• Title/Summary/Keyword: Surface doping

검색결과 464건 처리시간 0.024초

Scanning Kelvin Probe Microscopy를 이용한 SiC 소자의 분석 (Scanning Kelvin Probe Microscopy analysis of silicon carbide device structures)

  • 조영득;하재근;고중혁;방욱;김상철;김남균;구상모
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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    • pp.132-132
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    • 2008
  • Silicon carbide (SiC) is an attractive material for high-power, high-temperature, and high-frequency applications. So far, atomic force microscopy (AFM) has been extensively used to study the surface charges, dielectric constants and electrical potential distribution as well as topography in silicon-based device structures, whereas it has rarely been applied to SiC-based structures. In this work, the surface potential and topography distributions SiC with different doping levels were measured at a nanometer-scale resolution using a scanning kelvin probe force microscopy (SKPM) with a non-contact mode AFM. The measured results were calibrated using a Pt-coated tip and a metal defined electrical contacts of Au onto SiC. It is assumed that the atomically resolved surface potential difference does not originate from the intrinsic work function of the materials but reflects the local electron density on the surface. It was found that the work function of the Au deposited on SiC surface was higher than that of original SiC surface. The dependence of the surface potential on the doping levels in SiC, as well as the variation of surface potential with respect to the schottky barrier height has been investigated. The results confirm the concept of the work function and the barrier heights of metal/SiC structures.

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Self-textured Al-doped ZnO transparent conducting oxide for p-i-n a-Si:H thin film solar cell

  • 김도영;이준신;김형준
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2009년도 추계학술발표대회
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    • pp.50.1-50.1
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    • 2009
  • Transparent conductive oxides (TCOs) play an important role in thin-film solar cells in terms of low cost and performance improvement. Al-doped ZnO (AZO) is a very promising material for thin-film solar cellfabrication because of the wide availability of its constituent raw materials and its low cost. In this study, AZO films were prepared by low pressurechemical vapor deposition (LPCVD) using trimethylaluminum (TMA), diethylzinc(DEZ), and water vapor. In order to improve the absorbance of light, atypical surface texturing method is wet etching of front electrode using chemical solution. Alternatively, LPCVD can create a rough surface during deposition. This "self-texturing" is a very useful technique, which can eliminate additional chemical texturing process. The introduction of a TMA doping source has a strong influence on resistivity and the diffusion of light in a wide wavelength range.The haze factor of AZO up to a value of 43 % at 600 nm was achieved without an additional surface texturing process by simple TMA doping. The use of AZO TCO resulted in energy conversion efficiencies of 7.7 % when it was applied to thep-i-n a-Si:H thin film solar cell, which was comparable to commercially available fluorine doped tin oxide ($SnO_2$:F).

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ZnO:Al 과 ITO 투명전도막을 이용한 플랙시블 타입 DSCs변환효율 특성 (Some properties on Conversion Efficiency of Flexible Film-Typed DSCs with ZnO:AI / ITO TCO layers)

  • 김지훈;곽동주;성열문;김태우
    • 한국조명전기설비학회:학술대회논문집
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    • 한국조명전기설비학회 2009년도 추계학술대회 논문집
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    • pp.177-179
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    • 2009
  • In order to investigate the possible application of ZnO films as a transparent conducting oxide (TCO) electrode, ZnO:Al films were prepared by RF magnetron sputtering method. The effects of surface treatment and doping concentration on the structural and electrical properties of ZnO films were mainly studied experimentally. Five-inch PDP cells using either a ZnO:Al or indium tin oxide (ITO) electrode were also fabricated separately under the same manufacturing conditions. The luminous properties of both the transparent conducting oxide electrode were measured and compared with each other. By doping the ZnO target with 2 wt% of Al2O3, the film deposited at a chemical surface treatment resulted in the minimum resistivity of 8.5 _ 10_4 U-cm and a transmittance of 91.7%. And DBD surface treatment resulted in the minimum resistivity of 8.5 _ 10_4 U-cm and a transmittance of 91.7%. Although the luminance and luminous efficiency of the transparent conducting oxide electrode using ZnO:AI are lower than those of the cell with the ITO electrode by about 10%, these values are sufficient enough to be considered for the normal operation of TCO.

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Influence of Nitrogen moieties on CO2 capture of Carbon Aerogel

  • Jeon, Da-Hee;Min, Byung-Gak;Oh, Jong Gab;Nah, Changwoon;Park, Soo-Jin
    • Carbon letters
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    • 제16권1호
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    • pp.57-61
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    • 2015
  • Carbon aerogel is a porous carbon material possessing high porosity and high specific surface area. Nitrogen doping reduced the specific surface area and micropores, but it furnished basic sites to improve the $CO_2$ selectivity. In this work, N-doped carbon aerogels were prepared with different ratios of resorcinol/melamine by using the sol-gel method. The morphological properties were characterized by scanning electron microscopy (SEM). Nitrogen content was studied by X-ray photoelectron spectroscopy (XPS) and the specific surface area and micropore volume were analyzed by $N_2$ adsorption-desorption isotherms at 77 K. The $CO_2$ adsorption capacity was investigated by $CO_2$ adsorption-desorption isotherms at 298 K and 1 bar. Melamine containing N-doped CAs showed a high nitrogen content (5.54 wt.%). The prepared N-doped CAs exhibited a high $CO_2$ capture capacity of 118.77 mg/g (at resorcinol/melamine = 1:0.3). Therefore, we confirmed that the $CO_2$ adsorption capacity was strongly affected by the nitrogen moieties.

Review on Functionalization of Laser-Induced Graphene

  • Jin Woo An;Hee Jae Kim;Seoung-Ki Lee
    • 한국전기전자재료학회논문지
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    • 제36권3호
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    • pp.203-213
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    • 2023
  • Owing to carbon materials' diverse functionalization and versatility, the design and synthesis of carbon-based three-dimensional porous structures have become important foundational research topics across various fields. Among the various methods for producing porous carbon structures, laser-induced graphene (LIG) has garnered attention because of its large surface area, controllable structure, excellent electrical conductivity, scalability, and eco-friendly synthesis process. In addition, recent research results have reported more novel functionalities by advancing further from the unique characteristics of LIG through functionalization or compounding of LIG, making it an attractive material for various applications in electronic devices, sensing, catalysis, and energy storage. This review aims to update the research trends in LIG and its functionalization, providing insights to inspire more interesting studies on functional LIG to expand its potential applications ultimately. Starting with the synthesis method and material characteristics of LIG, we introduce the functionalization of LIG, which is classified into surface modification, heteroatom doping, and hybridization based on the interaction mechanism. Finally, we summarize and discuss the prospects of LIG and its functionalization.

산화아연-탄소나노튜브 복합체의 일산화질소 가스 감지 특성에 미치는 코발트 첨가 효과 (Effects of Co Doping on NO Gas Sensing Characteristics of ZnO-Carbon Nanotube Composites)

  • 정훈철;안은성;웬래훙;오동훈;김효진;김도진
    • 한국재료학회지
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    • 제19권11호
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    • pp.607-612
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    • 2009
  • We investigated the effects of Co doping on the NO gas sensing characteristics of ZnO-carbon nanotube (ZnO-CNT) layered composites fabricated by coaxial coating of single-walled CNTs with ZnO using pulsed laser deposition. Structural examinations clearly confirmed a distinct nanostructure of the CNTs coated with ZnO nanoparticles of an average diameter as small as 10 nm and showed little influence of doping 1 at.% Co into ZnO on the morphology of the ZnO-CNT composites. It was found from the gas sensing measurements that 1 at.% Co doping into ZnO gave rise to a significant improvement in the response of the ZnO-CNT composite sensor to NO gas exposure. In particular, the Co-doped ZnO-CNT composite sensor shows a highly sensitive and fast response to NO gas at relatively low temperatures and even at low NO concentrations. The observed significant improvement of the NO gas sensing properties is attributed to an increase in the specific surface area and the role as a catalyst of the doped Co elements. These results suggest that Co-doped ZnOCNT composites are suitable for use as practical high-performance NO gas sensors.

이온 질량 주입이 금속 유도 측면 결정화에 미치는 영향 (Effect of Ion Mass Doping on Metal-Induced Lateral Crystallization)

  • 김태경;김기범;윤여건;김창훈;이병일;주승기
    • 대한전자공학회논문지SD
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    • 제37권4호
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    • pp.25-30
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    • 2000
  • 금속 유도 측면 결정화에 의한 다결정 실리콘 박막 트랜지스터의 제작에서 이온 질량 주입이 MILC 속도 및 거동에 미치는 영향을 분석하였다. 비정질 실리콘에 도펀트를 주입하거나 이온충돌을 가하면 MILC의 속도가 50% 이상 감소하고 MILC선단이 불균일 해졌다. IMD에 따른 비정질 실리콘 박막의 성질 변화를 분석하기 위하여 자외선 반사도 및 표면 거칠기를 관찰하였고, 이온 충돌에 의한 표면 거칠기의 증가가 MILC 속도 감소와 균일도에 영향을 주는 것으로 나타났다.

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아나타세 TiO2 도핑파워가 다성분계 TiO2-ITO 투명 전극의 전기적, 광학적, 구조적 특성에 미치는 효과 (Effect of Anatase TiO2 Doping Power on Electrical, Optical and Structural Properties of Multicomponent TiO2-Doped ITO Electrodes)

  • 임종욱;최윤영;조충기;최광혁;김한기
    • 한국재료학회지
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    • 제21권7호
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    • pp.371-376
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    • 2011
  • We report on the effects of $TiO_2$ doping power on the characteristics of multicomponent $TiO_2$-ITO (TITO) electrodes prepared by a multi-target sputtering system with tilted cathode guns. Both as-deposited and annealed TITO electrodes showed linearly increased sheet resistance and resistivity with increasing $TiO_2$ doping power. However, the TITO electrodes exhibited a fairly high optical transmittance regardless of the $TiO_2$ doping power due to the high transparency of the $TiO_2$. Although the annealed TITO showed much lower sheet resistance and resistivity relative to the as-deposited samples, the electrical properties of the annealed samples exhibited similar dependence on the $TiO_2$ power to the as-deposited samples. In addition, it was found that doping of an anatase $TiO_2$ in the ITO electrode prevented the preferred (222) orientation of the TITO electrodes. Although the TITO electrode showed higher sheet resistance and resistivity than that of the pure ITO electrode, it offers a very smooth surface and usage of a low-cost Ti element. It is thus considered a promising multicomponent transparent conducting electrode for cost-efficient flat panel displays and photovoltatics.

상 변화 메모리 재료 내의 Ga 주입에 미치는 GaGe 스퍼터링 전력의 영향 (Effect of GaGe Sputtering Power on Ga Doping in Phase Change Memory Materials)

  • 정순원;이승윤
    • 한국전기전자재료학회논문지
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    • 제28권5호
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    • pp.285-290
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    • 2015
  • The phase change memory material is an active element in phase change memory and exhibits reversible phase transition behavior by thermal energy input. The doping of the phase change memory material with Ga leads to the increase of its crystallization temperature and the improvement of its amorphous stability. In this study, we investigated the effect of GaGe sputtering power on the formation of the phase change memory material including Ga. The deposition rate linearly increased to a maximum of 127 nm and the surface roughness remained uniform as the GaGe sputtering power increased in the range from 0 to 75 W. The Ga concentration in the thin film material abruptly increased at the critical sputtering power of 60 W. This influence of GaGe sputtering power was confirmed to result from a combined sputtering-evaporation process of Ga occurring due to the low melting point of Ga ($29.77^{\circ}C$).

Work function engineering on transparent conducting ZnO thin films

  • Heo, Gi-Seok;Hong, Sang-Jin;Park, Jong-Woon;Choi, Bum-Ho;Lee, Jong-Ho;Shin, Dong-Chan
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
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    • pp.1706-1707
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    • 2007
  • A possibility of work function engineering on ZnO thin film is studied by in-situ and ex-situ doping process. The work function of ZnO thin film decreases with increasing boron and phosphorus doping quantity. But, the work function of Al-doped ZnO (AZO) thin film increases as the boron doping quantity incresess. The range of work function change on ZnO thin films is 3.5 eV to 5.5 eV. This result shows that the work function of ZnO thin film is indeed engineerable by changing materials of dopants and their compositional distribution of surface. We also discuss the possible mechanism of work function engineering on ZnO thin films.

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