• The Korean Journal of Malacology
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• v.32 no.3
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• pp.149-155
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• 2016

To assess the effects of environmental factors on the sustainability of cultured ark shell Scapharca broughtonii production, we investigated the habitat characteristics of shellfish-farming bays (Gangjin Bay, Yeoja Bay, Keoje Bay and Deukryang Bay). We measured the physiochemical parameters (temperature, salinity, dissolved oxygen, nutrients, chemical oxygen demand and Chlorophyll a) and the geochemical characteristics (chemical oxygen demand, ignition loss, C/N ratio and C/S ratio). Surface sediments were collected from several shellfish-farming bays to examine the geochemical characteristics of both the benthic environment and heavy metal pollution. The grain sizes for Gangjin Bay, Yeoja Bay and Keoje Bay were similar, at the ratio of silt and clay in comparison with Deukryang bay of it. The C/N ratio was more than 5.9, reflecting the range arising from the mix of marine organisms and organic matter. The C/S ratio (more than 4.2) showed that the survey area had anoxic or sub-anoxic bottom conditions. The index of accumulation rate (Igeo) of the metals showed that those research areas can be classified as heavily polluted, heavily to moderately polluted, or more or less unpolluted, respectively. We suggested that the growth of ark shell Scapharca broughtonii in the shellfish-farming bay was effected by the various environmental conditions.

• Korean Journal of Soil Science and Fertilizer
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• v.28 no.4
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• pp.312-318
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• 1995

To investigate the effect of N split application on the increasing ratio of yield and the yield of rice, urea and slow-releasing complex for sideband placement of fertilizer were applied in Jeonbuk series of Honam plain area. Increasing ratio of yield by N split application was higher in puddled drill seeding (PDS) than flooded direct seeding surface (FDSS) under split application of 40-0-30-30% and 70-0-0-30% at basal, 3 leaf, 5 leaf and panicle initiation stage, respectively. It was also higher in LCU application of 70 % of total urea amount than urea application but was not different between two methods of seeding in urea application. Nitrogen ratio transfered to rough grain of rice was higher in FDSS than PDS, errespective of methed of split application, except for the split application of 0, 40, 30 and 30% N fertilizer at basal, 3 leaf, 5 leaf and panicle initiation stage, respectively. Nitrogen amount outflowed by artificial drainage for paddy field drying in a day after application of fertilizer was 1,134g/10a in PDS. $NH_4-N$ incerased higher in PDS than FDSS under split application of urea, while was versa under LCU application.

• Korean Journal of Materials Research
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• v.4 no.1
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• pp.9-23
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• 1994

Epitaxial $CoSi_2$ layer has been grown on NaCl(100) substrate at low deposition temperature($200^{\circ}C$) by multitarget bias cosputter deposition(MBCD). The phase sequence and crystallinity of deposited silicide as a function of deposition temperature and substrate bias voltage were studied by X-ray diffraction(XRD) and transmission electron microscopy(TEM) analysis. Crystalline Si was grown at $200^{\circ}C$ by metal induced crystallization(M1C) and self bias effect. In addition to, the MIC was analyzed both theoretically and experimentally. The observed phase sequence was $Co_2Si \to CoSi \to Cosi_2$ and was in good agreement with that predicted by effective heat of formation rule. The phase sequence, the CoSi(l11) preferred orientation, and the crystallinity had stronger dependence on the substrate bias voltage than the deposition temperature due to the collisional cascade mixing, the in-situ cleaning, and the increase in the number of nucleation sites by ion bombardment of growing surface. Grain growth induced by ion bombardment was observed with increasing substrate bias voltage at $200^{\circ}C$ and was interpreted with ion bombardment dissociation model. The parameters of $E_{Ar}\;and \alpha(V_s)$ were chosen to properly quantify the ion bombardment effect on the variation in crystallinty at $200^{\circ}C$ with increasing substrate bias voltage using Langmuir probe.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.23 no.1
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• pp.51-57
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• 2013

We have applied mechanical alloying (MA) to produce Heusler $Fe_2VAl$ thermoelectric alloy using a mixture of elemental $Fe_{50}V_{25}Al_{25}$ powders. An optimal milling and heat treatment conditions to obtain the single phase of Fe2VAl compound with fine microstructure were investigated by X-ray diffraction and differential scanning calorimetry (DSC) measurement. The $Fe_{50}V_{25}Al_{25}$ MA sample ball-milled for 60 hours exhibits a bcc ${\alpha}$-(Fe,V,Al) solid solution. Single phase of Heusler $Fe_2VAl$ compound can be obtained by MA of $Fe_{50}V_{25}Al_{25}$ mixture for 60 hours and subsequently heated up to $700^{\circ}C$. Sintering of the MA powders was performed in a spark plasma sintering (SPS) machine using graphite dies at $900{\sim}1000^{\circ}C$ under 60 MPa. The Vickers hardness of bulk sample sintered at $1000^{\circ}C$ was high value of Hv 870. All compact bodies have a high relative density above 90 % with metallic glare on the surface.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.23 no.1
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• pp.37-43
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• 2013

Conductivity of LSGMC materials were affected by secondary phase segregation, composition and synthetic route. $La_{0.8}Sr_{0.2}Ga_{0.8}Mg_{0.1}Co_{0.1}O_{3-{\delta}}$ (LSGMC) powders were prepared using the glycine nitrate process to produce high surface area and compositionally homogeneous powders. The powders were synthesized with different 0.5, 1, 1.5, 2, 2.5 of glycine/cation molar ratios. A single perovskite phase from the synthesized powders was characterized with X-ray diffraction patterns. The obtained sintered pellets showed the dense grain microstructure. In case of 1.5 molar ratio, its density was higher than the others. The electrical conductivity measured at $800^{\circ}C$ was observed to be 0.131 $Scm^{-1}$. In addition, the linear thermal expansion behavior was indicated between $25^{\circ}C$ and $800^{\circ}C$.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.31 no.2
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• pp.73-77
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• 2021

Ga-doped ZnO thin films by RF magnetron sputtering process were synthesized according to the deposition conditions of O2 and Ar atmosphere gases, and rapid heat treatment (RTA) was performed at 600℃ in an N2 atmosphere. The thickness of the deposited ZnO : Ga thin film was measured, the crystal phase was investigated by XRD pattern analysis, and the microstructure of the thin film was observed by FE-SEM and AFM images. The intensity of the (002) plane of the X-ray diffraction pattern showed a significant difference depending on the deposition conditions of the thin films formed by O2 and Ar atmosphere gas types. In the case of a single thin f ilm doped with Ga under O2 conditions, a strong diffraction peak was observed. Under O2 and Ar conditions, in the case of a multilayer thin film with Ga doping, only a peak on the (002) plane with a somewhat weak intensity was shown. In the FE-SEM image, it was observed that the grain size of the surface of the thin film slightly increased as the thickness increased. In the case of a multilayer thin film with Ga doping under O2 and Ar atmosphere conditions, the specific resistance was 6.4 × 10-4 Ω·cm. In the case of a single thin film with Ga doping under O2 atmosphere conditions, the resistance of the thin film decreased. The resistance decreased as the thickness of the Ga-doped ZnO thin film increased to 2 ㎛, showing relatively a low specific resistance of 1.0 × 10-3 Ω·cm.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.31 no.1
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• pp.37-42
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• 2021

The effect of chemical composition on the structural and thermal properties of TiZrN thin films was studied. As the Zr fraction in the deposited TixZr1-xN (x = 0.87, 0.82, 0.7, 0.6, and 0.28) increased, microstructural changes consisted of reduction in the grain size and a gradual transition from columnar structure to granular structure were observed. In addition, it was also confirmed that a gradual crystal phase transition from TiN to TiZrN has occurred as the Zr fraction increased up to 0.4. After heat treatment at 900℃, Ti0.82Zr0.18N and Ti0.7Zr0.3N layers were converted to a form in which rutile phase TiO2 and TiZrO4 oxides coexist, while Ti0.6Zr0.4N layer was converted to TiZrO4 oxide. Among the five compositions of TiZrN films, the Ti0.6Zr0.4N showed the best high temperature stability and produced a significant enhancement in the thermal oxidation resistance of Inconel 617 through suppressing the surface diffusion of Cr caused by thermal oxidation of the Inconel 617 substrate.

• Journal of the Korean Magnetics Society
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• v.14 no.5
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• pp.196-200
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• 2004

In order to improve dendritic formation of Nd$_2$Fe$\_$14/B phase in the strip-cast Nd-Fe-B alloys that are frequently used for production of high energy sintered magnets, effect of small substitutional additives such as Cu (0.3～1.0 at. %) and Co (0.5～1.5 at.%) on the phase formation and microstructures of the strip-cast alloys based on Nd$\_$14/Fe$\_$80/B$\_$6/ were investigated. As the amount of Cu addition increased, formation of Nd$_2$Fe$\_$14/B dendrites along the direction normal to the strip surface was suppressed with the reduction of the strip thickness mainly due to the increase of fluidity of the melt. However, both the dendrites and their <001> preferred orientation along the direction normal to the strip surface were improved with the increase of the strip thickness as the amount of Co addition increased. The dendrites became finer after small amount of Cu or Co was added. While small copper additions tended to stabilize the formation of primary Fe, small cobalt additions suppressed it. When small amount of Zr was added, however, the dendrite structures were totally collapsed with excessive grain growth of Nd$_2$Fe$\_$14/B.

• Journal of the Korean Magnetics Society
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• v.6 no.4
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• pp.242-250
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• 1996

The effects of annealing in magnetic field after deposition on electromagnetic properties of $Ni_{81}Fe_{19}$ thin($400\;{\AA}$) films prepared by RF-magnetron sputtering were investigated in terms of microstructure and surface morphology. The coercivity of the films was decreased below $300^{\circ}C$ due to stress relief and recrystallization, while increased at $400^{\circ}C$ due to grain growth and increasing the surface roughness. And then, $4{\pi}M_{s}$, was almost independent of annealing temperatures. Increasing the annealing temperature. the electrical resistivity of films was decreased from $37\;{\mu}{\Omega}cm$ to $24\;{\mu}{\Omega}cm$, the magnetoresistance was nearly a constant of about $0.6\;{\mu}{\Omega}cm$, and the MR ratio was increased from 1.5 % to 3.1 %. Therefore, It was shown that increasing the magnetoresistive ratio was mainly affected by decreasing the electrical resistivity. Considering the practical application of the films for magnetoresistive heads, optimal annealing conditions was obtained after one hour annealing at $300^{\circ}C$ in 400 Oe unidirectional magnetic field.

• Applied Chemistry for Engineering
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• v.28 no.5
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• pp.576-580
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• 2017

In the present paper, the thermal deactivation characteristics of plate-type commercial $V_2O_5-WO_3/TiO_2$ SCR catalyst were investigated. For this purpose, the plate-type catalyst was calcined at different temperatures ranging from $500^{\circ}C$ to $800^{\circ}C$ for 3 hours. Structural and morphological changes were characterized byXRD, specific surface area, porosity, SEM-EDS and also NOx conversion with ammonia according to the calcine temperature. The NOx conversion decreased with increasing calcine temperature, especially when the catalysts were calcined at temperatures above $700^{\circ}C$. This is because the crystal phase of $TiO_2$ changed from anatase to rutile, and the $TiO_2$ grain growth and $CaWO_4$ crystal phase were formed, which reduced the specific surface area and pore volume. In addition, $V_2O_5$, which is a catalytically active material, was sublimated or vaporized over $700^{\circ}C$, and a metal mesh used as a support of the catalyst occurred intergranular corrosion and oxidation due to the formation of Cr carbide.