• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 2003.10a
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• pp.123-126
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• 2003

RSFQ (Rapid Single Flux Quantum) circuits are used in many practical applications. RSFQ DFFC (Delay Flip-Flop with complementary outputs) circuits can be used in a RAM, an ALU (Arithmetic Logic Unit), a microprocessor, and many communication devices. A DFFC circuit has one input, one switch input, and two outputs (output l and output 2). DFFC circuit functions in such way that output 1 follows the input and output 2 is the complement of the input when the switch input is "0." However, when there is a switch input "1."the opposite output signals are generated. In this work, we have designed an RSFQ DFFC circuit based on 1 ㎄/$\textrm{cm}^2$ niobium trilayer technology. As circuit design tools, we used Xic, WRspice, and Lmeter After circuit optimization, we could obtain the bias current margins of the DFFC circuit to be above 32％.

• The Transactions of the Korean Institute of Electrical Engineers D
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• v.52 no.8
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• pp.452-461
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• 2003

The reliability and accuracy of the information on control rod position are very important to the reactor safety and the design of the core protection system. A survey on the RSPT(Reed Switch Position Transmitter) type control rod position indicator system and its actual implementation in the existing nuclear power plants in Korea was performed first. The control rod position indicator having the high performance for SMART was developed on the basis of RSPT technology identified through the survey. The arrangement of permanent magnet and reed switches is the most important procedure in the design of control rod position indicator. The hysteresis of reed switches is one of the important factors in a repeat accuracy of control rod position indicator as well. This paper investigates efficiency of the magnetic flux concentrator and the hysteresis using FEM and verified differences in physicals characteristics by comparing the results of FEM and those of the experiment. As a result, it is shown that the characteristics of prototype control rod position indicator have a good agreement with the results of FEM.

• Proceedings of the KIPE Conference
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• 2002.07a
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• pp.707-710
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• 2002

A 120kV/70A high voltage switch has been installed at Korea Atomic Energy Research Institute in Taejon to supply power with Korea Superconducting Tokamak Advanced Research (KSTAR) Neutral Beam Injection (NBI) system. NBI system requires fast cutoff of the power supply voltage for protection of the grid when arc detected and fast turn-on the voltage for sustaining the beam current. Therefore the high voltage switch and arc current detection circuit are important part of the NBI power supply and there are much need for high voltage solid state switches in NBI system and a broad area of applications. This switch consisted of 100 series connected MOSFETs and adopted the proposed simple and reliable gate drive circuit without bias supply, Various results taken during the commissioning phase with a 100kW resistive load and NBI source are shown. This paper presents the detailed design of 120kV/70A high voltage MOSFETs switch and simple gate drive circuit. Problems with the high voltage switch and gate driver and solutions are also presented.

• Journal of the Korea Society of Computer and Information
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• v.8 no.3
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• pp.100-106
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• 2003

This paper presents the design of a value-added ATM switch. The ATM switch ca perform CAC Processing and Firewall Processing Routine at packet-level (IP) at the ATM environment per port. The proposed two routine are integrated into the components of ATM switch. The Firewall switch employs a suggested two routine model to avoid or reduce the latency caused by filtering. Also, we suggest four classes are defined. namely, classes A, B, C, and D, which are orded from the safest to the most dangerous. The suggested model performance of ATM Firewall switch is estimated simulation in terms of the throught and latency by computer.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1509_1510
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• 2009

This paper presents the design and simulation results of ohmic contact RF MEMS silicon switch with a high isolation at high frequencies along with the position of a contact part, initial off-state and intermediate off-state including the state where a contact part is placed right over a signal line of coplanar waveguide (CPW). The ohmic contact part is connected with comb drives made of high resistivity single crystalline silicon. The released contact part is $30{\mu}m$ apart from the edge of signal line on the glass substrate along the lateral direction (x-direction) at initial off-state. The electrostatic force of the comb electrode creates the x-directional movement thus initial state is converted to the intermediate off-state. The initial off-state of the switch results in isolations of -31 dB, -24 dB and reflections of -0.45 dB, -0.67 dB at 50 GHz and 110 GHz, respectively. It shows the isolation degradation when the contact part moves right over the signal line of CPW like an initial off-state of a conventional MEMS switch. The isolations and reflections are -31 dB, -24 dB and -0.50 dB, -1.31 dB at 50 GHz and 110 GHz, respectively at the intermediate off-state.

• Proceedings of the Acoustical Society of Korea Conference
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• 1998.06e
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• pp.223-226
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• 1998

In the Input Buffer Switch using the intial stage FIFO memory structure, It has pointed the Throughput limitation to the percent of 58.6 due to HOL(Head of Line) blocking in the DBP(Dedicated Buffer with Pointer) method, During that time, To overcome these problems, The prior papers have proposed the complicated Arbitration algorithms and Non-FIFO memory structures. and These showed the improved Throughput. But, Now, To design high speed ATM Switch which need to the tens of Giga bit/s or the tens of Tera bit/s. It has more difficulty in proceeding the priority of majority and the complicated Cell Scheduling, because of the problem in operating the control speed of the ratio of N to scanning each port and scheduling the Cell. In this paper, To overcome these problems, We could show more the improved performance than the existing DBP Window policy to design high speed ATM Switch.

• The Transactions of the Korean Institute of Power Electronics
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• v.16 no.6
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• pp.561-568
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• 2011

This paper describes the operation characteristic of a single-phase PFC converter with 1-switch voltage doubler strategy for single-phase double-conversion UPS. A single-phase PFC converter with 1-switch voltage doubler strategy needs a diode bridge and one bidirectional active switch. Thus it is possible to reduce the material cost. However, the study results of operation characteristic and controller design has not been known after the converter circuit was proposed. For the performance evaluation of PFC converter, single-phase 3kVA double-conversion UPS was tested. The performance of PFC converter is experimentally confirmed with followings - input current reference traking, input power factor correction.

• Transactions on Electrical and Electronic Materials
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• v.17 no.4
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• pp.183-188
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• 2016

This paper presents the design and characterization of wide band ohmic microswitch with an actuation voltage as low as 20~25 V, and a restoring force of 14.1 μN. The design of the proposed switch is primarily composed of an electrostatic actuator, bridge membrane, cantilever (beam) and coplanar waveguide, suspended over the substrate. The analysis shows an insertion loss of −0.002 dB at 1GHz and remains as low as −0.35 dB, even at 100 GHz. The isolation loss of the switch is sustained at −21.09 dB at 100GHz, with a peak value of −99.58 dB at 1 GHz and up-state capacitance of 4 fF. To our knowledge, this is the first demonstration of a series contact switch, which works over a wide bandwidth (DC-100 GHz) and with such a high and sustained isolation, even at high frequencies and with an excellent figure of merit (f_c=1/2.pi.Ron.Cu= 39.7 THz).

• ETRI Journal
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• v.43 no.5
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• pp.799-811
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• 2021

This paper considers a challenging problem: to simultaneously optimize the cost and the quality of service in opaque wavelength division multiplexing (WDM) networks. An optimization problem is proposed that takes the information including network topology, traffic between end nodes, and the target level of congestion at each link/ node in WDM networks. The outputs of this problem include routing, link channel capacities, and the optimum number of switch ports locally added/dropped at all switch nodes. The total network cost is reduced to maintain a minimum congestion level on all links, which provides an efficient trade-off solution for the network design problem. The optimal information is utilized for dynamic traffic in WDM networks, which is shown to achieve the desired performance with the guaranteed quality of service in different networks. It was found that for an average link blocking probability equal to 0.015, the proposed model achieves a net channel gain in terms of wavelength channels (𝛾_w) equal to 35.72 %, 39.09 %, and 36.93 % compared to shortest path first routing and 𝛾_w equal to 29.41 %, 37.35 %, and 27.47 % compared to alternate routing in three different networks.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.18 no.4 s.119
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• pp.364-371
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• 2007

In this paper, the design and implementation of high-power PIN diode switch modules and high-speed switch driver circuits are presented for Wibro base stations. To prevent isolation degradation due to parasitic inductances of conventional packaged PIN diodes and to improve power handling capabilities of the switch modules, bare diode chips are used and carefully placed in a PCB layout, which makes bonding wire inductances to be absorbed in the impedance of a transmission line. The switch module is designed and implemented to have a maximum performance while using a minimum number of the diodes. It shows an insertion loss of ${\sim}0.84\;dB$ and isolation of 80 dB or more at 2.35 GHz. The switch driver circuit is also fabricated and measured to have a switching speed of ${\sim}200\;nsec$. The power handling capability test demonstrates that the module operates normally even under a digitally modulated 70 W RF signal stress.