• Korean Journal of Acupuncture
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• v.24 no.1
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• pp.65-77
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• 2007

목 적 : 본 연구(硏究)는 수소양삼초경근(手少陽三焦頸筋)의 이론적(理綸的) 근거(根據)를 해부학적(解剖學的)으로 제공(提供)하고 임상(臨床)에 경근(經筋)의 정확(正確)한 적용(適用)을 위함이다. 방 법 : Cadaver에 경근(經筋)을 표시(表示)하고 각각(各各)의경 경혈부위(經穴部位)에 표식(標識)와 pore 작업을 수행하고 각 경혈부(經穴部)를 피부(皮膚), 근막(筋膜), 그리고 근육(筋肉)의 천층(淺層), 중문층(中問層), 그리고 심층부(深層部)를 순서적(順序的)으로 해부(解剖)하여 근육(筋肉), 신경(神經), 혈관(血管) 등을 관찰(觀察)한다. 결 과 및 결 론 : 수소양삼초경근(手少陽三焦經筋)의 해부학적(解剖學的) 고찰(考察) 결과(結果)는 다음과 같다. 1) 근(筋) 육(肉) : 천층에 근막(TE1), 근막확장대(TE2), 근막과 근간결합(TE3), 근막과 신근지대(TE4), 근막과총지신근건(TE5), 근막및 총지신근과 소지신근간(TE6), 근막과 소지신근(TE7), 총지신근(TE8), 척측수근신근과 소지신근간(TE9), 상완삼두근건(TE10, 11), 상완삼두근(TE12), 삼각근(TE13), 삼각근및 극하근과 극상근간(TE14). 승모근(TE15), 흉쇄유돌근(TE-16, 17, 18), 후이개근(TE19, 22), 상이개근(TE20), 전이개근및 이하선근막(TE21), 안륜근(TE23), 중층에 소지신근건과 총지신근건간(TE4), 측두근막과 측두근(TE2O, 22, 23), 심층에 배측골간근(TE3), 시지신근과 골간막(TE5) 장모지신근(TE6), 시지신근(TE7), 장지신근과 장모지외전근간(TE8, 9), 상완삼두근(TE13), 견갑거근(TE15), 두판상근(TE16), 경상설골근과 하악이복근간(TE17) , 이복근(TE18) .2) 신(神) 경(經) : 천층에 척골신경의 배측지(TE1, 2, 3), 후전완피신경(TE4, 5, 6, 8, 9, 10, 11), 내측전완피신경(TE5, 6, 7, 8, 9, 10, 11), 후상완피신경(TE12, 13), 상외측상완피신경(TE13), 외측쇄골상신경(TE14, 15),대이개신경(TE16, 17, 18, 19), 소후두신경(TE19, 20), 이개측두신경(TE20, 21, 22), 안면신경측두지(TE22, 23), 관골측두신경(TE23), 중층에 견갑상신경(TE15), 견갑배신경(TE15), 경상설골근신경(TE17), 후이개신경(TE18, 19, 20), 안면신경측두지(TE20, 21, 22), 심층에 후골간신경(TE5, 6, 7), 요골신경심지(TE8, 9, 12, 13), 견갑상신경(TE14), 액와신경가지(TE14), 부신경(TE16), 안면신경과 부신경가지(TE17), 설인신경(TE17), 설하신경(TE17), 경신경고리(TE17), 미주신경(TE17), 안면신경 (TE18). 3) 혈(血) 관(管) : 천층에 척측정맥배측지(TE1, 2), 고유수장지동맥배측지(TE1), 배측중수골동맥배측지(TE2), 배측중수골정맥(TE3), 척측피정맥(TE4, 5, 6, 7, 8, 9, 10, 11), 배측정맥궁(TE4), 부요측피정맥(TE6, 8, 9),요측피정맥(TE10, 11), 후견봉정맥가지(TE13, 14), 후이개동 ${\cdot}$ 정맥(TE16, 17, 18, 19, 20), 전이개동 ${\cdot}$ 정맥(TE20), 천측두동 ${\cdot}$ 정맥(TE22, 23), 중층에 후상완회선동맥(TE14), 견갑배동맥(TE15), 견갑상동맥(TE15),천측두동 ${\cdot}$ 정맥(TE21), 관골측두동 ${\cdot}$ 정맥(TE23), 심층에 배측중수골동맥(TE3), 배측수근동맥궁(TE4), 후골간동맥(TE4, 5, 6, 7, 8, 9), 전골간동맥(TE6, 7, 9), 심상완동맥(TE10, 11), 상완동맥측부지(TE10, 11), 중간 측부동맥(TE12), 요측측부동맥(TE12), 심상완동맥가지(TE13), 후상완회선동맥(TE13), 견갑상동맥(TE14), 후두동 ${\cdot}$ 정맥(TE16, 17), 내경정맥(TE17). 결 론 : 1. 수소양삼초경근(手少陽三焦經筋)은 근육(筋肉), 그리고 관련(關聯) 신경(神經), 혈관(血管)으로 구성된다. 2. 본 연구(硏究)는 경근(經筋)에 관한 기존(旣存)의 연구(硏究)와 비교(比較)하여 볼 때에 경근(經筋)의 구성요소(構成要素)에 있어서 약간(若干)의 차이(差異)를 보여준다. 3. 해부학적(解剖學的) 연구결동(硏究結東), 경근(經筋) 근육(筋肉)을 지배(支配)하는 신경(神經)${\cdot}$혈관(血管)의 개념(槪念)과 경근(經筋)을 스쳐 지나가는 신경(神經)${\cdot}$혈관(血管)의 개념(槪念)은 구분(區分)된다.

• Korean Journal of Metals and Materials
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• v.47 no.4
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• pp.248-255
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• 2009

A micro thermoelectric device was processed by electroplating the n-type Bi-Te nanowires and ptype Sb-Te nanowires into an alumina template with 200 nm pores. Power generation characteristics of the micro devices composed of the Bi-Te nanowires, the Sb-Te nanowires, and both the Bi-Te and the Sb-Te nanowires were analyzed with applying a temperature difference of $40^{\circ}C$ across the devices along the thickness direction. The n-type Bi-Te and the p-type Sb-Te nanowire devices exhibited thermoelectric power outputs of $3.8{\times}10^{-10}W$ and $4.8{\times}10^{-10}W$, respectively. The output power of the device composed of both the Bi-Te and the Sb-Te nanowires decreased to $1.4{\times}10^{-10}W$ due to a large electrical resistance of the Cu electrode connecting the Bi-Te nanowire array with the Sb-Te nanowire array.

• Korean Journal of Crystallography
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• v.12 no.3
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• pp.171-176
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• 2001

HgCdTe films were grown on the (100). (111), (211) CdZnTe, and (100) GaAs substrates by metal organic chemical vapor epitaxy. We have investigated the surface morphology, electrical properties, crystalline qualities, and composition of HgCdTe with substrates orientation. Three dimensional facet growth was occurred on (111) CdZnTe substrate. The crystalline quality of HgCdTe on (100) CdZnTe was superior to that of HgCdTe on (100) GaAs. FWHM values of double crystal x-ray diffraction of HgCdTe on (100) CdZnTe and (100) GaAs were 55 and 125arcsec, respectively. HgCdTe on GaAs substrate showed n-type conductivity with high mobility, however, HgCdTe on CdZnTe showed p-type conductivity with carrier concentration of higher than 10/sup 16/㎤.

• Journal of the Microelectronics and Packaging Society
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• v.17 no.4
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• pp.89-94
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• 2010

Bi-Te films were processed by coevaporation of Bi and Te dual sources with variations of the mole ratio of the Bi and Te evaporation sources, and thermoelectric properties of the coevaporated Bi-Te films were characterized. The coevaporated Bi-Te films were n-type semiconductors and exhibited Seebeck coefficients of $-60{\sim}-80{\mu}V/K$. The Terich Bi-Te film, processed with Bi and Te dual sources of 30 mol% Bi : 70 mol% Te ratio, exhibited a power factor of $5{\times}10^{-4}W/m-K^2$. On the other hand, a power factor of $17.7{\times}10^{-4}W/m-K^2$ was obtained for the Bi-rich film coevaporated using Bi and Te dual sources of 90 mol% Bi : 10 mol% Te ratio.

• Journal of Sensor Science and Technology
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• v.12 no.6
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• pp.282-288
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• 2003

We report the growth of HgCdTe by metal organic vapor phase epitaxy (MOVPE), using (211)B CdTe/Si substrates grown by molecular beam epitaxy (MBE). The surface morphology of these films is very smooth with hillock free. The etch pit densities (EPD) and full widths at half maximum (FWHM) of x-ray rocking curves exhibited that the crystalline quality of HgCdTe epilayer on MBE grown CdTe/Si was improved compare to HgCdTe on GaAs substrate. The Hall parameters of undoped HgCdTe layers on CdTe/Si showed n-type behavior with carrier concentration of $8{\times}10^{14}/cm^3$ at 77K. But HgCdTe on GaAs showed p-type conductivity due to in corporation of p-type impurities during GaAs substrate preparation. It is thought that these results are applicable for large area HgCdTe forcal plane arrays of $1024{\times}1024$ format and beyound.

• Current Photovoltaic Research
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• v.3 no.1
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• pp.10-15
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• 2015

Cu doping by copper or $Cu_2Te$ materials enhances p+ formation in CdTe near the back contact interface, allowing better formation of ohmic contact. However, the Cu in CdTe junction is also considered as a principal component of CdTe cell degradation. In this paper, Na-doped ZnTe layer was employed as a back contact material to improve the stability of CdTe solar cells. As a process variable, post $CdCl_2$ treatment of CdS/CdTe film was conducted before or after depositing ZnTe:Na on CdTe. The change of the photovoltaic properties of CdTe cells were investigated with aging time. Low-temperature photoluminescence analysis was conducted to describe the degradation mechanism. The result showed that the CdTe solar cells with better stability compare to Cu contact were achieved using an optimized ZnTe:Na back contact.

• Journal of the Microelectronics and Packaging Society
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• v.19 no.1
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• pp.33-38
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• 2012

An in-plane thermoelectric sensor was processed on a glass substrate by evaporation of the n-type Bi-Te and p-type Sb-Te thin films, and its sensing characteristics were evaluated. The n-type Bi-Te thins film used to fabricate the inplane sensor exhibited a Seebeck coefficient of -165 ${\mu}V$/K and a power factor of $80{\times}10^{-4}W/K^2-m$. The p-type Sb-Te thin film used to fabricate the in-plane sensor exhibited a Seebeck coefficient of 142 ${\mu}V$/K and a power factor of $51.7{\times}10^{-4}W/K^2-m$. The in-plane thermoelectric sensor consisting of 15 pairs of the n-type Bi-Te and the p-type Sb-Te evaporated thin films exhibited a sensitivity of 2.8 mV/K.

• Korean Journal of Acupuncture
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• v.24 no.2
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• pp.129-139
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• 2007

목적 : Signal transducers and activators of transcription 6 (Stat 6) 유전자는 면역세포의 발달에 있어서 중요한 유전인자이며, IL-4와 같은 사이토카인에 의해 유전자 발현이 조절된다. 본 연구에서는 Stat 6 유전자 제거 생쥐와 정상 (wild type, W/T) 생쥐에 carrageenan으로 염증을 유도한 후 족삼리에 침치료를 시행하여 시상하부에서의 유전자 발현 양상을 분석하고자 하였다. 방 법 : BALB/c (W/T, n=12) and BALB/c-Stat 6 유전자 제거 생쥐 (n=12)의 발뒤꿈치 표피에 1% carrageenan을 30 ul 주사하여 염증을 유도하였다. 침은 염증 유도 30분 후에 족삼리(ST36)에 시침하였으며, 염증유도에 의한 부종 증가율을 매 시간마다 측정하여 총 5시간동안 측정하였다. 마이크로에러이는 Stat 6 유전자 제거 생쥐를 염증 유발 군과 염증유발 후 침을 처치한 군으로 나누고, 시상하부를 적출하여 RNA를 분리한뒤 마이크로어레이 프로파일을 분석하였다. 결 과 : 염증에 의한 부종증가율을 비교한 결과, Stat 6 유전자 제거 생쥐 그룹의 부종증가율이 W/T 생쥐의 부종 증가율보다 약 50 % 정도 감소하였으며, 각 3, 4, 5시간째에 유의한 차이를 나타내었다. (각 p<0.05). W.T생쥐군과 Stat 6 유전자 제거 생쥐군 모두에서, 침 처치군이 염증 유발 군에 비해, 염증 유발 2시간 후부터 유의한 감소를 나타내었다. 시상하부의 유전자 발현을 관찰한 결과, 39개의 유전자가 3배 이상 감소하였으며, 19개의 유전자는 3배 이상 증가하였다. 결 론 : W/T 생쥐군과 Stat 6 유전자 제거 생쥐 모두에서 침의 진통효과는 나타나며, 이의 기전에는 시상하부에서의 침 치료에 의한 염증관련 유전자들의 감소와, 항염증과 관련된 유전자들이 증가가 관여하는 것으로 보인다., 10, 11), 내측전완피신경(TE5, 6, 7, 8, 9, 10, 11), 후상완피신경(TE12, 13), 상외측상완피신경(TE13), 외측쇄골상신경(TE14, 15),대이개신경(TE16, 17, 18, 19), 소후두신경(TE19, 20), 이개측두신경(TE20, 21, 22), 안면신경측두지(TE22, 23), 관골측두신경(TE23), 중층에 견갑상신경(TE15), 견갑배신경(TE15), 경상설골근신경(TE17), 후이개신경(TE18, 19, 20), 안면신경측두지(TE20, 21, 22), 심층에 후골간신경(TE5, 6, 7), 요골신경심지(TE8, 9, 12, 13), 견갑상신경(TE14), 액와신경가지(TE14), 부신경(TE16), 안면신경과 부신경가지(TE17), 설인신경(TE17), 설하신경(TE17), 경신경고리(TE17), 미주신경(TE17), 안면신경 (TE18). 3) 혈(血) 관(管) : 천층에 척측정맥배측지(TE1, 2), 고유수장지동맥배측지(TE1), 배측중수골동맥배측지(TE2), 배측중수골정맥(TE3), 척측피정맥(TE4, 5, 6, 7, 8, 9, 10, 11), 배측정맥궁(TE4), 부요측피정맥(TE6, 8, 9),요측피정맥(TE10, 11), 후견봉정맥가지(TE13, 14), 후이개동 ${\cdot}$ 정맥(TE16, 17, 18, 19, 20), 전이개동 ${\cdot}$ 정맥(TE20), 천측두동 ${\cdot}$ 정맥(TE22, 23), 중층에 후상완회선동맥(TE14), 견갑배동맥(TE15), 견갑상동맥(TE15),천측두동 ${\cdot}$ 정맥(TE21), 관골측두동 ${\cdot}$ 정맥(TE23), 심층에 배측중수골동맥(TE3), 배측수근동맥궁(TE4), 후골간동맥(TE4, 5, 6, 7, 8, 9), 전골간동맥(TE6, 7, 9)

• Journal of the Korean Vacuum Society
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• v.9 no.4
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• pp.353-359
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• 2000

$(Bi_{0.15}Sb_{0.85})_2Te_3$ and $(Bi_{1-x}Sb_x)_2Te_3$ thermoelectric thin films were prepared by magnetron sputtering process, and their thermoelectric characteristics were investigated with variation of the sputtering condition and the $Sb_2Te_3$ content. The $(Bi_{0.15}Sb_{0.85})_2Te_3$ film, deposited by DC sputtering at $300^{\circ}C$ with rotating the Corning glass substrate at 10 rpm, was fully crystallized to $(Bi,Sb)_2Te_3$ phase with c-axis preferred orientation. This $(Bi_{0.15}Sb_{0.85})_2Te_3$ film exhibited the Seebeck coefficient of 185 $\mu$V/K which was higher than the values of other $(Bi_{0.15}Sb_{0.85})_2Te_3$ films fabricated with different sputtering conditions. With increasing the $Sb_2Te_3$ content, the Seebeck coefficient and electrical resistivity of p-type $(Bi_{1-x}Sb_x)_2Te_3$ (0.77$\leq$x$\leq$1.0) film were lowered. Among p-type $(Bi_{1-x}Sb_x)_2Te_3$ films, a maximum power factor of $0.79{\times}10^{-3}W/K^2-m$ was obtained at (Bi_{0.05}Sb_{0.95})_2Te_3$ composition..

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.05a
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• pp.62-65
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• 1995

CdTe crystals were grown by the vertical Bridgman method. P-type DcTe crystals were grown with Cd:Te= 1:1.001 wt. % ratio, while n-type CdTe crystals were 1:1 Also, CdTe:In crystals were investigated, Lattic constants were 6.489${\AA}$ for p-type 6.480${\AA}$for n=type and 6.483${\AA}$ for CdTe:In EPD was 10$\^$-3/-10$\^$4/cm$\^$-2/ for n-, p-type CdTd, 10$\^$4/-10$\^$5/cm$\^$-2 for Cd:Te:In using by E-Ag solution for (111) plane The carrier concentration, the resistivity and the Hall carrier mobility measured by the van der Pauw method were p=5.78${\times}$10$\^$15/cm$\^$-3/, $\rho$=20.2$\Omega$cm, ${\mu}$$\sub$p/=75.6cm$\^$-2/ V$\^$-1/ sec$\^$-1/ for p-typem n=2.98${\times}$10$\^$16/cm$\^$-3/, $\rho$=0.214$\Omega$cm, ${\mu}$$\sub$p/=978.9cm$\^$-2/ V$\^$-1/ sec$\^$-1/ for n-type and n=7.45${\times}$10$\^$16/cm$\^$-3/, $\rho$=1.54 ${\times}$10$\^$3/$\Omega$cm, ${\mu}$$\sub$p/=658.4 cm$\^$-2/ V$\^$-1/ sec$\^$-1/ for CdTe:In crystals, Transmittance of p-type CdTe was 61% that of n-type was 65%, Cd:Te:In showed 60% IR transmittance.