• 보존과학회지
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• 제33권6호
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• pp.507-518
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• 2017

Through a combination of scientific analytical methods, the coloring materials used in $20^{th}$ century paintings in historical churches of Baclayon, Dauis and Loay, which are municipalities in Bohol, Philippines, were studied. Inorganic pigments were identified using SEM-EDS and XRD. Iron-based pigments were commonly found in the paintings, yielding dark yellow and brown colors. Zinc oxide was identified as the white pigment in the ceiling paintings of Dauis Church and Loay Church, while titanium dioxide was detected in the column painting in Baclayon Church. Organic analysis showed the presence of Pigment Yellow 3, a synthetic organic pigment. Paint layers, as well as other components of the samples such as grounds and metal leaves, were examined microscopically. It was observed that different types of grounds were applied on different types of surfaces. Moreover, organic pigments were found in combination with white extender materials. Microscopic examination also revealed alterations in the artworks, such as the overpaint layer found in the samples from Baclayon Church cornice and the imitation metal leaf layers applied over the original gilt surface in the Loay Church retablo.

• 한국전기전자재료학회논문지
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• 제21권1호
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• pp.1-4
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• 2008

The electrical characteristics of polycrystalline silicon (poly-Si) thin film transistor (TFT) crystallized by excimer laser annealing (ELA) method were evaluated, The polycrystalline silicon thin-film transistor (poly-Si TFT) has higher electric field-effect-mobility and larger drivability than the amorphous silicon TFT. However, to poly-Si TFT's using conventional processes, the temperature must be very high. For this reason, an amorphous silicon film on a buried oxide was crystallized by annealing with a KrF excimer laser (248 nm)to fabricate a poly-Si film at low temperature. Then, High permittivity $HfO_2$ of 20 nm as the gate-insulator was deposited by atomic layer deposition (ALD) to low temperature process. In addition, the solid phase crystallization (SPC) was compared to the ELA method as a crystallization technique of amorphous-silicon film. As a result, the crystallinity and surface roughness of poly-Si crystallized by ELA method was superior to the SPC method. Also, we obtained excellent device characteristics from the Poly-Si TFT fabricated by the ELA crystallization method.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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• pp.1291-1293
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• 2005

Hybrid insulator pentacene thin film transistors (TFTs) were fabricated with thermally grown oxide and cross-linked polyvinylalcohol (PVA) including surface treatment by dilute ploymethylmethacrylate (PMMA) layers on $n^+$ doped silicon wafer. Through the optimization of $SiO_2$ layer thickness in hybrid insulator structure, carrier mobility was increased to above 35 times than that of the TFT only with the gate insulator of $SiO_2$ at the same transverse electric field. The carrier mobility of 1.80 $cm^2$/V-s, subthreshold swing of 1.81 V/decade, and $I_{on}$/ $I_{off}$ current ratio > 1.10 × $10^5$ were obtained at low bias (less than -30 V) condition. The result is one of the best reported performances of pentacne TFTs with hybrid insulator including cross-linked PVA material at low voltage operation.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.149-149
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• 2008

Metal-Insulator-Metal(MIM) capacitors have been studied extensively for next generation of high-density dynamic random access memory (DRAM) devices. Of several candidates for metal electrodes, Ru or its conducting oxide $RuO_2$ is the most promising material due to process maturity, feasibility, and reliability. ALD can be used to form the Ru and RuO2 electrode because of its inherent ability to achieve high level of conformality and step coverage. Moreover, it enables precise control of film thickness at atomic dimensions as a result of self-limited surface reactions. Recently, ALD processes for Ru and $RuO_2$, including plasma-enhanced ALD, have been studied for various semiconductor applications, such as gate metal electrodes, Cu interconnections, and capacitor electrodes. We investigated Ru/$RuO_2$ thin films by thermal ALD with various deposition parameters such as deposition temperature, oxygen flow rate, and source pulse time. Ru and $RuO_2$ thin films were grown by ALD(Lucida D150, NCD Co.) using RuDi as precursor and O2 gas as a reactant at $200\sim350^{\circ}C$.

• 한국주조공학회지
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• 제27권3호
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• pp.126-130
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• 2007

Oxidation behavior of CaO added Mg and Mg-5Al alloys was investigated. At $500^{\circ}C$, oxidation rate of pure Mg was abruptly increased, while that of CaO added Mg was remarkably reduced with increasing CaO content. As a result of surface analysis by AES, there was the thin oxide layer mixed with MgO and CaO in CaO added Mg. Oxidation behavior of CaO added Mg was similar to that of Ca added Mg. Oxidation rate of 0.6CaO added Mg-5Al alloy was much lower than that of Mg-5Al alloy at $500^{\circ}C$ and both alloys showed the linear weight change at $400^{\circ}C$.

• 전자공학회논문지D
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• 제35D권7호
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• pp.72-78
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• 1998

This paper is focused on the fabrication of reliable novel antifuse, which could operate at low voltage along with the improvement in OFF and ON-state properties. The fabricated antifuse consists of Al/BaTi$_{2}$O$_{3}$/SiO$_{2}$/TiW-silicide structure. Through the systematic analyses for bottom metal and the intermetallic insulator, material and electri cproperties were investiaged. TiW-silicide as the bottom electrode had smooth surface with average roughness of 11.angs. at 10X10.mu.m$^{2}$ and was bing kept as-deposited SiO$_{2}$ film stable. Amorphous BaTi$_{2}$O$_{3}$ film as the another insulator was chosen because of its low breakdown strength (2.5MV/cm). breakdown voltage of antifuse is remarkably reduced by using BaTi$_{2}$O$_{3}$ film, and leakage current of that maintained low level due to the SiO$_{2}$ film. Low ON-resistance (46.ohm./.mu.m$^{2}$) and low programming voltage(9.1V) can be obtained in theses antifuses with 220.angs. double insulator layer and 19.6X10$^{-6}$ cm$^{2}$ area, while keeping sufficient OFF-state reliability (less than 1nA).

• Corrosion Science and Technology
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• 제2권4호
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• pp.178-182
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• 2003

Slow Strain Rate Tests (SSRT) were carried out to investigate the effect of environmental factors on the Stress Corrosion Cracking (SCC) susceptibility of 3.5NiCrMoV steels used in discs for Low-Pressure (LP) steam turbines in electric power generating plants. The influences of dissolved oxygen on the stress corrosion cracking of turbine steel were studied, For this purpose, specimens were strained at variously oxygenated conditions at $150^{\circ}C$ in pure water. When the specimen was strained with $1{\times}10^{-7}s^{-1}$ at $150^{\circ}C$ in pure water, increasing concentration of dissolved oxygen decreased the elongation and the UTS. The corrosion potential and the corrosion rare increased as the amounts of dissolved oxygen increased. The increase of the SCC susceptibility of the turbine steel in a highly dissolved oxygen environment is due to the non protectiveness of the oxide layer on the turbine steel surface and the increase of the corrosion current. These results clearly indicate that oxygen concentration increases Stress Corrosion Cracking susceptibility in turbine steel at $150^{\circ}C$.

• Journal of Electrochemical Science and Technology
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• 제9권3호
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• pp.176-183
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• 2018

In this study, a $Li_2ZrO_3$ coated $Li[Ni_{0.8}Co_{0.15}Al_{0.05}]O_2$ (NCA) cathode was applied to an all-solid-state cell employing a sulfide-based solid electrolyte. Sulfide-based solid electrolytes are preferable for all-solid-state cells because of their high ionic conductivity and good softness and elasticity. However, sulfides are very reactive with oxide cathodes, and this reduces the stability of the cathode/electrolyte interface of all-solid-state cells. $Li_2ZrO_3$ is expected to be a suitable coating material for the cathode because it can suppress the undesirable reactions at the cathode/sulfide electrolyte interface because of its good stability and high ionic conductivity. Cells employing $Li_2ZrO_3$ coated NCA showed superior capacity to those employing pristine NCA. Analysis by X-ray photoelectron spectroscopy and electron energy loss spectroscopy confirmed that the $Li_2ZrO_3$ coating layer suppresses the propagation of S and P into the cathode and the reaction between the cathode and the sulfide solid electrolyte. These results show that $Li_2ZrO_3$ coating is promising for reducing undesirable side reactions at the cathode/electrolyte interface of all-solid-state-cells.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.99-99
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• 2010

Recently, amorphous transparent oxide semiconductors (TOS) have been widely studied for many optoelectronic devices such as AM-OLED (active-matrix organic light emitting diodes). The TOS TFTs using a-IGZO channel layers exhibit a high electron mobility, a smooth surface, a uniform deposition at a large area, a high optical transparency, a low-temperature fabrication. In spite of many advantages of the sputtering process such as better step coverage, good uniformity over large area, small shadow effect and good adhesion, there are not enough researches about characteristics of a-IGZO thin films. In this study, therefore, we focused on the electrical properties of a-IGZO thin films as a channel layer of TFTs. TFTs with the a-IGZO channel layers and Y2O3 gate insulators were fabricated. Source and drain layers were deposited using ITO target. TFTs were deposited on unheated non-alkali glass substrates ($5cm{\times}5cm$) with a sintered ceramic IGZO disc (3 inch $\varnothing$, 5mm t), Y2O3 disc (3 inch $\varnothing$, 5mm t) and ITO disc (3 inch $\varnothing$, 5mm t) as a target by magnetron sputtering method. The O2 gas was used as the reactive gas. Deposition was carried out under various sputtering conditions to investigate the effect of sputtering process on the characteristics of a-IGZO thin films. Correlation between sputtering factors and electronic properties of the film will be discussed in detail.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2010년도 춘계학술발표대회
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• pp.27.2-27.2
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• 2010

In recent years, there is a strong requirement of low cost, stable microelectro mechanical systems (MEMS) for resonators, microswitches and sensors. Most of these devices consist of freely suspended microcantilevers, which are usually made by the etching of some sacrificial materials. Herein, we have attempted to use Si nanowires, inherited from the parent Si wafer, as a sacrificial material due to its porosity, low cost and ease of fabrication. Prior to the fabrication of the Si nanowires silver nanoparticles were continuously formed on the surface of Si wafer. Vertically aligned Si nanowires were fabricated from the parent Si wafers by aqueous chemical route at $50^{\circ}C$. Afterwards, the morphological and structural characteristics of the Si nanowires were investigated. The morphology of nanowires was strongly modulated by the resistivity of the parent wafer. The 3-step etching of nanowires in diluted KOH solution was carried out at room temperature in order to control the fast etching. A layer of $Si_3N_4$ (300 nm) was used for the selective fabrication of nanowires. Finally, a freely suspended bridge of zinc oxide (ZnO) was fabricated after the removal of nanowires from the parent wafer. At present, we believe that this technique may provide a platform for the inexpensive fabrication of futuristic MEMS.