• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.1138-1139
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• 2006

The present study has shown that the effect of boron and phosphorus in Ni-Cr-Si-X alloy to interfacial reactions and bonding strength of diamond-steel substrate, and the influence of various construction parameters on the formation of the topography of the tool. And these factors are required to making a good brazed tool. The microstructures and phase change of the brazed region were analyzed into SEM, EDS. According to the electron probe microanalysis, while brazing, the chromium present in the brazing alloy segregated preferentially to the surface of the diamond to form a chromium rich reaction product, which was readily wetted by the alloy.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.123-123
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• 2008

본 논문에서는 Cu의 ECMP 적용을 위해 $HNO_3$ 전해액의 active, passive, transient, trans-passive 영역을 I-V 특성 곡선을 통해 알아보았고, LSV (Linear sweep voltammetry)와 CV (Cyclic voltammetry)법을 통하여 전기화학적 특성을 비교 분석하였다.

• Transactions on Electrical and Electronic Materials
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• v.10 no.6
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• pp.189-192
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• 2009

The leakage current in a CMOS image sensor (CIS) can have various origins. Leakage current investigations have focused on such things as cobalt-salicide, source and drain scheme, and shallow trench isolation (STI) profile. However, there have been few papers examining the effects on leakage current of nitride stringers that are formed by gate sidewall etching. So this study reports the results of a series of experiments on the effects of a nitride stringer on real display images. Different step heights were fabricated during a STI chemical mechanical polishing process to form different nitride stringer sizes, arsenic and boron were implanted in each fabricated photodiode, and the doping density profiles were analyzed. Electrons that moved onto the silicon surface caused the dark leakage current, which in turn brought up the speckle defect on the display image in the CIS.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2002.05a
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• pp.274-278
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• 2002

The purpose of this study was to characterize the reaction of Cu surface with Cu slurry and CMP performance as a function of additives in CMP slurry. The polish rate of Cu was dependent on the kind of organic acids added in slurry. It was considered that polish rate of Cu was dependent on the concentration of carboxylates and mean particle size. When the etchant and oxidant were added in slurry, the highest removal rate and lower etch rate were measured at neutral pH. The addition of etchant, oxidant and pH adjustor played key roles of CMP ability in slurry. As the pH increased, polish rate of Cu was increased by the enhanced the mechanical effects due to effective dispersion of slurry particles. Alumina abrasives was more desirable for 1st step slurry because of high removal rate of Cu and high selectivity ratio among TaN and Cu.

• Journal of Environmental Science International
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• v.16 no.3
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• pp.255-260
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• 2007

The photocatalytic decolorization of Rhodamine B (RhB) was studied using packed-bed reactor and immobilized $TiO_2/UV$ System. The 20 W UV-A, UV-B and UV-C lamps were employed as the light source. The effect of shape and surface polishing extent of reflector, distance between the reactor and reflector, reactor material were investigated. The results showed that the order of the initial reaction constant with reflector shape was round > polygon > W > rhombus. The optimum distance between the reactor and reflector was 2 cm. The initial reaction constant of quartz reactor was 1.46 times higher than that of tile PVDF reactor.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1357-1358
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• 2006

Indium tin oxide (ITO) thin film is a transparent electrode, which is widely applied to solar battery, illuminators, optical switches, liquid crystal displays (LCDs), plasma display panels (PDPs), and organic light emitting displays (OLEDs) due to its easy formation on glass substrates, goof optical transmittance, and good conductivity. ITO thin film is generally fabricated by various methods such as spray, CVD, evaporation, electron gun deposition, direct current electroplating, high frequency sputtering, and reactive DC sputtering. However, some problems such as peaks, bumps, large particles, and pin-holes on the surface of ITO thin film were reported, which caused the destruction of color quality, the reduction of device life time, and short-circuit. Chemical mechanical polishing (CMP) processis one of the suitable solutions which could solve the problems.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.362-365
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• 1999

This paper describes on thinning SDB SOI substrates by SDB technology and electrochemical etch-stop. The surface of the fabricated SDB SOI substrates is more uniform than that grinding or polishing by mechanical method, and this process is possible to accurate SOI thickness control. During Electrochemical etch-stop, leakage current versus voltage curves were measured for analysis of the open current potential (OCP) point and the passivation potential (PP) poin and determinated to anodic substrates were analyzed by using AFM and SEM, respectivelv.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.2
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• pp.114-118
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• 2009

PVA (polyvinyl alcohol) brush cleaning method is a typical cleaning method for semiconductor cleaning process especially post-CMP cleaning. PVA brush contacts with the wafer surface and abrasive particle, generating the contact rotational torque of the brush, which is the removal mechanism. The brush rotational torque can overcome theoretically the adhesion force generated between the abrasive particle and wafer by zeta potential. However, after CMP (chemical mechanical polishing) process, many particles remained on the wafer because the brush was contaminated in previous post-CMP cleaning step. The abrasive particle on the brush redeposits to the wafer. The level of the brush contamination increased according to the cleaning run time. After cleaning the brush, the level of wafer contamination dramatically decreased. Therefore, the brush cleanliness effect on the cleaning performance and it is important for the brush to be maintained clearly.

• Journal of Korean Society of Water and Wastewater
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• v.13 no.3
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• pp.29-35
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• 1999

The purpose of this study is to remove the organics, nitrogen and phosphorus using biosorption for the domestic sewage. The new process using biosorption is based on the methods of contact-stabilization, which remove the organics by absorbing them to the surface of the microorganism in the activated sludge. This process consists of biosorption reactor, biosorption clarifier, nitrifying reactor, nitrifying clarifier, denitrifying reactor, phosphorus uptake(polishing) reactor and final clarifier. The efficiency of removal could be reached 91% for organics, 76% for nitrogen, 90% for phosphorus in Eujungbu pilot plant. We operated the plant which irrigated $10m^3$ per day for sewage. During our operation the HRT(Hydraulic Retention time) was maintained for 10.5hr, but it could be reduced as 8.5hr according to our operation results.

• Proceedings of the Korean Institute of Building Construction Conference
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• 2013.11a
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• pp.21-22
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• 2013

Nowadays, the fiber which mixed with concrete matrix always has low adhesion with cement paste. It's difficult to use fiber to reinforce the structure. For more adding fiber in concrete would cause some problems as the low flowability and surface polishing. Further study is needed in fiber using. In this research, further study in fiber reinforced concrete has been invested. Various fibers with different properties have been used to prevent cracking. Fiber reinforced concrete's fundamental properties as slump, air content, compressive strength and tensile strength have been tested. Optimum type of the fiber and optimum addition ratio of fiber has been invested to increase the utility of the fiber which used in concrete.