• Korean Journal of Animal Reproduction
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• v.20 no.1
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• pp.27-34
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• 1996

The objective of this study was to examine the cell number of Total, ICM and TE cells of bovine blastocysts according to development progression cultured in CR1 medium, which was reported as successfully supporting medium for preimplantaion bovine embryo development to the blastocyst stage, by differential labelling of the nuclei with immunosurgery and polynucleot-ide-specific fluorochromes. Blastocysts were obtained at day 8 after in vitro fertilization and classified to early, middle, expanded stage according to the developmental morphology; blastocoel expansion and zona thickness. Also, bias tocysts in the same category were divided into two parts to check the Total cell number by using bisbenzimide only and ICM, TE and Total cell number by using immunosurgery and two polynucleotide-specific fluorochromes. 1) The development rate of blastocysts at day 8 after in vitro fertilization was 29.3% and classified bIas tocysts to early, middle, expanded and hatching stage were 8.7, 9.9, 7.6 and 3.1%, respectively. 2) The numbers of total blastomere using bisbenzimide in the classified blastocysts to early, middie and expanded were 46.9${\pm}$8.6, 66.2${\pm}$12.5 and 122.8 ${\pm}$ 14.4, respectively. This indicated that CR1 is a appropriate culture medium for bovine embryo development. 3) The count of ICM and TE cell number by using differential labelling with immunosurgery and polynucleotide-specific fluorochromes in the classified blastocysts to early, middle and expanded; ICM cell numbers of were 12.8${\pm}$5.9, 26.3${\pm}$8.4 and 35.5${\pm}$15.0, respectively and TE cell numbers were 30.5${\pm}$5.0, 4 41.3${\pm}$8.2 and 81.1${\pm}$13.4, respectively. These results presented that the increase of ICM and TE cell numbers averaged two and three doublings between early and expanded blastocyst stage and also total cell number counted from ICM nuclei and TE nuclei by using differential label-ling showed the increase pattern with development advance level and the results were similar to total cell number obtained from bisbenzimide treatment only. Therefore, the differential labelling of ICM and TE nuclei in situ is a very useful technique to evaluate embryo qualities and can be used as an indicator on study of preim-plantation embryo development.

• Journal of the Microelectronics and Packaging Society
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• v.20 no.1
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• pp.15-19
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• 2013

The n-type $Bi_2(Te_{0.9}Se_{0.1})_3$ powders, which were fabricated by melting/grinding method and dispersed with 0.5 vol% $TiO_2$ nanopowders, were hot-pressed in order to investigate the effects of $TiO_2$ dispersion on the thermoelectric properties of the hot-pressed $Bi_2(Te_{0.9}Se_{0.1})_3$. Excellent thermoelectric properties such as a maximum figure-of-merit of $2.93{\times}10^{-3}/K$ and a maximum dimensionless figure-of-merit of 1.02 were obtained for the hot-pressed $Bi_2(Te_{0.9}Se_{0.1})_3$. With dispersion of 0.5 vol% $TiO_2$ nanopowders, the maximum figure-of-merit and the maximum dimensionless figure-of-merit decreased to $2.09{\times}10^{-3}/K$ and 0.68, respectively.

• Journal of the Institute of Electronics and Information Engineers
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• v.52 no.9
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• pp.117-124
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• 2015

In this paper, we introduce how to control TR, TE physical MR parameters for managing $H_1$ spin's SI(Signal Intensity) which is combined with gadolinium following administration MR agent in T1 effect for diagnostic usefulness. we used MRI phantom made with 0.5 mol Gadoteridol. This phantom was scanned by FSE sequence with different TR, TE parameters. In this study, to make T1 effect, TR was 200, 250, 300, 350, 400, 450, 500, 550, 600 msec. In addition to, TE was 6.2, 12.4, 18.6, 21.6 msec. The results were as follows ; Each RSP(Reaction Starting Point) was 100, 50, 40, 30 mmol in TE 6.2, 12.4, 18.6, 21.6 msec being irrelevant to TR. In MPSI(Max Peak Signal Intensity), 4 mmol was showed in TR 200 msec while peak signal was decreased to low concentration mol in TR 250-600 msec. In terms of RA(Reaction Area), the highest SI was TE 6.2 msec in TR 200-600msec. According to the study, we are able to recognize it is possible to control enhance rates by managing TR and TE of MR parameters; moreover, we expect that enhanced T1 image in MR clinical field can be performed in a practical way with this quantitative data.

• Korean Journal of Materials Research
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• v.12 no.8
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• pp.650-655
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• 2002

$SiO_2$ gels containing dispersed fine Te metal particles have been prepared by the sol- gel method using a starting solution containing Tetraethoxy Silane (Si($OC_2$ $H_{5}$ )$_4$), $H_2$O, Ethylalchol ($C_2$$H_{5}$OH), Nitric Acid ($HNO_3$) and Tellurium Tetracholoride ($TeCl_4$) in a several molar ratio. Gelling time of sols was about 3 days and viscosity of solution was very low about 2~3 cP for 3 days. Heat-treatments of the gel have been performed at 500, 700, 900, 1100 and $1300^{\circ}C$ for 1 hour, respectively. We have investigated TG-DTA, X-ray diffraction patterns and SEM of heat-treatmented gels. The size of Te fine particles dispersed in $SiO_2$ gel was about 0.8~1 $\mu\textrm{m}$ and the shape was almost quadrangle.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.10 no.2
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• pp.267-276
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• 1999

A 2 stage 6-pole bandpass filter (BPF) is designed and implemented by using K-band triple-mode cavity. The BPF has an 100MHz bandwidth at the center frequency of 18.5GHz and the response of the filter is Chebyshev function. The cavity filter uses two orthogonal $TE_{113}$ modes and one $TM_{012}$ mode. To obtain a Chebyshev response, the intercavity coupling between the adjacent cavities is accomplished by H-field component of TE modes parallel to slot plate. In this paper, the size and location of intercavity slot are determined by the detailed coupling equation from H-field of TE resonant modes in circular cavity. The measured results agree well with the theoretical one.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.143-146
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• 1996

In (GeTe)$_{100-x}$(Sb$_2$Te$_3$)$_{x}$(x=33.5, 50, 66.5, 80 at.%) thin films, the optical properties of amorphous and crystalline thin film, XRD were studied. Also, the application for the phase change optical recording materials with the high stability and rapid erasing ability were studied. In the (GeTe)$_{100-x}$(Sb$_2$Te$_{3}$)$_{x}$ the transmittance was decreased with the increase of x. In all thin films, the transmittance was decreased and the reflectance was increased by annealing and particularly, the reflectance before and after annealing showed the large reflectance ratio. The XRD pattern, it was confined that these change of optical properties was due to the crystallization of amorphous thin films. The reflectance change was investigated using isothermal annealing condition.ion.ion.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.9 no.4
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• pp.535-541
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• 1998

A 2 stage 6-pole bandpass filter(BPF) is designed and implemented by using triple-mode cavity for satellite payload system. The BPF has an 100 MHz bandwidth at the center frequency of 14.5 GHz, Ku-band. The cavity filter uses two orthogonal $TE_{113}$ modes and one $TM_{012}$ mode. The intercavity coupling between the adjacent cavities results in a Chebyshev response and is accomplished by H-field component of TE modes. The size and location of intercavity slot are determined by the coupling equation from H-field of TE resonant modes in circular cavity. The measured filter response agrees well with the theoretical data.

• Journal of the Korean Ceramic Society
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• v.55 no.5
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• pp.510-514
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• 2018

Colloidal semiconductor quantum dots (QDs), because of the novel optical and electrical properties that stem from their three-dimensional confinement, have attracted great interest for their potential applications in such fields as bio-imaging, display, and opto-electronics. However, many semiconductors that can be exploited for QD applications contain toxic elements. Herein, we synthesized non-toxic ZnTe/ZnSe (core/shell) type-II QDs by pyrolysis method. Because of the unique type-II character of these QDs, their emission can range over an extended wavelength regime, showing photoluminescence (PL) from 450 nm to 580 nm. By optimizing the ZnSe shell growth condition, resulting ZnTe/ZnSe type-II QDs shows PL quantum yield up to ~ 25% with 35 nm PL bandwidth. Using a simple two step cation exchange reaction, we also fabricated ZnTe/ZnSe type-II QDs with absorption extended over the whole visible region. The visible-light sensitized heavy metal free ZnTe/ZnSe type-II QDs can be relevant for opto-electronic applications such as displays, light emitting diodes, and bio-imaging probes.

• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.32-33
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• 2006

As next generation nonvolatile memory, chalcogenide-based phase change memory can substitute for a conventional flash memory from its high performance. Also, fast writing speed, low writing voltage, high sensing margin, low power consumption and repetition reliability over $10^{15}$ cycle shows its possibility. At our laboratory, we invented ${Ge_1}{Se_1}{Te_2}$ material to alternate with conventional ${Ge_2}{Sb_2}{Te_5}$ for improve its ability. We respect the ${Ge_1}{Se_1}{Te_2}$ material can be a solution for high power consumption problem and long time at 'set' performance. A conductivity experiment from variable temperature was performed to see reliability of repetition at read and write performance. Compare with conventional ${Ge_2}{Sb_2}{Te_5}$ material, these two materials are used as complex compound to get the finest parameter.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.203-204
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• 2005

PRAM (Phase change Random Access Memory) is one of the most promising candidates for next generation Non-volatile Memories. The Phase change material has been researched in the field of optical data storage media. Among the phase change materials $Ge_2Sb_2Te_5$(GST) is very well known for its high optical contrast in the state of amorphous and crystalline. However, the characteristics required in solid state memory are quite different from optical ones. In this study, the structural properties of GST thin films with composition were investigated for PRAM. The 100-nm thick GeTe and $Sb_2Te_3$ films were deposited on $SiO_2$/Si substrates by RF sputtering system. In order to characterize the crystal structure and morphology of these films, we performed x-ray diffraction (XRD) and atomic force microscopy (AFM).