• 한국전기전자재료학회논문지
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• 제16권8호
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• pp.744-751
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• 2003

Co-Pd alloy thin films prepared by a DC-sputter that have self-organized nano structure(SONS), are promising for high-density information storage media in information era. We prepared the samples by varying Pd contents of 0~8.1 wt% at the substrate temperatures of room temperature (RT) and 200 $^{\circ}C$, respectively Microstructure and Pd contents of the Co$_{1-x}$ Pd$_{x}$ films are probed by a scanning electron microscope (SEM), a transmission electron microscope (TEM) and an energy dispersive spectrometer (EDS). We also investigated the saturation magnetization (Ms), remanence and coercivity of the Co$_{1-x}$ Pd$_{x}$ films. Surface roughness are measured by an atomic force microscope (AFM). We revealed that self-organized nano size Co-enriched phase and Pd-enriched phase existed with Pd contents at the substrate temperatures of RT and 20$0^{\circ}C$ through microstructure characterization. SONS helped to keep the saturation magnetization and enhance the perpendicular anisotropy with Pd contents. Out result implies that we may tune the perpendicular magnetic properties with keeping the saturation magnetization by varying substrate temperatures and Pd contents for high density magnetic recording.rding.

• 자원환경지질
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• 제28권3호
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• pp.199-211
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• 1995

The deep sea camera system could render it possible to obtain the detailed information of the nodule distribution, but difficult to estimate nodule abundance quantitatively. In order to estimate nodule abundance quantitatively from deep seabed photographs, the nodule abundance equation was derived from the box core data obtained in KODOS area(long.: $154^{\circ}{\sim}151^{\circ}W$, lat.: $9^{\circ}{\sim}12^{\circ}N$) during two survey cruises carried out in 1989 and 1990. The regression equation derived by considering extent of burial of nodule to Handa's equation compensates for the abundance error attributable to partial burial of some nodules by sediments. An average long axis and average extent of burial of nodules in photographed area are determined according to the surface textures of nodules, and nodule coverage is calculated by the image analysis method. Average nodule abundance estimated from seabed photographs by using the equation is approximately 92% of the actual average abundance in KODOS area. The measured sampling points by box core or free fall grab are in general very sparse and hence nodule abundance distribution should be interpolated and extrapolated from measured data to uncharacterized areas. The another goal of this study is to depict continuous distribution of nodule abundance in KODOS area by using PC-version of geostatistical model in which several stages are systematically proceeded. Geostatistics was used to analyse spatial structure and distribution of regionalized variable(nodule abundance) within sets of real data. In order to investigate the spatial structure of nodule abundance in KODOS area, experimental variograms were calculated and fitted to a spherical models in isotropy and anisotropy, respectively. The spherical structure models were used to map out distribution of the nodule abundance for isotropic and anisotropic models by using the kriging method. The result from anisotropic model is much more reliable than one of isotropic model. Distribution map of nodule abundance produced by PC-version of geostatistical model indicates that approximately 40% of KODOS area is considered to be promising area(nodule abundance > $5kg/m^2$) for mining in case of anisotropy.

• 한국자기학회지
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• 제14권2호
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• pp.59-64
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• 2004

나노 결정립 구조를 갖는 Fe-Al-O 연자성 산화막을 이온빔 에칭법으로 에칭하면서 연자기적 특성의 변화를 조사하였다. 두께가 감소할수록 보자력과 각형비가 증가하고 AFM 으로 조사한 표면굴곡도 증가하는 것으로 보아 결정립의 크기가 증가하는 것으로 판단된다. 이러한 현상은 비정질을 열처리한 나노결정립 연자성 재료와 다르게 성막하는 과정의 온도 상승에 의한 결정성장이 원인으로 판단된다. 따라서 우수한 연자성 박막을 제조하기 위해서는 두께 및 성막시간 등 최적 제조조건을 찾아야 한다. 마그네트론 스퍼터링법으로 제조된 Fe-Al-O 산화막의 경우 900 nm 이상에서 보자력이 1 Oe 이하인 연자성 박막을 얻을 수 있었다.

• 한국자기학회지
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• 제3권4호
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• pp.298-304
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• 1993

Pd/Co 다층박막을 동시열증착장치로 제작하여, 토오크 자력계, 홀 효과 측정장치 및 X-선 회절기를 이용하여 기판 온도, Pd하지층에 따른 구조적 자기적 및 열적 특성변화를 연구하였다. 기판 온도가 증가함에 따라 $150^{\circ}C$까지는 계면구조 및 각 층의 결정성이 향상되고, (111) 집합조직이 발달되었으며 따라서 계면자기이방성 및 수직자기 이방성에너지는 증가하였다. 그러나 보자력은 감소 하였는데 이는 입자의 성장으로 인한 자구벽 고착효과 감소에 기인된 것으로 보이며 Pd하지층이 두꺼 울 수록 다층박막의 입자크기는 컸다. $200^{\circ}C$ 이상에서는 계면에서 상호확산에 의하여 다층막의 구조의 열화는 촉진되었다. 열처리 초기에 주 피이크 강도의 변화는 컸으며 그 후부터는 작은 폭으로 감소하였다. 초기의 큰 강도 변화는 구조이완등의 현상에 기인된 것으로 추측되며 그 후는 확산에 의 해서이다. 다층박막의 상호확산에 필요한 활성화 에너지는 14.9 KCal/mole.K 였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.220-220
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• 2013

Surface-normal transmission electro-absorption modulator (EAM) are attractive for high-definition (HD) three-dimensional (3D) imaging application due to its features such as small system volume and simple epitaxial structure [1,2]. However, EAM in order to be used for HD 3D imaging system requires uniform modulation performance over large area. To achieve highly uniform modulation performance of EAM at the operating wavelength of 850 nm, it is extremely important to remove the GaAs substrate over large area since GaAs material has high absorption coefficient below 870 nm which corresponds to band-edge energy of GaAs (1.424 eV). In this study, we propose and experimentally demonstrate a transmission EAM in which highly selective backside etching methods which include lapping, dry etching and wet etching is carried out to remove the GaAs substrate for achieving highly uniform modulation performance. First, lapping process on GaAs substrate was carried out for different lapping speeds (5 rpm, 7 rpm, 10 rpm) and the thickness was measured over different areas of surface. For a lapping speed of 5 rpm, a highly uniform surface over a large area ($2{\times}1\;mm^2$) was obtained. Second, optimization of inductive coupled plasma-reactive ion etching (ICP-RIE) was carried out to achieve anisotropy and high etch rate. The dry etching carried out using a gas mixture of SiCl4 and Ar, each having a flow rate of 10 sccm and 40 sccm, respectively with an RF power of 50 W, ICP power of 400 W and chamber pressure of 2 mTorr was the optimum etching condition. Last, the rest of GaAs substrate was successfully removed by highly selective backside wet etching with pH adjusted solution of citric acid and hydrogen peroxide. Citric acid/hydrogen peroxide etching solution having a volume ratio of 5:1 was the best etching condition which provides not only high selectivity of 235:1 between GaAs and AlAs but also good etching profile [3]. The fabricated transmission EAM array have an amplitude modulation of more than 50% at the bias voltage of -9 V and maintains high uniformity of >90% over large area ($2{\times}1\;mm^2$). These results show that the fabricated transmission EAM with substrate removed is an excellent candidate to be used as an optical shutter for HD 3D imaging application.

• 한국자기학회지
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• 제27권2호
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• pp.41-48
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• 2017

$CrPt_3$ 합금은 큰 Kerr 효과를 보여 주는 강한 자기결정 이방성을 가지고 있고 흥미롭게도 훈트 제3법칙을 따르지 않는 것으로 알려져 있다. 본 연구에서는 $CrPt_3$ 합금 박막의 두께의 따른 자성과 자기결정 이방성의 변화를 제일원리계산 방법을 이용하여 연구하였다. 기준 자료로 활용하기 위해 덩치 $CrPt_3$의 다양한 자성 상태, 즉 강자성(FM), A-, C-, G-type 반강자성(A-, C-, G-AF)에 대한 계산을 우선 수행하였는데 덩치 $CrPt_3$은 FM 상태가 안정하였고 이는 실험과 일치하였다. A-, C-, G-AF 상태가 FM 상태일 때 보다 총에너지가 각각 0.517, 0.591, 0.183 eV 만큼 높았고 Cr의 자기모멘트는 FM, A-, C-, G-AF 일 때 각각 2.782, 2.805, 2.794, $2.869_{{\mu}_B}$으로 확인되었다. $CrPt_3$(001) 박막의 표면은 CrPt 표면과 Pt 표면으로 두 종류의 원소 구성을 가질 수 있다. 각각의 표면에 대해 3층에서 9층까지 두께를 변화시켜 가면서 계산을 수행하였다. CrPt 표면의 3층 박막은 덩치와는 다르게 C-AF 상태가 FM 상태에 비해 8 meV 안정하였고 그 보다 두꺼운 5층, 7층, 9층 박막은 덩치처럼 FM 상태가 안정하였다. Pt 표면의 3층 박막은 C-AF 상태가 FM 상태에 비해 37 meV, 5층 박막은 G-AF이 FM 상태에 비해 54 meV 만큼 안정하였고 그 보다 두꺼운 7, 9층 박막은 덩치와 같이 FM 상태가 더 안정하였다.