• Title/Summary/Keyword: Switching states

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Space Vector Modulation based on Model Predictive Control to Reduce Current Ripples with Subdivided Space Voltage Vectors (전류 리플 저감을 위한 세분화된 공간전압벡터를 이용한 모델 예측 제어 기반의 SVM 방법)

  • Moon, Hyun-Cheol;Lee, June-Seok;Lee, June-Hee;Lee, Kyo-Beum
    • The Transactions of the Korean Institute of Power Electronics
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    • v.22 no.1
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    • pp.18-26
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    • 2017
  • This paper proposes the model predictive control with space vector modulation (SVM) method for current control of voltage-source inverter. Unlike the conventional method using a limited number of voltage vectors by switching states, the proposed method can consider various voltage vectors to identify the optimized voltage vector. The various voltage vectors are obtained by subdividing existing voltage vectors. The optimized voltage vector that minimizes the cost function is selected and applied to the inverter by using the SVM. The various voltage vectors and SVM reduce current ripples in the output AC side of the inverter compared with the conventional method. The effectiveness and performance of the proposed method are verified through simulation and experiment with a three-phase two-level voltage-source grid-connected inverter.

Fault Prognostics of a SMPS based on PCA-SVM (PCA-SVM 기반의 SMPS 고장예지에 관한 연구)

  • Yoo, Yeon-Su;Kim, Dong-Hyeon;Kim, Seol;Hur, Jang-Wook
    • Journal of the Korean Society of Manufacturing Process Engineers
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    • v.19 no.9
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    • pp.47-52
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    • 2020
  • With the 4th industrial revolution, condition monitoring using machine learning techniques has become popular among researchers. An overload due to complex operations causes several irregularities in MOSFETs. This study investigated the acquired voltage to analyze the overcurrent effects on MOSFETs using a failure mode effect analysis (FMEA). The results indicated that the voltage pattern changes greatly when the current is beyond the threshold value. Several features were extracted from the collected voltage signals that indicate the health state of a switched-mode power supply (SMPS). Then, the data were reduced to a smaller sample space by using a principal component analysis (PCA). A robust machine learning algorithm, the support vector machine (SVM), was used to classify different health states of an SMPS, and the classification results are presented for different parameters. An SVM approach assisted by a PCA algorithm provides a strong fault diagnosis framework for an SMPS.

Research on the Mechanism of Neutral-point Voltage Fluctuation and Capacitor Voltage Balancing Control Strategy of Three-phase Three-level T-type Inverter

  • Yan, Gangui;Duan, Shuangming;Zhao, Shujian;Li, Gen;Wu, Wei;Li, Hongbo
    • Journal of Electrical Engineering and Technology
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    • v.12 no.6
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    • pp.2227-2236
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    • 2017
  • In order to solve the neutral-point voltage fluctuation problem of three-phase three-level T-type inverters (TPTLTIs), the unbalance characteristics of capacitor voltages under different switching states and the mechanism of neutral-point voltage fluctuation are revealed. Based on the mathematical model of a TPTLTI, a feed-forward voltage balancing control strategy of DC-link capacitor voltages error is proposed. The strategy generates a DC bias voltage using a capacitor voltage loop with a proportional integral (PI) controller. The proposed strategy can suppress the neutral-point voltage fluctuation effectively and improve the quality of output currents. The correctness of the theoretical analysis is verified through simulations. An experimental prototype of a TPTLTI based on Digital Signal Processor (DSP) is built. The feasibility and effectiveness of the proposed strategy is verified through experiment. The results from simulations and experiment match very well.

A Fault Diagnosis Method in Cascaded H-bridge Multilevel Inverter Using Output Current Analysis

  • Lee, June-Hee;Lee, June-Seok;Lee, Kyo-Beum
    • Journal of Electrical Engineering and Technology
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    • v.12 no.6
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    • pp.2278-2288
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    • 2017
  • Multilevel converter topologies are widely used in many applications. The cascaded H-bridge multilevel inverter (CHBMI), which is one of many multilevel converter topologies, has been introduced as a useful topology in high and medium power. However, it has a drawback to require a lot of switches. Therefore, the reliability of CHBMI is important factor for analyzing the performance. This paper presents a simple switch fault diagnosis method for single-phase CHBMI. There are two types of switch faults: open-fault and short-fault. In the open-fault, the body diode of faulty switch provides a freewheeling current path. However, when the short-fault occurs, the distortion of output current is different from that of the open-fault because it has an unavailable freewheeling current flow path due to a disconnection of fuse. The fault diagnosis method is based on the zero current time analysis according to zero-voltage switching states. Using the proposed method, it is possible to detect the location of faulty switch accurately. The PSIM simulation and experimental results show the effectiveness of proposed switch fault diagnosis method.

A VSR $\bar{X}$ Chart with Multi-state VSS and 2-state VSI Scheme

  • Lee, Jae-Heon;Park, Chang-Soon
    • Journal of Korean Society for Quality Management
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    • v.32 no.4
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    • pp.252-264
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    • 2004
  • Variable sampling Interval (VSI) control charts vary the sampling interval according to value of the control statistic while the sample size is fixed. It is known that control charts with 2-state VSI scheme, which uses only two sampling intervals, give good statistical properties. Variable sample size (VSS) control charts vary the sample size according to value of the control statistic while the sampling interval is fixed. In the VSS scheme no optimal results are known for the number of sample sizes. It is also known that the variable sampling rate (VSR) $\bar{X}$ control chart with 2-state VSS and 2-state VSI scheme leads to large improvements In performance over the fixed sampling rate (FSR) $\bar{X}$ chart, but the optimal number of states for sample size Is not known. In this paper, the VSR Χ charts with multi-state VSS and 2-state VSI scheme are designed and compared to 2-state VSS and 2-state VSI scheme. The multi-state VSS scheme is considered to, achieve an additional improvement by switching from the 2-state VSS scheme. On the other hand, the multi-state VSI scheme is not considered because the 2-state scheme is known to be optimal. The 3-state VSS scheme improves substantially the sensitivity of the $\bar{X}$ chart especially for small and moderate mean shifts.

Coordinated Voltage and Reactive Power Control Strategy with Distributed Generator for Improving the Operational Efficiency

  • Jeong, Ki-Seok;Lee, Hyun-Chul;Baek, Young-Sik;Park, Ji-Ho
    • Journal of Electrical Engineering and Technology
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    • v.8 no.6
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    • pp.1261-1268
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    • 2013
  • This study proposes a voltage and reactive coordinative control strategy with distributed generator (DG) in a distribution power system. The aim is to determine the optimum dispatch schedules for an on-load tap changer (OLTC), distributed generator settings and all shunt capacitor switching on the load and DG generation profile in a day. The proposed method minimizes the real power losses and improves the voltage profile using squared deviations of bus voltages. The results indicate that the proposed method reduces the real losses and voltage fluctuations and improve receiving power factor. This paper proposes coordinated voltage and reactive power control methods that adjust optimal control values of capacitor banks, OLTC, and the AVR of DGs by using a voltage sensitivity factor (VSF) and dynamic programming (DP) with branch-and-bound (B&B) method. To avoid the computational burden, we try to limit the possible states to 24 stages by using a flexible searching space at each stage. Finally, we will show the effectiveness of the proposed method by using operational cost of real power losses and voltage deviation factor as evaluation index for a whole day in a power system with distributed generators.

A Critique of Designing Resource Adequacy Markets to Meet Loss of Load Probability Criterion

  • Yoon, Yong T.;Felder, Frank A.
    • KIEE International Transactions on Power Engineering
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    • v.3A no.1
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    • pp.35-41
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    • 2003
  • To ensure resource adequacy in restructured electricity markets, policymakers have adopted installed capacity (ICAP) markets in some regions of the United States. These markets ensure that adequate generation exists to satisfy regional Loss of Load Probability(LOLP) criterion. Since the incentives created through ICAP mechanisms directly impact new generation and transmission investment decisions we examine one important factor that links ICAP markets with LOLP calculations;, determining the amount of ICAP credit assigned to particular generation units. First, we review and critique the literature on electric power systems' market failure resulting from demand exceeding supply. We then summarize the method of computing (the LOLP) as a means of assessing reliability and relate this method to ICAP markets. We find that only the expected value of available generation is used In current ICAP markets while ignoring the second and higher order moments, which tends to mis-state the ICAP value of a specific resource. We then consider a proposal whose purpose is to avoid this ICAP assignment issue by switching from ICAP obligations to options. We find that such a proposal may fail to not provide the benefits claimed and suffers from several practical difficulties. Finally, we conclude with some policy recommendations and areas for future research.

Effect of Sputtering Working Pressure on the Optical and Electrical Properties of InZnO Thin-Film Transistors (스퍼터링 공정 압력이 InZnO 박막트랜지스터의 광학 및 전기적 특성에 미치는 영향)

  • Park, Ji-Min;Kim, Hyoung-Do;Jang, Seong Cheol;Kim, Hyun-Suk
    • Korean Journal of Materials Research
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    • v.30 no.4
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    • pp.211-216
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    • 2020
  • Amorphous In-Ga-Zn-O (a-IGZO) thin film transistors, because of their relatively low mobility, have limits in attempts to fulfill high-end specifications for display backplanes. In-Zn-O (IZO) is a promising semiconductor material for high mobility device applications with excellent transparency to visible light region and low temperature process capability. In this paper, the effects of working pressure on the physical and electrical properties of IZO films and thin film transistors are investigated. The working pressure is modulated from 2 mTorr to 5 mTorr, whereas the other process conditions are fixed. As the working pressure increases, the extracted optical band gap of IZO films gradually decreases. Absorption coefficient spectra indicate that subgap states increase at high working pressure. Furthermore, IZO film fabricated at low working pressure shows smoother surface morphology. As a result, IZO thin film transistors with optimum conditions exhibit excellent switching characteristics with high mobility (≥ 30㎠/Vs) and large on/off ratio.

Photofield-Effect in Amorphous InGaZnO TFTs

  • Fung, Tze-Ching;Chuang, Chiao-Shun;Mullins, Barry G.;Nomura, Kenji;Kamiya, Toshio;Shieh, Han-Ping David;Hosono, Hideo;Kanicki, Jerzy
    • 한국정보디스플레이학회:학술대회논문집
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    • 2008.10a
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    • pp.1208-1211
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    • 2008
  • We study the amorphous In-Ga-Zn-O thin-film transistors (TFTs) properties under monochromatic illumination ($\lambda=420nm$) with different intensity. TFT off-state drain current ($I_{DS_off}$) was found to increase with the light intensity while field effect mobility ($\mu_{eff}$) is almost unchanged; only small change was observed for sub-threshold swing (S). Due to photo-generated charge trapping, a negative threshold voltage ($V_{th}$) shift is also observed. The photofield-effect analysis suggests a highly efficient UV photocurrent conversion in a-IGZO TFT. Finally, a-IGZO mid-gap density-of-states (DOS) was extracted and is more than an order lower than reported value for a-Si:H, which can explain a good switching properties of the a-IGZO TFTs.

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A Very Short Vertical Directional Coupler Switch with Polarization Independent Very High Extinction Ratios (편광에 관계없이 매우 높은 소멸비와 짧은 길이를 가지는 수직 방향성 결합기 스위치)

  • Jung Byung-Min;Kim Boo-Gyoun
    • Korean Journal of Optics and Photonics
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    • v.15 no.6
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    • pp.503-510
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    • 2004
  • We propose a novel vertical directional coupler switch using a vertical directional coupler with polarization independent coupling lengths employing the doublesided deep-ridge waveguide structure. This switch is composed of a switching operation induced section with symmetric structures and an extinction ratio enhanced section with asymmetric structures. We present design methods and examples for this switch with very short lengths and very high extinction ratios larger than 30 dB for both TE and TM modes in cases of both cross and bar states.