between 2001 and 2003. Antibiotic susceptibility test of all Listeria strains isolated was performed by the disk agar diffusion method. Antibiotics used in the study were as follows; Amikacin (An), Ampicillin (Am), Cephalothin (Cf), Chloramphenicol (C), Ciprofloxacin (Cip), Erythromycin (E), Gentamicin (Gm), Imipenem (Ipm), Kanamycin (K), Minocycline (Mi), Neomycin (N), Norfloxacin (Nor), Ofloxacin (Ofx), Penicillin (P), Streptomycin (S), Tetracycline (Te), Tobramycin (Nn), Trimethoprim (Tmp), Trimethoprim/Sulfamethoxazloe (Sxt), and Vancomycin (Va). The antibiotic resistance pattern of S. aureus isolates was performed by the disk agar diffusion method. For the latter program, antibiotics used to the study were as follows; Cf, C, Cip, Clindamycin (Cc), E, Gm, Ipm, Nafcillin (Nf), Oxacillin (Ox), P, Te, Sxt, and Va. Of the 17 L. monocytogenes isolates, 94.1% were resistant to Te, 88.2% to Mi, 11.8% to Nor, 11.8% to S, 5.9% to Cip, and 5.9% to C. Of 13 L. innocua, 53.8% were resistant to Te, 23.1% to Mi, 23.1% to S, 7.7% to Cip, and 7.7% to Nor. Of 7 L. welshimeri, 57.1% were resistant to Te, and 14.3% to Am. Of 83 S. aureus, 100% were resistant to Te, 86.7% to Gm, 34.9% to P, 15.7% to Cip, 12% to Cc, 9.6% to E. The multiple antibiotic resistance patterns of L. monocytogenes isolates were observed in Te Mi Cip (5.9%), Te Mi Nor (5.9%), Te Mi (76.5%), and Te Nor (5.9%). Multiple antibiotic resistance was also found in L. innocua isolates. Resistant to Te Mi S Cip Nor was 7.7%, Te Mi S (7.7%), Te Mi (7.7%), and was 7.7% to Te S. Antibiotic resistance patterns for S. aureus isolats were demonstrated to Te Gm P Cip Cc E (6.0%), Te Gm Cip Cc E (3.6%), Te Gm P Cc (1.2%), Te Gm P (15.6%), Te Gm Cip (2.4%), Te P Cip (2.4%), Te Gm Cc (1.2%), Te Gm (56.6%), Te P (9.6%), and to Te Cip (1.2%). The results of this study suggest a high incidence of Lsteria spp. and S. aureus on poultry carcasses. The contaminated poultry carcasses may be a potential vehicle for foodborne infections due to multiple antimicrobial resistant organisms.

• Journal of the Korean institute of surface engineering
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• v.29 no.5
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• pp.325-329
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• 1996

We report on p-type arsenic doping of metalorganic vapor phase epitaxially (MOVPE) grown HgCdTe on (100) GaAs. HgCdTe was grown at $370^{\circ}C$ in a horizontal reactor with using dimethy-cadmium, diisoprophyltelluride, and elemental Hg. We used tris-dimethylaminoarsenic (DMAAs) as the metalorganic for p-doping. 4micron thick CdTe and subsequently 10micron thick HgCdTe were grown on (100) GaAs substrate. Interdiffused multilayer process in which thin CdTe and HgTe layers are grown alternately and interdiffused to obtain homogeneous HgCdTe alloys was used. Arsenic was doped during CdTe growth cycle. After growth HgCdTe was annealed at $415^{\circ}C$ for 15 min and then annealed again at $220^{\circ}C$ for 3 hr, both with Hg-saturate condition. We could obtain p-doping from 2.5$\times$$10^{16}$ to 6.6$\times$$10^{17}$$cm^{-3}$, depending on the DMAAs partial pressure. With the dual Hg-annealing, activation of arsenic was aboutt 90%, which was confirmed by SIMS measurement. With only low temperature annealing at $220^{\circ}C$ for 3hr, activation efficiency was about 50%.

• Current Optics and Photonics
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• v.2 no.6
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• pp.589-594
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• 2018

We have investigated the dimensional nature of center-of-mass exciton confinement states in a CdMnTe/CdTe/CdMnTe heterostructure, where the CdTe well is too wide (144 nm) to confine both electrons and holes but able to confine whole excitons in the center-of-mass coordinate. Fine multiple photoluminescence spectra with a few meV separation were observed at 6 K. From the thickness dependence of the transition rate, they were attributed to even numbered center-of-mass exciton confinement states (N = 2, 4, 6, ${\cdots}$, 18). Dimensionality of the center-of-mass exciton confinement states was also investigated in terms of temperature dependence of radiative decay time. At low temperatures (${\leq}12K$), we found that the ground state excitons are likely localized possibly due to the barrier interface fluctuation, resulting in a constant decay time (~350 ps). With increased temperature (${\geq}12K$), localized excitons are thermally released, giving rise to a linear temperature dependence of radiative decay time as an evidence of two-dimensional nature.