• Korean Journal of Acupuncture
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• v.24 no.1
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• pp.65-77
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• 2007

목 적 : 본 연구(硏究)는 수소양삼초경근(手少陽三焦頸筋)의 이론적(理綸的) 근거(根據)를 해부학적(解剖學的)으로 제공(提供)하고 임상(臨床)에 경근(經筋)의 정확(正確)한 적용(適用)을 위함이다. 방 법 : Cadaver에 경근(經筋)을 표시(表示)하고 각각(各各)의경 경혈부위(經穴部位)에 표식(標識)와 pore 작업을 수행하고 각 경혈부(經穴部)를 피부(皮膚), 근막(筋膜), 그리고 근육(筋肉)의 천층(淺層), 중문층(中問層), 그리고 심층부(深層部)를 순서적(順序的)으로 해부(解剖)하여 근육(筋肉), 신경(神經), 혈관(血管) 등을 관찰(觀察)한다. 결 과 및 결 론 : 수소양삼초경근(手少陽三焦經筋)의 해부학적(解剖學的) 고찰(考察) 결과(結果)는 다음과 같다. 1) 근(筋) 육(肉) : 천층에 근막(TE1), 근막확장대(TE2), 근막과 근간결합(TE3), 근막과 신근지대(TE4), 근막과총지신근건(TE5), 근막및 총지신근과 소지신근간(TE6), 근막과 소지신근(TE7), 총지신근(TE8), 척측수근신근과 소지신근간(TE9), 상완삼두근건(TE10, 11), 상완삼두근(TE12), 삼각근(TE13), 삼각근및 극하근과 극상근간(TE14). 승모근(TE15), 흉쇄유돌근(TE-16, 17, 18), 후이개근(TE19, 22), 상이개근(TE20), 전이개근및 이하선근막(TE21), 안륜근(TE23), 중층에 소지신근건과 총지신근건간(TE4), 측두근막과 측두근(TE2O, 22, 23), 심층에 배측골간근(TE3), 시지신근과 골간막(TE5) 장모지신근(TE6), 시지신근(TE7), 장지신근과 장모지외전근간(TE8, 9), 상완삼두근(TE13), 견갑거근(TE15), 두판상근(TE16), 경상설골근과 하악이복근간(TE17) , 이복근(TE18) .2) 신(神) 경(經) : 천층에 척골신경의 배측지(TE1, 2, 3), 후전완피신경(TE4, 5, 6, 8, 9, 10, 11), 내측전완피신경(TE5, 6, 7, 8, 9, 10, 11), 후상완피신경(TE12, 13), 상외측상완피신경(TE13), 외측쇄골상신경(TE14, 15),대이개신경(TE16, 17, 18, 19), 소후두신경(TE19, 20), 이개측두신경(TE20, 21, 22), 안면신경측두지(TE22, 23), 관골측두신경(TE23), 중층에 견갑상신경(TE15), 견갑배신경(TE15), 경상설골근신경(TE17), 후이개신경(TE18, 19, 20), 안면신경측두지(TE20, 21, 22), 심층에 후골간신경(TE5, 6, 7), 요골신경심지(TE8, 9, 12, 13), 견갑상신경(TE14), 액와신경가지(TE14), 부신경(TE16), 안면신경과 부신경가지(TE17), 설인신경(TE17), 설하신경(TE17), 경신경고리(TE17), 미주신경(TE17), 안면신경 (TE18). 3) 혈(血) 관(管) : 천층에 척측정맥배측지(TE1, 2), 고유수장지동맥배측지(TE1), 배측중수골동맥배측지(TE2), 배측중수골정맥(TE3), 척측피정맥(TE4, 5, 6, 7, 8, 9, 10, 11), 배측정맥궁(TE4), 부요측피정맥(TE6, 8, 9),요측피정맥(TE10, 11), 후견봉정맥가지(TE13, 14), 후이개동 ${\cdot}$ 정맥(TE16, 17, 18, 19, 20), 전이개동 ${\cdot}$ 정맥(TE20), 천측두동 ${\cdot}$ 정맥(TE22, 23), 중층에 후상완회선동맥(TE14), 견갑배동맥(TE15), 견갑상동맥(TE15),천측두동 ${\cdot}$ 정맥(TE21), 관골측두동 ${\cdot}$ 정맥(TE23), 심층에 배측중수골동맥(TE3), 배측수근동맥궁(TE4), 후골간동맥(TE4, 5, 6, 7, 8, 9), 전골간동맥(TE6, 7, 9), 심상완동맥(TE10, 11), 상완동맥측부지(TE10, 11), 중간 측부동맥(TE12), 요측측부동맥(TE12), 심상완동맥가지(TE13), 후상완회선동맥(TE13), 견갑상동맥(TE14), 후두동 ${\cdot}$ 정맥(TE16, 17), 내경정맥(TE17). 결 론 : 1. 수소양삼초경근(手少陽三焦經筋)은 근육(筋肉), 그리고 관련(關聯) 신경(神經), 혈관(血管)으로 구성된다. 2. 본 연구(硏究)는 경근(經筋)에 관한 기존(旣存)의 연구(硏究)와 비교(比較)하여 볼 때에 경근(經筋)의 구성요소(構成要素)에 있어서 약간(若干)의 차이(差異)를 보여준다. 3. 해부학적(解剖學的) 연구결동(硏究結東), 경근(經筋) 근육(筋肉)을 지배(支配)하는 신경(神經)${\cdot}$혈관(血管)의 개념(槪念)과 경근(經筋)을 스쳐 지나가는 신경(神經)${\cdot}$혈관(血管)의 개념(槪念)은 구분(區分)된다.

• Korean Journal of Acupuncture
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• v.24 no.2
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• pp.129-139
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• 2007

목적 : Signal transducers and activators of transcription 6 (Stat 6) 유전자는 면역세포의 발달에 있어서 중요한 유전인자이며, IL-4와 같은 사이토카인에 의해 유전자 발현이 조절된다. 본 연구에서는 Stat 6 유전자 제거 생쥐와 정상 (wild type, W/T) 생쥐에 carrageenan으로 염증을 유도한 후 족삼리에 침치료를 시행하여 시상하부에서의 유전자 발현 양상을 분석하고자 하였다. 방 법 : BALB/c (W/T, n=12) and BALB/c-Stat 6 유전자 제거 생쥐 (n=12)의 발뒤꿈치 표피에 1% carrageenan을 30 ul 주사하여 염증을 유도하였다. 침은 염증 유도 30분 후에 족삼리(ST36)에 시침하였으며, 염증유도에 의한 부종 증가율을 매 시간마다 측정하여 총 5시간동안 측정하였다. 마이크로에러이는 Stat 6 유전자 제거 생쥐를 염증 유발 군과 염증유발 후 침을 처치한 군으로 나누고, 시상하부를 적출하여 RNA를 분리한뒤 마이크로어레이 프로파일을 분석하였다. 결 과 : 염증에 의한 부종증가율을 비교한 결과, Stat 6 유전자 제거 생쥐 그룹의 부종증가율이 W/T 생쥐의 부종 증가율보다 약 50 % 정도 감소하였으며, 각 3, 4, 5시간째에 유의한 차이를 나타내었다. (각 p<0.05). W.T생쥐군과 Stat 6 유전자 제거 생쥐군 모두에서, 침 처치군이 염증 유발 군에 비해, 염증 유발 2시간 후부터 유의한 감소를 나타내었다. 시상하부의 유전자 발현을 관찰한 결과, 39개의 유전자가 3배 이상 감소하였으며, 19개의 유전자는 3배 이상 증가하였다. 결 론 : W/T 생쥐군과 Stat 6 유전자 제거 생쥐 모두에서 침의 진통효과는 나타나며, 이의 기전에는 시상하부에서의 침 치료에 의한 염증관련 유전자들의 감소와, 항염증과 관련된 유전자들이 증가가 관여하는 것으로 보인다., 10, 11), 내측전완피신경(TE5, 6, 7, 8, 9, 10, 11), 후상완피신경(TE12, 13), 상외측상완피신경(TE13), 외측쇄골상신경(TE14, 15),대이개신경(TE16, 17, 18, 19), 소후두신경(TE19, 20), 이개측두신경(TE20, 21, 22), 안면신경측두지(TE22, 23), 관골측두신경(TE23), 중층에 견갑상신경(TE15), 견갑배신경(TE15), 경상설골근신경(TE17), 후이개신경(TE18, 19, 20), 안면신경측두지(TE20, 21, 22), 심층에 후골간신경(TE5, 6, 7), 요골신경심지(TE8, 9, 12, 13), 견갑상신경(TE14), 액와신경가지(TE14), 부신경(TE16), 안면신경과 부신경가지(TE17), 설인신경(TE17), 설하신경(TE17), 경신경고리(TE17), 미주신경(TE17), 안면신경 (TE18). 3) 혈(血) 관(管) : 천층에 척측정맥배측지(TE1, 2), 고유수장지동맥배측지(TE1), 배측중수골동맥배측지(TE2), 배측중수골정맥(TE3), 척측피정맥(TE4, 5, 6, 7, 8, 9, 10, 11), 배측정맥궁(TE4), 부요측피정맥(TE6, 8, 9),요측피정맥(TE10, 11), 후견봉정맥가지(TE13, 14), 후이개동 ${\cdot}$ 정맥(TE16, 17, 18, 19, 20), 전이개동 ${\cdot}$ 정맥(TE20), 천측두동 ${\cdot}$ 정맥(TE22, 23), 중층에 후상완회선동맥(TE14), 견갑배동맥(TE15), 견갑상동맥(TE15),천측두동 ${\cdot}$ 정맥(TE21), 관골측두동 ${\cdot}$ 정맥(TE23), 심층에 배측중수골동맥(TE3), 배측수근동맥궁(TE4), 후골간동맥(TE4, 5, 6, 7, 8, 9), 전골간동맥(TE6, 7, 9)

• Korean Journal of Materials Research
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• v.8 no.6
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• pp.493-498
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• 1998

CdTe films were deposited by close spaced sublimation with various substrate temperatures, cell areas, and thicknesses of CdTe and ITO layers and their effects on the CdS/CdTe solar cells were investigated. The resistivity of CdTe layers employed in this study was 3$\times$ $10^{4}$$\Omega$cm For constant substrate temperature the optimum substrate ternperature for CdTe deposition was $600^{\circ}C$. To obtain larger grain size and more compact microstructure, CdTe film was initially deposited at 62$0^{\circ}C$, and then deposited at 54$0^{\circ}C$. The CdTe film was annealed at 62$0^{\circ}C$ and $600^{\circ}C$ sequentially to maintain the CdTe film quality. The photovoitaic cell efficiency improved by the "two-wave" process. For constant substrate temperature, the optimum thickness for CdTe was 5-6$\mu m$. Above 6$\mu m$ CdTe thickness, the bulk resistance of CdTe film degraded the cell performance. As the cell area increased the $V_{oc}$ remained almost constant, while $J_{sc}$ and FF strongly decreased because of the increase of lateral resistance of the ITO layer. The optimum thickness of the ITa layer in this study was 300~450nm. In this experiment we obtained the efficiency of 9.4% in the O.5cm' cells. The series resistance of the cell should be further reduced to increase the fill factor and improve the efficiency.

• Journal of Plant Biotechnology
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• v.33 no.1
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• pp.65-73
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• 2006

Regulatory mechanism for endogenous levels of castasterone (CS) and its biosynthetic precursors in shoots of maize was investigated by the use of enzyme solution prepared from the plant tissue. When [$^2H_0$]- and [$^2H_6$]-CS was used as substrates, [$^2H_0$]-26-norCS and [$^2H_3$]-28-norCS were identified as products, indicating that [$^2H_0$]- and [$^2H_6$]-CS are differently metabolized into [$^2H_0$]-26-norCS and [$^2H_3$]-28-norCS by C-26 and C-28 demethylation, respectively. This suggests that both C-26 and C-28 demethylation can be involved in CS catabolism. In fact that C-28 demethylation only occurred when isotope labeled substrate was used, however, C-26 demethylation is thought be a natural reaction occurred in the maize shoots. When 6-deoxoteasterone (6-deoxoTE) was used, 6-deoxo-26-norTE and 3-dehydro-6-deoxo-26-norTE as well as 6-deoxo-3-dehydroTE and 6-deoxotyphasterol (6-deoxoTY) were identified as enzyme products. When 6-deoxoTY was added, 6-deoxo-26-norTY as well as 6-deoxo-3-dehydroTE and 6-deoxoTE was identified as products. These indicate that C-26 demethylation of 6-deoxoTE, 6-deoxo-3-dehydroTE and 6-deoxoTY as well as a reversible C-3 epimerization from 6-deoxoTE to 6-deoxoTY intermediated by 6-deoxo-3-dehydroTE are operative in the maize shoots, demonstrating that endogenous levels of biosynthetic precursors of CS are also controlled by C-26 demethylation. Therefore, it is thought that C-26 demethylation is an important and a common deactivation process which functions to maintain steady state levels of endogenous brassinosteroids in the maize shoots.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.342-343
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• 2005

In this study,. the microwave dielectric properties of the $0.6TiTe_3O_8-0.4CaWO_4$ ceramics with sintering temperature were investigated for LTCC application. According to the X-ray diffraction patterns, the $0.6TiTe_3O_8-0.4CaWO_4$ ceramics had columbite structure of the $TiTe_3O_8$ phase and scheelite structure of the $CaWO_4$ phase. Increasing the sintering temperature, the bulk density, the dielectric constant and the quality factor of the $0.6TiTe_3O_8-0.4CaWO_4$ ceramics were increased. In the case of the $0.6TiTe_3O_8-0.4CaWO_4$ ceramics sintered at $810^{\circ}C$, the bulk density, the dielectric constant and the quality factor were 5.72$g/cm^2$, 33.6, 22,013GHz respectively.

• Bulletin of the Korean Chemical Society
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• v.18 no.10
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• pp.1105-1108
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• 1997

The new amorphous intermetallic compounds, M3(AsTe3)2: M=Cr, Co, Fe, were synthesized by the precipitation reaction of the Zintl anion AsTe33- with the divalent transition metal halides in aqueous solution and analyzed by EDS equipped with SEM and PIXE. The empirical formula of the specimens was found to be Fe3.0As1.8Te5.9, Co3.0As2.1Te6.5, and Cr3.0As2.0Te6.9 by the quantitative elemental analysis. The dc specific resistivity of the materials was measured as a function of temperature in the range from 20 to 300 K, in which their resistivity of Cr3(AsTe3)2 was largely dependent on temperature, while those of Co3(AsTe3)2 and Fe3(AsTe3)2 were only slightly dependent on temperature. To characterize the spin glass state of the specimens, the ac and dc magnetic susceptibility were measured and it was found that Co3(AsTe3)2 and Fe3(AsTe3)2 undergo a transition to a spin glass state at 6 K and 38 K, respectively. Magnetization data are reported as both thermal remanent magnetization (TRM) and isothermal remanent magnetization (IRM) as a function of magnetizing field and temperature.

• Journal of the Institute of Electronics and Information Engineers
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• v.52 no.9
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• pp.117-124
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• 2015

In this paper, we introduce how to control TR, TE physical MR parameters for managing $H_1$ spin's SI(Signal Intensity) which is combined with gadolinium following administration MR agent in T1 effect for diagnostic usefulness. we used MRI phantom made with 0.5 mol Gadoteridol. This phantom was scanned by FSE sequence with different TR, TE parameters. In this study, to make T1 effect, TR was 200, 250, 300, 350, 400, 450, 500, 550, 600 msec. In addition to, TE was 6.2, 12.4, 18.6, 21.6 msec. The results were as follows ; Each RSP(Reaction Starting Point) was 100, 50, 40, 30 mmol in TE 6.2, 12.4, 18.6, 21.6 msec being irrelevant to TR. In MPSI(Max Peak Signal Intensity), 4 mmol was showed in TR 200 msec while peak signal was decreased to low concentration mol in TR 250-600 msec. In terms of RA(Reaction Area), the highest SI was TE 6.2 msec in TR 200-600msec. According to the study, we are able to recognize it is possible to control enhance rates by managing TR and TE of MR parameters; moreover, we expect that enhanced T1 image in MR clinical field can be performed in a practical way with this quantitative data.

• Journal of Sensor Science and Technology
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• v.12 no.6
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• pp.282-288
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• 2003

We report the growth of HgCdTe by metal organic vapor phase epitaxy (MOVPE), using (211)B CdTe/Si substrates grown by molecular beam epitaxy (MBE). The surface morphology of these films is very smooth with hillock free. The etch pit densities (EPD) and full widths at half maximum (FWHM) of x-ray rocking curves exhibited that the crystalline quality of HgCdTe epilayer on MBE grown CdTe/Si was improved compare to HgCdTe on GaAs substrate. The Hall parameters of undoped HgCdTe layers on CdTe/Si showed n-type behavior with carrier concentration of $8{\times}10^{14}/cm^3$ at 77K. But HgCdTe on GaAs showed p-type conductivity due to in corporation of p-type impurities during GaAs substrate preparation. It is thought that these results are applicable for large area HgCdTe forcal plane arrays of $1024{\times}1024$ format and beyound.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.11a
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• pp.49-54
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• 1992

Devices of ITO/CdS/CdTe/Te/Al were prepared by Electron-Beam deposition under a vacuum of $7{\times}10^{-6}$[torr]. Optical, Electrical, Structural and Photovoltaic properties of thin film CdS/CdTe at substrate. temperature 300~500[$^{\circ}C$] were also investigated, The structure of CdTe films deposited was of the zincblende type a preferential orientation of the (111) plane parallel to the substrate, the CdTe dark resistivity was about $10^6[{\Omega}cm]$. The conversion, efficiency of the cell increased with increasing substrate temperature. The best-fabricated Cell was a conversion efficiency of 9.1[%].

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.05a
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• pp.62-65
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• 1995

CdTe crystals were grown by the vertical Bridgman method. P-type DcTe crystals were grown with Cd:Te= 1:1.001 wt. % ratio, while n-type CdTe crystals were 1:1 Also, CdTe:In crystals were investigated, Lattic constants were 6.489${\AA}$ for p-type 6.480${\AA}$for n=type and 6.483${\AA}$ for CdTe:In EPD was 10$\^$-3/-10$\^$4/cm$\^$-2/ for n-, p-type CdTd, 10$\^$4/-10$\^$5/cm$\^$-2 for Cd:Te:In using by E-Ag solution for (111) plane The carrier concentration, the resistivity and the Hall carrier mobility measured by the van der Pauw method were p=5.78${\times}$10$\^$15/cm$\^$-3/, $\rho$=20.2$\Omega$cm, ${\mu}$$\sub$p/=75.6cm$\^$-2/ V$\^$-1/ sec$\^$-1/ for p-typem n=2.98${\times}$10$\^$16/cm$\^$-3/, $\rho$=0.214$\Omega$cm, ${\mu}$$\sub$p/=978.9cm$\^$-2/ V$\^$-1/ sec$\^$-1/ for n-type and n=7.45${\times}$10$\^$16/cm$\^$-3/, $\rho$=1.54 ${\times}$10$\^$3/$\Omega$cm, ${\mu}$$\sub$p/=658.4 cm$\^$-2/ V$\^$-1/ sec$\^$-1/ for CdTe:In crystals, Transmittance of p-type CdTe was 61% that of n-type was 65%, Cd:Te:In showed 60% IR transmittance.