• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05b
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• pp.84-87
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• 2001

In this study, $CeO_2$ thin films were etched with a $CF_4/Ar$ gas combination in inductively coupled plasma (ICP), The maximum etch rate of $CeO_2$ thin films is $270{\AA}/min$under $CF_4/(CF_4+Ar)$ of 0.2, 600 W/-200 V, 15 mTorr, and $25^{\circ}C$. The selectivities of $CeO_2$ to PR and SBT are 0.21, 0.25. respectively. The surface reaction of the etched $CeO_2$ thin films was investigated with x-ray photoelectron spectroscopy (XPS). There is a chemical reaction between Ce and F, Compounds such as $Ce-F_x$ are remains on the surface of $CeO_2$ thin films. Those products can be removed by Ar ion bombardment effect, The results of secondary ion mass spectrometer (SIMS) were equal to these of XPS. Scanning electron microscopy (SEM) was used to examine etched profiles of $Ce-F_x$ thin films. The etch profile of over-etched $CeO_2$ films with the $0.5 {\mu}m$ line was approximately $65^{\circ}$.

• JSTS:Journal of Semiconductor Technology and Science
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• v.5 no.2
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• pp.113-119
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• 2005

4H-SiC planar MESFETs were fabricated using ion-implantation on semi-insulating substrate without recess gate etching. A modified RCA method was used to clean the substrate before each procedure. A thin, thermal oxide layer was grown to passivate the surface and then a thick field oxide was deposited by CVD. The fabricated MESFET showed good contact properties and DC/RF performances. The maximum oscillation frequency of 34 GHz and the cut-off frequency of 9.3 GHz were obtained. The power gain was 10.1 dB and the output power of 1.4 W was obtained for 1 mm-gate length device at 2 GHz. The fabricated MESFETs showed the charge trapping-free characteristics and were characterized by the extracted small-signal equivalent circuit parameters.

• KSTLE International Journal
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• v.10 no.1_2
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• pp.1-5
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• 2009

This paper reports an investigation on nanotribological properties of silicon nanochannels coated by a diamond-like carbon (DLC) film. The nanochannels were fabricated on Si (100) wafers by using photolithography and reactive ion etching (RIE) techniques. The channeled surfaces (Si channels) were then further modified by coating thin DLC film. Water contact angle of the modified and unmodified Si surfaces was examined by an anglemeter using the sessile-drop method. Nanotribological properties, namely friction and adhesion forces, of the Si channels coated with DLC (DLC-coated Si channels) were investigated in comparison with those of the flat Si, DLC-coated flat Si (flat DLC), and Si channels, using an atomic force microscope (AFM). Results showed that the DLC-coated Si channels greatly increased hydrophobicity of silicon surfaces. The DLC coating and Si channels themselves individually reduced adhesion and friction forces of the flat Si. Further, the DLC-coated Si channels exhibited the lowest values of these forces, owing to the combined effect of reduced contact area through the channeling and low surface energy of the DLC. This combined modification could prove a promising method for tribological applications at small scales.

• Transactions of Materials Processing
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• v.16 no.1 s.91
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• pp.48-53
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• 2007

LCD-BLU(Liquid Crystal Display - Back Light Unit) consists of several optical sheets: LGP(Light Guiding Plate), light source and mold frame. The LGP of LCD-BLU is usually manufactured by etching process and forming numerous dots with $50{\mu}m$ in diameter on the surface. But the surface roughness of LGP with etched dots is very high, so there is much loss of light. In order to overcome the limit of current etched dot patterned LGP, optical pattern design with microlens of $50{\mu}m$ diameter was applied in the present study. The microlens pattern fabricated by modified LiGA with thermal reflow process was applied to the optical design of LGP and optical simulation was carried out to know tendency of microlens patterned LGP simultaneously. The attention was paid to the effects of different aspect ratio(i.e. $0.2\sim0.5$) of optical pattern conditions to the brightness distribution of BLU with microlens patterned LGP. Finally, high aspect ratio microlens patterned LGP showed superior results to the one made by low aspect ratio in average luminance.

• Korean Journal of Materials Research
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• v.9 no.2
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• pp.144-148
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• 1999

We have studied the deposition characteristics of thick silicon dioxide film on Si substrate by $O_3$/TEOS APCVD(Atmospheric Pressure Chemical Vapor Deposition). The effect of deposition parameters such as the distance between showerhead and substrate, deposition temperature, TEOS flow rate and $O_3$/TEOS ratio on deposition rate, surface morphology, and properties of films as investigated. As deposition temperature increased, deposition rate decreased but the surface morphology and adhesion of film to substrate improved. As the distance between showerhead and substrate decreased, the deposition rate increased. Etching rate using the BOE increased as TEOS flow rate increased, but was independent of$ O_3$/TEOS ratio. Deposition rate of $5\mu\textrm{m}$/hour was obtained under the condition that the distance between showerhead and substrate was 5mm and the deposition temperature was $370^{\circ}C$.

• Journal of the Korean Ceramic Society
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• v.36 no.1
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• pp.55-60
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• 1999

${\beta}$-SiC thin film was deposited on a Si substrate without buffer layer using a single precursor of Hexamethyldisilane (Si2(CH3)6) by chemical vapor deposition method. HCI gas was introduced into hexamethyldisilane /H2 gas mixture, and the feeding schedule of HCI and precursor gases was modified in order to enhance the selectivity of SiC deposition between a Si substrate and a SiO2 mask. The effect of HCI gas on the surface roughness of the SiC film was investigated and typical electrical properties of the SiC film were also investigated by Hall measurement.

• Carbon letters
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• v.3 no.3
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• pp.127-132
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• 2002

Unidirectional polymer composites were prepared using high-strength carbon fibers as reinforcement and phenolic resin as matrix precursor with keeping fiber volume fraction at 30, 40, 50 and 60% respectively. These composites were carbonized at $1000^{\circ}C$ and graphitised at $2600^{\circ}C$ in the inert atmosphere. The carbonized and graphitised composites were characterized for mechanical properties as well as microstructure. Microscopic studies were carried out of the polished surface of carbonized and graphitised composites after etching by chromic acid, to understand the effect of fiber volume fraction on oxidation at fiber-matrix interface. It is found that the flexural strength in polymer composites increases with fiber volume fraction and so does for the carbonised composites. However, the trend was found to be reversed in graphitised composites. In all the carbonized composites anisotropic region has been observed at fiber-matrix interface which transforms into columnar type microstructure upon graphitisation. The extension of strong and weak columnar type microstructure is function of fiber volume fraction. SEM microscopy of the etched surface of the sample reveal that composites containing 40% fiber volume has minimum oxidation at the interface, revealing a strong interfacial bonding.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.454-454
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• 2010

In order to achieve a high efficient a-Si solar cell, the TCO (transparent conductive oxide) substrates are required to be a low sheet resistivity, a high transparency, and a textured surface with light trapping effect. Recently, a zinc oxide (ZnO) thin film attracts our attention as new coating material having a good transparent and conductive for TCO of solar cells. In this paper the optical properties of $H_2$ post-treated BZO (boron doped ZnO, ZnO:B) thin film are investigated with $O_2$-plasma treatment. The BZO thin films by MOCVD (Metal Organic Chemical Vapor Deposition) are investigated and the samples of $H_2$ post-treated BZO thin film are tested with $O_2$-plasma treatment by plasma treatment system with 13.56 MHz as RIE (Reactive Ion Etching) type. We measured the optical properties and surface morphology of BZO thin film with and without $O_2$-plasma treatment. The optical properties such as transmittance, reflectance and haze are measured with integrating sphere and ellipsometer. This result of the BZO thin film with and without $O_2$-plasma treatment is application to the TCO for solar cells.

• Transactions of the Korean hydrogen and new energy society
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• v.13 no.1
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• pp.34-41
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• 2002

CdS and $TiO_2$ nanoparticles were made by the precipitation method and sol-gel method, respectively, and they were mixed mechanically and then treated with the hydrothermal processing. CdS-$TiO_2$ composite particulate films were thus prepared by casting CdS-$TiO_2$ mixed sol onto $SnO_2$ conducting glass and a subsequent heat-treatment at $400^{\circ}C$. Again, the physico-chemical and photoelectrochemical properties of these films were controlled by the surface treatment with $TiCl_4$ aqueous solution. The photocurrents and the hydrogen production rates measured under the present experimental conditions varied in the range of $3.5{\sim}4.5mA/cm^2$ and $0.3{\sim}1.8cc/cm^2$-hr, respectively, and showed the maximum values at the $CdS/[CdS+TiO_2]$ mole ratio of 0.2. Also, the surface treatment with $TiCl_4$ aqueous solution caused a considerable improvement in the photocatalytic activity, Probably as a result of close contacts between the primary particles by the etching effect of $TiCl_4$ It was found that the photoelectrochemical performance of these particulate films could be effectively enhanced by this approach.

• Journal of the Korean institute of surface engineering
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• v.46 no.1
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• pp.29-35
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• 2013

The effect of DC bias on the growth of nanocrystalline diamond films on silicon substrate by microwave plasma chemical vapor deposition has been studied varying the substrate temperature (400, 500, 600, and $700^{\circ}C$), deposition time (0.5, 1, and 2h), and bias voltage (-50, -100, -150, and -200 V) at the microwave power of 1.2 kW, working pressure of 110 torr, and gas ratio of Ar/1%$CH_4$. In the case of low negative bias voltages (-50 and -100 V), the diamond particles were observed to grow to thin film slower than the case without bias. Applying the moderate DC bias is believed to induce the bombardment of energetic carbon and argon ions on the substrate to result in etching the surfaces of growing diamond particles or film. In the case of higher negative voltages (-150 and -200 V), the growth rate of diamond film increased with the increasing DC bias. Applying the higher DC bias increased the number of nucleation sites, and, subsequently, enhanced the film growth rate. Under the -150 V bias, the height (h) of diamond films exhibited an $h=k{\sqrt{t}}$ relationship with deposition time (t), where the growth rate constant (k) showed an Arrhenius relationship with the activation energy of 7.19 kcal/mol. The rate determining step is believed to be the surface diffusion of activated carbon species, but the more subtle theoretical treatment is required for the more precise interpretation.