• Journal of the Korean Applied Science and Technology
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• v.31 no.2
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• pp.176-182
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• 2014

Using alkali treatment solution, neutrality treatment solution and acid treatment solution, the surface corrosion layer of copper plates and bronze plates that have been artificially corroded using HCl, $H_2SO_4$ and $HNO_3$ solutions were removed. In the case of alkali treatment solution, only air oxidation in the form of black tenorite and white cuproous chloride remained without being removed. In the case of using a neutrality treatment solution, a anhydrous type layer of reddish brown cupric chloride remained without being removed, together with this black and white corrosion substance. In the case of using an acid treatment solution, this red corrosion substance also remained, but all of the oxide was removed on the surface of the specimen that was treated by alternatively using alkali treatment solution and acid treatment solution. In the case of this treatment solution with the order of alkali-acid, oxidation no longer proceeded only through the distilled water cleaning process after treatment, thereby showing that oxidation from the cleaning solution no longer proceeded.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.478.2-478.2
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• 2014

Atomic layer deposition (ALD) provides self-limiting processes based on chemisorption-based reactions. Such unique features allow for superior step coverage, atomic-scale control in thickness, and surface-dependent reaction controls. Furthermore, the surface-limited deposition enables the artificial deposition of oxide and/or metallic materials onto the porous systems as long as the supply is guaranteed in terms of time in providing reactant species and removing the byproducts and redundant reactants. The unique feature of atomic layer deposition is applied to solid oxide fuel cells whose incorporates two porous cathode and anode compartments in addition to the ionic electrolyte. Specific materials are deposited to the surface sites of porous electrodes, with the aim to controlling the triple phase boundaries crucial for the optimized SOFC performances. The effect of ALD on the SOFC performance is characterized using current-voltage characteristics in addition to frequency-dependent impedance spectroscopy. The pros and cons of ALD-controlled SOFCs are discussed toward high-performance SOFC systems.

• Journal of Sensor Science and Technology
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• v.9 no.5
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• pp.389-395
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• 2000

In this paper, we propose the formation of an $Al_2O_3$ pre-layer using a protective Si-oxide layer and Al layer. Deposition of a thin film layer of aluminum onto a Si surface covered with a thin Si-oxide layer and annealing at $800^{\circ}C$ led to the growth of epitaxial $Al_2O_3$ layer on Si(111). And ${\gamma}-Al_2O_3$ layer was grown on the $Al_2O_3$ per-layer. Etching of the Si substrate by $N_2O$ gas could be avoided in the initial growth stage by the $Al_2O_3$ pre-layer. It was confirmed that the $Al_2O_3$ pre-layer was effective in improving the surface morphology of the very thin ${\gamma}-Al_2O_3$ films.

• Journal of Korea Foundry Society
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• v.40 no.6
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• pp.135-145
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• 2020

Aluminum cast iron has excellent oxidation resistance, sulfurization resistance, and corrosion resistance. However, the ductility at room temperature is insufficient, and at temperatures above 600?, the strength drops sharply and practicality is limited. In the case of heat-resistant cast iron, high-temperature materials containing Cr and Ni account for 30 to 50% or more. However, these high-temperature materials are expensive. Aluminum heat-resistant cast iron is considered as a substitute for expensive heat-resistant materials. Oxidation due to the aging temperature and holding time conditions increases more in 0 wt.% Al-cast iron than in 2 and 4 wt.% Al-cast iron according to oxidized weight and gravimetric oxide layer thickness measurements. As a result of observing the cross-section of the oxide layer, it was found to contain 0 wt.% of Al-cast iron silicon oxide-containing SiO₂ or Fe₂SiO₄ oxide film. In cast iron containing aluminum, the thickness of the internal oxide layer due to aluminum increases as the aging temperature and retention time increase, and the amount of the iron oxide layer generated on the surface decreases.

• Journal of the Korean institute of surface engineering
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• v.34 no.2
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• pp.161-168
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• 2001

A Thermal Barrier Coating (TBC) can play an important role in protecting parts from harmful environments at high temperatures such as oxidation, corrosion, and wear in order to improve the efficiency of aircraft engines by lowering the surface temperature of the turbine blade. The TBC can increase the life span of the product and improve the operating properties. Therefore, in this study the mechanical and thermal properties of the TBC such as oxidation, fatigue and shock at high temperatures were evaluated. A samples of a bond coat (CoNiCrAlY) produced by the High Velocity Oxygen Fuel (HVOF) and Low Pressure Plasma Spray (LPPS) method were used. The thickness of the HVOF coating layer was approximately $450\mu\textrm{m}$ to 500$\mu\textrm{m}$ and the hardness number of the coating layer was between 350Hv and 400Hv. The thickness of the LPPS coating was about 350$\mu\textrm{m}$ to 400$\mu\textrm{m}$ and the hardness number of the coating was about 370Hv to 420Hv. The X-ray diffraction analysis showed that CoNiCrAlY coating layer of the HVOF and LPPS was composed of the $\beta$and ${\gamma}$phase. After the high temperature oxidation test, the oxide scale with about l0$\mu\textrm{m}$ to 20$\mu\textrm{m}$ thickness appeared at the coating surface on the Al-depleted zone was observed under the oxide scale layer.

• Korean Journal of Materials Research
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• v.14 no.6
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• pp.413-419
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• 2004

Recently, Silicon On Insulator (SOI) devices emerged to achieve better device characteristics such as higher operation speed, lower power consumption and latch-up immunity. Nevertheless, there are many detrimental defects in SOI wafers such as hydrofluoric-acid (HF)-defects, pinhole, islands, threading dislocations (TD), pyramid stacking faults (PSF), and surface roughness originating from quality of buried oxide film layer. Although the number of defects in SOI wafers has been greatly reduced over the past decade, the turn over of high-speed microprocessors using SOI wafers has been delayed because of unknown defects in SOI wafers. A new characterization method is proposed to investigate the crystalline quality, the buried oxide integrity and some electrical parameters of bonded SOI wafers. In this study, major surface defects in bonded SOI are reviewed using HF dipping, Secco etching, Cu-decoration followed by focused ion beam (FIB) and transmission electron microscope (TEM).

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2015.11a
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• pp.265-265
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• 2015

Zinc Oxide 층은 역구조 유기 태양전지(Inverted Organic Photovoltaics, IOPV)에서 전자 수집 층으로 사용되는데, 전자 수집 및 전기 전도도 증가를 위하여 일반적으로 3차원 나노 구조체 및 양이온이 도핑된 Zinc Oxide 층이 사용된다. 본 연구에서는 저온 3차원 나노 구조체 및 음이온이 도핑된 Zinc Oxide 층을 적용하였으며, 그 결과 전자 수집 향상, 전기 전도도의 증가에 의하여 광전변환 효율(Power Conversion Efficiency, PCE)이 향상됨을 확인할 수 있었다.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2016.11a
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• pp.152-152
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• 2016

Anodizing is a technology to generate thicker and high-quality films than natural oxide films by treating metals via electrochemical methods. It is a technique to develop metals for various uses, and extensive research on the commercial use has been performed for a long time. Aluminum anodic oxide (AAO) is generate oxide films, whose sizes and characteristics depending on the types of electrolytes, voltages, temperatures and time. Electrochemical manufacturing method of nano structure is an efficient technology in terms of cost reduction, high productivity and complicated shapes, which receives the spotlight in diverse areas. The sulfuric acid was used as an anodizing electrolyte, controlling its temperature to $10^{\circ}C$. The anode was 5083 Al alloy with dimension of $5(t){\times}20{\times}20mm$ while the cathode was the platinum. The distance between the anode and the cathode was maintained at 3 cm. Agitation was introduced by magnetic stirrer at 300 rpm to prevent localized temperature rise that hinders stable growth of oxide layer. In order to observe surface characteristics with applied current density, the electrolyte temperature, concentration was maintained at constant condition for $10^{\circ}C$, 10 vol.%, respectively. To prevent hindrance of stable growth of oxide layer due to local temperature increase during the experiment, stirring was maintained at constant rate. In addition, using galvanostatic method, it was maintained at current density of $10{\sim}30mA/cm^2$ for 40 minutes. The cavitation experiment was carried out with an ultrasonic vibratory apparatus using piezo-electric effect with modified ASTM-G32. The peak-to-peak amplitude was $30{\mu}m$ and the distance between the horn tip and specimen was 1 mm. The specimen after the experiment was cleaned in an ultrasonic, dried in a vacuum oven for more than 24 hours, and weighed with an electric balance. The surface damage morphology was observed with 3D analysis microscope. As a result of the investigation, differences were observed surface hardness and anti-cavitation characteristics depending on the development of oxide film with applied current density.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.426.1-426.1
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• 2014

For high performance thin film solar cells, texturing surface, enhancing the optical absorptionpath, is pretty important. Textured ZnO:Al transparent oxide layer of high haze is commonly used in Si thin film solar cells. In this paper, novel deposition method for aluminum doped zinc oxide (ZnO:Al) on glass substrates is presented to improve the haze property. The broccoli structure of ZnO:Al layer was formed on chemically etched glass substrates, which showed high haze value on a wide wavelength range.The etching condition of the glass substrates can change not only the haze values of the ZnO:Al of in-situ growth but alsothe electrical and optical properties of the deposited ZnO:Al films.The etching mechanism of the glass substrate affecting on the surface morphology of the glass will be discussed, which resulted in variation of texture of ZnO:Al layer. The optical properties of substrate morphology were also analyzed with EDS and FTIR results. As a result, the high haze value of 85.4% was obtained in the wavelength range of 300 nm to 1100 nm. Furthermore, low sheet resistance of about 5~18 ohm/sq was achieved for different surface morphologies of the ZnO:Al films.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.319.1-319.1
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• 2013

Solid oxide fuel cells (SOFCs) have been recognized as one of emerging renewable energy sources, due to minimized pollutant production and high efficiency in operation. The performance of SOFCs is largely dependent on the electrode polarization which involves the oxidation/reduction in cathodes and anodes along with the charge transport of ions and electronic carriers. Atomic layer deposition is based on the alternate chemical surface reaction occurring at low temperatures with high uniformity and superior step coverage. Such features can be extended into the coating of metal oxide and/or metal layer onto the porous materials. In particular, the atomic layer deposition is can manipulated in controlling the charge transport in terms of triple phase boundaries, in order to control artificially the electrochemical polarization in electrodes of SOFC. The current work applied atomic layer deposition of metal oxides intro the electrodes of SOFCs. The corresponding effect was monitored in terms of the electrochemical characterization. The roles of atomic layer deposition in solid oxide fuel cells are discussed towards optimized towards long-term durability at intermediate temperature.