• 한국전기전자재료학회논문지
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• 제26권10호
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• pp.754-759
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• 2013

Aluminum oxide($Al_2O_3$) film deposited by atomic layer deposition (ALD) is known to supply excellent surface passivation properties on crystalline Si surfaces. Since $Al_2O_3$ has fixed negative charge, it forms effective surface passivation by field effect passivation on the rear side in p-type silicon solar cell. However, $Al_2O_3$ layer formed by ALD process needs very long process time, which is not applicable in mass production of silicon solar cells. In this paper, plasma-assisted ALD(PA-ALD) was applied to form $Al_2O_3$ to reduce the process time. $Al_2O_3$ synthesized by ALD on c-Si (100) wafers contains a very thin interfacial $SiO_2$ layer, which was confirmed by FTIR and TEM. To improve passivation quality of $Al_2O_3$ layer, the deposition temperature was changed in range of $150{\sim}350^{\circ}C$, then the annealing temperature and time were varied. As a result, the silicon wafer with aluminum oxide film formed in $250^{\circ}C$, $400^{\circ}C$ and 10 min for the deposition temperature, the annealing temperature and time, respectively, showed the best lifetime of 1.6ms. We also observed blistering with nanometer size during firing of $Al_2O_3$ deposited on p-type silicon.

• 공업화학
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• 제16권4호
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• pp.507-512
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• 2005

리튬 이온 2차 전지의 부극으로 사용되는 탄소전극은 초기 충전시 전극 표면에 Solid Electrolyte Interphase (SEI)라고 불리는 부동태 피막을 형성한다. 초기 충전과정에서의 용매분해로 형성된 막은 충방전 용량에 큰 영향을 주는 것으로 조사되었다. 본 연구에서는 Kawasaki Mesophase Fine Carbon 부극과 1 M $LiPF_6,EC:DEC$ (1:1, 부피비)에 $Li_2CO_3$를 첨가하여 전극/전해질 계면에서 초기충전 온도에 따라 형성되는 부동태 피막의 전기화학적 특성을 시간대 전압법, 순환 전압-전류법, 임피던스법을 이용하여 조사하였다. 관찰된 결과에 따르면, 용매분해 반응이 일어날 때 리튬 이온의 전도도에 따라 용매분해 전위가 달라졌으며, 저온으로 갈수록 $Li^+$ 이온의 전도성이 떨어져 분해 전위 차이가 나타남을 알았다. 또한 여러 온도조건에서 초기 충전시 형성된 피막의 저항은 온도별로 달라짐을 확인하였다.

• 한국표면공학회지
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• 제43권6호
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• pp.272-277
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• 2010

We investigated the life time characteristics of OLED device with aluminium oxide ($AlO_x$) passivation film on glass substrate and polyethylene terephthalate (PET) substrate by RF magnetron sputtering for the transparent barrier film applied to flexible OLED device. Basic buffer layer was determined as $Alq_3$(500 nm)-LiF(300 nm)-Al(1200 nm), and the most suitable aluminium oxide ($AlO_x$) film have been formed when the partial volume ratio of oxygen was 20% and the sputtering power was 100 watt and the minimum thickness of buffer was $2\;{\mu}m$. $AlO_x$/epoxy hybrid film was also used as a effective passivation layer for the purpose of improving life time characteristics of OLED devices with the glass substrate and the plastic substrate. Besides, the simultaneous deposition of $AlO_x$/epoxy film on back side of PET could result in better improvement of life time.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.269-270
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• 2005

A hybrid passivation method using parylene and silicon dioxide combination layer for a flexible organic light emitting diode (FOLED) was applied on a polycarbonate substrate. A parylene coating by vapor polymerization method is a highly effective passivation process for the FOLED, and it applies all top surface and the edges of the FOLED device. In order to minimize the permeation of moisture and oxygen from the top surface of the device, an additional layer of silicon dioxide was deposited over the parylene coated layer. It was found that the water vapor transmittance rate (WVTR) of parylene (15 m-in-thickness) / SiO2 (0.3$\mu$m-in-thickness) combination layers deposited on polycarbonate film was decreased under the value of 10-3 g/m2day. The FOLED with the hybrid passivation showed remarkably longer lifetime characteristics in the ambient conditions than the non-passivated FOLED. The lifetime of the passivated FOLED was 400 hours and it was more than ten times over the lifetime of the convectional non-passivated FOLED.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 추계학술대회 논문집
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• pp.468-472
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• 1997

The effect of the surface state on the quantum efficiency of underlying GaAs/AlGaAs multi-quantum well(MQW) structures consisting of three GaAs quantum wells with different thickness, is studied by low temperature photoluminescence(PL). The structure was grown by molecular beam epitaxy(MBE) on (100) GaAs substrate. The thickness of three GaAs quantum wells was 3, 6 and 9 nm, respectively. The MQWs were placed apart from 50 nm AlGaAs edge-barriers including two inner-barriers with 15 nm in thickness. The samples used in this study were prepared with different growth temperatures. Particularly, the hydrogen passivation effect to the 9 nm quantum well located at near surface appeared much stronger than any others. Transition energy and optical gain related to the hydrogen passivation effects on the multi-quantum well structure was calculated by transfer matrix method.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1994년도 추계학술대회 논문집 학회본부
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• pp.205-208
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• 1994

The purpose of this study is to research and develop solid polymer electrolyte(SPE) for Li secondary battery. PEO-$LiClO_4$ electrolyte with plasticizer is very unstable. Passivation phenomena in polymer electrolyte cell was described by the SPL model. The time dependance of the impedance indicates that a passivation layer grows rapidly on the Li surface. However, the growing of passivation layer on the Li surface can be restrained by addition of zeolite to the PEO electrolyte. It suggested that addition of zeoliteto to the PEO-$LiClO_4$ electrolyte effectively controls the formation of a passivation layer on Li electrode.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 추계학술대회 초록집
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• pp.55.2-55.2
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• 2010

최근 태양전지에 대한 연구가 본격적으로 진행 중인 가운데 Local back contact 태양전지에 대한 연구가 새로운 이슈로 떠오르고 있다. LBC 구조의 태양전지는 후면 passivation에 대한 최적화 공정이 가장 중요하다. 후면 passivation으로 사용되는 물질로는 $SiO_2$, SiNx, $Al_2O_3$ 등의 산화막이 대표적이다. 본 연구에서는 LBC 구조 태양전지의 후면 passivation 박막으로 사용되는 $SiO_2$ 산화막의 공정가변에 따른 박막의 특성을 비교 분석하였다. $SiO_2$ 성장은 RTP를 사용하였다. 성장 온도 $850^{\circ}C$의 온도에서 진행하였으며, 4L/min의 $O_2$분위기에서 진행하였다. 공정 시간 5분 일 때 12.5nm, 15분 일 때 21.7nm의 두께의 박막을 성장 시킬 수 있었다. Carrier lifetime 확인 결과 박막의 두께가 얇을수록 lifetime이 향상함을 확인 할 수 있었고, C-V 측정을 통한 charge 비교를 통해 두께가 얇은 박막 일수록 더 적은 positive charge를 갖고있는 것을 확인 할 수 있었으며 이를 통해 passivation 효과가 우수함을 확인 할 수 있었다.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2006년도 춘계학술발표회 초록집
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• pp.36-36
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• 2006

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 1999년도 추계학술발표회 초록집
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• pp.40-40
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• 1999

• E2M - 전기 전자와 첨단 소재
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• 제8권4호
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• pp.418-425
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• 1995

The surface of GaAs was treated by using the 0.1M solution of N $a_{2}$S.9 $H_{2}$O. The passivation of the surface in this sample was investigated by the photoreflectance(PR) experiment. The surface electric field( $E_{s}$) and built-in voltage( $V_{bi}$ ) discussed from Franz-Keldysh oscillation of PR signals. The density of surface states and Fermi level of GaAs treated with N $a_{2}$S.9 $H_{2}$O for 40min were determined 1.61*10$^{12}$ c $m^{-2}$ and 0.73eV. These values were about 15 and 10% smaller than those in untreated sample.e.