• 제어로봇시스템학회:학술대회논문집
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• 1989.10a
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• pp.535-540
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• 1989

This paper presents an approach for designing a linear multivariable servo mechanism for the case of constant and time varying disturbances. In this paper, we use an "observer-based" approach to consider the disturbance vector as states of the system and the resulting servomechanism design involves the design of an asymptotic observer which estimates both the actual plant states and the disturbance states. The design makes use of switching dynamics instead of switching logics to obtain the sliding mode and from the switching dynamics we can remove the undesirable chattering phenomena.phenomena.

• 전기의세계
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• v.28 no.3
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• pp.57-64
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• 1979

The static state estimation are divided into two groups; estimation and detection & identification. This paper centers on detection and identification algorithm. Especially, the identification of line errors is focused on and is performed by the extended W.L.S. algorithm with line swithching states. Here, line switching states mean the discrete values of line admittance which are influenced by unexpected line switching. The numerical results are obtained from the assumption that the noise vector is independent zero mean Gaussian random variables.

• Proceedings of the KIPE Conference
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• 2001.10a
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• pp.438-442
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• 2001

Much attention has given to EMI effects created by variable speed ac drive system. This paper focuses on the switching technique to mitigate common mode voltage. Zero switching states of inverter control invoke large common mode voltage. Using inversed carrier wave, zero switching states are removed. In addition, proposed technique is easy to apply to existing 2-level inverter design. And common mode mitigation technique for sinusoidal PWM is also presented. Proposed switching technique is implemented with a 2.2kw 1735rpm induction motor.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.370-370
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• 2010

The effects of adding higher-valence impurities on the bipolar resistive switching characteristics of Pt/$NiO_{1+x}$/TiN MIM stacks and physical properties were investigated. $NiO_{1+x}$ films with 14% W deposited at 20% oxygen partial pressure exhibited the bipolar resistance switching characteristics in Pt/$NiO_{1+x}$/TiN MIM stacks, while $NiO_{1+x}$ films with 8.2% W show unipolar resistance switching behavior. The relationship of W-doping and the crystallinity was studied by X-ray diffraction. The metallic Ni contents and $WO_x$ binding states with W amount was investigated by XPS. Our result showed that the metallic Ni, $WO_x$ binding states, and crystallinity in $NiO_{1+x}$ played an important role on the bipolar resistive switching.

• 전기의세계
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• v.21 no.3
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• pp.31-40
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• 1972

This study intends to investigate the optimal switching modes of a double-capacitive thermal system under different constraints on the state and the control variable, by the application of the Pontryagin's Minimum Principle. Throughout the development, the control effort is assumed to have two modes of state: M or zero and the terminal times being fixed. In the first part of this study, the Principle is discussed under various conditions for this particular problem, with different criterion functions and in the same time imposing a certain constraints; i) on the terminal states, ii) on functions of the terminal states. Depending upon the upper bound value of the control vector, possible driving modes of the states are studied from which particular optimal driving modes are extracted so as to meet the specified constraints and boundary conditions imposed in the problem. Numerical solutions are evaluated for an over0damped, double-capacitive thermal plant and the optimal solutions: the switching mode, the optimal switching time, and the control effort are compared with the analytical results, in the second part of this work, to confirm the development.

• Proceedings of the KIPE Conference
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• 2001.07a
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• pp.434-437
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• 2001

Much attention has given to EMI effects created by variable speed ac drive system. This paper focuses on the switching technique to mitigate common mode voltage. Zero switching states of inverter control invoke large common mode voltage. Using inversed carrier wave, zero switching states are removed. In addition, proposed technique is easy to apply to existing 2-level inverter design. Simulation results show that common mode voltages adapting proposed technique are reduced regarding conventional method.

• Management Science and Financial Engineering
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• v.19 no.1
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• pp.49-52
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• 2013

In this paper we provide a valuation formula for a variance swap with regime switching. A variance swap is a forward contract on variance, the square of realized volatility of the underlying asset. We assume that the volatility of underlying asset is governed by Markov regime-switching process with finite states. We find that the proposed model can provide ease of calculation and be superior to the models currently available.

• Journal of the Microelectronics and Packaging Society
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• v.13 no.2 s.39
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• pp.15-19
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• 2006

The resistance switching characteristics of amorphous $SiO_2$ and poly-crystalline $TiO_2$ were investigated. Both films exhibit well defined switching characteristics with low and high resistance states. From I-V curve analyses, it was found that the low resistance states of both films obey an ohmic conduction mechanism and the high resistance states show generation of a Schottky potential barrier. Regarding the mechanism for resistance switching of the binary oxide, it is suggested that the generation and annihilation of potential barriers accounts for the changes to the high resistance state and low resistance state, respectively. The device operation characteristic parameters such as reset and set voltages of $TiO_2$ are distinctly smaller than those of $SiO_2$, indicating that the values are related to the dielectric constant.

• ETRI Journal
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• v.24 no.2
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• pp.109-116
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• 2002

We propose a novel very short (< $300{\mu}m$) vertical directional coupler switch with high extinction ratios larger than 30 dB. The device consists of a switching operation induced section (SOIS), an extinction ratio adjusted section (ERAS), and an extinction ratio enhanced section (ERES). These are achieved by changing the refractive index of one core. The switching operation is induced by changing the refractive index of one core in the SOIS. The improvement of extinction ratios larger than 30 dB for both the cross and bar states is made by controlling the asymmetry of the refractive indices of both cores in the ERES. Through the ERAS, different extinction ratios between the cross and bar states at the end of the SOIS are changed to the same value. For this reason, the optimum asymmetry of the refractive indices of the cores for the maximum extinction ratios and the lengths of ERES are the same for cross and bar states. Design guidelines for high extinction ratios with large tolerances are presented.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.44 no.7
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• pp.901-907
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• 1995

The switching characteristics of As$_{10}$ Ge$_{15}$ Te$_{75}$ thin film were investigated under d.c. bias. And the frequency dependence of the conductivity was analysed with regard to the temperature dependence, in order to find the physical properties of the As$_{10}$ Ge$_{15}$ Te$_{75}$ thin film ; a characteristic relaxation time (.tau.$_{0}$ ), the spatial density of defect states (N), and the localized wavefunction (.alpha.$^{-1}$ ). It was formed that the threshold voltage depends on thickness, electrode distance, annealing time and temperature, respectively. The threshold voltage is increased as the thickness and the electrode distance is increased, while the threshold voltage is decreased in proportion to the increased annealing time and temperature.