• Journal of the Mineralogical Society of Korea
• /
• v.9 no.2
• /
• pp.93-101
• /
• 1996

Behavior of platinum group elements during crystallization within ore magma is of interest. In this study platinum is selected and its mineralogical and geochemical behavior in the presence of antimony and tellurium is investigated at 600$^{\circ}C$. High purity Pt, Sb, and Te are used as starting material and silica quartz tubings are as container. Rection products have been examined by use of ore microscope, X-ray diffractometer, electron microprobe analyser and micro-indentation hardness tester. stable phases at 600$^{\circ}C$ are platinum (Pt), Pt5Sb, Pt3Sb, PtSb, stumpflite (PtSb), geversite (PtSb), PtTe, Pt3Te4, Pt2Te3, moncheite (PtTe2), tellurantimony (Sb2Te3), and antimony (Sb). Geversite is the mineral showing the most significant extent of solid solution by up to 27 at% between Sb and Te elements. Isothermal section of 600$^{\circ}C$ is established in this study. It is noted that platinum cannot coexists with stumpflite or geversite under equilibrium condition, and stumpflite composition in equilibrium with geversite may be used as geothermometer.

• Transactions on Electrical and Electronic Materials
• /
• v.7 no.1
• /
• pp.7-11
• /
• 2006

The changes of the electrical conductivity in chalcogenide amorphous semiconductors, $Ge_{1}Se_{1}Te_{2}$, have been studied. A phase change random access memory (PRAM) device without an access transistor is successfully fabricated with the $Ge_{1}Se_{1}Te_{2}$-phase-change resistor, which has much higher electrical resistivity than $Ge_{2}Sb_{2}Te_{5}$ and its electric resistivity can be varied by the factor of $10^5$ times, relating with the degree of crystallization. 100 nm thick $Ge_{1}Se_{1}Te_{2}$ thin film was formed by vacuum deposition at $1.5{\times}10^{-5}$ Torr. The static mode switching (DC test) is tested for the $100\;{\mu}m-sized$ $Ge_{1}Se_{1}Te_{2}$ PRAM device. In the first sweep, the amorphous $Ge_{1}Se_{1}Te_{2}$ thin film showed a high resistance state at low voltage region. However, when it reached to the threshold voltage, $V_{th}$, the electrical resistance of device was drastically reduced through the formation of an electrically conducting path. The pulsed mode switching of the $20{\mu}m-sized$ $Ge_{1}Se_{1}Te_{2}$ PRAM device showed that the reset of device was done with a 80 ns-8.6 V pulse and the set of device was done with a 200 ns-4.3 V pulse.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.29 no.7
• /
• pp.408-413
• /
• 2016

The dielectric thin films applied to multi-colored semitransparent thin film solar cells have been extensively studied. In this work, we prepared GeSbTe and GeTe chalcogenide thin films using magnetron sputtering, and investigated their optical and phase-change properties to replace the dielectric films. The changes of surface morphology, sheet resistance, and X-ray diffraction of the Te-based chalcogenide films support the fact that the amorphous stability of GeTe films is superior to that of GeSbTe films. While both amorphous GeSbTe and GeTe films thinner than 30 nm have optical transparency between 5% and 60%, GeTe films transmit more visible light than GeSbTe films. It is confirmed by computer simulation that the color of semitransparent silicon thin film solar cells can be adjusted with the addition of GeSbTe or GeTe films. Since it is possible to adjust the contrast of the solar cells by exploiting the phase-change property, the two kinds of chalcogenide films are anticipated to be used as an optical layer in semitransparent solar cells.

• Transactions on Electrical and Electronic Materials
• /
• v.3 no.3
• /
• pp.8-13
• /
• 2002

Controlled precipitation of quasi-binary semiconductor system is newly proposed as an effective and reliable technique for the formation of well-defined and crystallographically aligned semiconductor nanostructures. Using HgTe-PbTe quasi-binary semiconductor system, self-aligned HgTe nanocrystallites distributed three dimensionally within PbTe matrix were successfully formed by the simple three step heat treatment process routinely found in age hardening process of metallic alloys. Examination of the resulting nano precipitates using conventional transmission electron microscopy (CTEM) and high resolution TEM (HRTEM) reveals that the coherent HgTe precipitates form as thin discs along the (100) habit planes making a crystallographic relation of {100}$\_$HgTe///{100}$\_$PbTe/ and [100]$\_$HgTe///[100]$\_$PbTe/. It is also found that the precipitate undergoes a gradual thickening and a faceting under isothermal aging up to 500 hours without any noticeable coarsening. These results, combined with the extreme dimension of the precipitates (4-5 nm in length and sub-nanometer in thickness) and the simplicity of the formation process, leads to the conclusion that controlled precipitation is an effective method for preparing desirable quantum-dot nanostructures.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.07a
• /
• pp.60-62
• /
• 2004

CdTe nanoparticles were synthesized in aqueous solution by colloidal method. The absorption and photoluminescence(PL) spectrum of the synthesized CdTe nanoparticles revealed the strong exitonic peak in the visible region. Electroluminescence of CdTe nanoparticles were observed in the structure of Al/CdTe/PVK/ITO and Al/CdTe/PEDOT/ITO that were fabricated by spin coating of polyvinylcarvazole(PVK), poly(3,4-ethylenedioxythiophene(PEDOT) and CdTe nanoparticles. The turn-on voltages of Al/CdTe/PVK/ITO and Al/CdTe/PEDOT/ITO for electroluminescence were 5V and 6V, respectively. We identified that the reduction of turn-on voltage resulted from the increase of hole injection into the hole transport layer due to lower ionization energy of PEDOT.

• Korean Journal of Optics and Photonics
• /
• v.8 no.6
• /
• pp.445-449
• /
• 1997

The complex refractive indices of $Ge_2Se_2Te_5$ which show reversible phase change between the crystalline phase and an amorphous one depending upon the annealing process have been determined in the spectral range of 0.7-4.5 eV. The $Ge_2Se_2Te_5$ films were DC sputter deposited on the crystalline silicon substrate. The spectro-ellipsometry data of a thick film were analyzed following the modelling procedure where the quantum mechanical dispersion relation were used for the complex refractive indices of both the cryastalline phase $Ge_2Se_2Te_5$ and and amorphous phase $Ge_2Se_2Te_5$, respectively. On the other hand, with the surface micro-roughness layer whose effective thickness was determined from AFM analysis, the spectro-ellipsometry data were numerically inverted to yield the complex refractive index of $Ge_2Se_2Te_5$ at each wavelength. With these set of complex refractive indices, the reflectance spectra were calculated and those spectra obtained from the numerical inversion showed better agreement with the experimental reflection spectra for both the cryastalline phase and an amorphous phase. Finally, the thin $Ge_2Se_2Te_5$ film which has the optimum thickness of 26 nm as the medium for optical recording was also analyzed and the quantitative result of the film thickness and the surface microroughness has been reported.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2010.03a
• /
• pp.11-11
• /
• 2010

In order to design for nano structured materials with enhanced thermoelectric properties, the alloys in the pseudo-binary $Bi_2Te_3$-PbTe system were investigated for their micro structure and thermal properties. For this synthesis the liquid alloys were cooled by water quenching method. The micro structure images were taken by using electron probe micro analyzer (EPMA). Dendritic and lamellar structures were clearly observed with the variation in the composition ratio between $Bi_2Te_3$ and PbTe. It was confirmed that a metastable compounds is $PbBi_2Te_4$ in the The $Bi_2Te_3$-PbTe system. The change in the composition increasing $Bi_2Te_3$ ratio causes to change structure from dendritic to lamellar. Seebeck coefficient of alloys 5 which the mixture rate of $Bi_2Te_3$ is 83% was measured as the highest value. In contrast, the others decreased by increasing $Bi_2Te_3$. n-type characteristics was observed at all condition except alloy 6 which $Bi_2Te_3$ ration is 91%. The power factors of all samples were calculated with Seebeck coefficient and resistivity. Also the thermal conductivity was measured by using laser flash analyzer (LFA). In this work, the microstructures and thermal properties have been measured as a function of ratio of $Bi_2Te_3$ in the $Bi_2Te_3$-PbTe system.

• Journal of the Korean Applied Science and Technology
• /
• v.41 no.1
• /
• pp.58-68
• /
• 2024

The purpose of this study was to investigate the effects of treadmill exercise treadmill exercise (TE) and environmental enrichment (EE) interventions on cognitive function, muscle function, and the expression of tight junction proteins in an Alzheimer's disease (AD) animal model. To create the AD animal model, aluminum chloride (AlCl₃) was administered for 90 days (40mg/kg/day), while simultaneously exposing the animals to TE (10-12m/min, 40-60min/day) or EE. The results showed that cognitive impairment and muscle dysfunction induced by AlCl₃ administration were alleviated by TE and EE. Furthermore, TE and EE reduced the increased expression of β-amyloid(Aβ), alpha-synuclein, and tumor necrosis factor-α (TNF-α) proteins observed in AD pathology. Additionally, TE and EE significantly increased the expression of decreased adhesive adjacent proteins (Occludin, Claudin-5, and ZO-1) induced by AlCl₃ administration. Lastly, correlation analysis between Aβ protein and tight junction proteins showed negative correlations (Occludin: r=-0.853, p=0.001; Claudin-5: r=-0.352, p=0.915; ZO-1: r=-0.424, p=0.0390). In conclusion, TE or EE interventions are considered effective exercise methods that partially alleviate pathological features of AD, improving cognitive and muscle function.

• Asian Pacific Journal of Cancer Prevention
• /
• v.14 no.9
• /
• pp.5427-5433
• /
• 2013

5-Azacytidine (5-azaC) was originally identified as an anticancer drug (NSC102876) which can cause hypomethylation of tumor suppressor genes. To assess its effects on runt-related transcription factor 3 (RUNX3), expression levels and the promoter methylation status of the RUNX3 gene were assessed. We also investigated alteration of biologic behavior of esophageal carcinoma TE-1 cells. MTT assays showed 5-azaC inhibited the proliferation of TE-1 cells in a time and dose-dependent way. Although other genes could be demethylated after 5-azaC intervention, we focused on RUNX3 gene in this study. The expression level of RUNX3 mRNA increased significantly in TE-1 cells after treatment with 5-azaC at hypotoxic levels. RT-PCR showed 5-azaC at $50{\mu}M$ had the highest RUNX3-induction activity. Methylation-specific PCR indicated that 5-azaC induced RUNX3 expression through demethylation. Migration and invasion of TE-1 cells were inhibited by 5-azaC, along with growth of Eca109 xenografts in nude mice. In conclusion, we demonstrate that the RUNX3 gene can be reactivated by the demethylation reagent 5-azaC, which inhibits the proliferation, migration and invasion of esophageal carcinoma TE-1 cells.

• Journal of Powder Materials
• /
• v.21 no.2
• /
• pp.137-141
• /
• 2014

In this study, we report the sintering behavior and properties of a $Ge_2Sb_2Te_5$ alloy powders for use as a sputtering target by spark plasma sintering. The effect of various sintering parameters, such as pressure, temperature and time, on the density and hardness of the target has been investigated in detail. Structural characterization was performed by scanning electron microscopy and X-ray diffraction. Hardness and thermal properties were measured by differential scanning calorimetry and micro-vickers hardness tester. The density and hardness of the sintered $Ge_2Sb_2Te_5$ materials were 5.8976~6.3687 $g/cm^3$ and 32~75 Hv, respectively.