• Journal of Information Display
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• v.2 no.3
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• pp.32-38
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• 2001

The most important parameter for TV application of LCD is a fast switching time for the display of moving image. To achieve faster switching time, the novel LC single materials with large dielectric anisotropies ($16{\sim}20$), high clearing temperatures ($195.5{\sim}237.4^{\circ}C$), broad nematic ranges (up to 169.9 $^{\circ}C$) and high birefringence ($0.254{\sim}0.2200$) were developed. KUR-series LC mixtures blended these single materials having significantly higher clearing temperatures and dielectric anisotropy values compared with conventional LC mixture. Especially, their clearing temperatures are $10{\sim}30^{\circ}C$ higher than their host mixture. These LC mixtures showing about lOms of high-speed switching time in Tv/Monitor of TFT LCD, is short enough to be addressed in a single time frame of 60Hz (16.7 ms). The threshold voltage $V_{th}$ was low enough to operate at a driving voltage of 5 V. The VHR values were found to be high enough for TFT-LCD in wide temperature range. Our novel LC mixtures are suitable materials for the inclusion in to LC mixtures for TV application of TN-LCD

• Transactions on Electrical and Electronic Materials
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• v.8 no.2
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• pp.73-78
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• 2007

The crystallization temperature in GeTe solid electrolyte films was improved by in situ-nitrogen doping by rf magnetron co-sputtering technique at room temperature. The crystallization temperature of $250\;^{\circ}C$ in electrolyte films without nitrogen doping increased by approximately $300\;^{\circ}C$, $350\;^{\circ}C$, and above $400\;^{\circ}C$ in films deposited with nitrogen/argon flow ratios of 10, 20, and 30 %, respectively. A PMC memory device with $Ge_{45}Te_{55}$ solid electrolytes deposited with nitrogen/argon flow ratios of 20 % shows reproducible memory switching characteristics based on resistive switching at threshold voltage of 1.2 V with high $R_{off}/R_{on}$ ratios. Nitrogen doping into the silver saturated GeTe electrolyte films improves the crystallization temperature of electrolyte films and does not appear to have a negative impact on the switching characteristics of PMC memory devices.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.11
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• pp.785-789
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• 2013

Silicon Carbide (SiC) is the material with the wide band-gap (3.26 eV), high critical electric field (~2.3 MV/cm), and high bulk electron mobility (~900 $cm^2/Vs$). These electronic properties allow attractive features, such as high breakdown voltage, high-speed switching capability, and high temperature operation compared to Si devices. In general, device design has a significant effect on the switching and electrical characteristics. It is known that in this paper, we demonstrated that the switching performance and breakdown voltage of IGBT is dependent with doping concentration of p-base region and drift layer by using 2-D simulations. As a result, electrical characteristics of SiC-IGBT deivce is higher breakdown voltage ($V_B$= 1,600 V), lower on-resistance ($R_{on}$= 0.43 $m{\Omega}{\cdot}cm^2$) than Si-IGBT. Also, we determined that processing time and cost is reduced by the depth of n-drift region of IGBT was reduced.

• Korean Journal of Optics and Photonics
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• v.9 no.4
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• pp.231-235
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• 1998

Passively Q-switched, laser diode(LD) end-pumped Nd:YAG laser was demonstrated by using $Cr^{4+}$:YAG as a saturable absorber. In addition , we could calculate an excitation efficiency, which is an important parameter to evaluate the pumping geometry, directly by measuring the absorbed power in Nd:YAG at threshold condition. We found that output parameters such as average power, pulse duration, and repetition rate strongly depended on the low intensity transmission of $Cr^{4+}$:YAG and driving current of lase diode. The maximum Q-switched output power of 1 W was obtained with 40 kHz repetition rate. The pulse duration was varied from 50 ns to 200 ns.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.11 no.7
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• pp.3747-3765
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• 2017

Existing authentication mechanisms in cellular mobile communication networks are realized in the upper layer by employing cryptographic techniques. Authentication data are broadcasted over the air in plaintext, enabling attackers to completely eavesdrop on the authentication and get some information about the shared secret key between legitimate nodes. Therefore, reusing the same secret key to authenticate several times results in the secret key's information leakage and high attacking rate. In this paper, we consider the most representative authentication mechanism, Authentication and Key Agreement (AKA), in cellular communication networks and propose an enhanced AKA scheme based on Physical Layer Authentication (AKA-PLA). Authentication responses generated by AKA are no longer transmitted in plaintext but masked by wireless channel characteristics, which are not available to adversaries, to generate physical layer authentication responses by a fault-tolerant hash method. The authenticator sets the threshold according to the authentication requirement and channel condition, further verifies the identity of the requester based on the matching result of the physical layer authentication responses. The performance analyses show that the proposed scheme can achieve lower false alarm rate and missing rate, which are a pair of contradictions, than traditional AKA. Besides, it is well compatible with AKA.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.8 no.12
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• pp.4552-4567
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• 2014

A (n,t,n) secret sharing scheme is to share a secret among n group members, where each member also plays a role of a dealer,and any t shares can be used to recover the secret. In this paper, we propose a strong (k,t,n) verifiable multi-secret sharing scheme, where any k out of n participants operate as dealers. The scheme realizes both threshold structure and adversary structure simultaneously, and removes a trusted third party. The secret reconstruction phase is performed using an additive homomorphism for decreasing the storage cost. Meanwhile, the scheme achieves the pre-verification property in the sense that any participant doesn't need to reveal any information about real master shares in the verification phase. We compare our proposal with the previous (n,t,n) secret sharing schemes from the perspectives of what kinds of access structures they achieve, what kinds of functionalities they support and whether heavy storage cost for secret share is required. Then it shows that our scheme takes the following advantages: (a) realizing the adversary structure, (b) allowing any k out of n participants to operate as dealers, (c) small sized secret share. Moreover, our proposed scheme is a favorable candidate to be used in many applications, such as secure multi-party computation and privacy preserving data mining, etc.

• 전기의세계
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• v.24 no.5
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• pp.91-96
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• 1975

In this paper, with a view to study the impurity effect, Ge-Si-Te memory devices are investigated experimentally about the dependence of temperature and frequency. Conductivity depends upon temperature and frequency and it is some-what influenced by heat treatment. With increasing frequency, conductivity has a tendency to be independent of temperature. We found that switching time and threshold voltage are reduced by it.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.499-501
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• 2007

We propose a vertical-alignment liquid crystal display with patterned electrodes using a positive dielectric anisotropic liquid crystal. In this structure, the threshold and on-state voltages are reduced compared with previous vertical-alignment configuration with positive liquid crystal.

• Journal of IKEEE
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• v.12 no.3
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• pp.176-183
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• 2008

The high efficiency power management IC(PMIC) with DTMOS(Dynamic Threshold voltage MOSFET) switching device is proposed in this paper. PMIC is controlled with PWM control method in order to have high power efficiency at high current level. DTMOS with low on-resistance is designed to decrease conduction loss. The control parts in Buck converter, that is, PWM control circuits consist of a saw-tooth generator, a band-gap reference circuit, an error amplifier and a comparator circuit as a block. The Saw-tooth generator is made to have 1.2 MHz oscillation frequency and full range of output swing from ground to supply voltage(VDD:3.3V). The comparator is designed with two stage OP amplifier. And the error amplifier has 70dB DC gain and $64^{\circ}$ phase margin. DC-DC converter, based on Voltage-mode PWM control circuits and low on-resistance switching device, achieved the high efficiency near 95% at 100mA output current. And DC-DC converter is designed with LDO in stand-by mode which fewer than 1mA for high efficiency.

• Journal of the Korean Ceramic Society
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• v.39 no.1
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• pp.92-98
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• 2002

To investigate the electrode structural effect on the ferroelectric electron emission, the electric field distribution in a 2-dimensional structure was calculated as a function of upper electrode diameter, and the switching charge density and emission charge were measured simultaneously. The simulation of the electric field distribution showed that an asymmetric electrode structure could cause a stray field on the bare surface of the ferroelectric cathode near the edge of upper electrode. The distance of stray field from the electrode edge increased with increasing ferroelectric thickness, but it did not depend on the upper electrode diameter. The switching charge density increased more on the cathode with smaller upper electrode diameter. This was attributed to the stray field on the bare ferroelectric surface near the electrode edge, because the stray field for the asymmetric ferroelectric cathode enhanced polarization switching near the electrode edge. From the switching charge density, the distance of stray field from the electrode edge was calculated as about 11-14${\mu}{\textrm}{m}$. The threshold voltage of electron emission was 61-68 kV/cm, which was almost 3 times lager than the coercive voltage. The threshold voltage was not determined just by coercive voltage, but by strength and distance of the stray-field, which largely depended on the geometrical structure of ferroelectric cathode.