• 한국신재생에너지학회:학술대회논문집
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• 2006.11a
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• pp.489-489
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• 2006

• Journal of the Korean Ceramic Society
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• v.28 no.8
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• pp.647-653
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• 1991

In order to synthesize fine AlN powder by the direct nitridation of Aluminum metal power added LiF and BaF2 as additives was heated at 150$0^{\circ}C$ for 3 hrs. in nitrogen gas with flow rate of 20 mι/sec. Additives are promoted the nitridation by prevented the aggromerate of powders when 3% LiF and 2% BaF2 were added to Al metal powder. Rate of nitridation was about 100% and average size of AlN powders were very fine such as 0.3 ${\mu}{\textrm}{m}$. Specific surface area of synthesized AlN powder was 3.95$m^2$/g and also O2 and N2 contents were 2.595% and 33.25%, respectively.

• Journal of the Korean Institute of Telematics and Electronics
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• v.25 no.11
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• pp.1323-1328
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• 1988

Thermally grown $SiO_2$ films on silicon have been thermally nitrided in the $NH_3$ gas ambient and their properties have been investigated by analyzing the AES data and the results of the I-V and the C-V measurements. The Auger depth profile show that the nitrogen-rich layers are formed at the nitrided oxide film surface and near the $SiO_2$-Si interface. The higher the nitridation temperature is, the larger the refractive index of nitroxide film is. And the thinner the oxide film to be nitrided for the same nitridation temperature is, the larger the refractive index of nitroxide film is. When thin $SiO_2$ film is thermally nitrided, the I-V characteristics show the Fowler-Nordheim conduction fashion. Flatband voltages of $SiO_2$ films are shifted by nitridation, due to the fixed charge formation.

• Progress in Superconductivity
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• v.3 no.1
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• pp.49-55
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• 2001

Josephson junction arrays were fabricated by DC magnetron sputtering, self-aligning and reactive ion etching technique. The Al native oxide, formed by thermal oxidation, was used as the tunneling barrier of Nb/$Al-A1_2$$O_3$Nb trilayer. The arrays have 2,000 Josephson junctions with the area of $14\mu\textrm{m}$ $\times$ $46\mu\textrm{m}$. The gap voltages were in the range of 2.5 ~2.6 mV and the spread of critical current was $\pm$11~14%. When operated at 70~94 ㎓, the arrays generated zero-crossing steps up to 2.1~2.4 V. To improve transmission of microwave power and prevent diffusion of oxygen into Nb ground-plane while depositing $SiO_2$dielectric, we applied a plasma nitridation process to the Nb ground-plane. The microwave power was well propagated in Josephson junction arrays with nitridation. The difference in microwave transmission 7an be interpreted by the surface impedance change depending on nitridation.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.5
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• pp.729-736
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• 1990

Oxide (RTO), nitrided-oxide(NO), and reoxidized-nitrided-oxide(ONO) films were formed by sequential rapid thermal processing. The film composition was investigated by Auger electron spectroscopy(AES). The Si/SiO2 interface and SiO2 surface are nitrided more preferentially than SiO2 bulk. When the NO is reoxidized, [N](atomic concentration of N) in the NO film decreased` especially, the decrease of [N] at the surface is considerable. The weaker the nitridation condition is, the larger the increase of thickness is as the reoxidation proceeds. The elelctrical characteristics of RTO, NO, and ONO films were evaluated by 1-V, high frequency (1 MHz) C-V, and high frequency C-V after constant current stress. The ONO film-which has 8 nm thick initial oxide, nitrided in NH3 at 950\ulcorner for 60 s, reoxidized in O2 at 1100\ulcorner for 60 s-shows good electrical characteristics such as higher electrical breakdown voltage and less variation of flat band voltage under high electric field than RTO, and NO films.

• Proceedings of the KIEE Conference
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• 1988.07a
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• pp.785-787
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• 1988

The capacitance-voltage (C-V) chracteristics of thin nitrided thermal oxides prepared by rapid termal nitridation(RTN) have been studied. The threshold voltages were calculated using C-V measurement and found to vary as the concentration of acceptor and the thickness of oxynitride. When the Si02 films were annealed in NH3 a decrease in the positive oxide charge due to Si-N bond was observed. In the case applied frequency is high and low, the high frequency depletion capacitance was higher than that of low frequency, which is indicative of high frequency surface conduction by mobile surface charge.

• Proceedings of the Korean Vacuum Society Conference
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• 1996.06a
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• pp.40-41
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• 1996

Nitridation technique has been receiving much attention for the formation of a thin nitrided buffer layer on which high quality nitride films can be formedl. Particularly, gallium nitride (GaN) has been considered as a promising material for blue-and ultraviolet-emitting devices. It can also be used for in situ formed and stable passivation layers for selective growth of $GaAs_2$. In this work, formation of a thin nitrided layer is investigated. Nitrogen electron cyclotron resonance(ECR)-plasma is employed for the formation of thin nitrided layer. The plasma source used in this work is a compact ECR plasma gun3 which is specifically designed to enhance control, and to provide in-situ monitoring of plasma parameters during plasma-assisted processing. Microwave power of 100-200 W was used to excite the plasma which was emitted from an orifice of 25 rnm in diameter. The substrate were positioned 15 em away from the orifice of plasma source. Prior to nitridation is performed, the surface of n-type (001)GaAs was exposed to hydrogen plasma for 20 min at $300{\;}^{\circ}C$ in order to eliminate a native oxide formed on GaAs surface. Change from ring to streak in RHEED pattern can be obtained through the irradiation of hydrogen plasma, indicating a clean surface. Nitridation was carried out for 5-40 min at $RT-600{\;}^{\circ}C$ in a ECR plasma-assisted molecular beam epitaxy system. Typical chamber pressure was $7.5{\times}lO^{-4}$ Torr during the nitridations at $N_2$ flow rate of 10 seem.(omitted)mitted)

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1988.05a
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• pp.78-81
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• 1988

Nitroxide films were made from the $NH_3$ gas nitridation of as-grown $SiO_2$. The electrical characterization results including C-V characteristics and BT stress generally indicate that the high field stress instability and insulator-substrate interfacial characteristics are improved by nitridation of $SiO_2$. A C-V technique was used to determine the surface state density $N_{55}$ and then $N_{55}$ in the nitroxide-substrate interface was $8{\times}10(/eVcm^2$). This $N_{55}$ is related with 1/f noise was revealed experimentally and relationship was plotted and 1/f noise characteristics were also improved by nitridation of of $SiO_2$By the results of measurements on these films show that very thin thermal silicon nitroxide films can be used as gate dielectrics for future highly scaled-down VLSI device.

• Korean Chemical Engineering Research
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• v.60 no.1
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• pp.159-168
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• 2022

Catalytic activity in ammonia decomposition reaction was studied on Mo-Al nitride obtained through temperature programmed nitridation of calcined Mo-Al mixed oxide prepared by varying the MoO₃ quantity in the range of 10-50 wt%. N₂ sorption analysis, X-ray diffraction analysis (XRD), X-ray photoelectron spectroscopy (XPS) and H₂-temperature programmed reduction (H₂-TPR), and transmission electron microscopy (TEM) to investigate the physicochemical properties of the prepared catalyst were performed. After calcination at 600 ℃, the XRD of Mo-Al oxide showed γ-Al₂O₃ and Al₂(MoO₄)₃ phases, and the nitride after nitridation showed an amorphous form. The specific surface area after nitridation by topotactic transformation of MoO₃ to nitride was increased due to the formation of Mo nitride, and the Mo nitride was observed to be supported on γ-Al₂O₃. As for the catalytic activity in the ammonia decomposition reaction, 40 wt% MoO₃ showed the best activity, and as the nitridation time increases, the activity increased, and thus the activation energy decreased.

• Journal of the Korean Ceramic Society
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• v.28 no.6
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• pp.465-470
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• 1991

AlN powder was synthesized by carbothermal reduction and nitridation of aluminum hydroxides precipitated in 5∼11 pH range from Al2(SO4)3$.$18H2O aqueous solution. Nitridation reactivity of hydroxide, which depends on precipitation pH, reaction temperature and time, was examined by XRD analysis at 1200∼1350$^{\circ}C$ and compared with that of commercial ${\alpha}$-Al2O3. Hydroxides obtained at higher pH could be more easily nitridated and, considering DTA/TG and BET results, the reason seems to be specific surface area difference of reactants depending on the content of decomposed structural water and the transition rate from transition-Al2O3 to ${\alpha}$-Al2O3.