• 전기의세계
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• v.25 no.1
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• pp.104-107
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• 1976

The switching characteristics of Non-crystalline As-Te-Si-Ge thin film device using Ag, In and Al metal for electrode, has been investigated. Threshold voltage and holding current of each sandwich type device varied due the to formation of the potential barrier in between non crystalline solid and electrode interface.

• Journal of the Korean Institute of Telematics and Electronics
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• v.16 no.6
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• pp.11-15
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• 1979

Electrical switching phenomenon was observed in the Fe2O3-Bi2O3 system for the sintering temperature range of 700$^{\circ}$~85$0^{\circ}C$ for DC conductivity measurements of these sinterd materials in the ambient temperature range of 30$^{\circ}$~20$0^{\circ}C$ have shown that the conductivity increases with increasing the sitering temperature and ambient temperature. The formation of the current channel and the experimental evidence of the dependence of switching threshold voltage on the ambient temperature, strongly indicates that the main electrical switching mechanism of sintered Fe2O3-Bi2O3 is thermal effect.

• Proceedings of the KIPE Conference
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• 2017.07a
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• pp.577-595
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• 2017

${\bullet}$ Silicon Carbide (SiC) had excellent material properties as the base material for next generation of power semiconductor. In developing SiC MOSFET, gate oxide reliability issues had to be first overcome before commercial application. Besides, a high and stable gate-source voltage threshold $V_{GS(th)}$ is also an important parameter for operation robustness. SiC MOSFET with such characteristics can directly use existing high-speed IGBT gate driver IC's. ${\bullet}$ The linear voltage drop characteristics of SiC MOSFET will bring lower conduction loss averaged over full AC cycle compared to similarly rate IGBT. Lower switching loss enable higher switching frequency. Using package with auxiliary source terminal for gate driving will further reduce switching losses. Dynamic characteristics can fully controlled by simple gate resistors. ${\bullet}$ The low switching losses characteristics of SiC MOSFET can substantially reduce power losses in high switching frequency operation. Significant power loss reduction is also possible even at low switching frequency and low switching speed. in T-type 3-level topology, SiC MOSFET solution enable three times higher switching freqeuncy at same efficiency.

• Proceedings of the IEEK Conference
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• 2000.11a
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• pp.307-310
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• 2000

ATM is the switching and multiplexing technology chosen by the ITU-T for the operation of B-lSDN. Basically, ATM technology is designed to combine the reliability of circuit switching with the efficiency and flexibility of packet switching technology. For servicing QoS in IPOA(IP over ATM) when the larger effort is given, it will be the good method that the original QoS benefits having ATM switching have in ATM layer underlying layer. The IETF has recently proposed Differentiated Services framework for provision of QoS. In this paper we analyse performance of two Diffserv mechanism. Threshold Dropping and Priority Scheduling. Threshold Dropping and Priority Scheduling can be regarded as basic mechanisms from which the other mechanisms have been derived. Hence comparative performance of these two mechanisms in providing required QoS is an important issue. In this Paper we carry out a performance comparison of the TD and PS mechanisms with the aim of providing the same level of packet loss to the preferred flow. Our comparison of the TD and PS allows us to determine resultant packet loss for the non-preferred flows as a function of various parameters of the two mechanisms.

• Bulletin of the Korean Chemical Society
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• v.23 no.9
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• pp.1247-1252
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• 2002

Mass-analyzed threshold ionization (MATI) technique is optimized to generate substantial amount of state-selected molecular ions sufficient for dynamics study. The main strategy is to stabilize intermediate (n = 100- 200) Rydberg states by l,m-mix ing induced by AC field. Electrical jitter inherent in high voltage switching is utilized for this purpose. A related technique to locate the MATI onset is also described.

• Nuclear Engineering and Technology
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• v.55 no.9
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• pp.3334-3341
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• 2023

We studied the irradiation effects of fast neutron generated by a 30 MeV cyclotron on the electrical and switching characteristics of NPT-IGBT devices. Fast neutron fluence ranges from 2.7 × 10⁹ to 1.82 × 10¹³ n/cm². Electrical characteristics of the IGBT device such as I-V, forward voltage drop and additionally switching characteristics of turn-on and -off were measured. As the neutron fluence increased, the device's threshold voltage decreased, the forward voltage drop increased significantly, and the turn-on and turn-off time became faster. In particular, the delay time of turn-on switching was improved by about 35% to a maximum of about 39.68 ns, and that of turn-off switching was also reduced by about 40%-84.89 ns, showing a faster switching.

• Applied Science and Convergence Technology
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• v.24 no.6
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• pp.278-283
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• 2015

In this work, the electrical bistability of an organic CT complex is demonstrated and the possible switching mechanism is proposed. 2,9-Dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) and tetracyanoquinodimethane (TCNQ) are used as an organic donor and acceptor, respectively, and poly-methamethylacrylate (PMMA) is used as a polymeric matrix for spin-coating. A device with the Al/($Al_2O_3$)/PMMA:BCP:TCNQ[1:1:0.5 wt%]/Al configuration demonstrated bistable and switching characteristics similar to Ovshinsky switching with a low threshold voltage and a high ON/OFF ratio. An analysis of the current-voltage curves of the device suggested that electrical switching took place due to the charge transfer mechanism.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.403-404
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• 2012

We fabricated TFT devices with the GeSe channel. A single device consists of a Pt source and drain, a Ti glue layer and a GeSe chalcogenide channel layer on SiO2/Si substrate which worked as the gate. We confirmed the drain current with variations of gate bias and channel size. The I-V curves of the switching device are shown in Fig. 1. The channel of the device always contains amorphous state, but can be programmed into two states with different threshold voltages (Vth). In each state, the device shows a normal Ovonic switching behavior. Below Vth (OFF state), the current is low, but once the biasing voltage is greater than Vth (ON state), the current increases dramatically and the ON-OFF ratio is high. Based on the experiments, we draw the conclusion that the gate voltage can enhance the drain current, and the electric field by the drain voltage affects the amorphous-amorphous transition. The switching device always contains the amorphous state and never exhibits the Ohmic behavior of the crystalline state.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.280-281
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• 2011

We fabricated the devices of TFT type with the amorphous chalcogenide channel. A single device consists of a Pt source and drain, a Ti glue layer and a GeSe chalcogenide channel layer on SiO2/Si substrate which worked as the gate. We confirmed the drain current with variations of gate bias and channel size. The I-V curves of the switching device are shown in Fig. 1. The channel of the device always contains amorphous state, but can be programmed into two states with different threshold voltages (Vth). In each state, the device shows a normal Ovonic switching behavior. Below Vth (OFF state), the current is low, but once the biasing voltage is greater than Vth (ON state), the current increases dramatically and the ON-OFF ratio is about 4 order. Based on the experiments, we contained the conclusion that the gate voltage can enhance the drain current, and the electric field by the drain voltage affects the amorphous-amorphous transition. The switching device always contains the amorphous state and never exhibits the Ohmic behavior of the crystalline state.

• Proceedings of the IEEK Conference
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• 2002.07c
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• pp.1440-1443
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• 2002

In this paper, we investigate the throughput improvement of an adaptive M-ary quadrature modulation (AMQAM) scheme by using new switching thresh-olds over slow frequency nonselective Nakagami-m fading channels. The new switching thresholds are obtained by using the approximated BER expressions with complimentary error functions for each modulation scheme given in AWGN channels. By using the new switching thresholds, we can improve the maximum system throughput. For example, we get the maximum throughput improvement about 0.32 when tile target BER is 10$\^$-3/ and the fading figure m = 3.