Phase Change Characteristics of Aux(Ge2Sb2Te5)1-x (x=0, 0.0110, 0.0323, 0.0625) Thin Film for PRAM (PRAM을 위한 Aux(Ge2Sb2Te5)1-x (x=0, 0.0110, 0.0323, 0.0625) 박막의 상변환 특성)
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- Journal of the Korean Institute of Electrical and Electronic Material Engineers
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- v.24 no.5
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- pp.404-409
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- 2011