• Title/Summary/Keyword: TA-4

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The Effects of Increased Temperature on Soybean [Glycine max (L.) Merrill] Growth and Seed Yield Responses in Temperature Gradient Chamber (온도구배챔버에서 온도 상승에 따른 콩의 생육과 수량 반응에 미치는 영향)

  • Lee, Yun-Ho;Cho, Hyeoun-Suk;Kim, Jun-Hwan;Sang, Wan-Gyu;Shin, Pyong;Baek, Jae-Kyeong;Seo, Myung-Chul
    • Korean Journal of Agricultural and Forest Meteorology
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    • v.20 no.2
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    • pp.159-165
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    • 2018
  • The seed yield of summer plants is affected by climate change due to high temperature. High temperature during the reproductive growth period decrease pod, seed weight in soybean. This study was conducted at National Institute of Crop Science (NICS) during the growing season. The objective of this study was to determine the effect of high temperature on growth and seed yield responses of soybean varieties using a temperature gradient chamber (TGC). In 2017, the Daewonkong (DWK), Pungsannamulkong (PSNK), and Deapungkong (DPK) were grown in three TGCs. Four temperature treatments, Ta (near ambient temperature), Ta+1 (ambient temperature+$1^{\circ}C$), $Ta+2^{\circ}C$ (ambient temperature+$2^{\circ}C$), $Ta+3^{\circ}C$ (ambient temperature+$3^{\circ}C$), $Ta+4^{\circ}C$ (ambient temperature+$4^{\circ}C$), were established by dividing the rows along which the temperature gradient was created. In all three cultivars, beginning bloom (R1) delayed at elevated temperature in $Ta+4^{\circ}C$. In addition, the days to beginning of seed fill and maturity were longer under higher temperature. The numbers of pod, 100 seed weight, and seed yield increased at elevated temperature in DWK. In contrast, seed yield components of PSNK and DPK were reduced in $Ta+4^{\circ}C$. The results suggest that 100 seed weight and seed size of soybean was low by increased temperature in $Ta+4^{\circ}C$ of PSNK and DPK.

Dielectric Properties of Cation-deficient Perovskite Ceramics and Oscillator Application (Cation-deficient 페로브스카이트 세라믹스의 유전 특성과 발진기 응용)

  • Kim, Jae-Sik;Choi, Eui-Sun;Ryu, Ki-Won;Lee, Young-Hie
    • Proceedings of the KIEE Conference
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    • 2006.10a
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    • pp.18-19
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    • 2006
  • In this study, dielectric properties of the ${Mg_5}{B_4}{O_{15}}$ (B=Ta, Nb) cation-deficient perovskite ceramics and its oscillator application are investigated. The cation-deficient perovskite ceramics are prepared through the solid-state route. According to the XRD pattern, ${Mg_4}{Ta_2}{O_9}$ and $Mg{Ta_2}{O_6}$ phase existed in calcined and sintered ${Mg_5}{Ta_4}{O_15}$ powder. Also ${Mg_5}{Ta_4}{O_{15}}$ phase added with increasing sintering temperature. In the case of calcined and sintered ${Mg_5}{Nb_4}{O_{15}}$ powder, single phase of ${Mg_5}{Nb_4}{O_{15}}$ is appeared. In the case of the ${Mg_5}{Ta_4}{O_{15}}$ and ${Mg_5}{Nb_4}{O_{15}}$ ceramics sintered at $1450^{\circ}C$ for 5h, the dielectric constant, quality factor, and temperature coefficient of the resonant frequency (TCRF) were 8.2, 259,473 GHz, $-10.91ppm/^{\circ}C$ and 14, 37,350 GHz, $-52.3\;ppm/^{\circ}C$, respectively. Simulated DR with ${Mg_5}{Ta_4}{O_{15}}$ ceramics had the operating frequency of 10.99 GHz and S(2,1) of -29.795 dB. Size of manufactured oscillator was $56{\times}48{\times}34\;mm^3 and operated at 11.93 GHz. Power output and second harmonic of oscillator were +13.61 dBm and -23.81 dBc at 23.85 GHz, respectively.

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Magnetic Properties of Transition Metal Monolayers on Ta(001) Surfaces

  • Youn, S.J.;Hong, S.C.
    • Journal of Magnetics
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    • v.13 no.4
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    • pp.140-143
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    • 2008
  • The magnetic and structural properties of transition metal (Mn, Fe, Co) monolayers on Ta(001) surfaces are investigated theoretically by using the first principles full-potential linearized augmented plane wave method. Mn and Fe monolayers become ferromagnetic on Ta(001) surfaces while Co monolayers becomes non-magnetic. The paramagnetism of Co monolayers is explained by the Stoner theory of magnetism. The magnetic coupling of a transition metal overlayer with a substrate is ascribed to the orbital hybridization between the s and d orbitals of the transition metal.

Study of Sequale of Low Back Pain in Traffic Accident Patients (교통사고 환자의 요통후유증에 대한 고찰)

  • Cho, Won-young;Lee, Kyoung-yoon;Park, Kwae-hwan
    • Journal of Acupuncture Research
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    • v.20 no.6
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    • pp.36-44
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    • 2003
  • Objective: We have various ways in evaluating the level of low back pain as sequelae, general approaches such as neurologic examination, MRI, Radiologic examination and evaluating the effect of psychological stress on the low back pain. Besides We can find another approach to evaluating the sequale of low back pain in TA patients. So, I intend to analyze how much relationship the patients that got low back pain by TA have with Roland Morris Disability Scale(RMS) in 2 months after discharge. Methods: In this article, I will compare two results of TA inpatients and non-TA inpatients, which obtained with the RMS. This study was carried out about 22 TA patients and 18 non-TA patients, who had low back pain and were hospitalized between March 2002 and July 2002. Results & conclusions : 1. RMS point is related with the post-discharge term to a point of time of answering the questionnaire in both TA patients and non-TA patients. 2. In distribution of RMS point, Gr II take most possesion as 41% in TA patients while Gr I take most possesion as 56% in non-TA patients. 3. In distribution of RMS point, patients that correspond to more than Gr III take 27% in TA patients, 16% in non-TA patients. 4. TA patients show higher level of distribution than non-TA patients in RMS point in verifying them by mean value and T-test. 5. Degree of pain score change(${\Delta}$P.S), using mean value and T-test, showed lower level of distribution in TA patients than non-TA patients. 6. We can see that TA patients have more restriction in their life for low back pain.

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Effect of Ta/Cu Film Stack Structures on the Interfacial Adhesion Energy for Advanced Interconnects (미세 배선 적용을 위한 Ta/Cu 적층 구조에 따른 계면접착에너지 평가 및 분석)

  • Son, Kirak;Kim, Sungtae;Kim, Cheol;Kim, Gahui;Joo, Young-Chang;Park, Young-Bae
    • Journal of the Microelectronics and Packaging Society
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    • v.28 no.1
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    • pp.39-46
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    • 2021
  • The quantitative measurement of interfacial adhesion energy (Gc) of multilayer thin films for Cu interconnects was investigated using a double cantilever beam (DCB) and 4-point bending (4-PB) test. In the case of a sample with Ta diffusion barrier applied, all Gc values measured by the DCB and 4-PB tests were higher than 5 J/㎡, which is the minimum criterion for Cu/low-k integration without delamination. However, in the case of the Ta/Cu sample, measured Gc value of the DCB test was lower than 5 J/㎡. All Gc values measured by the 4-PB test were higher than those of the DCB test. Measured Gc values increase with increasing phase angle, that is, 4-PB test higher than DCB test due to increasing plastic energy dissipation and roughness-related shielding effects, which matches well interfacial fracture mechanics theory. As a result of the 4-PB test, Ta/Cu and Cu/Ta interfaces measured Gc values were higher than 5 J/㎡, suggesting that Ta is considered to be applicable as a diffusion barrier and a capping layer for Cu interconnects. The 4-PB test method is recommended for quantitative adhesion energy measurement of the Cu interconnect interface because the thermal stress due to the difference in coefficient of thermal expansion and the delamination due to chemical mechanical polishing have a large effect of the mixing mode including shear stress.

The Effect of the Processing Conditions on the Electrical Resistivity of Tantalum Nitride Thin Film Coated by the Reactive Sputtering (Sputtering법으로 제조된 TaNx 박막의 제조조건에 따른 전기저항 변화)

  • Choe, Yong-Rak;Kim, Seon-Hwa
    • Korean Journal of Materials Research
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    • v.7 no.12
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    • pp.1052-1057
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    • 1997
  • 현재 전기, 전자, 우주, 자동차, 무기 등의 여러 분야에서 응용되고 있는 TaNx 다층박막저항체의 특성을 개선하기 위하여 magnetron sputtering법으로 TaNx박막을 제조한 후, 온도와 질소분압에 따른 전기저항 및 TCR특성 변화를 조사하였고, 미세조직이 이들 전기적 성질에 미치는 영향을알아보기 위해 상분석과 morphology를 관찰하였다. 그 결과, TaNx을 코팅한 박막의 전기저항은 $N_{2}$Ar이 0.4 이상에서, 금속전도특성에서 이온전도특성으로 변화하였으며,Cr이 TCR효과를 안정시키는 역할은 하여 TaNx/A $I_{2}$ $O_{3}$보다 TaNx/Cr/A $i_{2}$ $O_{3}$박막의 TCR특성이 더 안정하게 나타났다. 또한 TaNx/A $I_{2}$ $O_{3}$박막과 TaNx/Cr/A $i_{2}$ $O_{3}$박막의 경우 모두 $N_{2}$/Ar이 0-0.4정도에서 TCR효과에 좋은 특성을 나타내었다. X-선회절 실험 결과 $N_{2}$/Ar비가 1일 경우에 T $a_{2}$ $N_{.8}$이 생성되었고, 분압이 증가함에 따라 비정질이 생성되었다. morphology가 $N_{2}$/Ar이 증가함에 따라 입자의 모양이 불연속아일랜드 형태로 변화하였으며, 이것은 질소분압에 따른 전기저항 변화와 일치하였다.다.

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Study for Fatigue Crack Propagation Behavior of Ti-alloy (Ti 합금의 피로 특성 고찰)

  • 정화일;조규종
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 1997.10a
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    • pp.786-789
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    • 1997
  • Ti-6Al-4V has been used widely in biomedical field. But because of its toxicity, the ${\beta}$ stabilizing element, V, in Ti-6Al-4V has been replaced by Nb, Ta. Ti-10Ta-10Nb has been developed for biomedical applications. The fatigue crack propagation behavior of Ti-alloy(Ti-10Ta-10Nb) was investigated, in comparison with that of pure Ti. In order to better understand the fundamental fatigue behavior of Ti-10Ta-10Nb, rotating bending fatigue tests have been carried out. Ti-10Ta-10Nb has a better fatigue strength than pure Ti. In this paper, fatigue life has been predicted with Nisitani's equation of the fatigue crack propagation that can be established by measuring fatigue crack growth rates.

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Immunological Activity of Solvent Fractions from $Epimedium$ $koreanum$ Nakai (삼지구엽초 용매별 분획 추출물의 면역관련 활성)

  • Park, Myoung-Su;Kim, Seo-Jin;Wang, Jun;Kim, Gwang-Hee;Oh, Deog-Hwan
    • Food Science and Preservation
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    • v.19 no.1
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    • pp.110-115
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    • 2012
  • $Epimedium$ $koreanum$ Nakai is a wild medicinal plant commonly consumed in South Korea due to its beneficial health effects. In this study, the antimutagenic and immunological activities of $E.$ $koreanum$ Nakai extracts were investigated for their use in food. In the immunomodulating activity, the effects of $E.$ $koreanum$ Nakai on the B cell (Rhamos) and T cell (Molt-4) were investigated. The results showed that the growth and viability of the B and T cells were increased and activated more in the ethylacetate (1.35 and 1.48 times) and water fraction (1.30 and 1.40 times), respectively. In the Ames test, none of the fractions produced a mutagenic effect on $Salmonella$. $typhimurium$ TA98 and TA 100. The ethylacetate fraction showed a strong antimutagenic effect (98%) on and a high butanol fraction (84%) of B(${\alpha}$)P in $S.$ $typhimurium$ TA98 and TA100, respectively. In 4-nitroquinoline-1-oxide (4NQO), all the solvent fractions showed an over 70% antimutagenic effect, except for the chloroform extract. Especially, ethylacetate and butanol showed strong inhibition of the mutagenic effects (80 and 90%) on 4NQO in $S.$ $typhimurium$ TA98 and TA100, respectively. These results provide preliminary data for the development of $E.$ $koreanum$ Nakai as an edible food material.

Dielectric properties of ${Ta_2}{O_5}$ thin film capacitor with $SnO_2$ thin film underlayer ($SnO_2$ 박막을 이용한 ${Ta_2}{O_5}$박막 커패시터의유전특성)

  • Kim, Jin-Seok;Jeong, Gang-Min;Lee, Mun-Hui
    • Korean Journal of Materials Research
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    • v.4 no.7
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    • pp.759-766
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    • 1994
  • Our investigation aimed to reduce the leakage current of $Ta_2O_5$ thin film capacitor by layering SnOz thin film layer under Ta thin film, thereby supplying extra oxygen ions from the $SnO_{2}$ underlayer to enhance the stoichiometry of $Ta_2O_5$ during the oxidation of Ta thin film. Tantalum was evaporated by e-beam or sputtered on p-Si wafers with various deposition temperatures and was oxidized by dry--oxygen at the temperatures between $500^{\circ}C$ and $900^{\circ}C$. Aluminum top and bottom electrodes were formed to make Al/$Ta_2O_5$/p-Si/Al or $Al/Ta_2O_5/SnO_2$p-Si/AI MIS type capacitors. LCR meter and pico-ammeter were used to measure the dielectric constants and leakage currents of the prepared thm film capacitors. XRD, AES and ESCA were employed to confirm the crystallization of the thin f~lm and the compositions of the films. Dielectric constant of $Ta_2O_5$ thin film capacitor with $SnO_{2}$ underlayer was found to be about 200, which is about 10 times higher than that of $Ta_2O_5$ thin film capacitor without $SnO_{2}$ underlayer. In addition, higher oxidation temperatures increased the dielectric constants and reduced the leakage current. Higher deposition temperature generally gave lower leakage current. $Ta_2O_5/SnO_2$ capacitor deposited at $200^{\circ}C$ and oxidized at $800^{\circ}C$ showed significantly lower leakage current, $10^{-7}A/\textrm{cm}^2$ at $4 \times 10^{5}$V/cm, compared to the one without $SnO_{2}$ underlayer. XRD showed that $Ta_2O_5$ thin film was crystallized above $700^{\circ}C$. AES and ESCA showed that initially the $SnO_{2}$, underlayer supplied oxygen ions to oxidize the Ta layer, however, Sn also diffused into the Ta thin film layer to form a new $Ta_xSn_YO_Z$ , ternary oxide layer after all.

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