• 제목/요약/키워드: Suspended nanowires

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Selective fabrication and etching of vertically aligned Si nanowires for MEMS

  • Kar, Jyoti Prakash;Moon, Kyeong-Ju;Das, Sachindra Nath;Kim, Sung-Yeon;Xiong, Junjie;Choi, Ji-Hyuk;Lee, Tae-Il;Myoung, Jae-Min
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2010년도 춘계학술발표대회
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    • pp.27.2-27.2
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    • 2010
  • In recent years, there is a strong requirement of low cost, stable microelectro mechanical systems (MEMS) for resonators, microswitches and sensors. Most of these devices consist of freely suspended microcantilevers, which are usually made by the etching of some sacrificial materials. Herein, we have attempted to use Si nanowires, inherited from the parent Si wafer, as a sacrificial material due to its porosity, low cost and ease of fabrication. Prior to the fabrication of the Si nanowires silver nanoparticles were continuously formed on the surface of Si wafer. Vertically aligned Si nanowires were fabricated from the parent Si wafers by aqueous chemical route at $50^{\circ}C$. Afterwards, the morphological and structural characteristics of the Si nanowires were investigated. The morphology of nanowires was strongly modulated by the resistivity of the parent wafer. The 3-step etching of nanowires in diluted KOH solution was carried out at room temperature in order to control the fast etching. A layer of $Si_3N_4$ (300 nm) was used for the selective fabrication of nanowires. Finally, a freely suspended bridge of zinc oxide (ZnO) was fabricated after the removal of nanowires from the parent wafer. At present, we believe that this technique may provide a platform for the inexpensive fabrication of futuristic MEMS.

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Cytotoxic Potentials of Tellurium Nanowires in BALB/3T3 Fibroblast Cells

  • Mahto, Sanjeev Kumar;Vinod, T.P.;Kim, Jin-Kwon;Rhee, Seog-Woo
    • Bulletin of the Korean Chemical Society
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    • 제32권9호
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    • pp.3405-3410
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    • 2011
  • We have investigated the cytotoxic potential of tellurium (Te) nanowires in BALB/3T3 fibroblast cells. Te nanowires were synthesized through an aqueous phase surfactant assisted method. Toxicological experiments, such as analysis of morphological changes, MTT assay, DAPI staining, and estimation of intracellular reactive oxygen species, were carried out to reveal the cytotoxic effects of Te nanowires. Te nanowires were found to be cytotoxic at all concentrations tested, in a dose-dependent manner. The UV/Vis spectra of Te nanowires suspended in a culture medium showed drastic changes and disappearance of two broad absorption peaks. The physicochemical properties such as, surface charge, size, and shape of Te nanowires were found to be altered during exposure of cells, due to the instability and agglomeration of nanowires in the culture medium. These results suggest that the chemical components of the DMEM medium significantly affect the stability of Te nanowires. In addition, TEM images revealed that necrosis was the basic pattern of cell death, which might stem from the formation of toxic moieties of tellurium, released from nanowire structures, in the bioenvironment. These observations thus suggest that Te nanomaterials may pose potential risks to environmental and human health.

Fabrication of Metal Nanobridge Arrays using Sacrificial Silicon Nanowire

  • Lee, Kook-Nyung;Lee, Kyoung-Gun;Jung, Suk-Won;Lee, Min-Ho;Seong, Woo-Kyeong
    • Journal of Electrical Engineering and Technology
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    • 제7권3호
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    • pp.396-400
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    • 2012
  • Novel fabrication method of nanobridge array of various materials was proposed using suspended silicon nanowire array as a sacrificial template structure. Nanobridges of various materials can be simply fabricated by direct deposition with thermal evaporation on the top of prefabricated suspended silicon nanobridge arrays, which are used as a sacrificial structure. Since silicon nanowire can be easily removed by selective dry etching, nanobridge arrays of an intended material are finally obtained. In this paper, metal nanobridges of Ti/Au, around 50-200 nm in thickness and width, 5-20 ${\mu}m$ in length were fabricated to prove the advantages of the proposed nanowire or nanobridge fabrication method. The nanobridges of Ti/Au after complete removal of sacrificial silicon nanowire template were well-established and bending of nanobridge caused by the tensile stress was observed after silicon removing. Up to 50 nm and 10 ${\mu}m$ of silicon nanowire in diameter and length respectively was also very useful for nanowire templates.

Charged Cluster Model as a New Paradigm of Crystal Growth

  • Nong-M. Hwang;In-D. Jeon;Kim, Doh-Y.
    • 한국결정성장학회:학술대회논문집
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    • 한국결정성장학회 2000년도 Proceedings of 2000 International Nano Crystals/Ceramics Forum and International Symposium on Intermaterials
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    • pp.87-125
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    • 2000
  • A new paradigm of crystal growth was suggested in a charged cluster model, where charged clusters of nanometer size are suspended in the gas phase in most thin film processes and are a major flux for thin film growth. The existence of these hypothetical clusters was experimentally confirmed in the diamond and silicon CVD processes as well as in gold and tungsten evaporation. These results imply new insights as to the low pressure diamond synthesis without hydrogen, epitaxial growth, selective deposition and fabrication of quantum dots, nanometer-sized powders and nanowires or nanotubes. Based on this concept, we produced such quantum dot structures of carbon, silicon, gold and tungsten. Charged clusters land preferably on conducting substrates over on insulating substrates, resulting in selective deposition. if the behavior of selective deposition is properly controlled, charged clusters can make highly anisotropic growth, leading to nanowires or nanotubes.

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뜬 마이크로 디바이스를 이용한 Ge-SixGe1-x Core-Shell Nanowires 의 열전도율 측정 (Thermal Conductivity Measurement of Ge-SixGe1-x Core-Shell Nanowires Using Suspended Microdevices)

  • 박현준;나정효;;설재훈
    • 대한기계학회논문집B
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    • 제39권10호
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    • pp.825-829
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    • 2015
  • 나노선에서 코어-셸 헤테로 구조를 도입함으로써 열 전도율을 낮출 수 있으며, 이로 인해 열전 효율(ZT)을 향상시킬 수 있다는 것이 이론 연구를 통해 제안되었다. 본 논문에서는 코어-셸 나노선의 열전도율 감소를 실험적인 방법을 통해 확인하였다. 화학증기 증착법을 통해 만든 게르마늄-규소 $_x$ 게르마늄 $_{1-x}(Ge-Si_xGe_{1-x})$ 코어-셸 나노선의 열전도율을 마이크로 크기의 뜬 디바이스를 이용하여 측정하였다. 셸에서 측정된 실리콘의 함유율(x)는 0.65 로 확인하였으며, 게르마늄은 코어와 셸 사이에서, 격자 불일치(lattice mismatch)에서 비롯된 결점(defect)와 같은 역할을 한다. 또한, 4-point I-V 측정실험에, 휘트스톤 브릿지 실험을 추가 진행함으로써 측정 민감도를 강화하였다. 측정된 열전도율은 상온에서 9~13 W/mK 으로써, 비슷한 지름을 가지는 게르마늄 나노선과 비교하였을 때, 열전도율이 약 30 % 낮아졌음을 확인하였다.

다중벽 탄소나노튜브를 이용한 공진기 제작 (Fabrication of a Resonator using suspended Multi-wall Carbon Nanotubes)

  • 이종홍;서희원;송진원;한창수
    • 한국정밀공학회:학술대회논문집
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    • 한국정밀공학회 2006년도 춘계학술대회 논문집
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    • pp.465-466
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    • 2006
  • A single-wall carbon nanotube (SWCNT) has been studied as a material of Nano-Eletro-Mechanical-System (NEMS) device together with various nanowires. In order for oscillation of a multi-wall carbon nanotube (MWCNT) or a single-walled carbon nanotube (SWCNT) on plane surface, it needs suspension of a CNT across trench electrodes. So we propose fabrication method of a MWCNT resonator using dielectrophoresis and show successful results of suspeneded MWNT. Thin electrodes with large gaps could not suspend small diameter MWNT but thicker electrodes could. Thin MWNT could be suspended only when the electrode gap was reduced.

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단결정 PbTe 단일 나노선의 열전도도 (Thermal Conductivity in Individual Single-Crystalline PbTe Nanowires)

  • 노종욱;장소영;강주훈;이승현;노진서;박정희;이우영
    • 대한금속재료학회지
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    • 제48권2호
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    • pp.175-179
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    • 2010
  • We investigated the thermal conductivity of individual single-crystalline PbTe nanowires grown by chemical vapor transport method. Suspended MEMS was utilized to precisely measure the thermal conductivity of an individual nanowire. The thermal conductivity of a PbTe nanowire with diameter of 292 nm was measured to be $1.8W/m{\cdot}K$ at 300 K, which is about two thirds of that of bulk PbTe. This result indicates that the thermal conduction through a PbTe nanowire is effectively suppressed by the enhanced phonon boundary scattering. As the diameter of a PbTe nanowire decreases, the corresponding thermal conductivity linearly decreases.

ErAs 나노입자가 첨가된 InGaAlAs 박막의 평면정렬방향으로의 열전특성 (In-Plane Thermoelectric Properties of InGaAlAs Thin Film with Embedded ErAs Nanoparticles)

  • 이영중
    • 한국재료학회지
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    • 제21권8호
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    • pp.456-460
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    • 2011
  • Microelectromechanical systems (MEMS)-fabricated suspended devices were used to measure the in-plane electrical conductivity, Seebeck coefficient, and thermal conductivity of 304 nm and 516 nm thick InGaAlAs films with 0.3% ErAs nanoparticle inclusions by volume. The suspended device allows comprehensive thermoelectric property measurements from a single thin film or nanowire sample. Both thin film samples have identical material compositions and the sole difference is in the sample thickness. The measured Seebeck coefficient, electrical conductivity, and thermal conductivity were all larger in magnitude for the thicker sample. While the relative change in values was dependent on the temperature, the thermal conductivity demonstrated the largest decrease for the thinner sample in the measurement temperature range of 325 K to 425 K. This could be a result of the increased phonon scattering due to the surface defects and included ErAs nanoparticles. Similar to the results from other material systems, the combination of the measured data resulted in higher values of the thermoelectric figure of merit (ZT) for the thinner sample; this result supports the theory that the reduced dimensionality, such as in twodimensional thin films or one-dimensional nanowires, can enhance the thermoelectric figure of merit compared with bulk threedimensional materials. The results strengthen and provide a possible direction in locating and optimizing thermoelectric materials for energy applications.