• 전기화학회지
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• 제4권1호
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• pp.14-20
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• 2001

단결정 Pt(100)/0.5M $H_2SO_4$ 및 0.5M LiOH수용액 계면에서 저전위 수소흡착(UPD H)과 과전위 수소흡착(OPD H)에 관한 Langmuir흡착등온식을 위상이동 방법을 이용하여 연구 조사하였다. 최적 중간주파수에서 위상이동 변화$({-\varphi}\;vs.\;E)$는 Langmuir흡착등온식$(\theta\;vs.\;E)$의 추정에 적용할 수 있는 유용한 실험 방법이다. 단결정 Pt(100)/0.5M $H_2SO_4$ 수용액 계면에서 과전위 수소흡착에 기인한 흡착평형상수(K)와 흡착표준자유에너지$({\Delta}G_{ads})$는 각각 $1.5\times10^{-4}$와 21.8kJ/mol이다. 단결정 Pt(100)/0.5M LiOH 수용액 계면에서 K는 음전위에 따라 1.9(UPD H)에서 $6.8\times10^{-6}$ (OPD H)또는 그 반대로 전이한다. 마찬가지로, ${\Delta}G_{ads}$는 음전위에 따라 -1.6kJ/mol (UPD H)에서 29.5kJ/mol (OPD H) 또는 그 반대로 전이한다. 전극속도론적 패러미터$(K,\; {\Delta}G_{ads})$의 전이는 단결정 Pt(100)전극표면의 UPD H와 OPD H에 기인한다. UPD H와 OPD H는 음극 $H_2$발생 반응을 위한 순차적 과정이 아니라 전극표면의 수소 흡착부위에 기인하는 독립적 과정이다.

• 전기화학회지
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• 제4권3호
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• pp.118-124
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• 2001

순환전압전류 및 교류임피던스 기법을 이용하여 다결정 $0.5M\;H_2SO_4$수용액 계면에서 음극 $H_2$발생 반응을 위한 과전위 전착(흡착)된 수소의 Langmuir흡착등온식을 연구조사 하였다. 다결정 $Au|0.5M\;H_2SO_4$수용액 계면에서, 최적중간주파수일 때 위상이동 $(0^{\circ}\leq{-\phi}\leq90^{\circ})$ 거동은 표면피복율$(1\geq{\theta}\geq0)$ 거동에 정확하게 상응한다. 최적중간주 파수일 때 위상이동 변화 $({-\phi}\;vs.\;E)$즉 위상이동 방법은 다결정 $Au|0.5M\;H_2SO_4$수용액 계면에서 음극 $H_2$발생 반응을 위한 과전위 전착(흡착)된 수소의 Langmuir 흡착등온식$(\theta\;vs.\;E)$을 추정할 수 있는 새로운 방법으로 사용될 수 있다. 다결정 $Au|0.5M\;H_2SO_4$ 수용액 계면에서, 과전위 전착(흡착)된 수소의 흡착평형상수(K)와 표준자유에너지 $({\Delta}G_{ads})$는 각각 $2.3\times10^{-6}$과 $32.2kJ\;mol^{-1}$이다.

• 한국임상수의학회지
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• 제22권1호
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• pp.21-25
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• 2005

This study was performed to assess therapeutic effect of the tibial plateau leveling osteotomy (TPLO) in dogs with experimentally transected cranial cruciate ligaments (CrCL). Nine healthy adult Beagle dogs were transected left CrCL under general anesthesia. The dogs were assigned to TPLO and non-TPLO control groups. The TPLO procedures for correcting the CrCL rupture in the left stifle of dogs were performed under sterile conditions. Before TPLO procedures, all dogs were screened by orthopedic and radiographic examinations. Dogs were lameness free for the previous three months, and when examined at the walk and trot on a hard surface, in a straight line and on a circle. Lateral and craniocaudal radiographs were done to confirm the soundness of the both knee joint in dogs and not detectable lesions were diagnosed. The dogs were intravenously injected with a 10 mci/kg of 99mTechnetium-methylene diphosphonate (99mTc-MDP) under general anesthesia. Scintigraphs were obtained using a large field of view gamma camera equipped a parallel-hole, low-energy about 3 hours after intravenous injection of 99mTc-MDP. Before CrCL transection and 4, 8, and 12 weeks after the procedures, scintigraphy were conducted. Bone uptake of the left stifle joint increased after the procedures in all dogs. When the bone uptake from the TPLO procedure was compared with that of the control, there was a significant difference (p < 0.05). At 12 weeks after the TPLO procedure, the dogs showed normal anatomical posture and gait. It is concluded that TPLO procedure was effective in reconstruct of the stifle joint in dogs with CrCL rupture.

• 청정기술
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• 제26권2호
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• pp.122-130
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• 2020

입상 활성탄에 대한 reactive blue 4 (RB 4) 의 등온흡착과 동력학적, 열역학적 파라미터에 대해 활성탄의 양, pH, 초기농도, 접촉시간, 온도를 흡착변수로 하여 조사하였다. 활성탄에 의한 RB 4 염료의 흡착은 pH 7을 기점으로 양쪽으로 흡착 백분율이 증가하는 concave 모양을 나타내었다. 등온흡착자료는 Langmuir, Freundlich, Temkin 등온흡착식에 적용하였다. Freundlich과 Langmuir 등온흡착식이 모두 잘 맞았다. 계산된 Freundlich 분리계수(1/n = 0.125 ~ 0.232)과 Langmuir 분리계수(R_L = 1.53 ~ 1.59) 으로부터 활성탄이 RB 4를 효과적으로 처리할 수 있다는 것을 알 수 있었다. Temkin의 흡착열관련상수(B_T = 17.611 ~ 29.010 J mol^-1)는 이 공정이 물리흡착임을 나타냈다. 동력학적 실험으로부터 흡착공정은 유사 이차 반응속도식에 잘 맞았다. 입자 내 확산식에 대한 결과는 표면확산을 나타내는 두 번째 직선의 기울기보다 입자내 세공확산을 나타내는 첫 번째 직선의 기울기가 작게 나타나서 입자내 세공확산이 속도지배단계인 것을 확인하였다. Gibbs 자유에너지 변화(ΔG = -3.262 ~ -7.581 kJ mol^-1)와 엔탈피 변화(ΔH = 61.08 kJ mol^-1)은 각각 흡착공정이 자발적 공정 및 흡열과정임을 나타내었다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2012년도 춘계학술발표대회
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• pp.65-65
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• 2012

Copper zinc tin sulfide ($Cu_2ZnSnS_4$, CZTS) is a very promising material as a low cost absorber alternative to other chalcopyrite-type semiconductors based on Ga or In because of the abundant and economical elements. In addition, CZTS has a band-gap energy of 1.4~1.5eV and large absorption coefficient over ${\sim}10^4cm^{-1}$, which is similar to those of $Cu(In,Ga)Se_2$(CIGS) regarded as one of the most successful absorber materials for high efficient solar cell. Most previous works on the fabrication of CZTS thin films were based on the vacuum deposition such as thermal evaporation and RF magnetron sputtering. Although the vacuum deposition has been widely adopted, it is quite expensive and complicated. In this regard, the solution processes such as sol-gel method, nanocrystal dispersion and hybrid slurry method have been developed for easy and cost-effective fabrication of CZTS film. Among these methods, the hybrid slurry method is favorable to make high crystalline and dense absorber layer. However, this method has the demerit using the toxic and explosive hydrazine solvent, which has severe limitation for common use. With these considerations, it is highly desirable to develop a robust, easily scalable and relatively safe solution-based process for the fabrication of a high quality CZTS absorber layer. Here, we demonstrate the fabrication of a high quality CZTS absorber layer with a thickness of 1.5~2.0 ${\mu}m$ and micrometer-scaled grains using two different non-vacuum approaches. The first solution-processing approach includes air-stable non-toxic solvent-based inks in which the commercially available precursor nanoparticles are dispersed in ethanol. Our readily achievable air-stable precursor ink, without the involvement of complex particle synthesis, high toxic solvents, or organic additives, facilitates a convenient method to fabricate a high quality CZTS absorber layer with uniform surface composition and across the film depth when annealed at $530^{\circ}C$. The conversion efficiency and fill factor for the non-toxic ink based solar cells are 5.14% and 52.8%, respectively. The other method is based on the nanocrystal dispersions that are a key ingredient in the deposition of thermally annealed absorber layers. We report a facile synthetic method to produce phase-pure CZTS nanocrystals capped with less toxic and more easily removable ligands. The resulting CZTS nanoparticle dispersion enables us to fabricate uniform, crack-free absorber layer onto Mo-coated soda-lime glass at $500^{\circ}C$, which exhibits a robust and reproducible photovoltaic response. Our simple and less-toxic approach for the fabrication of CZTS layer, reported here, will be the first step in realizing the low-cost solution-processed CZTS solar cell with high efficiency.

• 한국재료학회지
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• 제30권8호
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• pp.383-392
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• 2020

In this paper, AgCl/Ag₃PO₄/diatomite photocatalyst is successfully synthesized by microemulsion method and anion in situ substitution method. X-ray diffraction (XRD), photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS), transmission electron microscopy (TEM), and ultraviolet-visible spectroscopy (UV-Vis) are used to study the structural and physicochemical characteristics of the AgCl/Ag₃PO₄/diatomite composite. Using rhodamine B (RhB) as a simulated pollutant, the photocatalytic activity and stability of the AgCl/Ag₃PO₄/diatomite composite under visible light are evaluated. In the AgCl/Ag₃PO₄/diatomite visible light system, RhB is nearly 100 % degraded within 15 minutes. And, after five cycles of operation, the photocatalytic activity of AgCl/Ag₃PO₄/diatomite remains at 95 % of the original level, much higher than that of pure Ag₃PO₄ (40 %). In addition, the mechanism of enhanced catalytic performance is discussed. The high photocatalytic performance of AgCl/Ag₃PO₄/diatomite composites can be attributed to the synergistic effect of Ag₃PO₄, diatomite and AgCl nanoparticles. Free radical trapping experiments are used to show that holes and oxygen are the main active species. This material can quickly react with dye molecules adsorbed on the surface of diatomite to degrade RhB dye to CO₂ and H₂O. Even more remarkably, AgCl/Ag₃PO₄/diatomite can maintain above 95 % photo-degradation activity after five cycles.

• 한국자기학회지
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• 제17권4호
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• pp.166-171
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• 2007

단결정 Bi단일 나노선의 정상 자기 저항(ordinary magnetoresistance) 특성을 $2{\sim}300K$에서 4 단자법으로 측정하였다. I-V 측정을 통해 전기적 오믹 형성을 확인하였고, 2 K과 300 K에서 비저항이 각각 $1.0{\times}10^{-4}$와 $8.2{\times}10^{-5}{\Omega}{\cdot}cm$으로 측정되었다. 수직(transverse) 및 수평(longitudinal) 자기저항비(MR ratio)가 110 K와 2 K에서 각각 현재까지 보고된 MR 중 가장 큰 2496%와 -38%으로 관찰되었으며, 이 결과는 자발 성장법으로 성장된 Bi 나노선의 결정성이 매우 우수한 단결정임을 증명한다. simple two band(STB) 모델을 통해 Bi 나노선의 수직 및 수평 정상 자기 저항(OMR) 거동이 온도에 따른 페르미 준위(Fermi level)와 밴드 겹침(band overlap)등의 전자 구조 변화 및 운반자 농도 변화로 잘 설명된다.

• 한국초지조사료학회지
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• 제41권3호
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• pp.183-188
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• 2021

The increase in temperature due to climate warming is predicted to affect crop yields in the future. Until now, various types of OTC (open top chamber) that simulate the future climate condition have been developed and used to study the effect of temperature increase due to global warming on maize growth. However, in most OTCs, high equipment and maintenance costs were required to artificially increase the temperature. This study was carried to develop a cost-effective and simple OTC suitable for climate warming experiments for forage maize. Three octagonal OTCs with a height of 3.5 m × a diameter of 4.08 m and a partially covered top were constructed. The lower part of OTC covered film was opened at a height of 26 cm (OTC-26), 12 cm (OTC-12) from the ground surface, or not opened (0 cm, OTC-0). Mean air temperatures during the daytime on a sunny day in OTC-0, OTC-12 and OTC-26 increased to 3.23℃, 1.33℃, and 0.89℃, respectively, compared to the ambient control plot. For a pilot test, forage maize, 'Gwangpyeongok' was grown at OTCs and ambient control plots. As a result, in the late maize vegetative growth phase (July 30), the plant height was increased more than 45% higher than the ambient control plot in all OTC plots, and the stem diameter also increased in all OTC plots. These results indicate that it is possible to set the temperature inside the OTC by adjusting the opening height of the lower end of the OTC, and it can be applied to study the response of forage maize to elevated temperature. An OTC, with its advantages of energy free, low maintenance cost, and simple temperature setting, will be helpful in studying maize growth responsiveness to climate warming in the future.

• 청정기술
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• 제27권2호
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• pp.182-189
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• 2021

입상 활성탄(GAC)에 의한 disperse yellow 3(DY 3) 염료의 흡착을 초기농도, 접촉 시간, 온도 및 pH를 흡착변수로 하는 실험을 통해 등온흡착과 동력학적, 열역학적 파라미터에 대해 조사하였다. pH 변화실험에서 활성탄에 대한 DY 3의 흡착은 산성영역인 pH 3에서 흡착률이 가장 높았다. 이는 양(+)으로 하전된 활성탄 표면과 DY 3의 음이온(OH^-) 사이의 정전기적 인력에 기인한 것으로 판단되었다. DY 3의 흡착평형자료로부터 Langmuir 등온흡착식에 가장 잘 맞았으며, 계산된 분리계수(R_L) 값으로부터 활성탄이 DY 3을 효과적으로 제거할 수 있다는 것을 알았다. 또한, Temkin 식의 흡착열 관련 상수의 값이 20 J mol^-1을 넘지 않아 물리 흡착 공정임을 알 수 있었다. 동력학 실험은 농도별 실험과 온도별 실험 모두 유사 이차 속도식이 오차율 10.72% 이내였다. Weber와 Morris의 입자내 확산 모델의 플로트는 두 단계의 직선으로 나타났다. Stage 2(입자내 확산)의 기울기가 stage 1(경계층 확산)의 기울기보다 작게 나타나 입자 내 확산이 속도지배단계인 것을 확인하였다. 활성탄에 의한 DY 3 흡착의 자유에너지 변화는 298 ~ 318 K에서 모두 음의 값을 나타냈으며, 온도가 증가할수록 자발성이 더 높아졌다. 활성탄에 대한 DY 3의 흡착반응의 엔탈피 변화는 0.65 kJ mol^-1 로 흡열반응이었으며, 엔트로피 변화는 2.14 J mol^-1 K^-1로 양의 값(positive value)을 나타냈다.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1996년도 The 9th KACG Technical Annual Meeting and the 3rd Korea-Japan EMGS (Electronic Materials Growth Symposium)
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• pp.75-87
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• 1996

This review is presented under the following headings: 1.Introduction 1.1 Brief review of the properties of AlN 1.2 Historical survey of work on ceramic and single crystal AlN 2.Thermochemical background 3.Crystal growth 4.Doping 5.Potential applications and future work The known properties of AlN which make it of interest for various are discussed briefly. The properties include chemical stability, crystal structure and lattice constants, refractive indices and other optical properties, dielectric constant, surface acoustic wave velocity and thermal conductivity. The history of work in single crystals, thin films and ceramics are outlined and the thermochemistry of AlN reviewed together with some of the relevant properties of aluminium and nitrogen; the problems encountered in growing crystals of AlN are shown to arise directly from these thermochemical relationships. Methods have been reported in the literature for growing AlN crystals from melts, solution and vapour and these methods are compared critically. It is proposed that the only practicable approach to the growth of AlN is by vapour phase methods. All vapour based procedures share the share the same problems: $.$the difficulty of preventing contamination by oxygen & carbon $.$the high bond energy of molecular nitrogen $.$the refractory nature of AlN (melting point~3073K at 100ats.) $.$the high reactivity of Al at high temperatures It is shown that the growth of epitactic layers and polycrystalline layers present additional problems: $.$chemical incompatibility of substrates $.$crystallographic mismatch of substrates $.$thermal mismatch of substrates The result of all these problems is that there is no good substrate material for the growth of AlN layers. Organometallic precursors which contain an Al-N bond have been used recently to deposit AlN layers but organometallic precursors gave the disadvantage of giving significant carbon contamination. Organometallic precursors which contain an Al-N bound have been used recently to deposit AlN layers but organometallic precursors have the disadvantage of giving significant carbon contamination. It is conclude that progress in the application of AlN to optical and electronic devices will be made only if considerable effort is devoted to the growth of larges, pure (and particularly, oxygen-free) crystals. Progress in applications of epi-layers and ceramic AlN would almost certainly be assisted also by the availability of more reliable data on the pure material. The essential features of any stategy for the growth of AlN from the vapour are outlined and discussed.