• Korean Journal of Materials Research
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• v.21 no.2
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• pp.95-99
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• 2011

The microstructure and Cu diffusion barrier property of Ta-Si-N films for various Si and N compositions were studied. Ta-Si-N films of a wide range of compositions (Si: 0~30 at.%, N: 0~55 at.%) were deposited by DC magnetron reactive sputtering of Ta and Si targets. Deposition rates of Ta and Si films as a function of DC target current density for various $N_2/(Ar+N_2)$ flow rate ratios were investigated. The composition of Ta-Si-N films was examined by wavelength dispersive spectroscopy (WDS). The variation of the microstructure of Ta-Si-N films with Si and N composition was examined by X-ray diffraction (XRD). The degree of crystallinity of Ta-Si-N films decreased with increasing Si and N composition. The Cu diffusion barrier property of Ta-Si-N films with more than sixty compositions was investigated. The Cu(100 nm)/Ta-Si-N(30 nm)/Si structure was used to investigate the Cu diffusion barrier property of Ta-Si-N films. The microstructure of all Cu/Ta-Si-N/Si structures after heat treatment for 1 hour at various temperatures was examined by XRD. A contour map that shows the diffusion barrier failure temperature for Cu as a function of Si and N composition was completed. At Si compositions ranging from 0 to 15 at.%, the Cu diffusion barrier property was best when the composition ratio of Ta + Si and N was almost identical.

• Journal of Advanced Navigation Technology
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• v.7 no.2
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• pp.211-216
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• 2003

In this paper, characteristics of Ta-Ti alloy was studied as a gate electrode for NMOS devices to replace the widely used polysilicon. Ta-Ti alloy was deposited directly on $SiO_2$ by a co-sputtering method using two of Ta and Ti targets. The sputtering power of each metal target was 100W. To compare with Ta-Ti, Ta deposited with a 100W sputtering power was fabricated as well. In order to investigate the thermal/chemical stability of the Ta-Ti alloy gate, the alloy was annealed at $600^{\circ}C$ with rapid thermal annealer. No appreciable degradation of the device was observed. Also the results of electrical analysis showed that the work function of Ta-Ti metal alloy was about 4.1eV which was suitable for NMOS devices and sheet resistance of alloy was lower than that of polysilicon.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.639-643
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• 2004

[ $Ta_2O_5$ ]가 첨가된 $Ba(Zn_{1/3}Ta_{2/3})O_3$[BZT] 세라믹은 1:2 규칙화 정도가 증가하고 $Ba_3Ta_5O_{15}의 이차상이 새롭게 형성된다. $1580^{\circ}C$ 보다 높은 온도에서 소결된 BZT 세라믹은 $Ta_2O_5$를 첨가하면 입자의 성장이 일어나고 액상이 형성된다. 품질계수(Q) 값은 $1580^{\circ}C$ 보다 높은 온도에서 소결할 경우 미량의 $Ta_2O_5$ 첨가만으로도 상당히 증가한다. 상대밀도는 $Ta_2O_5$ 첨가량에 따라 감소하기 때문에 Q값의 증가는 상대밀도와는 무관하다. 반면에, $Ta_2O_5$의 첨가량에 따라 입자의 성장은 증가하였기 때문에 Q값의 향상은 입자크기와 관계가 있음을 알 수 있다. 많은 양의 $Ta_2O_5$ 첨가시 비록 입자 크기가 증가했음에도 불구하고 Q값이 매우 낮은 것을 볼 때, Q값의 감소는 $Ba_3Ta_5O_{15}$ 상의 영향과 낮은 밀도 값에 기인한 것이다.

• Journal of Korean Medicine Rehabilitation
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• v.20 no.2
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• pp.101-111
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• 2010

Objectives : The purpose of this study was to investigate differences between traffic accident and non-traffic accident patients in the early stage, by analysis of the heart rate variability(HRV) and visual analogue scale(VAS). Methods : This study carried out on 38 patients who complained of nuchal or lower back pain. They have received hospital treatment in Dae-Jeon Univ. Cheonan Oriental Hospital. In the TA(Traffic accident) group, the pain caused by TA and in non-TA group, the pain caused by other reasons. We measured HRV and VAS twice(pre-treatment(Tx.) and post-Tx.). Then we analyzed the data. Results : As time goes by, patients who complained of pain showed the inclination to improve ability to balance autonomic nerve system. And fatigue and pain were improved. But they showed the inclination to increase stress index. At pre-Tx., TA group had more stress and worse ability to balance autonomic nerve system, but showed lower fatigue index than non-TA group. But, as time goes by, in TA group the fatigue and autonomic balance got worse. At pre-Tx., non-TA group complained of more severe pain than TA group, but at post-Tx., TA group complained of more severe pain than non-TA group. In other words, in TA group, the decreasing rate of pain was lower than non-TA group. Conclusions : Results from this investigation showed that TA have a negative effect on stress index, ability to balance autonomic nerve system, fatigue index and decreasing rate of pain. These results are expected to consider characteristics of patients who complained of pain caused by TA.

• Korean Journal of Food Science and Technology
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• v.14 no.1
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• pp.67-71
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• 1982

Mutant strans of Salmonella typhimurium which require histidine for their growth sensitively, were easily revertant and lost the histidine requirement, when the strains contacted with some new mutagen. This work was carried out to determine the mutagenicity of kojic acid and emodin for the mutant strains of Salmonella typhimurium TA 98, TA 100, TA 1535, TA 1537, and TA 1538. Through the metabolic activation with liver microsome enzyme system of rat (S-9), kojic acid was recognized as a strong mutagen for the strain of TA 98, while it responsed weakly for the strain of TA 100. Without S-9 metabolic activation, kojic acid could not induce the mutation for the both strains of TA 98 and TA 100. Emodin was also recogniged as a strong mutagen for the strain of TA 1537 through the metabolic activation with S-9 mix.

• Korean Journal of Materials Research
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• v.6 no.10
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• pp.1017-1024
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• 1996

본 연구에서는 여러 기판에 대한 Cu의 확산정도를 알기 위하여 Ta, Nb, Co/Ta이중층 및 Co/Nb 이중층 위에 기화법으로 증착하고 열처리를 실시하였다. 열처리한 Ta막은 열처리하지 않은 Ta막보다 Cu 확산방지막으로서의 성능이 더 떨어지는데, 이것은 열처리에 의하여 Ta막이 결정화되기 때문이다. Cu/Co/Ta/(001)Si 구조에서의 구리 실리사이드 생성온도는 Cu/Co/Ta(001)Si 구조에서의 그것보다 더 높다. 한편, nb의 Cu에 대한 barrier 특성은 Ta와 비슷한 수준이다. 또한 Cu막 도포 이전에 Pd+HF활성화 전처리나 N2플라즈마 전처리를 실시하면, Cu의 핵생성뿐만 아니라 기판에 대한 Cu막의 접착성도 향상된다.

• The Magazine of the IEIE
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• v.19 no.5
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• pp.47-52
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• 1992

Ta₂O/Si 계면에서 SiO₂층이 dry O₂ 및 N₂분위기에서 열처리에 의해 형성되며 열처리 온도가 증가할수록 이층의 두께가 증가한다. Dry O₂ 및 N₂에서 열처리 할 때 얇은 Ta₂O 박막(40nm 이하)의 누설전류는 열처리 온도가 증가함에 따라 감소한다. 유전상수 vs 열처리 온도 관계에서 750℃또는 800℃에서 Ta₂O 박막의 결정화에 따른 최대값을 보여주며, 이러한 결정화에 의한 유전상수 증가 효과는 두꺼운 Ta₂O 박막에서 현저히 나타난다. 그러나 고온에서 열처리하면 계면에서 SiO₂층의 형성과 성장 때문에 유전상수는 감소한다. Al/Ta₂O/Si MIS capacitor의 stress에 따른 flat band voltage와 gate voltage instability는 열처리에 의해서 형성된 계면 SiO₂성장으로 설명할 수 있다. 열처리 조건의 함수로서 Ta₂O박막의 전기적 특성은 Ta₂O박막형성 방법에 관계없이 Ta₂O 박막 두께에 강하게 의존한다.

• Electrical & Electronic Materials
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• v.8 no.6
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• pp.715-720
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• 1995

기계적 합금화법에 의한 비정질화 과정을 Ni-Ta계 및 Cu-Ta계에 대하여 조사하였다. Ni-Ta합금계는 혼합엔탈피가 음이나, Cu-Ta계는 혼합엔탈피가 양인 열역학적으로 대조적인 합금계이다. 볼밀 중 발생하는 원자구조 변화를 중성자회절법을 이용하여 관찰하였다. 두 합금게에 있어서 기계적 합금화에 의한 비정질상이 생성되었다. 비정질 Cu-Ta합금의 local원자구조를 혼합엔탈피가 크게 음인 Ni-Ta계의 결과와 비교하였다. 그 결과, 대조적 특성을 가진 두 합금계임에도 불구하고 원자크기가 작은 Ni 및 Cu가 bcc Ta의 결정격자 속으로 우선적으로 침입함으로써 비정질화가 진행됨을 알 수 있었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.208-211
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• 2000

We prepared Co-Cr-Ta and Co-Cr-Ta/Ti thin film for perpendicular magnetic recording media by facing targets sputtering system (FTS system). Ti underlayer effects on crystallographic and magnetic characteristics of Co-Cr-Ta perpendicular magnetic recording media have been investigated. Crystallgraphic and magnetic characteristic of prepared thin films were evaluated by x-ray diffractometry(XRD), vibrating sample magnetometer(VSM) and kerr hysteresis loop measurement. The coercivity and anisotropy field increase by introduced Ti underlayer when substrate temperature is higher than 150$^{\circ}C$. The c-axis dispersion angle and grain size of Co-Cr-Ta/Ti thin film is decrease than Co-Cr-Ta when substrate temperature is higher than 100$^{\circ}C$. Consequently, the use of a Ti underlayer highly orientated can be improved crystallographic and magnetic characteristics of Co-Cr -Ta perpendicular media layer.

• Journal of the Korean institute of surface engineering
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• v.16 no.3
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• pp.108-123
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• 1983

순수 Mo와 Mo-Nb, Mo-Ta($\leq$10 at% Nb. Ta)합금을 1,500-2,06$0^{\circ}C$ 범위에서 탄소의 고용도를 연구하였다. 특수한 침탄방법으로 C2H2를 시편에 침탄한후 열처리하여 부분적으로 석출하거나 완전석출에 관계없는 화학적 분석방법으로 행하였다. 순수 Mo에서 최대탄소 고용도는 logCCmax = 7.02-9,490/T이다. Nb, Ta를 미량첨가하여 탄소의 최대 고용도는 Arrhenius 식을 적용할 수 없다. Nb-, Ta- 농도와 온도에 따라 Mo2C와 Nb-,Ta-를 함유한 여러 가지 탄화물상을 만들거나 $\alpha$고용체와 Mo가 포함된 NbC, TaC와 평형상태를 나타나기 때문이다. 실험온도 범위에서 Nb, Ta를 첨가량을 증가하면 탄화물 내부에 NbC, TaC로 석출된다. 고온에 용해된 a-고용체는 150-200 oK/Min으로 냉각하면 석출물은 결정입계나 결정내부에 나타난다. 순수 Mo에 Nb, Ta를 첨가하여도 경도, 파괴실험에서와 같이 인장강도는 크게 증가하지 않는다.