• Korean Journal of Materials Research
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• v.8 no.8
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• pp.751-756
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• 1998

Effects of remote hydrogen plasma cleaning process parameters on the removal of Fe impurities on Si surfaces and the Fe removal mechanism were investigated. Fe removal efficiency is enhanced with decreasing the plasma exposure time and increasing the rf-power. The optimum plasma exposure time and rf-power are 1 min and 100W. respectively, in the range below 10 min and 100W. Fe removal efficiency is better under lower pressures than higher pressures, and the optimum $\textrm{H}_2$ flow rate was found to be 20 and 60sccm, respectively, under a low and a high pressure. The post-RHP(remote hydrogen plasma) annealing enhanced metallic contaminants removal efficiency, and the highest efficiency was achieved at $600^{\circ}C$. According to the AFM analysis results Si surface roughness was improved by 30-50%, which seems to be due to the removal of particles by the plasma cleaning. Also. Fe impurities removal mechanisms by remote hydrogen plasma are discussed.

• Journal of Biomedical Engineering Research
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• v.20 no.1
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• pp.99-106
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• 1999

Ultra-high molecular weight polyethylene (UHMWPE) was crosslinked in the melt state to enhance wear resistance, Dicumyl peroxide (DCP) and triallyl cyanurate (TAC) was used as a crosslinking agent and a promoter, respectively. With increasing amount of DCP and TAC used, gel content of crosslinked UHMWPE (XUMPE) increased, while the melting temperature, crystallizaiton temperature, crystallinity, and tensile properties decreased. The results of pin-on-disk wear test and ball-on-disk test with small applied load showed reduced wear volumes of XUMPE from that of the unmodified UHMWPE. As the wear mechanism effected in the experimental condition of this study was thought to be deformation rather than adhesion or fatigue, a new parameter, the ratio of maximum contact stress to yield stress, was proposed to correlate well with observed wear resistance. In ball-on-disk wear test with larger applied load, XUMPE showed higher wear volumes than that of the unmodified UHMWPE which were accompanied with increased friction coefficients and surface roughness of the wear tracks. When contact stress was well above yield stress, the failure of XUMPE, as well as deformation, was thought to be much accelerated.

• The Journal of Engineering Geology
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• v.12 no.2
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• pp.215-234
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• 2002

Groundwater Dam is one of the reliable techniques to get huge amount of groundwater abstraction for municipal, agricultural, drinking, industrial water supply system. It can be a major technique to solve water shortage problems when it based on the sufficient watershed, proper topology, and adequate aquifer distribution and pollution control, Groundwater Dam had initiated its construction by RDC(former KARICO) in early eighties in Korea and 4 of it in total were added more until late eighty. However, this technique has shrunken its application due to gradually decreased yield rate after sever years of construction. After we studied several existing sites precisely, we concluded that the main reason of decreasing yield rate was come form engineering roughness on construction in early nineties. Theoretically, the technique itself seemed to be little detectives however, there were a little application in the fields in Korea. With the recent advance in engineering fields, those defects in construction would be no longer obstacle to construct underground wall and the technique could be a one of major ground water production technique in the future. It is essential to study following items thoroughly before select the appropriate site. The topography and the site of the underground wall, aquifer distribution, the specific technique for wall construction to block groundwater flow effectively and strict quality control during construction are critical. The surface and ground water monitoring data should be collected. Sustainability of the Groundwater Dam with huge groundwater abstraction in long term should be based on the long-term water balance analysis for each site. The water quality, environmental effect analysis and maintenance achedule should be also analyzed and planned in prior. It is suggested that the two consecutive underground wall in the coastal area to prevent seawater intrusion beneath a single wall.

• Journal of the Korean Society of Environmental Restoration Technology
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• v.11 no.1
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• pp.23-32
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• 2008

In order to discern the development of technology in creating, properly managing, and characterizing the types used in facade greening, this article examines the instances of facade greening of Bulgaria, Greece and Turkey which is not only located in the latitude similar to South Korea's but also influenced by the both continental and oceanic climate. The study was carried out for 11 months from October 2002 to September 2003. The total 242 places were researched and they were 83 sites in Athens, 77 sites in Istanbul, and 82 sites in Sofia. Varieties, usage, configuration, foundation and characteristics of plants were studied. The goals of greening, and building's surface roughness and thickness, direction of the wall were also researched. The result of survey are as follows; 17 families and 33 species of climbing plants were found in Athens, Istanbul, and Sofia. Thickness of facade greening in the three cities is 46cm in Athens, 39cm in Istanbul, and 53cm in Sofia. The possible facade greening size per a climbing plant, Parthenocissus tricupidata takes up the largest portion of the wall in the three cities similarly followed by Vitis vinifera and Wistaria spp. By its diversity it can be assumed that these plants are most practical for large scale of facade greening and full covering. Evergreen climbing plants such as Hedera helix and Ficus niponica are useful plants for relatively large scale of facade greening area. In the facade greening types, the climbing type is the most dominant in the three cities and most of the climbing type was planted on the natural foundation but the hanging and combination types were planted on an artificial foundation located on the balcony or on the roof of the building. In the directions of the walls for facade greening, the west direction are most popular which is for the improvement of sun shading in summer season. In Sofia the apartments were most applied with facade greening but In Istanbul and Athens the residential buildings and the public buildings were adapted with facade greening actively as well as residential building. The purpose of lowering summer heat took up the highest portion followed by the purpose of ornamentation and maintaining privacy in all surveyed cities.

• Proceedings of the Korea Contents Association Conference
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• 2008.05a
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• pp.792-795
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• 2008

AGT system is a kind of light railway train. AGT system use of concrete track and rubber tire, so it can be reduce the noise and vibration, compare to the normal train system. And, the dynamic responses of normal bridge are influenced by the dynamic characteristics of bridge, the speed of vehicle and the surface roughness of railway. But the AGT system bridge is influenced not only the above facts but also the guiderail unevenness, because, AGT vehicle steered by guiderail. So, in this study, optimized service condition is suggested for the design and operation of AGT system, by the means of experimental study. The experiments are executed for PSC bridge with length of 30m, at the AGT test line in Kyongsan. The test results are compared and investigated according to the prominence. In the test result, the guiderail prominence influenced on the dynamic response of bridge. It shows a increase as compared with no guiderail prominence in the dynamic response value acceleration, displacement, stain.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.10
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• pp.2497-2502
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• 2014

The 5 wt.% Ga-doped zinc oxide (GZO) thin films were fabricated on PES substrates with various RF power 50~80 W by using RF magnetron sputtering in order to investigate the optical and electrical properties of GZO thin films. The XRD measurement showed that GZO thin films exhibit c-axis orientation. At a RF power of 70W, the GZO thin film showed the highest (002) diffraction peak with a Full-Width-Half-Maximum (FWHM) of $0.44^{\circ}$. AFM analysis showed that the lowest surface roughness (0.20 nm) was obtained for the GZO thin film fabricated at 70 W of RF power. The electrical property indicated that the minimum resistivity ($6.93{\times}10^{-4}{\Omega}{\cdot}cm$) and maximum carrier concentration ($7.04{\times}10^{20}cm^{-3}$) and hall mobility ($12.70cm^2/Vs$) were obtained in the GZO thin film fabricated at 70W of RF power. The optical transmittance in the visible region was higher than 80 %, regardless of RF power. The optical band-gap showed the slight blue-shift with increased in carrier concentration which can be explained by the Burstein-Moss effect.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.12 no.7
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• pp.2919-2924
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• 2011

The automatic drawer is used to absorb the movement shock and adjust its velocity when it opens and closes. The tube in shock-absorber is the cylindrical case which surrounds its parts and is made of acetal. The purpose of this study is to determine the quality stability of the tube in the shock-absorber in injection molding process. The tube which had been manufactured in the process with 4 cavity cooling unit was used. In this study, the analysis and test are carried out to determine its quality stability. Which are the quality analysis with numerical simulation and performance tests of the tube compared with one of foreign make. It is calculated that the injection press is 87.6 MPa and the deflections in X, Y, Z directions are ranged in 0.07~1.00 mm. When the researched tube is compared with the foreign made tube, the maximum bending compressive load is 231 kgf higher, average axial compressive load is 0.05 kgf higher, and the roughness(Ra) on the inner surface is $0.02\;{\mu}m$. lower. In the result, it is known that the quality of researched tube in injection mold process is stable and its performance is superior.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.7 no.6
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• pp.1056-1063
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• 2006

Thermal evaporated 10 nm-Ni/l nm-Ir/(or polycrystalline)p-Si(100) and 10 nm-$Ni_{50}Co_{50}$/(or polycrystalline)p-Si(100) films were thermally annealed using rapid thermal annealing fur 40 sec at $300{\sim}1200^{\circ}C$. The annealed bilayer structure developed into Ni(Ir or Co)Si and resulting changes in sheet resistance, microstructure, phase and composition were investigated using a four-point probe, a scanning electron microscopy, a field ion beam, an X-ray diffractometer and an Auger electron spectroscope. The final thickness of Ir- and Co-inserted nickel silicides on single crystal silicon was approximately 20$\sim$40 nm and maintained its sheet resistance below 20 $\Omega$/sq. after the silicidation annealing at $1000^{\circ}C$. The ones on polysilicon had thickness of 20$\sim$55 nm and remained low resistance up to $850^{\circ}C$. A possible reason fur the improved thermal stability of the silicides formed on single crystal silicon substrate is the role of Ir and Co in preventing $NiSi_2$ transformation. Ir and Co also improved thermal stability of silicides formed on polysilicon substrate, but this enhancement was lessened due to the formation of high resistant phases and also a result of silicon mixing during high temperature diffusion. Ir-inserted nickel silicides showed surface roughness below 3 nm, which is appropriate for nano process. In conclusion, the proposed Ir- and Co- inserted nickel silicides may be superior over the conventional nickel monosilicides due to improved thermal stability.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.8 no.1
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• pp.25-32
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• 2007

We investigated the silicide reaction stability between 10 nm-Col-xNix alloy films and silicon substrates with the existence of 4 nm-thick natural oxide layers. We thermally evaporated 10 nm-Col-xNix alloy films by varying $x=0.1{\sim}0.9$ on naturally oxidized single crystal and 70 nm-thick polycrystalline silicon substrates. The films structures were annealed by rapid thermal annealing (RTA) from $600^{\circ}C$ to $1100^{\circ}C$ for 40 seconds with the purpose of silicidation. After the removal of residual metallic residue with sulfuric acid, the sheet resistance, microstructure, composition, and surface roughness were investigated using a four-point probe, a field emission scanning electron microscope, a field ion bean4 an X-ray diffractometer, and an Auger electron depth profiling spectroscope, respectively, to confirm the silicide reaction. The residual stress of silicon substrate was also analyzed using a micro-Raman spectrometer We report that the silicide reaction does not occur if natural oxides are present. Metallic oxide residues may be present on a polysilicon substrate at high silicidation temperatures. Huge residual stress is possible on a single crystal silicon substrate at high temperature, and these may result in micro-pinholes. Our results imply that the natural oxide layer removal process is of importance to ensure the successful completion of the silicide process with CoNi alloy films.

• Journal of the Korean Vacuum Society
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• v.9 no.3
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• pp.197-206
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• 2000

The deposition characteristics of MOCVD Cu using the (hfac)Cu(1,1-COD)(1,1,1,5,5,5-hexafluoro-2,4-pentadionato Cu(I) 1,5-cyclooctadine) have been investigated in terms of the effects of carrier gas such as hydrogen and argon as well as the effects of H(hfac) ligand addition. MOCVD Cu using a hydrogen carrier gas led to a higher deposition rate and lower resistivity than an argon carrier gas system. The improvement in the surface roughness of the MOCVD Cu films and the (111) preferred orientation texture was obtained by using a hydrogen carrier gas. However, the adhesion characteristics of the films showed relatively weaker compared to the Ar carrier gas system, probably due to the larger amount of F content in the films, which was confirmed by the AES analyses. When an additional H(hfac) ligand was added, the deposition rate was significantly enhanced in the case of an argon + H(hfac) carrier gas system while significant change in the deposition rate of MOCVD Cu was not observed in the case of the hydrogen carrier gas system. However, the addition of H(hfac) in both carrier gases led to lowering the resistivity of the MOCVD Cu films. In conclusion, this paper suggests the deposition mechanism of MOCVD Cu and is expected to contribute to the enhancement of smooth Cu films with a low resistivity by manipulating the deposition conditions such as the carrier gas and addition of H(hfac) ligand.