• 제목/요약/키워드: Surface reaction-layer

검색결과 572건 처리시간 0.027초

용융 아연과 WC-Co 코팅층 내 코발트의 반응거동에 미치는 아연욕 중의 Al 첨가 영향 (Effect of Al Addition on the Reaction Behavior of Pure Cobalt with Molten Zinc)

  • 성병근;김규영;권성희;이기안
    • 한국표면공학회지
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    • 제40권1호
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    • pp.23-31
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    • 2007
  • The objective of this study is to investigate the effect of Al addition on the reaction behavior of cobalt with molten zinc. Pure cobalt specimen was immersion tested in the three kinds of molten zinc (pure, 0.12%Al added and 0.24%Al added) baths at $460^{\circ}C,\;490^{\circ}C\;and\;520^{\circ}C$. For the understanding of degradation processes, specimens were analyzed with scanning electron microscope (SEM) and energy dispersive spectrum (EDS), and electrochemical stripping method. When 0.12% and 0.24% Al was added in molten zinc baths, three intermetallic compounds layers of ${\gamma},\;{\gamma}_1,\;and\;{\gamma}_2$ were formed on the Co matrix and ${\beta}_1$ layer was not formed between the Co matrix and the ${\gamma}$ layer. Particles of CoAl intermetallic compound were formed at the interface between the ${\gamma}_2$ layer and zinc melt and they did not adhere to the Co-Zn intermetallic layer. Weight loss of the Co specimen increased as Al content in the molten zinc increased and the relationship of weight loss vs. immersion time followed parabolic rate law. Rate controlling process for the reaction rate of Co with Al added molten zinc was analyzed as the diffusion process of Al atom through a boundary layer between the ${\gamma}_2$ layer and the Al added zinc melt.

Structural Evolution and Electrical Properties of Highly Active Plasma Process on 4H-SiC

  • Kim, Dae-Kyoung;Cho, Mann-Ho
    • Applied Science and Convergence Technology
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    • 제26권5호
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    • pp.133-138
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    • 2017
  • We investigated the interface defect engineering and reaction mechanism of reduced transition layer and nitride layer in the active plasma process on 4H-SiC by the plasma reaction with the rapid processing time at the room temperature. Through the combination of experiment and theoretical studies, we clearly observed that advanced active plasma process on 4H-SiC of oxidation and nitridation have improved electrical properties by the stable bond structure and decrease of the interfacial defects. In the plasma oxidation system, we showed that plasma oxide on SiC has enhanced electrical characteristics than the thermally oxidation and suppressed generation of the interface trap density. The decrease of the defect states in transition layer and stress induced leakage current (SILC) clearly showed that plasma process enhances quality of $SiO_2$ by the reduction of transition layer due to the controlled interstitial C atoms. And in another processes, the Plasma Nitridation (PN) system, we investigated the modification in bond structure in the nitride SiC surface by the rapid PN process. We observed that converted N reacted through spontaneous incorporation the SiC sub-surface, resulting in N atoms converted to C-site by the low bond energy. In particular, electrical properties exhibited that the generated trap states was suppressed with the nitrided layer. The results of active plasma oxidation and nitridation system suggest plasma processes on SiC of rapid and low temperature process, compare with the traditional gas annealing process with high temperature and long process time.

고온 부식환경에 대한 Fe-Cr-X 합금의 열역학적 반응경로에 관한 연구 (A Study of Thermodynamical Reaction Path in Fe-Cr-X Alloys at High Temperature Corrosion Environments)

  • 이병우;김우열
    • 수산해양기술연구
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    • 제32권4호
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    • pp.411-420
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    • 1996
  • The structure of the scale formed on the surface of Fe - Cr - X alloys exposed to 1143K high sulfidation($Ps_2$ = 1.11$\times$$10^-7$ atm, $Po_2$ = 3.11$\times$$10^-20$ atm) or sulfidation/oxidation(($Ps_2$= 1.06$\times$$10^-7$ atm, ($Po_2$ = 3.11$\times$$10^-18$ atm) environment has been observed and analysed using XRD, SEM/EDS. To investigate the possibility of protective film formed on the surface of the alloys, Aluminium, Nickel were selected as alloying elements. Thermodynamic phase stability diagram was used to predict the reaction path of scale formed on Fe - Cr - X alloys. Parabolic rate constant($K_p$) value with 6wt% Al in Fe - 25Cr alloy decreased significantly compared with the Fe - 25Cr alloy without 6wt% Al. Since thin layer of defect free sulfide film, (Al, Cr)Sx, was formed at the alloy/scale interface. Fe - rich sulfide scale at outer layer and Cr - rich sulfide scale containing porosity at inner layer of Fe - 25Cr alloy have been observed. The reaction path for these scales could be predicted by the thermodynamic stability diagram.

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Growth and Migration of BALB/3T3 Fibroblast Cells on Nano-engineered Silica Beads Surface

  • Kim, Jihee;Chandra, Prakash;Yang, Jiyoon;Rhee, Seog Woo
    • Bulletin of the Korean Chemical Society
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    • 제34권12호
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    • pp.3715-3721
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    • 2013
  • In this study, the behavior of cells on the modified surface, and the correlation between the modified substrates and the response of cells is described. A close-packed layer of nano-sized silica beads was prepared on a coverslip, and the adhesion, proliferation, and migration of BALB/3T3 fibroblast cells on the silica layer was monitered. The 550 nm silica beads were synthesized by the hydrolysis and condensation reaction of tetraethylorthosilicate in basic solution. The amine groups were introduced onto the surfaces of silica particles by treatment with 3-aminopropyltrimethoxysilane. The close-packed layer of silica beads on the coverslip was obtained by the reaction of the amine-functionalized silica beads and the (3-triethoxysilyl)propylsuccinic anhydride treated coverslip. BALB/3T3 fibroblast cells were loaded on bare glass, APTMS coated glass, and silica bead coated glass with the same initial cell density, and the migration and proliferation of cells on the substrates was investigated. The cells were fixed and stained with antibodies in order to analyze the changes in the actin filaments and nuclei after culture on the different surfaces. The motility of cells on the silica bead coated glass was greater than that of the cells cultured on the control substrate. The growth rate of cells on the silica bead coated glass was slower than that of the control. Because the close-packed layer of silica beads gave an embossed surface, the adhesion of cells was very weak compared to the smooth surfaces. These results indicate that the adhesion of cells on the substrates is very important, and the actin filaments might play key roles in the migration and proliferation of cells. The nuclei of the cells were shrunk on the weakly adhered surfaces, and the S1 stage in which DNA is duplicated in the cell dividing processes might be retarded. As a result, the rate of proliferation of cells was decreased compared to the smooth surface of the control. In conclusion, the results described here are very important in the understanding of the interaction between implanted materials and biosystems.

접합계면반응에 미치는 직류전원부하의 영향 (Effect of applying a DC voltage on the interfacial reactions at the zirconia to copper interface)

  • 김성진;김인수;오명훈;최환
    • 대한용접접합학회:학술대회논문집
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    • 대한용접접합학회 1996년도 특별강연 및 춘계학술발표 개요집
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    • pp.6-9
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    • 1996
  • The Joining of copper rod and zirconia tube was carried out in Ar gas atmosphere. There are two type of the joining. The one is the reaction bond consisting of Cu and zirconia was dominated by surface reaction wi th a undetctable very thin layer. It was found that copper elements were diffused to zirconia side, but that most of Z $r^{4+}$ ions were not diffused to copper side. This result means application of a DC voltage to migrate oxygen to the copper/zirconia interface can oxidize metal at the copper /zirconia interface, and the bonding reaction between zirconia and copper oxide may occur. The other is the reaction bonding was dominated by interdiffusion with a very thick interface layer. This result means application of a DC voltage can reduce zirconia at the interface. The bonding reaction is to be an alloying between Zr and Cr.

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Crack-Free Fabrications of Yttria-Stabilized Zirconia Films Using Successive-Ionic-Layer-Adsorption-and-Reaction and Air-Spray Plus Method

  • Taeyoon Kim;Sangmoon Park
    • 한국재료학회지
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    • 제34권2호
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    • pp.79-84
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    • 2024
  • Thin films of yttria-stabilized zirconia (YSZ) nanoparticles were prepared using a low-temperature deposition and crystallization process involving successive ionic layer adsorption and reaction (SILAR) or SILAR-Air spray Plus (SILAR-A+) methods, coupled with hydrothermal (175 ℃) and furnace (500 ℃) post-annealing. The annealed YSZ films resulted in crystalline products, and their phases of monoclinic, tetragonal, and cubic were categorized through X-ray diffraction analysis. The morphologies of the as-prepared films, fabricated by SILAR and SILAR-A+ processes, including hydrothermal dehydration and annealing, were characterized by the degree of surface cracking using scanning electron microscopy images. Additionally, the thicknesses of the YSZ thin films were compared by removing diffusion layers such as spectator anions and water accumulated during the air spray plus process. Crack-free YSZ thin films were successfully fabricated on glass substrates using the SILAR-A+ method, followed by hydrothermal and furnace annealing, making them suitable for application in solid oxide fuel cells.

화학적 기상 반응에 의한 탄화규소 피복 흑연의 시뮬레이션(Ⅰ) (Simulation of Silicon Carbide Converted Graphite by Chemical Vapor Reaction (Ⅰ))

  • 이준성;최성철
    • 한국세라믹학회지
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    • 제38권9호
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    • pp.846-852
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    • 2001
  • 2차원적 몬테 칼로 시뮬레이션을 사용하여, 화학적 기상 반응법에 의한 탄화규소 전환층의 생성에 미치는 온도의 영향을 조사하였다. 화학적 기상 반응법은 실리카의 열탄화 환원법에 근거하며, 흑연 기판의 탄소와 실리카 반응기체와의 화학적 반응에 의하여 탄화규소 전환층을 형성하는 방법이다. 탄화규소는 반응기체의 확산 및 반응과 같은 열적활성화 과정을 통하여 생성되기 때문에 탄화규소 전환층의 형성은 온도에 크게 의존함을 알 수 있다. 본 연구에서는 몬테 칼로법을 사용하여 삼각격자로 배열된 2차원적인 계에서 흑연 기판의 미세 기공을 따라 확산된 반응기체와 탄소와의 반응에 의해서 탄화규소가 형성되는 과정을 시뮬레이션을 행하였다. 반응 온도를 1900K, 2000K, 2100K, 2200K로 조건을 달리하여 시뮬레이션 하였으며, 그 계산 결과를 실험 결과와 비교하여 재현성을 검토하고 탄화규소 전환층의 두께와 화학적 조성 구배에 대한 반응 온도의 영향을 검증하기 위한 것이다.

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이종 접합 구조를 갖는 TiO2/WO3 이중 박막의 광유기 친수 특성 (Photoinduced Hydrophilicity of Heterogeneous TiO2/WO3 Double Layer Films)

  • 오지용;이병로;김화민;이창현
    • 한국전기전자재료학회논문지
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    • 제28권11호
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    • pp.715-720
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    • 2015
  • The photoinduced hydrophilicity of $TiO_2/WO_3$ double layer films was fabricated by using a conventional rf-magnetron sputtering method. The photoinduced hydrophilic reaction of the $TiO_2$ surface was enhanced by the presence of $WO_3$ under the $TiO_2$ layer by irradiation of a 10 W cylindrical fluorescent light bulb. However, when the $TiO_2$ and $WO_3$ layers were separated by an insulating layer, the surface did not appeared high hydrophilic, under the same light bulb. The enhanced photoinduced hydrophilic reaction can be explained by the charge transfer between $TiO_2$ and $WO_3$ layers. It was also demonstrated that visible light passing through the $TiO_2$ layer could excite $WO_3$. Thus, visible light can be used for the hydrophilic reaction in the present $TiO_2/WO_3$ system.

염산과 수산화칼슘 수용액과의 반응에 의한 사장석의 용해 거동 (Dissolution Behavior of Plagioclase in HCl and KOH Solutions)

  • 현성필;김수진
    • 한국광물학회지
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    • 제9권2호
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    • pp.71-81
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    • 1996
  • Dissolution experiments were conducted to understand chemical nature of weathering of anorthosite from the Hadong area. Anorthosite and plagioclase from it were reacted with HCl or KOH solutions under various conditions concerning such as grain size, initial pH of solutions, and shaking Average composition of plagioclase used in the experiment was Na0.32Ca0.71Al1.71Si2.28O8.Under acidic conditions, solution pH increases rapidly in the initial stage and then gradually to reach palteau. Shaking agitates the reaction rate in the initial stage but does not affect after the system reached steady state. Ca and si concentrations show rapid increase and then gradual increase. Al concentration increases rapidly in the early stage and then decreases. Later decrease was interpreted as the precipitation of an Al-bearing material. Different dissolution rates of different constituents of plagioclase together the with precipitation of al-bearing material might be responsible for the non-stoichiometric dissolution of plagioclase.X-ray diffraction analyses on anorthosite before and after dissolution experiment show dissolution rates differ with different lattice planes of plagioclase. It suggests the crystallographic control on dissolution reaction. X-ray photoelectron spectroscopic result shows that the average composition of plagioclase surface reacted with HCL of initial pH 1.97 for 2000 hours is Na0.20Ca0.26Al1.7Si2.3O8. It means that Na- and Ca-depleted H-feldspar is developed without Al-depleted layer on the surface of plagioclase by reaction with HCl and that dissolution reaction takes place sparsely on the surface of plagioclase. Al and Si are dissolved preferentially over Ca from anorthosite powder in KHO solution. Reaction of acid-reacted anorthosite with KOH solution shows the same Si dissolution behavior as in the fresh anorthosite. This indicates that the Al-depleted and Si-enriched layer does not build up on the acid-reacted surface.

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정전 대전된 액적에 의한 용융 아연 도금층의 응고 방법 (Solidification of Hot-Dip Galvanized Layer by Electrostatically Charged Aerosol Particles)

  • 김상헌;김형민;정원철;정원섭
    • 한국표면공학회지
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    • 제33권4호
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    • pp.233-240
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    • 2000
  • A novel electrostatic spraying method to solidify molten zinc coating layer was studied by SEM and measurement of sample's temperature. The sprayed droplets also served as nucleation sites in the solidification reaction of molten zinc but might leave the pitting mark by impinging on its surface especially at high spray pressure. Our experimental results showed that electric field could change the sprayed particle trajectories and assist the fine droplets to attach on the surface. Thus, by reducing the spray pressure and by applying the electric voltage higher than -20 KV to charge the droplets electrostatically, we could produce the spangle free galvanized coating layer without pitting.

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