• Journal of the Korean Society for Railway
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• v.15 no.3
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• pp.244-250
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• 2012

In this paper, The next Generation High Speed Railway Inverter system using RCF-PWM(Random Carrier Frequency Pulse Width Modulation) was developed to reduce electromagnetic noise. RCF-PWM method is randomized the switching frequency in the range between Semiconductor switching devices' maximum switching frequency and minimum switching frequency, Simulation program has been built using MATLAB/Simulink to verify the validity of study. Finally, the simulation results of Next Generation High Speed Railway inverter system using the RCF method was compared with the conventional SVPWM method.

• Proceedings of the KIEE Conference
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• 2001.07e
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• pp.127-133
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• 2001

In SRM drive, the ON OFF angles of each phase switch should be accurately controlled in order to control the torque and speed stably. The accuracy of the switching angles is dependent upon the resolution of the encoder and the sampling period of the microprocessor, that are used to provide the information of the rotor position and to control the SRM power circuit, respectively. However, as the speed increases, the amount of the switching angle deviation from the preset values is also increased. Therefore, the low cost encoder suitable for the practical and stable SRM drive is proposed and the control algorithm to provide the switching signals using the simple digital logic circuit is also presented in this paper. As a result, a stable high speed SRM drive can be achieved by the high resolution switching angle control and it is verified from the experiments that the proposed encoder and logic controller can be a powerful candidate for the practical low cost SRM drive.

• ETRI Journal
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• v.38 no.1
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• pp.133-140
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• 2016

This paper presents a method of parasitic inductance reduction for high-speed switching and high-efficiency operation of a cascode structure with a low-voltage enhancement-mode silicon (Si) metal-oxide-semiconductor field-effect transistor (MOSFET) and a high-voltage depletion-mode gallium nitride (GaN) fielde-ffect transistor (FET). The method is proposed to add a bonding wire interconnected between the source electrode of the Si MOSFET and the gate electrode of the GaN FET in a conventional cascode structure package to reduce the most critical inductance, which provides the major switching loss for a high switching speed and high efficiency. From the measured results of the proposed and conventional GaN cascode FETs, the rising and falling times of the proposed GaN cascode FET were up to 3.4% and 8.0% faster than those of the conventional GaN cascode FET, respectively, under measurement conditions of 30 V and 5 A. During the rising and falling times, the energy losses of the proposed GaN cascode FET were up to 0.3% and 6.7% lower than those of the conventional GaN cascode FET, respectively.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.23 no.4
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• pp.143-148
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• 2023

Among the characteristics of SRM, due to nonlinearity, it is difficult to properly operate to form maximum torque and minimum torque pulsation. In addition, in the case of fixed switching angle control, torque formation according to speed variation is unstable, thereby reducing efficiency. Therefore, active switching angle control according to speed variation is required. Therefore, active switching angle control according to speed variation is required. In this paper, a method for improving driving performance by reducing torque ripple by automatic control of the advance angle and increasing output torque was sought from the problem caused by the nonlinearity of the SRM. In addition, the optimal operation of SRM due to the switching variable according to the performance of the hysteretic current controller was examined.

• Proceedings of the KIEE Conference
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• 1996.07a
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• pp.616-618
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• 1996

This paper presents an unipolar PWM which commutated switching device only in a half period. This method reduced switching loss significantly because of decreasing switching number in n period. In high speed motor drive needed high frequency above 300 Hz fundamental frequency, this method is suited very well. This paper described the principle of unipolar PWM method, analyzed harmonic spectrum and compared with bipolar PWM, Modified PWM and Overmodulation method in switching loss.

• Journal of Internet Computing and Services
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• v.8 no.5
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• pp.161-170
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• 2007

The proposed switch which has separated data plane and switching plane can make parallel processing for packet data storing, memory address pointer switching and simultaneously can be capable of switching the variable length for IP packets. The proposed architecture does not require the complicated arbitration algorithms in VOQ, also is designed for QoS of generic output queue switch as well as input queue. At the result of simulations, the proposed architecture has less average packet delay than the one of the memory-sharing based architecture and guarantees keeping a certain average packet delay in increasing switch size.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.51 no.1
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• pp.10-17
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• 2002

Due to the development of information communication field, the interest of the SMPS(Switched Mode Power Supply) is increased. The size and weight of SMPS are decided by inductor, capacitor and transformer. Thus, the low loss converter which is operated in high speed switching is required. The resonant FB DC-DC converter is able to operate in high speed switching and apply to high power field because the switching loss is low. In this thesis, it is proposed to control strategy for constant output power of resonant FB DC-DC converter in variable input voltage. The proposed control system is a digital I-PD type control and apply to phase-shift resonant type controller. The output voltage tracks reference without steady state error in variable input voltage. The validity of proposed control strategy is verified from results of simulation and experiment.

• Proceedings of the KIEE Conference
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• 1994.11a
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• pp.156-158
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• 1994

In recent days, the various adjustable speed drives are widely employed at the industrial applications for the purpose of energy saving and speed control. In particular, for the machine control applications. the switching frequency is required to be increased for better dynamic performance of the drive. Moreover, this also leads to the reduction of the switching loss of the device. For IGBT (Insulated Gate Bipolar Transistor), the most widely used switching device in the inverters below the 100[kW] range, the falling and falling time is of the order about $200{\sim}300[ns]$. Therefore unexpected phenomena occurs such as voltage spikes due to high gradient of current at the switching instant, the weakening of motor insulation due to high gradient of voltage. In this paper, a new voltage gradient suppression technique is presented in both theoretically and experimentally.

• Proceedings of the KIEE Conference
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• 1992.07b
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• pp.1133-1135
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• 1992

This paper describes high frequency inverter using zero voltage switching(ZVS). The ZVS operation is achieved to reduce the switching stress and switching loss under high speed switching. The proposed circuit configuration and performance are discussed. Its operation characteristics are evaluated through computer-aided simulation.

• Journal of the Korean Vacuum Society
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• v.13 no.1
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• pp.14-21
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• 2004

It is essential to increase the switching speed of power devices to reduce the energy loss because high frequency is commonly used in power device operation these days. In this work electron irradiation has been conducted to reduce the lifetime of minority carriers and thereby to increase the switching speed of a$p^+- n^-$ junction diode. Effects of electron irradiation on the electrical properties of the diode are reported The switching speed is effectively increased. Also the junction leakages and the forward voltage drop which are anticipated to increase are found to be negligible in the $p^+- n^-$ junction diodes irradiated with the optimum energy and dose. The analysis results of DLTS and C-V profiling indicate that the defects induced by electron irradiation in the silicon substrate are donor-like ones which have the energy levels of 0.284 eV and 0.483 eV. Considering all the experimental results in this study, it might be concluded that electron irradiation is a very useful technique in improving the switching speed and thereby reducing the energy loss of $p^+- n^-$ junction diode power devices.