• 센서학회지
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• 제31권4호
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• pp.271-277
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• 2022

We analyzed the effects of the interface trap on the output characteristics of an inversion mode n-channel GaN Schottky barrier (SB)-MOSFET based on the N_it distribution using TCAD simulation. As interface trap number density (N_it) increased, the threshold voltage increased while the drain current density decreased. Under N_it=5.0×10¹⁰ cm^-2 condition, the threshold voltage was 3.2 V for V_DS=1 V, and the drain current density reduced to 2.4 mA/mm relative to the non-trap condition. Regardless of the N_it distribution type, there was an increase in the subthreshold swing (SS) following an increase in N_it. Under U-shaped N_it distribution, it was confirmed that the SS varied depending on the gate voltage. The interface fixed charge (Q_f) caused an shift in the threshold voltage and increased the off-state current collectively with the surface trap. In summary, GaN SB-MOSFET can be a building block for high power UV optoelectronic circuit provided the surface state is significantly reduced.

• 한국소음진동공학회:학술대회논문집
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• 한국소음진동공학회 2002년도 춘계학술대회논문집
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• pp.672-676
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• 2002

In this paper, a reliability-based design optimization method, which enables the determination of optimum design that incorporate confidence range for structures, is studied. Response surface method and Monte Carlo simulation are utilized to determine limit state function. The proposed method is applied to the I-type steel structure for reliability based optimal design.

• International Journal of Precision Engineering and Manufacturing
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• 제2권1호
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• pp.18-25
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• 2001

Electrolytic polishing is the anodic dissolution process in the transpassive state. It removes non-metallic inclusion and improves mechanical and corrosion resistance of stainless steel. If there is a Bailby layer, it will be removed and the true structure of the surface will be restored. Electrolytic polishing is normally used to remove a very thin layer of material from the surface of metal object. A new electrolyte composed of phosphoric, sulfuric and distilled water has been developed in this study. Two current density, high & low current density regions, have been applied in this study. In this study, In the region of high current density, there is no plateau region but excellent electrolytic polishing effect can be accomplished in short machining time because material removel process and leveling process occur simultaneously. In the low current density region, there can be found plateau region. The material removal process and leveling process occur successively. The aim of this work is to determine electrolytic polishing for stainless steel in terms of high & low current density and workpiece surface roughness.

• E2M - 전기 전자와 첨단 소재
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• 제8권4호
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• pp.418-425
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• 1995

The surface of GaAs was treated by using the 0.1M solution of N $a_{2}$S.9 $H_{2}$O. The passivation of the surface in this sample was investigated by the photoreflectance(PR) experiment. The surface electric field( $E_{s}$) and built-in voltage( $V_{bi}$ ) discussed from Franz-Keldysh oscillation of PR signals. The density of surface states and Fermi level of GaAs treated with N $a_{2}$S.9 $H_{2}$O for 40min were determined 1.61*10$^{12}$ c $m^{-2}$ and 0.73eV. These values were about 15 and 10% smaller than those in untreated sample.e.

• 한국표면공학회지
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• 제52권3호
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• pp.138-144
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• 2019

In this work, PEO (Plasma Electrolytic Oxidation) film formation behavior of Al6061 alloy was investigated as a function of applied current density of AC at 310 Hz in the range from $120mA/cm^2$ to $300mA/cm^2$ in 0.5 M $Na_2SiO_3$ solution. When applied current density is lower than a critical voltage of about $132mA/cm^2$, voltage reaches a steady-state values less than 120 V without generation of arcs and metallic color of the alloy surface remains. On the other hand, when applied current density exceeds about $132mA/cm^2$, voltage increases continuously with time and arcs are generated at more than 175 V, resulting in the formation of PEO films with grey colors. Two different types of arcs, large size and small number of arcs with orange color, and small size and large number of arcs with white color, were generated at the same time when the PEO film thickness exceeds about $50{\mu}m$, irrespective of applied current density. Formation efficiency of the PEO films was found to increase with increasing applied current density and the growth rate was obtained to be about $5{\mu}m/min$ at $300mA/cm^2$. It was also found that surface roughness of the PEO films with $70{\mu}m$ thickness is not dependent on the applied current density.

• Environmental Engineering Research
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• 제16권1호
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• pp.29-34
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• 2011

The electric charge on a membrane was investigated by analyzing the experimental rejection of various monovalent and divalent ionic solutes. The characteristics of the separation of ionic solutes using various nanofiltration membranes were obtained from an experimental nanofiltration set-up, with a surface area of $40cm^2$ under the operational pressures between 0.25-0.3 MPa. The state of the membrane electric charge was observed using separation coefficients, i.e., the permeation ratio of monovalent to divalent ions. To confirm the state of the membrane charge observed via the separation coefficient, a calculation using the extended Nernst-Planck equation, coupled with the Donnan equilibrium, assuming different electric charge states of the membrane, was compared with the experimental rejection of ionic solutes. The examination of the characteristics of separation using three types of nanofiltration membranes showed that one of the membranes carried a negative/positive double charge density inside, while other two membranes carried either a positive or negative charge density.

• 한국자기학회지
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• 제17권3호
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• pp.109-113
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• 2007

CsCl 구조를 가진 VRu(001) 표면의 자기적 성질을 일반기울기근사(GGA)를 채택한 총퍼텐셜선형보강평면파(FLAPW) 에너지 띠 계산 방법을 이용하여 이론적으로 연구하였다. 이를 위해 각기 V 및 Ru 원자층으로 끝나는 두 개의 (001) 표면을 고려하였다. 계산된 머핀-틴 구 내의 다수 및 소수 전자의 수로부터 V로 끝나는 표면의 자기모멘트는 $1.71_{{\mu}_B}$로 매우 큰 값을 가졌으며, Ru로 끝나는 표면은 자성이 거의 없는 것으로 계산되었다. 이러한 자성을 계산된 스핀분극상태밀도와 스핀전하밀도와 연관지어 설명하였다.

• 한국정보기술응용학회:학술대회논문집
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• 한국정보기술응용학회 2005년도 6th 2005 International Conference on Computers, Communications and System
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• pp.119-122
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• 2005

A algorithm for control and performance of a pulse-density-modulated (PDM) series-resonant voltage source inverter developed for corona-dischange precesses is presented. The PDM inverter produces either a square-wave ac-voltage state or a zero-voltage state at its ac terminals to control the average output voltage under constant dc voltage and operating frequency. Moreover it can achieve zero-current-switching (ZCS) and zero-voltage-switching (ZVS) in all the operating condition for a reduction of switching lost. Even though the corona discharge load with a strong nonlinear characteristics, new high frequency resonant inverter is shown the wide range power control from 5% to 100%.

• Tribology and Lubricants
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• 제31권3호
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• pp.79-85
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• 2015

RC delay is a critical issue for achieving high performance of ULSI devices. In order to minimize the RC delay time, we uses the CMP process to introduce high-conductivity Cu and low-k materials on the damascene. The low-k materials are generally soft and fragile, resulting in structure collapse during the conventional high-pressure CMP process. One troubleshooting method is electrochemical mechanical polishing (ECMP) which has the advantages of high removal rate, and low polishing pressure, resulting in a well-polished surface because of high removal rate, low polishing pressure, and well-polished surface, due to the electrochemical acceleration of the copper dissolution. This study analyzes an electrochemical state (active, passive, transpassive state) on a potentiodynamic curve using a three-electrode cell consisting of a working electrode (WE), counter electrode (CE), and reference electrode (RE) in a potentiostat to verify an electrochemical removal mechanism. This study also tries to find optimum conditions for ECMP through experimentation. Furthermore, during the low-pressure ECMP process, we investigate the effect of current density on surface roughness and removal rate through anodic oxidation, dissolution, and reaction with a chelating agent. In addition, according to the Faraday’s law, as the current density increases, the amount of oxidized and dissolved copper increases. Finally, we confirm that the surface roughness improves with polishing time, and the current decreases in this process.

• Geomechanics and Engineering
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• 제12권6호
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• pp.983-1001
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• 2017

The extent by which economy and safety concerns can be addressed in earth retaining structure design depends on the accuracy of the assumed failure surface. Accordingly, this study attempts to investigate and quantify mechanical backfill properties that control failure surface geometry of cohesionless backfills at the active state for translational mode of wall movements. For this purpose, a small scale 1 g physical model study was conducted. The experimental setup simulated the conditions of a backfill behind a laterally translating vertical retaining wall in plane strain conditions. To monitor the influence of dilative behavior on failure surface geometry, model tests were conducted on backfills with different densities corresponding to different dilation angles. Failure surface geometries were identified using particle image velocimetry (PIV) method. Friction and dilation angles of the backfill are calculated as functions of failure stress state and relative density of the backfill using a well-known empirical equation, making it possible to quantify the influence of dilation angle on failure surface geometry. As a result, an empirical equation is proposed to predict active failure surface geometry for cohesionless backfills based on peak dilatancy angle. It is shown that the failure surface geometries calculated using the proposed equation are in good agreement with the identified failure surfaces.