• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.391-394
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• 2002

Transparent conductive oxides (TCO) are necessary as front electrode for most thin film solar cell. In our paper, transparent conducting aluminum-doped Zinc oxide films (ZnO:Al) were prepared by rf magnetron sputtering on glass (Corning 1737) substrate as a variation of the deposition condition. After deposition, the smooth ZnO:Al films were etched in diluted HCl (0.5%) to examine the electrical and surface morphology Properties as a variation of the time. The most important deposition condition of surface-textured ZnO films by chemical etching is the processing pressure and the substrate temperature. In low pressures (0.9 mTorr) and high substrate temperatures ($\leq$30$0^{\circ}C$), the surface morphology of films exhibits a more dense and compact film structure with effective light-trapping to apply the silicon thin film solar cells.

• 한국표면공학회지
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• 제55권1호
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• pp.9-17
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• 2022

This work is concerned with the formation behavior of PEO (Plasma Electrolytic Oxidation) films on Al6082 alloy under the application of direct current (DC) and alternating current (AC) in an alkaline solution. Arc initiation voltage became much lower by the application of AC than DC, and arc initiation time became shorter under DC than AC. The number of pores present in the PEO films was much larger than that on the surface, irrespective of DC and AC. It was also found that the number of pores in the PEO films formed under AC was more than that under DC and the size of pores is smaller under AC than DC. During the formation of PEO films, a lot of heat was generated and solution temperature increased more rapidly under DC than under AC which is attributed to high PEO film formation voltage under DC than AC.

• 한국표면공학회지
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• 제53권1호
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• pp.15-21
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• 2020

In this study, growth and burning behavior of 6061 aluminum alloy was studied under constant anodic voltages at various temperatures and magnetic stirring rates in 20% sulfuric acid solution by analysing I-t curves, measuring thickness and hardness of aluminum anodic oxide (AAO) films, observations of surface and cross-sectional images of AAO films. AAO films were grown continuously at lower voltages than 18.5V but burning occurred when a voltage more than 19V was applied in 20% H₂SO₄ solution at 20±0.5℃ and 200 rpm of magnetic stirring. The burning was always related with an extremely large increase of anodic current density with anodizing time, suggesting that high heat generation during anodizing causes deteriorations of AAO films by chemical reaction with acidic solutions. The burning resulted in decreases of film thickness and hardness, surface color brightened and formation of porous defects in the AAO films. The burning voltage was found to decrease with increasing solution temperature and decreasing magnetic stirring rate. The decreased burning voltages seem to be closely related with increased chemical reactions between AAO films and hydrogen ions.

• 한국표면공학회지
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• 제53권6호
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• pp.351-359
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• 2020

Formation behavior and properties of PEO (Plasma Electrolytic Oxidation) film on AA2024 were investigated under application of pulsed current as a function of Na3PO4 concentration in 0.05 M Na2SiO3 solution by analyzing voltage-time behavior, in-situ observation of arc generation, observation of surface morphology and measurements of thickness and surface roughness. Arc generation voltage decreased with increasing Na3PO4 concentration. Color difference of PEO films between edge and inner part disappeared by addition of Na3PO4. It was also observed that size of nodules on PEO film decreased with increasing Na3PO4 concentration. Thickness of PEO films formed on AA2024 increased with increasing Na3PO4 concentration. Whereas, surface roughness of PEO films decreased with increasing Na3PO4 concentration up to 0.05 M of Na3PO4 which is attributed to the deceased size of nodules on the PEO films. However, the surface roughness increased with increasing Na3PO4 concentration more than 0.07 M of Na3PO4 which seems to be due to the formation of non-uniform PEO films with smooth surface and large size pores formed by orange-colored big arcs. The experimental results suggest that added sodium phosphate less than 0.2 M in an alkaline silicate solution can contribute to the formation of relatively thick and uniform thickness of PEO films under arc generation voltage lower than 300 V.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2001년도 춘계학술발표회 초록집
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• pp.72-72
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• 2001

Plasma polymerized thin films have been deposited on Si(lOO) substrates at $25-400^{\circ}C$ using thiophene ($C_4H_4S$) precursor by plasma assisted chemical vapor deposition (PACVD) method for low-dielectric device application. In order to compare physical properties of the as-grown thin films, the effects of the plasma power, gas flow ratio and deposition temperature on the dielectric constant and thermal stability were mainly studied. XRD and TED studies revealed that the as-grown thin films have highly oriented amorphous polymer structure. XPS data showed that the polymerized thin films that grown under different RF power and deposition temperature as well as different gas ratio of $Ar:H_2$ have different stoichiometric ratio of C and S compared with that of monomer, indicating a formation of mixture polymers. Moreover, we also realized that oxygen free and thermally stable polymer thin films could be grown at even $400^{\circ}C$. The results of SEM, AFM and TEM showed that the polymer films with smooth surface and sharp interface could be grown under various deposition conditions. From the electrical property measurements such as I-V and C-V characteristics, the minimum dielectric constant and the best leakage current were obtained to be about 3.22 and $10-11{\;}A/\textrm{cm}^2$, respectively.

• 한국전기전자재료학회논문지
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• 제29권7호
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• pp.440-444
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• 2016

Titanium oxide ($TiO_2$) thin films were synthesized on polymer insulator and Si substrates by atomic layer deposition (ALD) method. The surface and electrical properties of $TiO_2$ films synthesized at various ALD cycle numbers were investigated. The synthesized $TiO_2$ films exhibited higher contact angle and smooth surface. The contact angle of $TiO_2$ films was increased with the increase of ALD-cycle number. Also, the rms surface roughness of films was slightly rough with the increase of ALD-cycle number. The leakage current on $TiO_2$ film surface synthesized at various conditions were uniformed, and the values were decreased with the increase of ALD-cycle number. In the results, the performance of $TiO_2$ films for self-cleaning critically depended on a number of ALD-cycle.

• 한국표면공학회지
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• 제29권5호
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• pp.570-576
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• 1996

Cu films for future ULSI metallization were prepared by partially ionized beam (PIB) deposition and characterized in terms of preferred orientation, grain size, roughness and resistivity. PIB-Cu films were prepared on Si (100) at pressure of $8 \times 10^{-7}$~$1 \times 10^{-6}$ Torr. Effects of acceleration voltage and ionization potential on the properties of PIB-Cu films have been investigated. As the acceleration voltage increased at constant ionization potential of 400 V, the degree of preferred orientation and surface smoothness of the Cu film increased. At the ionization potential of 450 V, the degree of preferred orientation at the acceleration voltage higher than 2 kV decreased and surface roughness increased with acceleration voltage. Grain size of Cu films increased to 1100 $\AA$ initially up to applied acceleration voltage of 1 kV, above which a little increase occurred with the acceleration voltage. There was no indication of impurities such as C, O in all sample. Resistivity of Cu film had the same trends as the surface roughness with acceleration voltage and ionization potential. The increase of electrical resistivity of PIB-Cu films was explained in terms of grain size and surface roughness

• 한국전기전자재료학회논문지
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• 제26권3호
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• pp.194-197
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• 2013

We investigated the effect of etching time on the surface roughness, and electrical and optical properties of ZnO and 2 wt% Al-doped ZnO (AZO) films. The ZnO and AZO films were deposited on glass substrates by RF magnetron sputtering technique. The etching experiment was carried out using a solution of 5% HCl at room temperature. The surface roughness was characterized by Atomic Force Microscopy. The electrical property was measured by Hall measurement system and 4-point probe. The optical property was characterized by UV-vis spectroscopy. After the wet chemical etching, the surface textures were obtained on the surface of the ZnO and AZO films. With the increase of etching time, the surface roughness (RMS) of the films increased and the transmittance of the films was observed to decrease. For the AZO film, a low resistivity of $1.0{\times}10^{-3}\;{\Omega}{\cdot}cm$ was achieved even after the etching.

• 한국전기전자재료학회논문지
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• 제28권2호
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• pp.104-108
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• 2015

Al thin films were deposited on TiN/Si(100) via metal-organic chemical vapor deposition using N-methylpyrrolidine alane as a precursor. Characterization of the deposited films were investigated with SEM, XRD, ${\alpha}$-step, AFM, 4-point probe. The early stage of Al thin film deposition was analyzed by in-situ surface reflectance measurement with laser and photometer apparatus. The surface reflectance were changed greatly during the initial 30~40 seconds. There were two increases and two decreases in the surface reflectance, thus the sequence of Al films were deposited at 8 significant points of the surface reflectance change. Surface topograph and cross-sectional view of each film were analyzed with SEM. Al films were grown in the complex mechanism of Volmer-Weber and Stranski-Krastanov process.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.94-94
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• 2013

The Cr-Zr-N films have much improved mechanical properties and very smooth surface roughness. However, in spite of their outstanding properties, the Cr-Zr-N coatings revealed their mechanical properties deteriorated severely with increasing Zr content at $500^{\circ}C$ ecause of very rapid oxidation. Recently oxynitride films have been widely studied due to their excellent unique mechanical properties and oxidation resistance. In this work, CrZr-O-N films with various O contents were synthesized by unbalanced magnetron sputtering with Cr-Zr segment targets (Cr:Zr volume ratios is 1：1) and all films were prepared in a nitrogen rich mixture of N2 and O2. Characteristics such as crystalline structure, hardness and chemical composition as a function of the O content were investigated by X-ray diffraction (XRD), field emission scanning electron microscope (FE-SEM), microhardness testing system and energy dispersive spectroscopy (EDS). Results showed that the thin films had dense and compact microstructure as O content in the films increases. The microstructure of the thin films consisted of mainly crystalline Cr (Zr)N phase and Cr2O3 phase. The maximum hardness and elastic modulus of the films was measured to be approximately 33.2 GPa and 280.6 GPa from the films with low content of O elements. Detailed experimental results will be presented.