• Transactions on Electrical and Electronic Materials
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• v.17 no.5
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• pp.261-269
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• 2016

A high-performance transmit/receive (T/R) switch is essential for every radio-frequency (RF) device. This paper proposes a T/R switch that is designed in the CEDEC 0.13 μm complementary metal-oxide-semiconductor (CMOS) technology for 2.4 GHz ISM-band RF applications. The switch exhibits a 1 dB insertion loss, a 28.6 dB isolation, and a 35.8 dBm power-handling capacity in the transmit mode; meanwhile, for the 1.8 V/0 V control voltages, a 1.1 dB insertion loss and a 19.4 dB isolation were exhibited with an extremely-low power dissipation of 377.14 μW in the receive mode. Besides, the variations of the insertion loss and the isolation of the switch for a temperature change from - 25℃ to 125℃ are 0.019 dB and 0.095 dB, respectively. To obtain a lucrative performance, an active inductor-based resonant circuit, body floating, a transistor W/L optimization, and an isolated CMOS structure were adopted for the switch design. Further, due to the avoidance of bulky inductors and capacitors, a very small chip size of 0.0207 mm² that is the lowest-ever reported chip area for this frequency band was achieved.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.54 no.5
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• pp.185-189
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• 2005

This paper focuses on the design for Rx/Tx switch module of GSM(global standard mobile) band, characterization of a miniature, low power and dual-band implementation of the front-end switch module with low-pass filer And the effort to make agreement between the simulated design and the measured data for these solutions takes the place through accumulated design and manufacturing data library. We present the design, modeling and measurement of switch module integrating GSM Rx/Tx switching circuit and LPF(low pass filter) on a LTCC(low temperature co-fired ceramic) substrate. For GSM application, insertion and return loss of the low pass filter designed was less than 0.3 dB which was less than 12.7 dB at 900 MHz. The LTCC switch module contained 10 embedded passives and 3 surface mount components integrated on 4.6$\times$4.8$\times$1.2 mm, 6-layer multi-layer integrated circuit. The insertion loss of switch module measured at 900 MHz was 11 dB. In both of the design approach yielded excellent agreement between measured and simulated results.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.48 no.1
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• pp.97-101
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• 2011

Quad band p-HEMT SP6T switch for handset applications was developed. To achieve the low insertion loss and high isolation, trade-off between "On" state and "Off" state was considered by optimization of unit cell. Especially, in case isolation between transmit port and receive port, it was achieved by large capacitors and miniaturization of chip size was achieved by common voltage control and ground using back via process. Designed SP6T switch has size of $950um{\times}100um$ and take into consideration the gate recess error, excellent loss and isolation was confirmed in operating frequency.

• Transactions on Electrical and Electronic Materials
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• v.16 no.4
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• pp.173-178
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• 2015

In lieu of the excellent radio frequency (RF) performance of microelectromechanical system ( MEMS) switches, these micro switches need higher actuation voltage for their operation. This requirement is secondary to concerns over the swtiches’ reliability. This paper reports high reliability operation of RF MEMS switches with low voltage requirements. The proposed switch is optimised to perform in the Q-band, which results in actuation voltage of just 16.4 V. The mechanical stress gradient in the thin micro membrane is computed by simulating von Mises stress in a multi-physics environment that results in 90.4 MPa stress. The computed spring constant for the membrane is 3.02 N/m. The switch results in excellent RF performance with simulated isolation of above 38 dB, insertion loss of less than 0.35 dB and return loss of above 30 dB in the Q-band.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.26 no.10
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• pp.1567-1570
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• 2022

This paper, we presents a RF protection technique of antenna switch by improving the power handling capability in worst case environment mode for mobile phone applications without critical payment of circuit performances such as insertion loss, isolation and ACBV (AC breakdown voltage). By applying a additional capacitive path located in front of the antenna in cell-phone, it performs the effective reduction of input power in high voltage standing wave ratio (VSWR) condition. Under the all-path off condition which causes a high VSWR, it achieved 37.7dBm power handling level as high as 5.7dB compared to that of conventional one at 2GHz. In addition, insertion loss and isolation performances were 0.31dB and 42.72dB at 2 GHz, respectively which were almost similar to that of the conventional circuit. The proposed antenna switch was fabricated in 130nm CMOS SOI technology.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.64 no.3
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• pp.146-152
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• 2015

In this paper, we propose a boost DC-DC converter using a modification of the passive auxiliary resonant snubber circuit with a DC-DC converter in a typical active auxiliary resonant snubber-bridge inverter. The proposed boost DC-DC converter is small compared to the DC-DC converter according to the soft-switching scheme that requires a general auxiliary switch by realizing the soft switching operation as a DC-DC converter which does not require an auxiliary switch. It is light-weight, switch the turn-on and turn-off switching loss at the time of the superposition of the voltage and current is extremely small, so small. And the reduction of the surge voltage and current of the switch. In addition, the proposed boost DC-DC converter has a high efficiency over a wide load characteristics change area than conventional hard switching PWM boost converter using an RC snubber loss.

• Proceedings of the KIEE Conference
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• 2000.07a
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• pp.519-521
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• 2000

Network reconfiguration is an operation task, and consists in the determination of the switching operations such to reach the minimum loss conditions of the distribution network. In this paper, an effective heuristic based switch scheme for loss minimization is given for the optimization of distribution loss reduction and a solution approach is presented. The solution algorithm for loss minimization has been developed based on the two stage solution methodology. The first stage of this solution algorithm sets up a decision tree which represent the various switching operations available, the second stage applies a proposed technique called cyclic best first search. Therefore, the solution algorithm of proposed method can determine on-off switch statuses for loss reduction, with a minimum computational effort.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.64 no.2
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• pp.268-275
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• 2015

This paper proposes a method of switching to improve power loss for the single-phase three-level NPC inverter. The conventional switching methods, which are called as the bipolar and unipolar switching methods, are used for single phase inverters using three-level topology. However, these switching method have disadvantage in the power loss. Because all of the switch are operated. To reduce the power loss of the three-level NPC inverter, clamp switching method is introduced in this paper. This way, one of the lag is fixed that switching loss is reduced. This paper analyzes and compares power losses of unipolar method and clamp method. The validity of the power loss analysis is verified through the simulation and experimental results.

• Journal of the Korean Institute of Telematics and Electronics S
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• v.34S no.8
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• pp.45-55
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• 1997

To design a ATM Switch which ahs advantages in high sped packet switching, it is essential to set multiple paths between input ports and output ports and to design a new packet transfer technique on that paths for decreasing Packet Loss by conflicts in internal Switch Plane. We propose new packet transfer method, Alternate Path Transfer Mechanism by Dynamic Bypass Transfer Method which can solve conflict problem in Banyan network easily. Proposed ATM Switch consists of Banyan networks, Input/Ouput Port, Bypass Link, and Bypass Link Controller. Packets caused conflicts in SEs have another chances of packet transfer over alternate switching planes by using this mechanism.

• Proceedings of the IEEK Conference
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• 2003.11c
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• pp.357-360
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• 2003

In this paper, we investigated the characteristics of 4${\times}$4 thermo-optic switch using two mode interference(TMI) coupler. We designed this matrix switch by using a configuration which combines a double Mach- Zehnder interferometer(MZI) switching unit. The average extinction ratio and average excess loss of the 4${\times}$4 thermo-optic switch was 33.7dB, 0.29dB, respectively.