• Journal of the Korean Crystal Growth and Crystal Technology
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• v.12 no.3
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• pp.120-125
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• 2002

Si-wafers for solar cells were cast in a size of $50{\times}46{\times}0.5{\textrm}{mm}^3$ by vacuum casting method. The graphite mold coated by BN powder, which was to prevent the reaction of carbon with the molten silicon, was used. Without coating, the wetting and reaction of Si melt to graphite mold was very severe. In the case of BN coating, SiC was formed in the shape of tiny islands at the surface of Si wafer by the reaction between Si-melt and carbon of the graphite mold on the high temperature. The grain size was about 1 mm. The efficiency of Si solar cell was lower than that of Si solar cell fabricated on commercial single and poly crystalline Si wafer. The reason of low efficiency was discussed.

• Journal of the Korean Ceramic Society
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• v.30 no.12
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• pp.1029-1038
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• 1993

The microstructures of aluminas, included of dissolved CaO as $\alpha$-alumina seeded pseudo-boehmite hydrosol was gelled in plaster mold and doped of MgO as dipping of calcines(120$0^{\circ}C$-2h) into Mg-nitrate solution, were compared to the one of which additives are excluded during the gellation. It was formed the boundary layer of 300~350${\mu}{\textrm}{m}$ distance from surface to the inside, containing of approximately 500ppm CaO by dissolved Ca from plaster mold. As the MgO addition to the boundary layer with dissolved CaO, the microstructure of the layer was uniformed and inhibited the grian growth, compared to one of that additives be excluded specimen and of MgO doped-inside region. This result was considered as abnormal grain growth and effect of flat boundary formation be appeared by effects of dissolved CaO, were decreased by MgO co-doping.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.252.1-252.1
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• 2013

Hexagonal boron nitride (h-BN) is a two dimensional material which has high band-gap, flatness and inert properties. This properties are used various applications such as dielectric for electronic device, protective coating and ultra violet emitter so on. 1) In this report, we were growing h-BN sheet directly on sapphire 2"wafer. Ammonia borane (H3BNH3) and nickel were deposited on sapphire wafer by evaporate method. We used nickel film as a sub catalyst to make h-BN sheet growth. 2) During annealing process, ammonia borane moved to sapphire surface through the nickel grain boundary. 3) Synthesized h-BN sheet was confirmed by raman spectroscopy (FWHM: ~30cm-1) and layered structure was defined by cross TEM (~10 layer). Also we controlled number of layer by using of different nickel and ammonia borane thickness. This nickel film supported h-BN growth method may propose fully and directly growing on sapphire. And using deposited ammonia borane and nickel films is scalable and controllable the thickness for h-BN layer number controlling.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1998.06a
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• pp.87-90
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• 1998

ABSTRACT- we have analyzed the effect of microstructure and interface conditions on the anisotropic exchange filelds of NiO/NiFe bilayers. The NiO films were deposited by R.F. magentron sputtering. By using different atgon pressure NiO Films, Grain Size And Surface Roughness Of NiO can be manipulated. The exchange field is enhanced in the small granined NiO And This Increment Is Based On The Formation Of Small Domains In NiO

• Journal of Welding and Joining
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• v.3 no.2
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• pp.16-26
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• 1985

Post weld heat treatment(PWHT), at more than 600.deg. C, is essential to remove residual stress and hydrogen in weld HAZ and improve fatigue characteristics. However, residual stress during PWHT is responsible for PWHT embitterment and it promotes precipitation of impurities to grain boundary. In this paper, the effect of stress simulated residual stress on fatigue failure was evaluated by fatigue test, microhardness test and fractograph. The obtained results are summarized as follows; (1) The fatigue crack growth rate(da/dN) of parent and heat treated parent was affected by microstructure due to heat treatment and it depended on stress intensity factor (.DELTA.k). (2) The fatigue strength of weld HAZ was dependent on applied stress during PWHT and da/dN after PWHT was slower than as-weld. (3) Softening amount of weld HAZ was bigger than any other due to PWHT. Hardness value of weld HAZ was affected by heat treatment under the applied stress of 10 $kgf/mm^2$, but beyond 20 $kgf/mm^2$ it was increased by the applied stress rather than heat treatment. (4) Beyond the applied stress of 20 $kgf/mm^2$ during PWHT, intergranular fracture surface was observed and its amount was increased with applied stress during PWHT. (5) Effect of applied stress during PWHT on aspect of fracture surface was larger rather than that on fatigue crack growth behavior.

• Journal of the Korean Ceramic Society
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• v.26 no.2
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• pp.210-220
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• 1989

The properties of the powder of Al2O3-15v/o ZrO2(＋3m/o Y2O3) system prepared by co-precipitation method at the pH values of 7, 9, 10 and 11 were investigated. Al2(SO4)3.18H2O, ZrOCl2.8H2O and YCl3.6H2O were used as starting materials and NH4OH as a precipitation agent. Zirconium hydroxide decreased the specific surface area of aluminum hydroxide of AlOOH type, while increased the specific surface area of aluminum hydroxide of Al(OH)3 type, and formed co-network structure of Al-O-Zr type with the aluminum hydroxides. The rate of transition to $\alpha$-Al2O3 from co-precipitated materials occurred in the order of 7≒10, 9 and 11 of pH values. Al2O3 and ZrO2 interacted to bring about coupled grain growth, and the growth of ZrO2 crystallite size rapidly occurred within $\theta$-Al2O3 matrix. Segregation did not occur in the system Al2O3-15v/o ZrO2(＋3m/o Y2O3) and Y2O3 acted as a stabilizer to ZrO2. The lattice strain of tetragonal ZrO2 was increased by the constraint effect of Al2O3 matrix.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05b
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• pp.107-110
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• 2002

The optical memory devices of BST thin films to composite $(Ba_{0.7}\;Sr_{0.3})TiO_{3}$ using sol-gel method were fabricated by changing of the depositing layer number on $Pt/Ti/SiO_{2}/Si$ substrate. The structural properties of optical memory devices to be ferroelectric was investigated by fractal analysis and 3-dimension image processing. The thickness of BST thin films at each coating numbers 3, 4 and 5 times was $2500[\AA]$, $3500[\AA]$ and $3800[\AA]$. BST thin films exhibited the most pronounced grain growth. The surface morphology image was roughness with coating numbers. The thin films increasing with coating numbers shows a more textured and complex configuration.

• Journal of the Korean Ceramic Society
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• v.24 no.3
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• pp.257-262
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• 1987

The characteristics of cobalt oxide powders prepared by hot petroleum drying method from the cobalt acetate were evaluated by DTA/TGA, XRD, BET, SEM and density measurement. The cobalt oxide powder could be prepared by hot petroleum drying of the emulsion of cobalt acetate salt solution and the subsequent thermal decomposition of the acetate at 300$^{\circ}C$. As the concentration of the salt solution and the calcination temperature of the dried powder increased, the surface area of the synthesized powder decreased due to the particle growth, so that after sintering the density and grain size decreased. For the same concentration of the salt solution, the surface area and sinterability of the powder by hot petroleum drying increased in comparision with those by conventional drying.

• Journal of the Korean Vacuum Society
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• v.8 no.3B
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• pp.333-339
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• 1999

$RuO_2$ thin films were prepared with various deposition conditions by rf magnetron sputtering. The films were annealed in vacuum, air, and air-vacuum, after that, the structural and electrical properties of the films were investigated. As the substrate temperature increases, the preferred orientation of the films changes from (101) to (200), and the grain size increases; especially, at $500^{\circ}C$, the size considerably increases. The preferred orientation of the films changes from (200) to (101) and the roughness of surface increase with the increase in oxygen partial pressure. The lowest value of resistivity of $RuO_2$ we prepared is $1.5\times 10^{-5}\Omega\codt\textrm{cm}$ at the conditions of $400^{\circ}C$ and 10% of oxygen partial pressure. After the processes of annealing, the films deposited at $400^{\circ}C$ and a oxygen partial pressure of 10% were relatively stable. The films deposited at $500^{\circ}C$ have denser structure and smoother surface when the films are annealed in vacuum after annealing in air.

• Journal of the Korean institute of surface engineering
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• v.28 no.6
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• pp.376-385
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• 1995

Copper-chromium multilayers with a nominal bilayer thickness of about 400 $\AA$ (200 $\AA$ each) were prepared by dc magnetron sputtering and the evolution of microstructure during heat treatment was investigated by using x-ray diffractometry(XRD), Auger electron spectroscopy(AES) and transmission electron microscopy(TEM). It was observed that an amorphous phase with a thickness of about 40 $\AA$ was formed at the interfaces of the as-deposited Cu/Cr multilayered film using cross-sectional TEM. At elevated temperatures, the Cu(111) reflection showed increasing intensity and decreasing line-width as a result of copper grain growth. The intermixed amorphous phase disappeared after annealing at $250^{\circ}C$ for 1 h and the multilayer structure was stable up to $400^{\circ}C$ for 1 h annealing. At $600^{\circ}C$ annealing, it was observed that the multilayer structure was completely destroyed and copper and chromium phases were fully intermixed.