• Title/Summary/Keyword: T-junction

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Design of 1500V solar inverter stack beyond megawatt in NPC1 topology

  • Hao, Xin;Ma, Kwok-Wai;Zhao, Jia;Sun, Xin-Yu
    • Proceedings of the KIPE Conference
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    • 2017.07a
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    • pp.7-11
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    • 2017
  • This paper describes a design concept of NPC1 power stack for 1500VDC megawatt level solar inverter. This stack uses three latest half-bridge IGBT modules with highest power density and operation junction temperature, which enable realization of power level beyond 1MW without paralleling. Critical design concept on loop inductance is explained. Dynamic characteristics are verified by double-pulse test. Thermal characteristics and output power limits are verified by thermal test. Temperature-sensitive component on PCB as output power constraint is identified. Different PCB repositioning solutions are tested to give the overall output power thermal derating curves, which enable output power of 1.15MW at $T_A=55^{\circ}C$ with $15^{\circ}C$ thermal margin. The power stack characteristic and performance change under different thermal environment is further analyzed.

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Subthreshold characteristics of buried-channel pMOSFET device (매몰채널 pMOSFET소자의 서브쓰레쉬홀드 특성 고찰)

  • 서용진;장의구
    • Electrical & Electronic Materials
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    • v.8 no.6
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    • pp.708-714
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    • 1995
  • We have discussed the buried-channel(BC) behavior through the subthreshold characteristics of submicron PMOSFET device fabricated with twin well CMOS process. In this paper, we have guessed the initial conditions of ion implantation using process simulation, obtained the subthreshold characteristics as a function of process parameter variation such as threshold adjusting ion implant dose($D_c$), channel length(L), gate oxide thickness($T_ox$) and junction depth of source/drain($X_j$) using device simulation. The buried channel behavior with these process prarameter variation were showed apparent difference. Also, the fabricated pMOSFET device having different channel length represented good S.S value and low leakage current with increasing drain voltage.

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The study on the improvement of MOF insulating cover (MOF용 절연커버의 성능개선에 관한 연구)

  • Han, Ki-Boong;Lee, Dae-Jong;Han, Woon-Ki
    • Proceedings of the KIEE Conference
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    • 2003.07c
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    • pp.1753-1755
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    • 2003
  • MOF insulating cover used in 22.9 kV substation hasn't shown good performance in terms of electrical safety because of its defect by short clearance MOF cover and each input and output wire junction part. The MOF cover is easily moved by outside environment as wind or rain weather because of different size MOF cover and insulating busing, also can be leaded to breakdown by tracking. Therefore, we propose MOF cover which effectively prevents from electrical accidents in this paper. To decrease the electric field concentrated on specific part, we roundly design the shape of MOF cover and clearance between cover and live part was adjusted to be longer than before. The proposed MOF cover is evaluated by using the electric field solution program.

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Analysis of an AC/DC Resonant Pulse Power Converter for Energy Harvesting Using a Micro Piezoelectric Device

  • Chung Gyo-Bum;Ngo Khai D.T.
    • Journal of Power Electronics
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    • v.5 no.4
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    • pp.247-256
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    • 2005
  • In order to harvest power in an efficient manner from a micro piezoelectric (PZT) device for charging the battery of a remote system, a new AC/DC resonant pulse power converter is proposed. The proposed power converter has two stages in the power conversion process. The first stage includes N-type MOSFET full bridge rectifier. The second stage includes a boost converter having an N-type MOSFET and a P-type MOSFET. MOSFETs work in the $1^{st}$ or $3^{rd}$ quadrant region. A small inductor for the boost converter is assigned in order to make the size of the power converter as small as possible, which makes the on-interval of the MOSFET switch of the boost converter ultimately short. Due to this short on-interval, the parasitic junction capacitances of MOSFETs affect the performance of the power converter system. In this paper, the performance of the new converter is analytically and experimentally evaluated with consideration of the parasitic capacitance of switching devices.

Magnetic Characteristics of BiPbSrCaCuO Oxide Superconductor (BPSCCO 자기 효과)

  • Lee, Sangl-Heon;Lee, Sung-Gap;Lee, Young-Hie
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.11a
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    • pp.252-254
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    • 2003
  • A magnetic field sensor is fabricated with superconducting ceramics system. The sensor at liquid nitrogen temperature shows the increase in electrical resistance by applying magnetic field. Actually, the voltage drop across the sensor is changed from zero to a value more than $100{\mu}V$ by the applied magnetic field. The change in electrical resistance depends on magnetic field. The sensitivity of this sensor is 2.9 ohm/T. The increase in electrical resistance by the magnetic field is ascribed to a modification of the Josephson junctions due to the penetrating magnetic flux into the superconducting material.

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Selective Deposition of in-situ doped polysilicon using RTP-CVD for Shallow Junction Formation (얕은 접합형성을 위하여 in-situ 도핑된 폴리실리콘 박막의 RTP-CVD 선택적 증착에 관한 연구)

  • Chun, H.G.;Hsieh, T.Y.;Kwong, D.L.
    • Journal of the Korean Vacuum Society
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    • v.4 no.S1
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    • pp.13-20
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    • 1995
  • As으로 in-situ 도핑된 폴리실리콘 막을 원하는 부위에만 선택적으로 증착시킬 수 있는 RTP-CVD 증착기술이 성공적으로 수행되었다. 막의 증착속도는 도핑량이 증차함에 따라 점차 감소하였으나 As의 양이 5ppm보다 커지자 급격히 감소하였다. 또한 증착속도는 As의 유량이 일정할 때, SiH2CI2 유량에 따라 직선적으로 변화하였다. As 도펀트의 농도는 막내부에 비해 폴리실리콘/실리콘기판의 계면과 표면에서 상대적으로 높게 나타났으며, 특히 증착온도가 낮을 때 As 도펀트의 농도는 더 높아짐을 알 수 있었다. 실리콘 표면에서 약 40-50nm 위치에서 도펀트의 농도천이가 급격히 일어났으며, 그 결과 RTP-CVD공정을 이용할 때 극히 얕고 일정한 깊이분포를 갖는 n+-p junctions were achieved and laterally uniform delineated junctions were also observed using RTP-CVD.

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A Japanese National Project for Superconductor Network Devices

  • Hidaka, M.
    • Progress in Superconductivity
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    • v.5 no.1
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    • pp.1-4
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    • 2003
  • A five-year project for Nb-based single flux quantum (SFQ) circuits supported by Japan's Ministry of Economy Trade and Industry (METI) in Japan was started in September 2002. Since April 2003, the New Energy and Industrial Technology Development Organization (NEDO) has supported this Superconductor Network Device Project. The aim of the project is to improve the integration level of Nb-based SFQ circuits to several ten thousand Josephson junctions, in comparison with their starting integration level of only a few thousand junctions. Actual targets are a 20 GHz dual processor module for the servers and a 0.96 Tbps switch module for the routers. Starting in April 2003, the Nb project was merged with SFQ circuit research using a high-T$_{c}$ superconductor (HTS). The HTS research targets are a wide-band AD converter for mobile-phone base stations and a sampling oscilloscope for wide-band waveform measurements.

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Self-healing capsule manufacturing and characteristic analysis using microfluidic control method droplet manufacturing technology (미세 유체제어 방식 드랍렛 제작 기술을 이용한 자가치유 캡슐 제작 및 특성 분석)

  • Ji, Dong-min;Song, Won-Il;lee, ja sung;Ramos-Sebastian, Armando;Kim, S-Hoon
    • Proceedings of the Korean Institute of Building Construction Conference
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    • 2022.04a
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    • pp.251-252
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    • 2022
  • The microfluidic controlled droplet manufacturing system is one of the most powerful methods for capsule manufacturing. The microfluidic control method can control the type and size of the capsule by changing the size and configuration of the channel. In addition, by increasing the number of channels, capsules of uniform size can be mass-produced. In this paper, a capsule manufacturing system including flow-focusing and T junction method was designed. In addition, the effectiveness of this system was verified by manufacturing multi-emulsion capsules with a size of 2.2 to 3 mm.

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Multilevel Precision-Based Rational Design of Chemical Inhibitors Targeting the Hydrophobic Cleft of Toxoplasma gondii Apical Membrane Antigen 1 (AMA1)

  • Vetrivel, Umashankar;Muralikumar, Shalini;Mahalakshmi, B;K, Lily Therese;HN, Madhavan;Alameen, Mohamed;Thirumudi, Indhuja
    • Genomics & Informatics
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    • v.14 no.2
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    • pp.53-61
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    • 2016
  • Toxoplasma gondii is an intracellular Apicomplexan parasite and a causative agent of toxoplasmosis in human. It causes encephalitis, uveitis, chorioretinitis, and congenital infection. T. gondii invades the host cell by forming a moving junction (MJ) complex. This complex formation is initiated by intermolecular interactions between the two secretory parasitic proteins-namely, apical membrane antigen 1 (AMA1) and rhoptry neck protein 2 (RON2) and is critically essential for the host invasion process. By this study, we propose two potential leads, NSC95522 and NSC179676 that can efficiently target the AMA1 hydrophobic cleft, which is a hotspot for targeting MJ complex formation. The proposed leads are the result of an exhaustive conformational search-based virtual screen with multilevel precision scoring of the docking affinities. These two compounds surpassed all the precision levels of docking and also the stringent post docking and cumulative molecular dynamics evaluations. Moreover, the backbone flexibility of hotspot residues in the hydrophobic cleft, which has been previously reported to be essential for accommodative binding of RON2 to AMA1, was also highly perturbed by these compounds. Furthermore, binding free energy calculations of these two compounds also revealed a significant affinity to AMA1. Machine learning approaches also predicted these two compounds to possess more relevant activities. Hence, these two leads, NSC95522 and NSC179676, may prove to be potential inhibitors targeting AMA1-RON2 complex formation towards combating toxoplasmosis.

Effects of adenosine receptor agonist on the rocuronium-induced neuromuscular block and sugammadex-induced recovery

  • Kim, Yong Beom;Lee, Sangseok;Choi, Hey Ran;In, Junyong;Chang, Young Jin;Kim, Ha Jung;Ro, Young Jin;Yang, Hong-Seuk
    • Korean Journal of Anesthesiology
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    • v.71 no.6
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    • pp.476-482
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    • 2018
  • Background: Several types of receptors are found at neuromuscular presynaptic membranes. Presynaptic inhibitory $A_1$ and facilitatory $A_{2A}$ receptors mediate different modulatory functions on acetylcholine release. This study investigated whether adenosine $A_1$ receptor agonist contributes to the first twitch tension (T1) of train-of-four (TOF) stimulation depression and TOF fade during rocuronium-induced neuromuscular blockade, and sugammadex-induced recovery. Methods: Phrenic nerve-diaphragm tissues were obtained from 30 adult Sprague-Dawley rats. Each tissue specimen was randomly allocated to either control group or 2-chloroadenosine (CADO, $10{\mu}M$) group. One hour of reaction time was allowed before initiating main experimental data collection. Loading and boost doses of rocuronium were sequentially administered until > 95% depression of the T1 was achieved. After confirming that there was no T1 twitch tension response, 15 min of resting time was allowed, after which sugammadex was administered. Recovery profiles (T1, TOF ratio [TOFR], and recovery index) were collected for 1 h and compared between groups. Results: There were statistically significant differences on amount of rocuronium (actually used during experiment), TOFR changes during concentration-response of rocuronium (P = 0.04), and recovery profiles (P < 0.01) of CADO group comparing with the control group. However, at the initial phase of this experiment, dose-response of rocuronium in each group demonstrated no statistically significant differences (P = 0.12). Conclusions: The adenosine $A_1$ receptor agonist (CADO) influenced the TOFR and the recovery profile. After activating adenosine receptor, sugammadex-induced recovery from rocuronium-induced neuromuscular block was delayed.