• Proceedings of the KSR Conference
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• 2008.06a
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• pp.1853-1859
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• 2008

IGBT modules are designed for low loss, rugged for all environments and user friendly. Low on state saturation voltage with high switching speed is the primary concerns. In this paper selection of IGBT, module ratings and characteristics are discussed. The IGBT design topic of protection against over voltage and over current are covered. Emphasis on turn off switching, short circuit switching and necessary precautions are dealt. Selection of IGBT device, gate drive power, and its lay out considerations are covered in detail.

• Journal of Power Electronics
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• v.4 no.1
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• pp.56-63
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• 2004

A new driving circuit for the SPSS (Single-Pulse Soft-Switching) PFC converter is proposed. The switching device of a SPSS converter switches once in every half cycle of an AC commercial power source. Therefore, it can be solved many problems caused by the high frequency operation. The proposed SPSS converter achieves the soft-switching operation and the EMI noise can be reduced. The resonant capacitor voltage supplies to the resonant inductor even if the input AC voltage is the vicinity of zero cross voltage. Then, the power factor and input current waveform can be improved without delay time. A new driving circuit achieves the operation of SPSS converter by one switching drive circuit. The proposed converter can be satisfied the IEC standard sufficiently

• Journal of the Korean Institute of Telematics and Electronics S
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• v.34S no.9
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• pp.118-125
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• 1997

This paper proposed a new partial resonant 3.PHI. AC-DC boost converter of high efficiency using lossless snubber. The proposed converter, DCM (Discontinuous Current Mode) has a merit of simple controlled circuit because the input current control discontinuously. But turned off switching loss and stress of the switching device increase when the switch turned off at the peak of current. Therefore, the paper improves efficiency by adopting the PRS$^{2}$(Partial Resonant Soft Switching) in 3.PHI. AC-DC boost converter and makes the unity power factor. The PRS$^{2}$ is reduced a current/voltage stresses of switching devices. Also, a DCMPRS$^{2}$M(Discontinuous Conduction Mode Partial Resonant Soft Switching Method) appear the current and voltage equation of this circuit. The paepr examine in a 3.PHI. AC-DC boost converter and show the result of that.

• Proceedings of the KIPE Conference
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• 2003.07b
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• pp.1002-1007
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• 2003

A new driving circuit for the SPSS (Single-Pulse Soft-Switching) PFC converter is proposed. The switching device of a SPSS converter switches once In every half cycle of an AC commercial power source. Therefore, it can be solved many problems caused by the high frequency operation. The proposed SPSS converter achieves the soft-switching operation and the EMI noise can be reduced. The resonant capacitor voltage supplies to the resonant inductor even if the input AC voltage is the vicinity of zero cross voltage. Then, the power factor and input current waveform can be improved without delay time. A new driving circuit achieves the operation of SPSS converter by one switching drive circuit. The proposed converter can be satisfied the IEC standard sufficiently.

• Journal of Power Electronics
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• v.18 no.6
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• pp.1901-1911
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• 2018

This study presents a circuit model for simulating the switching transients of insulated-gate bipolar transistors (IGBTs) with inductive load switching. The modeling approach used in this study considers the behavior of IGBTs and freewheeling diodes during the transient process and ignores the complex semiconductor physics-based relationships and parameters. The proposed circuit model can accurately simulate the switching behavior due to the detailed consideration of device-circuit interactions and the nonlinear nature of model parameters, such as internal capacitances. The developed model is incorporated in an IGBT loss calculation module of an electromagnetic transient simulation program to enable the estimation of switching losses in voltage source converters embedded in large power systems.

• Proceedings of the KSR Conference
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• 2009.05b
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• pp.623-628
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• 2009

There is an increasing demand for efficient high power/weight auxiliary power supplies for use on high speed traction application. Many new conversion techniques have been proposed to reduce the voltage and current stress of switching components, and the switching losses in the traditional pulse width modulation(PWM) converter. Especially, the phase shift full bridge zero voltage switching PWM techniques are thought most desirable for many applications because this topology permits all switching devices to operate under zero voltage switching(ZVS) by using circuit parasitic components such as leakage inductance of high frequency transformer and power device junction capacitance. The proposed topology is found to have higher efficiency than conventional soft-switching converter. Also it is easily applicable to phase shift full bridge converter by applying an energy recovery snubber consisted of fast recovery diodes and capacitors.

• Proceedings of the KSR Conference
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• 2008.11b
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• pp.321-324
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• 2008

Recently, there is an increasing demand for efficient high power/weight auxiliary power supplies for use on high speed traction application. many new conversion techniques have been proposed to reduce the voltage and current stress of switching components, and the switching losses in the traditional pulse width modulation(PWM) converter. Among them, the phase shift full bridge zero voltage switching PWM techniques are thought most desirable for many applications because this topology permits all switching devices to operate under zero voltage switching(ZVS) by using circuit parasitic components such as leakage inductance of high frequency transformer and power device junction capacitance. The proposed topology is found to have higher efficiency than conventional soft-switching converter. Also it is easily applicable to phase shift full bridge converter by applying an energy recovery snubber consisted of fast recovery diodes and capacitors.

• Proceedings of the IEEK Conference
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• 1998.10a
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• pp.815-818
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• 1998

The Insulated Gate Bipolar Transistor has the characteristics of MOSFET and BJT. The characteristics of proposed device exhibit high speed switching, the voltage controlled property, and the low ON resistance. This hybrid device has been used and developed continuously in the power electronic engineering field. We can simulate many IGBT circuits, such as the motor drive circuit, the switching circuits etc, with PSpice. However, some problems in PSpice is that the IGBT is old-fashioned and is very difficult to get it. In this paper, the IGBT in PSpice is considered as the basic structure. We changed the valuse of base width, gate-drain overlaping area, device area, and doping concentration, then calculated MOS transconductance, ambipolar recombination lifetime etc. Using this resultant parameter, we could predict the transient response characteristicsof IGBT, for examplex, voltage overshoot, the rising curve of voltage, and the falling curve of current.

• Journal of KIISE:Computing Practices and Letters
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• v.16 no.12
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• pp.1209-1213
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• 2010

This paper presents a technique for an Android mobile device to best utilize its surrounding external display device such as high-definition TV, in order to overcome the size and resolution limitation of the small LCD in the mobile device. Unlike current techniques that simply expand the LCD screen image to an external large display, our technique dynamically changes the resolution adapting to capability of the external display. And, the original screen become a remote controller.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.22-23
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• 2006

Proton irradiation technology was used for improvement of switching characteristics of the PT-IGBT. Proton irradiation was carried out at 5.56 MeV energy with $1{\times}10^{12}/cm^2$ doze from the back side of the wafer. Characterization of the device was performed by I-V, breakdown voltage, threshold voltage, and turn-off delay time measurement. For irradiated device by 5.56 MeV energy, the breakdown voltage and the threshold voltage were 730 V and 6.5~6.6 V, respectively. The turn-off time has been reduced to 170 ns, which was original $6\;{\mu}s$ for the un-irradiated device.