• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.4
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• pp.756-760
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• 2007

The $(1-x)Mg_4Ta_2O_9-xwt%TiO_2\;(x=5\sim20)$ microwave dielectric ceramics were prepared by solid-state reaction method and sintered at $1450^{\circ}C$. According to the X-ray diffraction data, the $Mg_4Ta_2O_9-xwt%TiO_2$ ceramics had main phase of $Mg_4Ta_2O_9$ and $MgTi_2O_5$ peaks were added by increasing of $TiO_2$ addition. Microwave dielectric properties of the $Mg_4Ta_2O_9-xwt%TiO_2$ ceramics were influenced by $MgTi_2O_5$ phase and properties of $TiO_2$. There was a little decrement of the quality factor from 116,800GHz of pure $Mg_4Ta_2O_9$ to 100,100GHz of 15wt% $TiO_2$ added one. But there was excellent improvement in temperature coefficient of the resonant frequency (TCRF) by addition of 15wt% $TiO_2$. The dielectric constant quality factor and TCRF of the $Mg_4Ta_2O_9-xwt%TiO_2$ ceramics sintered at $1450^{\circ}C$ were $13.08\sim16.41,\;45,000\sim165,410GHz,\;-24.82\sim+3.88ppm/^{\circ}C$, respectively, depending on the value of x. Simulated dielectric resonator (DR) with $Mg_4Ta_2O_9-15wt%TiO_2$ ceramics had the operating frequency of 11.97GHz and $S_{2,1}$ of -35.034dB.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.4
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• pp.361-366
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• 2004

The interface stability of Ta-Mo alloy film on SiO$_2$ was investigated. Ta-Mo alloy films were formed by co-sputtering method, and the alloy composition was varied by controlling Ta and Mo sputtering power, When the atomic composition of Ta was about 91％, the measured work function was 4.24 eV that is suitable for NMOS gate. To identify interface stability between Ta-Mo alloy film and SiO$_2$, C-V and XRD measurements were performed on the samples annealed with rapid thermal processor between $600^{\circ}C$ and 90$0^{\circ}C$. Even after 90$0^{\circ}C$ rapid thermal annealing, excellent interface stability and electrical properties were observed. Also, thermodynamic analysis was studied to compare with experimental results.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.53 no.2
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• pp.67-72
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• 2004

The microwave dielectric properties and microstructure of the (1-x)$Mg_4Ta_2O_{9-x}TiO_2$(X=0, 0.3, 0.4) ceramic were, investigated. The specimens were prepared by the conventional mixed oxide method with sintering temperature of $1350^{\circ}C$∼$1425^{\circ}C$. According to the XRD patterns, the (1-x)$Mg_4Ta_2O_{9-x}TiO_2$(X=0, 0.3, 0.4) ceramics have the $Mg_4Ta_2O_{9}$ phase(hexagonal). The dielectric constant($\varepsilon$$_{\gamma}$) and density increased with sintering temperature and mole fraction of x. To improve the quality factor and the temperature coefficient of resonant frequency, TiO$_2$($\varepsilon_{r}$=100, $Q{\times}f_{r}$=40,000GHz, $\tau$$_{f}$=＋450 ppm/$^{\circ}C$) was added in $Mg_4Ta_2O_{9}$ ceramics. In the case of the $0.7Mg_4Ta_2O_{9}$-$0.3TiO_2$ and the $0.6Mg_4Ta_2O_{9}$-$0.4TiO_2$ceramics sintered at $1400^{\circ}C$ for 5hr., the microwave dielectric properties were $\varepsilon$$_{\gamma}$=11.72, $Q{\times}f_{r}$=126,419GHz, $\tau_{f}$=-31.82 ppm/$^{\circ}C$ and $\varepsilon_{r}$=12.19, $Q{\times}f_{r}$=109,411GHZ, $\tau$$_{f}$= -17.21 ppm/$^{\circ}C$, respectively.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1355-1356
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• 2006

The microwave dielectric properties of the $Ba_{5}Ta_{4}O_{15}$ ceramics with sintering temperature were investigated. All sample of the $Ba_{5}Ta_{4}O_{15}$ ceramics prepared by conventional mixed oxide method and sintered at $1450^{\circ}C{\sim}1575^{\circ}C$. Porosity of the $Ba_{5}Ta_{4}O_{15}$ ceramics was reduced with increasing sintering temperature. The bulk density, dielectric constant and Qualify factor increased with increasing sintering temperature. In the case of $Ba_{5}Ta_{4}O_{15}$ ceramics sintered at $1550^{\circ}C$, The bulk density, dielectric constant and quality factor were $7.31g/cm^2$ and 27.4, 30,635GHz, respectively.

• Korean Journal of Food Science and Technology
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• v.22 no.6
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• pp.625-631
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• 1990

This study was carried out to investigate the antimutagenic effects of five kinds of apple enzymatic browning reaction products(AEBRP) on mitomycin C (MMC), N-methyl-N'-nitro-N-nitrosoguanidine (MNNG), 4-nitroquinoline-1-oxide(4NQO), benzo(${alpha}$)pyrene(B(${alpha}$)P) and 3-amino-1,4-dimethyl-5H-pyri-do [4,3-b]indol (Trp-P-1). In spore rec-assay using B. subtilis Hl7($rec^+$) and M45($rec^-$), homocatechol-AEBRP and hydroquinone-AEBRP showed strong antimutagenic effects on MMC and MNNG as the concentration of AEBRP increased. In the Ames test using S. typhimurium TA98 and TA100, hydroxyhydroquinone-AEBRP and pyrogallol-AEBRP showed strong antimutagenic effects on Trp-p-1 and B(${alpha}$)p in TA98 and TA100 in the presence of S-9 mix. Most of AEBRPs suppressed about 50% to 80% the mutagenesis in S. typhimurium TA98 induced by MNNG, however, AEBRPs except hydroxyhydroquinone-AEBRP showed antimutagenic effects of about 94% in TA100. Antimutagenic effects of the five kinds of AEBRPs on 4-NQO were more or less weak, in particular homocatechol-AEBRP exhibited the inhibitory effect of about 48% in TA98, and homocatechol-AEBRP and hydroquinone-AEBRP showed inhibitory effects of about 46% to 58% in TA 100.

• Korean Journal of Materials Research
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• v.7 no.10
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• pp.877-883
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• 1997

Ar 및 Ar과 $N_{2}$ 분위기하에서 rf 마그네트론 스퍼터링방법으로 Ta-AI과 Ta-AI-N합금막을 제조하였다. Ta-7.9at.% AI계열, Ta-26.7 at% AI게열과 Ta-45.4at.%AI계열에 Ar에 대한 질서유량비로 26%까지 질소를 첨가하여 Ta-AI-N박막을 증착한후, 300-$600^{\circ}C$온도 구산에서 열처리 전후의 구조 및 전기적 특성과 열적안정성을 통하여 레지스터의 적용가능성을 조사하였다. 구조 및 조성 분석은 X-선 회절과 Rutherford Backscattering Spectrometry(RBS)로 관찰하였고 열적안정성은 4단자법(four point probe method)을 이용한 저항변화를 통하여 측정하였다. 순수 Ta에 AI을 첨가하면 확장된 $\beta$($\beta$-Ta)N 합금박막에서 가장 열적안정성이 우수하게 나타났던 질소첨가 범위는 Ta $N_{hcp}$또는 TaN/ sub fcc/또는 Ta $N_{fcc}$와 비정질과의 혼합상순으로 상천이를 나타내었다. Ta-AI-N 합금박막에서 가장 열적안정성이 우수하게 나타났던 질서첨가 범위는 Ta-26.7at. % AI계열의 경우 19-36at.% $N_{2}$구간이었고, Ta-45.5at.% AI계열의 경우는 30-45at.%구간이었다. Ta-AI합금박막은 질소가 첨가되지 않아도 열처리 온도 및 시간에 따라 약 10% 이내의 비교적 작은 저항변화를 보여 열적안정성이 우수하지만 질소를 첨가하여 Ta-AI-N합금박막을 형성시킬경우, 증착된 상태에서 이미 큰 비저항을 나타내었고 열처리 동안 3%이내의 매우 작은 저항변화를 나타내었기 때문에 레지스터용 재료로써 열적안정성에 대한 잠재력이 크다.

• Journal of the Korean Chemical Society
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• v.31 no.6
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• pp.486-490
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• 1987

The effect of the hydrogen-bonding between thioacetamide (TA) and amides (N,N-dimethylformamide (DMF), N,N-dimethylacetamide (DMA) and N,N-dimethylpropionamide (DMP)) on the hindered rotation of N-C(S) bond of TA was investigated by the nmr spectroscopy. The $^1H$-nmr spectrum of $NH_2$ group in TA was distinctly separated into two peaks with increasing the amount of $CCl_4$ and the effect of amides on the peak separation was in the order of DMF < DMA < DMP. Those phenomena were interpreted in terms of hydrogen-bonding between TA and amide.

• Bulletin of the Korean Chemical Society
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• v.21 no.7
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• pp.679-684
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• 2000

The Sr2Co0.5Nb(Ta)0.5O4 and Sr3CoNb(Ta)O7 compounds, both with Ruddlesden-Popper structures, have been synthesized by the ceramic method at $1150^{\circ}C$ under atmospheric pressure. The crystallographic structure of the compounds was assigned to the tetr agonal system with space group 14/mmm by X-ray diffraction(XRD) Rietveld refinement. The reduced lattice volume and lattice parameters increased as the Ta with 5d substitutes for the Nb with 4d in the compounds. The Co/Nb(Ta)O bond length has been determined by X-ray absorption spectroscopic(EXAFS/XANES) analysis and the XRD refinement. The CoO6,octahedra were tetragonally distorted by elongation of Co-O bond along the c-axis. The magnetic measurement shows the compounds Sr2Co0.5Nb(Ta)0.5O4 and Sr3CoNb(Ta)O7 have paramagnetic properties and the Co ions with intermediate spin sates between high and low spins in D4h symmetry. All the compounds showed semiconducting behavior whose electrical conductivity increased with temperature up to 1000 K. The electrical conductiviy increased and the activation energy for the conduction decreased as the number of perovskite layers increased in the compounds with chemical formula An+1BnO3n+1.

• Journal of the Korean Chemical Society
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• v.38 no.5
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• pp.345-350
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• 1994

The $v_{a^+}$ Amide II combination band of thioacetamide has been used to evaluate thermodynamic parameters of the hydrogen bonding of thioacetamide(TA) with pyridine(Py), quinoline(Qu), and acridine(Ac) in $CHCl_3$ and $CCl_4$ over the temperature range from 5$^{\circ}C$ to 55$^{\circ}C$. This combination band was resolved into two Lorentzian-Gaussian product bands which have been identified withmonomeric TA and hydrogen bonded TA. The thermodynamic parameters for the hydrogen bonded TA were determined by computer analysis of concentration and temperature dependent spectra. The standard enthalpies for the 1 : 1 hydrogen bonded complex of TA to pyridine, quinoline, and acridine in $CHCl_3$ have been found to be -7.6 kJ/mol, -6.5 kJ/mol, and -5.4 kJ/mol, respectively. And the standard enthalpies for the 1: 1 hydrogen bonded complex of TA to pyridine and quinoline in $CCl_4$ have been found to be -13.3kJ/mol, and -12.0kJ/mol, respectively.

• Korean Journal of Food Science and Technology
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• v.27 no.6
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• pp.897-901
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• 1995

To investigate the physiological activities of Humulus japonicus, we examined the mutagenic and antimutagenic effects of the extract and isolated the flavonoid compounds. The water and methanol extracts of Humulus japonicus did not show the mutagenicity by Ames test in the 0.5-4 mg/plate. The methanol extract showed the antimutagenic effect aganinst Salmonella typhimurium TA98 and TA100 induced by 4-nitro-o-phenylenediamine(NPD) and 4-nitroquinoline-N-oxide(NQO). The hexane fraction showed comparatively higher antimutagenic effect than other solvent fractions from the methanol extract. The 50% inhibition concentration($IC_{50}$) of hexane fraction were 2.0 mg/plate, 0.5 mg/plate in TA98 and TA100 respectively. Quercitrin and luteolin were identified in the ethyl acetate fraction from methanol extract of Humulus japonicus by TLC and HPLC.