• Title/Summary/Keyword: Sweep Surface

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Electrical Switching Characteristics of Ge-Se Thin Films for ReRAM Cell Applications

  • Kim, Jang-Han;Nam, Ki-Hyun;Chung, Hong-Bay
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.343-344
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    • 2012
  • It has been known since the mid 1960s that Ag can be photodissolved in chalcogenide glasses to form materials with interesting technological properties. In the 40 years since, this effect has been used in diverse applications such as the fabrication of relief images in optical elements, micro photolithographic schemes, and for direct imaging by photoinduced Ag surface deposition. ReRAM, also known as conductive bridging RAM (CBRAM), is a resistive switching memory based on non-volatile formation and dissolution of a conductive filament in a solid electrolyte. Especially, Ag-doped chalcogenide glasses and thin films have become attractive materials for fundamental research of their structure, properties, and preparation. Ag-doped chalcogenide glasses have been used in the formation of solid electrolyte which is the active medium in ReRAM devices. In this paper, we investigated the nature of thin films formed by the photo-dissolution of Ag into Ge-Se glasses for use in ReRAM devices. These devices rely on ion transport in the film so produced to create electrically programmable resistance states. [1-3] We have demonstrated functionalities of Ag doped chalcogenide glasses based on their capabilities as solid electrolytes. Formation of such amorphous systems by the introduction of Ag+ ions photo-induced diffusion in thin chalcogenide films is considered. The influence of Ag+ ions is regarded in terms of diffusion kinetics and Ag saturation is related to the composition of the hosting material. Saturated Ag+ ions have been used in the formation of conductive filaments at the solid electrolyte which is the active medium in ReRAM devices. Following fabrication, the cell displays a metal-insulator-metal structure. We measured the I-V characteristics of a cell, similar results were obtained with different via sizes, due to the filamentary nature of resistance switching in ReRAM cell. As the voltage is swept from 0 V to a positive top electrode voltage, the device switches from a high resistive to a low resistive, or set. The low conducting, or reset, state can be restored by means of a negative voltage sweep where the switch-off of the device usually occurs.

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Effect of Retaining Preconsruction Primer (PCP) on the Quality of High Performance Protective Coatings Systems

  • Chung, M.K.;Baek, K.K.;Lee, H.I.;Lee, C.H.;Shin, C.S.
    • Corrosion Science and Technology
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    • v.3 no.2
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    • pp.59-66
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    • 2004
  • In construction of new ships and large steel bridges in Korea, pre-construction primers (PCP), also known as shop primer, are routinely used and retained as an integral part of the protective coating system. Retention of PCP's can significantly reduce building schedule and cost. Retaining PCP through the so-called "sweep blasting" procedure eliminates or minimizes the necessity of a second blast operation, thus shortening overall schedule as well as reducing labor cost and hazardous waste disposal cost. This study evaluates the feasibility of retaining PCP as the part of primer for high performance protective coating systems applied to ships' hull, bottom and ballast tanks. Upon proving that the retention of the PCP is a viable option, the process of coating application can he improved significantly in terms of cost and working schedule of new ships and large steel bridges. Results indicate that use of the PCP via sweeping blasting in conjunction with standard high performance protective coating systems does not degrade the overall performance of the coating systems. At the same time, it is also highly recommended that the secondary surface preparation should consist of grit blasting of weld burnt and other damaged areas to SSPC SP-IO grade (Sa 2.5 Gr.), Near White Blast Cleaning with proper application and attention to detail.

Improving the Long-term Field Emission Stability of Carbon Nanotubes by Coating Co and Ni Oxide Layers

  • Choe, Ju-Seong;Lee, Han-Seong;Lee, Nae-Seong
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2011.10a
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    • pp.18.1-18.1
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    • 2011
  • Some applications of carbon nanotubes (CNTs) as field emitters, such as x-ray tubes and microwave amplifiers, require high current emission from a small emitter area. To emit the high current density, CNT emitters should be optimally fabricated in terms of material properties and morphological aspects including high crystallinity, aspect ratio, distribution density, height uniformity, adhesion on a substrate, low outgassing rate during electron emission in vacuum, etc. In particular, adhesion of emitters on the substrate is one of the most important parameters to be secured for high current field emission from CNTs. So, we attempted a novel approach to improve the adhesion of CNT emitters by incorporating metal oxide layers between CNT emitters. In our previous study, CNT emitters were fabricated on a metal mesh by filtrating the aqueous suspensions containing both highly crystalline thin multiwalled CNTs and thick entangled multiwalled CNTs. However, the adhesion of CNT film was not enough to produce a high emission current for an extended period of time even after adopting the metal mesh as a fixing substrate of the CNT film. While a high current was emitted, some part of the film was shown to delaminate. In order to strengthen the CNT networks, cobalt-nickel oxides were incorporated into the film. After coating the oxide layer, the CNT tips seemed to be more strongly adhered on the CNT bush. Without the oxide layer, the field emission voltage-current curve moved fast to a high voltage side as increasing the number of voltage sweeps. With the cobalt-nickel oxide incorporated, however, the curve does not move after the second voltage sweep. Such improvement of emission properties seemed to be attributed to stronger adhesion of the CNT film which was imparted by the cobalt-nickel oxide layer between CNT networks. Observed after field emission for an extended period of time, the CNT film with the oxide layer showed less damage on the surface caused by high current emission.

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Ferroelectric properties of BLT films deposited on $ZrO_2$Si substrates

  • Park, Jun-Seo;Lee, Gwang-Geun;Park, Kwang-Hun;Jeon, Ho-Seung;Im, Jong-Hyun;Park, Byung-Eun;Kim, Chul-Ju
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.11a
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    • pp.172-173
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    • 2006
  • Metal-ferroelectric-insulator-semiconductor (MFIS) structures with $Bi_{3.35}La_{0.75}Ti_3O_{12}$ (BLT) ferroelectric film and Zirconium oxide ($ZrO_2$) layer were fabricated on p-type Si(100). $ZrO_2$ and BLT films were prepared by sol-gel technique. Surface morphologies of $ZrO_2$ and BLT film were measured by atomic force microscope (AFM). The electrical characteristics of Au/$ZrO_2$/Si and Au/BLT/$ZrO_2$/Si film were investigated by C-V and I-V measurements. No hysteretic characteristics was observed in the C-V curve of the Au/$ZrO_2$/Si structure. The memory window width m C-V curve of the Au/BLT/$ZrO_2$/Si diode was about 1.3 V for a voltage sweep of ${\pm}5$ V. The leakage current of Au/$ZrO_2$/Si and Au/BLT/$ZrO_2$/Si structures were about $3{\times}10^{-8}$ A at 30 MV/cm and $3{\times}10^{-8}$ A at 3 MV/cm, respectively.

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A collect system of marine floating garbages by towing to the surface (표층 예인 부상식 해양 부유폐기물 수거 시스템)

  • Jang, Duck-Jong;Na, Sun-Cheol;Choi, Myung-Soo
    • Proceedings of KOSOMES biannual meeting
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    • 2007.11a
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    • pp.91-95
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    • 2007
  • It tries to develop a collect system for floating garbage flowed into the sea Based on the study on the characteristics of floating garbage in rainy season, it confirmed the structure and specification of each device and tested its performance on the sea It showed tint the collection device of this system could sweep more than 15 meters of sea area at a time when a ship moves with the efficiency of the spreading device. It means tint it is more efficient in collecting garbage than now in use garbage collecting ships. The water height of the net to which the garbage is finally input maintained more 50cm within the towing speed of 5kt. It indicates tint the garbage input performance is good The collect system of this research showed good performance collecting 200kg of garbage into the net for each test of collecting floating garbage.

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A Compact Tunable VCSEL and a Built-in Wavelength Meter for a Portable Optical Resonant Reflection Biosensor Reader

  • Ko, Hyun-Sung;Kim, Bong-Kyu;Kim, Kyung-Hyun;Huh, Chul;Kim, Wan-Joong;Hong, Jong-Cheol;Park, Seon-Hee;Yang, Seong-Seok;Jang, Ho-Jin;Sung, Gun-Yong
    • Journal of the Optical Society of Korea
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    • v.14 no.4
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    • pp.395-402
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    • 2010
  • This study reports a portable and precision photonic biosensor reader that can measure the concentration of a particular antigen using an optical resonant reflection biosensor (ORRB). To create a compact biosensor reader, a compact tunable vertical-cavity surface-emitting laser (VCSEL) and a compact built-in wavelength meter were manufactured. The wavelength stability and accuracy of the compact built-in wavelength meter were measured to be less than 0.02 nm and 0.06 nm, respectively. The tunable VCSEL emission wavelength was measured with the compact built-in wavelength meter, it has a fast sweep time (~ 10 seconds) and a wide tuning range (> 4 nm) that are sufficient for biosensor applications based on ORRB. The reflection spectrum of a plastic based ORRB chip was measured by the fabricated portable photonic biosensor reader using the VCSEL and wavelength meter. Although the reader is the size of a palmtop device, it could make a precise measurement of the peak wavelength on equal terms with a conventional bulky optical spectrometer.

Resistive Memory Switching in Ge5Se5 Thin Films

  • Kim, Jang-Han;Hwang, Yeong-Hyeon;Chung, Hong-Bay
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.326-326
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    • 2014
  • It has been known since the mid 1960s that Ag can be photodissolved in chalcogenide glasses to form materials with interesting technological properties. In the 40 years since, this effect has been used in diverse applications such as the fabrication of relief images in optical elements, micro photolithographic schemes, and for direct imaging by photoinduced Ag surface deposition. ReRAM, also known as conductive bridging RAM (CBRAM), is a resistive switching memory based on non-volatile formation and dissolution of a conductive filament in a solid electrolyte. Especially, Ag-doped chalcogenide glasses and thin films have become attractive materials for fundamental research of their structure, properties, and preparation. Ag-doped chalcogenide glasses have been used in the formation of solid electrolyte which is the active medium in ReRAM devices. In this paper, we investigated the nature of thin films formed by the photo-dissolution of Ag into Ge-Se glasses for use in ReRAM devices. These devices rely on ion transport in the film so produced to create electrically programmable resistance states [1-3]. We have demonstrated functionalities of Ag doped chalcogenide glasses based on their capabilities as solid electrolytes. Formation of such amorphous systems by the introduction of Ag+ ions photo-induced diffusion in thin chalcogenide films is considered. The influence of Ag+ ions is regarded in terms of diffusion kinetics and Ag saturation is related to the composition of the hosting material. Saturated Ag+ ions have been used in the formation of conductive filaments at the solid electrolyte which is the active medium in ReRAM devices. Following fabrication, the cell displays a metal-insulator-metal structure. We measured the I-V characteristics of a cell, similar results were obtained with different via sizes, due to the filamentary nature of resistance switching in ReRAM cell. As the voltage is swept from 0 V to a positive top electrode voltage, the device switches from a high resistive to a low resistive, or set. The low conducting, or reset, state can be restored by means of a negative voltage sweep where the switch-off of the device usually occurs.

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Study on the Systematic Technology of Promoting Purification for the Livestock Wastewater and Reuse

  • Okada, Yoshiichi;Shim, Jae-Do;Mitarai, Masahumi;Kojima, Takayuki;Gejima, Yoshinori
    • Proceedings of the Korean Society for Agricultural Machinery Conference
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    • 1996.06c
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    • pp.692-700
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    • 1996
  • The objective of this study is to develop a systematic purification plant using the metabolism of aerobic microorganisms. This system is subsequently aerated and continuously removes suspended solids and settling sludges caused by aerating pressure at the bottom of a lower pipe (i.e., Continuous Removal of Suspended solids and Settling sludges, CRSS). The CRSS plants are brought out by introducing fine air bubbles into the liquid phase of a lower pipe in the bio-reactor. These plant uses aeration pipe, with multiple inlets to sweep the floor of bio-reactor tank, instead of the conventional scraper mechanisms. The principal advantage of this system is that it can continuously remove very small or light particles that settles completely within a short time. Once the particles have been floated to the surface, they can be moved into the pipe and collected in the settling tank by sequently aerated pressure. The experimental results shows that about 99.0% of the biochemical oxygen demand(BOD), 99.3% of the suspended solid(SS), 92.3% of the total nitrogen(T-N), 99.0% of the turbidity(TU), 100% of the total coliform(TC)and ammonia was respectively removed during aerobic digestion for 9 days. These result indicates that the CRS S plants are very effective for reduction and deodorization of swine wastewater contaminants, and the efflux from CRS S can either be discharged in the river or used as nutrient solution of formulation for plant growth factories. The developed CRSS plant proved to be flexible and it can simply be adapted to any type of biological waste treatment problem.roblem.

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Investigation of crossflow features of a slender delta wing

  • Tasci, Mehmet O.;Karasu, Ilyas;Sahin, Besir;Akilli, Huseyin
    • Wind and Structures
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    • v.31 no.3
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    • pp.229-240
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    • 2020
  • In the present work, the main features of primary vortices and the vorticity concentrations downstream of vortex bursting in crossflow plane of a delta wing with a sweep angle of Λ=70° were investigated under the variation of the sideslip angles, β. For the pre-review of flow structures, dye visualization was conducted. In connection with a qualitative observation, a quantitative flow analysis was performed by employing Particle Image Velocimetry (PIV). The sideslip angles, β were varied with four different angles, such as 0°, 4°, 12°, and 20° while angles of attack, α were altered between 25° and 35°. This study mainly focused on the instantaneous flow features sequentially located at different crossflow planes such as x/C=0.6, 0.8 and 1.0. As a summary, time-averaged and instantaneous non-uniformity of turbulent flow structures are altered considerably resulting in non-homogeneous delta wing surface loading as a function of the sideslip angle. The vortex bursting location on the windward side of the delta wing advances towards the leading-edge point of the delta wing. The trajectory of the primary vortex on the leeward side slides towards sideways along the span of the delta wing. Besides, the uniformity of the lift coefficient, CL over the delta wing plane was severely affected due to unbalanced distribution of buffet loading over the same plane caused by the variation of the sideslip angle, β. Consequently, dissimilarities of the leading-edge vortices result in deterioration of the mean value of the lift coefficient, CL.

Enhancement of Power Conversion Efficiency from Controlled Nanostructure in Polymer Bulk-Hetero Junction Solar Cells

  • Wang, Dong-Hwan;Park, O-Ok;Park, Jong-Hyeok
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.08a
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    • pp.76-76
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    • 2011
  • Polymer-fullerene based bulk heterojunction (BHJ) solar cells can be fabricated in large area using low-cost roll-to-roll manufacturing methods. However, because of the low mobility of the BHJ materials, there is competition between the sweep-out of the photogenerated carriers by the built-in potential and recombination within the thin BHJ film [12-15]. Useful film thicknesses are limited by recombination. Thus, there is a need to increase the absorption by the BHJ film without increasing film thickness. Metal nanoparticles exhibit localized surface plasmon resonances (LSPR) which couple strongly to the incident light. In addition, relatively large metallic nanoparticles can reflect and scatter the light and thereby increase the optical path length within the BHJ film. Thus, the addition of metal nanoparticles into BHJ films offers the possibility of enhanced absorption and correspondingly enhanced photo-generation of mobile carriers. In this work, we have demonstrated several positive effects of shape controlled Au and Ag nanoparticles in organic P3HT/PC70BM, PCDTBT/PC70BM, Si-PCPDTBT/PC70BM BHJ-based PV devices. The use of an optimized concentration of Au and Ag nanomaterials in the BHJ film increases Jsc, FF, and the IPCE. These improvements result from a combination of enhanced light absorption caused by the light scattering of the nanomaterials in an active layer. Some of the metals induce the plasmon light concentration at specific wavelength. Moreover, improved charge transport results in low series resistance.

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